VISHAY SI7703EDN

Si7703EDN
Vishay Siliconix
Single P-Channel 20-V (D-S) MOSFET With Schottky Diode
FEATURES
PRODUCT SUMMARY
VDS (V)
- 20
RDS(on) (Ω)
ID (A)
0.048 at VGS = - 4.5 V
- 6.3
0.068 at VGS = - 2.5 V
- 5.3
0.090 at VGS = - 1.8 V
- 4.6
SCHOTTKY PRODUCT SUMMARY
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET® Power MOSFETS: 1.8 V Rated
• ESD Protected: 4500 V
• Ultra-Low Thermal Resistance, PowerPAK®
Package with Low 1.07 mm Profile
APPLICATIONS
VKA (V)
Vf (V)
Diode Forward Voltage
IF (A)
20
0.48 V at 0.5 A
1.0
• Charger Switching
PowerPAK 1212-8
A
3.30 mm
S
K
D
A
3.30 mm
1
A
2
S
3
G
4
K
8
K
7
G
D
6
3 kΩ
D
5
Bottom View
Ordering Information: Si7703EDN-T1-E3 (Lead (Pb)-free)
Si7703EDN-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage (MOSFET and Schottky)
Reverse Voltage (Schottky)
Gate-Source Voltage (MOSFET)
Continuous Drain Current (TJ = 150 °C) (MOSFET)a
Symbol
VDS
VKA
VGS
TA = 25 °C
TA = 85 °C
Pulsed Drain Current (MOSFET)
Continuous Source Current (MOSFET Diode Conduction)a
Average Foward Current (Schottky)
Pulsed Foward Current (Schottky)
TA = 25 °C
Maximum Power Dissipation (MOSFET)a
TA = 85 °C
TA = 25 °C
Maximum Power Dissipation (Schottky)a
TA = 85 °C
Operating Junction and Storage Temperature Range
ID
IDM
IS
IF
IFM
PD
TJ, Tstg
10 s
Steady State
- 20
20
± 12
- 6.3
- 4.5
Unit
V
± 12
- 4.3
- 3.1
- 20
- 2.3
- 1.1
A
1.0
7
2.8
1.5
2.0
1.0
1.3
0.7
1.1
0.6
W
- 55 to 150
260
°C
Soldering Recommendations
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
b,c
Document Number: 71429
S-83043-Rev. C, 22-Dec-08
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Si7703EDN
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
t ≤ 10 s
Junction-to-Ambienta
Steady State
Junction-to-Case (Drain)
Steady State
Device
MOSFET
Schottky
MOSFET
Schottky
MOSFET
Schottky
Symbol
RthJA
RthJC
Typical
35
51
75
91
4
10
Maximum
44
64
94
115
5
12
Unit
°C/W
Notes
a. Surface Mounted on 1" x 1" FR4 board.
MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VGS(th)
VDS = VGS, ID = - 800 µA
- 0.45
Typ.
Max.
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltage
a
- 1.0
V
VDS = 0 V, VGS = ± 4.5 V
± 1.5
µA
VDS = 0 V, VGS = ± 12 V
± 100
mA
VDS = - 20 V, VGS = 0 V
-1
VDS = - 20 V, VGS = 0 V, TJ = 85 °C
-5
VDS ≤ - 5 V, VGS = - 4.5 V
- 20
µA
A
VGS = - 4.5 V, ID = - 6.3 A
0.041
0.048
RDS(on)
VGS = - 2.5 V, ID = - 5.3 A
0.057
0.068
VGS = - 1.8 V, ID = - 1 A
0.072
0.090
gfs
VDS = - 10 V, ID = - 6.3 A
14
VSD
IS = - 2.3 A, VGS = 0 V
- 0.8
- 1.2
12
18
VDS = - 10 V, VGS = - 4.5 V, ID = - 6.3 A
2.5
Ω
S
V
b
Dynamic
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
Rise Time
Turn-Off DelayTime
Fall Time
tr
td(off)
nC
2.9
VDD = - 10 V, RL = 10 Ω
ID ≅ - 1 A, VGEN = - 4.5 V, RG = 6 Ω
tf
2.5
4
4
6
15
23
12
18
νs
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
SCHOTTKY SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Forward Voltage Drop
Maximum Reverse Leakage Current
Junction Capacitance
Symbol
VF
Irm
CT
Test Conditions
Typ.
