1N4148WS FEATURES SOD-323 + + - MARKING: T6, T4 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Symbol Limits Unit Non-Repetitive Peak reverse voltage VRM 100 V Peak Repetitive Peak reverse voltage VRRM Working Peak Reverse Voltage VRWM DC Blocking 100 V VR Voltage VR(RMS) 71 V Forward Continuous Current IFM 300 mA Average Rectified Output Current IO 150 mA RMS Reverse Voltage Peak forward surge current @=1.0μs 2.0 IFSM @=1.0s A 1.0 Pd 200 mW RθJA 625 ℃/W Junction temperature Tj 125 ℃ Storage temperature TSTG -65~+150 ℃ Power Dissipation Thermal Resistance Junction to Ambient Electrical Ratings @TA=25℃ Parameter Max. Unit VF1 0.715 V IF=1mA VF2 0.855 V IF=10mA VF3 1.0 V IF=50mA VF4 1.25 V IF=150mA IR1 1 μA VR=75V IR2 25 nA VR=20V Capacitance between terminals CT 2 pF VR=0V,f=1MHz Reverse Recovery Time trr 4 ns Forward voltage Reverse current Symbol Min. Typ. Conditions IF=IR=10mA Irr=0.1XIR,RL=100Ω １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ 1N4148WS Forward Characteristics Reverse 1000 200 Characteristics 100 (nA) (mA) Ta=100℃ REVERSE CURRENT IR T= a 2 5℃ FORWARD CURRENT IF T= a 1 00 ℃ 10 1 0.1 0.01 0.0 Ta=25℃ 10 1 0.2 0.4 0.6 FORWARD VOLTAGE 0.8 VF 1.0 1.2 0 20 (V) 40 REVERSE VOLTAGE Capacitance Characteristics 1.2 100 60 VR 80 (V) Power Derating Curve 300 Ta=25℃ f=1MHz (mW) PD POWER DISSIPATION CAPACITANCE BETWEEN TERMINALS CT (pF) 250 1.0 200 150 100 50 0.8 0 0 5 10 REVERSE VOLTAGE 15 VR 20 (V) 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 (℃ ) ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ 150