Max.
IF = 0.5 A
Min.
0.42
0.48
IF = 0.5 A, TJ = 125 °C
0.33
0.4
Vr = 20 V
0.002
0.100
Vr = 20 V, TJ = 85 °C
0.10
1
Vr = 20 V, TJ = 125 °C
1.5
10
Vr = 10 V
31
Unit
V
mA
pF
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 71429
S-83043-Rev. C, 22-Dec-08
Si7703EDN
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS
TA = 25 °C, unless otherwise noted
8
10000
6
I GSS - Gate Current (µA)
I GSS - Gate Current (mA)
1000
4
2
100
TJ = 150 °C
10
1
0.1
TJ = 25 °C
0.01
0
0.001
0
4
8
12
16
0
3
VGS - Gate-to-Source Voltage (V)
6
9
12
15
VGS - Gate-to-Source Voltage (V)
Gate-Current vs. Gate-Source Voltage
Gate Current vs. Gate-Source Voltage
20
20
TC = - 55 °C
VGS = 5 thru 2.5 V
25 °C
16
ID - Drain Current (A)
ID - Drain Current (A)
16
2V
12
8
125 °C
12
8
1.5 V
4
4
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
0.0
4.0
0.5
VDS - Drain-to-Source Voltage (V)
1.0
1.5
2.5
3.0
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.15
2000
VGS = 1.8 V
0.12
Ciss
1600
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
2.0
0.09
VGS = 2.5 V
0.06
VGS = 4.5 V
1200
800
0.03
400
0.00
0
0
4
8
12
16
ID - Drain Current (A)
On-Resistance vs. Drain Current
Document Number: 71429
S-83043-Rev. C, 22-Dec-08
20
Coss
Crss
0
4
8
12
16
20
VDS - Drain-to-Source Voltage (V)
Capacitance
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Si7703EDN
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS
TA = 25 °C, unless otherwise noted
1.5
VGS = 4.5 V
ID = 6.3 A
VDS = 10 V
ID = 6.3 A
3
2
1.3
(Normalized)
4
R DS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
5
1.1
0.9
1
0.7
- 50
0
0
2
4
6
8
10
12
14
- 25
0
25
50
75
100
125
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
150
0.14
20
R DS(on) - On-Resistance (Ω)
0.12
IS - Source Current (A)
10
TJ = 150 °C
TJ = 25 °C
0.10
0.08
ID = 6.3 A
0.06
0.04
0.02
0.00
1
0
0.3
0.6
0.9
1.2
1.5
0
1.8
1
3
4
5
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.4
50
ID = 800 µA
0.3
40
0.2
Power (W)
V GS(th) Variance (V)
2
0.1
30
20
0.0
10
- 0.1
- 0.2
- 50
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4
- 25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
1
10
100
TJ - T emperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
600
Document Number: 71429
S-83043-Rev. C, 22-Dec-08
Si7703EDN
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS
TA = 25 °C, unless otherwise noted
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = R thJA = 75 °C/W
3. T JM - TA = PDMZthJA(t )
Single Pulse
0.01
10-4
10-3
4. Surface Mounted
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
Square Wave Pulse Duration (s)
10-1
1
Normalized Thermal Transient Impedance, Junction-to-Case
SCHOTTKY TYPICAL CHARACTERISTICS
TA = 25 °C, unless otherwise noted
5
1
IF - Forward Current (A)
I R - Reverse Current (mA)
20
10
0.1
20 V
0.01
10 V
TJ = 150 °C
1
TJ = 25 °C
0.001
0.0001
0.1
0
25
50
75
100
125
150
0
0.2
0.4
0.6
0.8
TJ - Junction Temperature (°C)
VF - Forward Voltage Drop (V)
Reverse Current vs. Junction Temperature
Forward Voltage Drop
Document Number: 71429
S-83043-Rev. C, 22-Dec-08
1.0
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Si7703EDN
Vishay Siliconix
SCHOTTKY TYPICAL CHARACTERISTICS
TA = 25 °C, unless otherwise noted
CT - Junction Capacitance (pF)
150
120
90
60
30
0
0
4
8
12
VKA - Reverse Voltage (V)
16
20
Capacitance
2
1
Normalized Effective T ransient
Thermal Impedance
Duty Cycle = 0.5
0.1
0.2
Notes:
0.1
PDM
t1
0.05
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = R thJA = 91 °C/W
3. T JM - TA = PDMZthJ A(t)
4. Surface Mounted
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
Square Wave Pulse Duration (s)
10-1
1
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71429.
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Document Number: 71429
S-83043-Rev. C, 22-Dec-08
Package Information
Vishay Siliconix
D4
PowerPAK® 1212-8, (SINGLE/DUAL)
W
H
E2
E4
L
K
M
θ
e
1
Z
D5
D
D2
2
2
D1
8
1
5
4
θ
4
b
3
L1
E3
A1
Backside View of Single Pad
H
2
E1
E
Detail Z
1
D1
2
K1
Notes:
1. Inch will govern
2
D2
Dimensions exclusive of mold gate burrs
3. Dimensions exclusive of mold flash and cutting burrs
L
K
E2
E4
D2 D3(2x) D4
c
A
H
3
4
b
θ
D5
θ
E3
Backside View of Dual Pad
MILLIMETERS
INCHES
DIM.
MIN.
NOM.
MAX.
MIN.
NOM.
A
0.97
1.04
1.12
0.038
0.041
MAX.
0.044
A1
0.00
-
0.05
0.000
-
0.002
b
0.23
0.30
0.41
0.009
0.012
0.016
0.013
c
0.23
0.28
0.33
0.009
0.011
D
3.20
3.30
3.40
0.126
0.130
0.134
D1
2.95
3.05
3.15
0.116
0.120
0.124
D2
1.98
2.11
2.24
0.078
0.083
0.088
D3
0.48
-
0.89
0.019
-
0.035
D4
0.47 TYP.
D5
2.3 TYP.
0.0185 TYP.
0.090 TYP.
E
3.20
3.30
3.40
0.126
0.130
0.134
E1
2.95
3.05
3.15
0.116
0.120
0.124
E2
1.47
1.60
1.73
0.058
0.063
0.068
E3
1.75
1.85
1.98
0.069
0.073
0.078
0.34 TYP.
E4
0.013 TYP.
e
0.65 BSC
0.026 BSC
K
0.86 TYP.
0.034 TYP.
K1
0.35
-
-
0.014
-
-
H
0.30
0.41
0.51
0.012
0.016
0.020
L
0.30
0.43
0.56
0.012
0.017
0.022
L1
0.06
0.13
0.20
0.002
0.005
0.008
θ
0°
-
12°
0°
-
12°
W
0.15
0.25
0.36
0.006
0.010
0.014
M
0.125 TYP.
0.005 TYP.
ECN: S10-0951-Rev. J, 03-May-10
DWG: 5882
Document Number: 71656
Revison: 03-May-10
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AN822
Vishay Siliconix
PowerPAK® 1212 Mounting and Thermal Considerations
Johnson Zhao
MOSFETs for switching applications are now available
with die on resistances around 1 mΩ and with the
capability to handle 85 A. While these die capabilities
represent a major advance over what was available
just a few years ago, it is important for power MOSFET
packaging technology to keep pace. It should be obvious that degradation of a high performance die by the
package is undesirable. PowerPAK is a new package
technology that addresses these issues. The PowerPAK
1212-8 provides ultra-low thermal impedance in a
small package that is ideal for space-constrained
applications. In this application note, the PowerPAK
1212-8’s construction is described. Following this,
mounting information is presented. Finally, thermal
and electrical performance is discussed.
THE PowerPAK PACKAGE
The PowerPAK 1212-8 package (Figure 1) is a derivative of PowerPAK SO-8. It utilizes the same packaging
technology, maximizing the die area. The bottom of the
die attach pad is exposed to provide a direct, low resistance thermal path to the substrate the device is
mounted on. The PowerPAK 1212-8 thus translates
the benefits of the PowerPAK SO-8 into a smaller
package, with the same level of thermal performance.
(Please refer to application note “PowerPAK SO-8
Mounting and Thermal Considerations.”)
The PowerPAK 1212-8 has a footprint area comparable to TSOP-6. It is over 40 % smaller than standard
TSSOP-8. Its die capacity is more than twice the size
of the standard TSOP-6’s. It has thermal performance
an order of magnitude better than the SO-8, and 20
times better than TSSOP-8. Its thermal performance is
better than all current SMT packages in the market. It
will take the advantage of any PC board heat sink
capability. Bringing the junction temperature down also
increases the die efficiency by around 20 % compared
with TSSOP-8. For applications where bigger packages are typically required solely for thermal consideration, the PowerPAK 1212-8 is a good option.
Both the single and dual PowerPAK 1212-8 utilize the
same pin-outs as the single and dual PowerPAK SO-8.
The low 1.05 mm PowerPAK height profile makes both
versions an excellent choice for applications with
space constraints.
PowerPAK 1212 SINGLE MOUNTING
To take the advantage of the single PowerPAK 1212-8’s
thermal performance see Application Note 826,
Recommended Minimum Pad Patterns With Outline
Drawing Access for Vishay Siliconix MOSFETs. Click
on the PowerPAK 1212-8 single in the index of this
document.
In this figure, the drain land pattern is given to make full
contact to the drain pad on the PowerPAK package.
This land pattern can be extended to the left, right, and
top of the drawn pattern. This extension will serve to
increase the heat dissipation by decreasing the thermal resistance from the foot of the PowerPAK to the
PC board and therefore to the ambient. Note that
increasing the drain land area beyond a certain point
will yield little decrease in foot-to-board and foot-toambient thermal resistance. Under specific conditions
of board configuration, copper weight, and layer stack,
experiments have found that adding copper beyond an
area of about 0.3 to 0.5 in2 of will yield little improvement in thermal performance.
Figure 1. PowerPAK 1212 Devices
Document Number 71681
03-Mar-06
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AN822
Vishay Siliconix
PowerPAK 1212 DUAL
To take the advantage of the dual PowerPAK 1212-8’s
thermal performance, the minimum recommended
land pattern can be found in Application Note 826,
Recommended Minimum Pad Patterns With Outline
Drawing Access for Vishay Siliconix MOSFETs. Click
on the PowerPAK 1212-8 dual in the index of this document.
The gap between the two drain pads is 10 mils. This
matches the spacing of the two drain pads on the PowerPAK 1212-8 dual package.
This land pattern can be extended to the left, right, and
top of the drawn pattern. This extension will serve to
increase the heat dissipation by decreasing the thermal resistance from the foot of the PowerPAK to the
PC board and therefore to the ambient. Note that
increasing the drain land area beyond a certain point
will yield little decrease in foot-to-board and foot-toambient thermal resistance. Under specific conditions
of board configuration, copper weight, and layer stack,
experiments have found that adding copper beyond an
area of about 0.3 to 0.5 in2 of will yield little improvement in thermal performance.
ture profile used, and the temperatures and time
duration, are shown in Figures 2 and 3. For the lead
(Pb)-free solder profile, see http://www.vishay.com/
doc?73257.
REFLOW SOLDERING
Vishay Siliconix surface-mount packages meet solder
reflow reliability requirements. Devices are subjected
to solder reflow as a preconditioning test and are then
reliability-tested using temperature cycle, bias humidity, HAST, or pressure pot. The solder reflow tempera-
Ramp-Up Rate
+ 6 °C /Second Maximum
Temperature at 155 ± 15 °C
120 Seconds Maximum
Temperature Above 180 °C
70 - 180 Seconds
Maximum Temperature
240 + 5/- 0 °C
Time at Maximum Temperature
20 - 40 Seconds
Ramp-Down Rate
+ 6 °C/Second Maximum
Figure 2. Solder Reflow Temperature Profile
10 s (max)
210 - 220 °C
3 ° C/s (max)
4 ° C/s (max)
183 °C
140 - 170 °C
50 s (max)
3° C/s (max)
60 s (min)
Pre-Heating Zone
Reflow Zone
Maximum peak temperature at 240 °C is allowed.
Figure 3. Solder Reflow Temperatures and Time Durations
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Document Number 71681
03-Mar-06
AN822
Vishay Siliconix
TABLE 1: EQIVALENT STEADY STATE PERFORMANCE
Package
SO-8
TSSOP-8
TSOP-8
PPAK 1212
PPAK SO-8
Configuration
Single
Dual
Single
Dual
Single
Dual
Single
Dual
Single
Dual
Thermal Resiatance RthJC(C/W)
20
40
52
83
40
90
2.4
5.5
1.8
5.5
PowerPAK 1212
Standard SO-8
49.8 °C
2.4 °C/W
Standard TSSOP-8
85 °C
20 °C/W
TSOP-6
149 °C
52 °C/W
125 °C
40 °C/W
PC Board at 45 °C
Figure 4. Temperature of Devices on a PC Board
THERMAL PERFORMANCE
Introduction
Spreading Copper
A basic measure of a device’s thermal performance is
the junction-to-case thermal resistance, Rθjc, or the
junction to- foot thermal resistance, Rθjf. This parameter
is measured for the device mounted to an infinite heat
sink and is therefore a characterization of the device
only, in other words, independent of the properties of the
object to which the device is mounted. Table 1 shows a
comparison of the PowerPAK 1212-8, PowerPAK SO-8,
standard TSSOP-8 and SO-8 equivalent steady state
performance.
By minimizing the junction-to-foot thermal resistance, the
MOSFET die temperature is very close to the temperature of the PC board. Consider four devices mounted on
a PC board with a board temperature of 45 °C (Figure 4).
Suppose each device is dissipating 2 W. Using the junction-to-foot thermal resistance characteristics of the
PowerPAK 1212-8 and the other SMT packages, die
temperatures are determined to be 49.8 °C for the PowerPAK 1212-8, 85 °C for the standard SO-8, 149 °C for
standard TSSOP-8, and 125 °C for TSOP-6. This is a
4.8 °C rise above the board temperature for the PowerPAK 1212-8, and over 40 °C for other SMT packages. A
4.8 °C rise has minimal effect on rDS(ON) whereas a rise
of over 40 °C will cause an increase in rDS(ON) as high
as 20 %.
Designers add additional copper, spreading copper, to
the drain pad to aid in conducting heat from a device. It
is helpful to have some information about the thermal
performance for a given area of spreading copper.
Figure 5 and Figure 6 show the thermal resistance of a
PowerPAK 1212-8 single and dual devices mounted on
a 2-in. x 2-in., four-layer FR-4 PC boards. The two internal layers and the backside layer are solid copper. The
internal layers were chosen as solid copper to model the
large power and ground planes common in many applications. The top layer was cut back to a smaller area and
at each step junction-to-ambient thermal resistance
measurements were taken. The results indicate that an
area above 0.2 to 0.3 square inches of spreading copper
gives no additional thermal performance improvement.
A subsequent experiment was run where the copper on
the back-side was reduced, first to 50 % in stripes to
mimic circuit traces, and then totally removed. No significant effect was observed.
Document Number 71681
03-Mar-06
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AN822
Vishay Siliconix
130
105
Spreading Copper (sq. in.)
Spreading Copper (sq. in.)
120
95
110
100
RthJ A (°C/W)
RthJA (°C/W)
85
75
65
90
80
50 %
100 %
70
100 %
55
0%
60
50 %
0%
50
45
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
Figure 5. Spreading Copper - Si7401DN
Figure 6. Spreading Copper - Junction-to-Ambient Performance
CONCLUSIONS
As a derivative of the PowerPAK SO-8, the PowerPAK
1212-8 uses the same packaging technology and has
been shown to have the same level of thermal performance while having a footprint that is more than 40 %
smaller than the standard TSSOP-8.
Recommended PowerPAK 1212-8 land patterns are
provided to aid in PC board layout for designs using this
new package.
The PowerPAK 1212-8 combines small size with attractive thermal characteristics. By minimizing the thermal
rise above the board temperature, PowerPAK simplifies
thermal design considerations, allows the device to run
cooler, keeps rDS(ON) low, and permits the device to
handle more current than a same- or larger-size MOSFET die in the standard TSSOP-8 or SO-8 packages.
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4
Document Number 71681
03-Mar-06
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR PowerPAK® 1212-8 Dual
0.152
(3.860)
0.152
(3.860)
0.039
0.039
(0.990)
(0.990)
0.068
0.068
(1.725)
(1.725)
0.010
(0.255)
0.016
(0.405)
0.016
(0.405)
0.094
(2.390)
0.094
(2.390)
0.010
(0.225)
(2.235)
0.088
0.039
(0.990)
0.039
(0.990)
0.026
(0.660)
0.026
(0.660)
0.030
(0.760)
0.025
(0.635)
0.025
0.030
(0.635)
(0.760)
Recommended Minimum PADs for PowerPAK 1212-8 Dual
Dimensions in Inches/(mm)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
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1
Document Number: 72598
Revision: 14-Apr-08
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