Comchip MOSFET SMD Diode Specialist CJ3404-HF (N-Channel ) Reverse Voltage: 30 Volts Forward Current: 5.8 A RoHS Device Halogen Free SOT-23 Features 0.118(3.00) 0.110(2.80) -N-Channel -Enhancement mode field effect transistor. -Use advanced trench technology to provide excellent rds(on) and low gate charge 3 0.055(1.40) 0.047(1.20) -This device is suitable for use as a load switch or in PWM applications. 1 2 0.079(2.00) 0.071(1.80) Mechanical data -Case: SOT-23, molded plastic. 0.007(0.150) 0.002(0.080) 0.041(1.05) 0.035(0.90) 0.100(2.55) 0.089(2.25) -Terminals: solderable per MIL-STD-750, method 2026. 0.020(0.50) 0.012(0.30) Circuit diagram D Dimensions in inches and (millimeter) G S Maximum Ratings and Electrical Characteristics (at Ta=25 °C unless otherwise noted) Symbol Value Units Maximum drain-source voltage VDS 30 V Maximum gate-source voltage VGS ±20 V ID 5.8 A Maximum pulsed drain current* IDM 30 A Maximum power dissipation PD 350 W RΘJA 357 °C/W Junction temperature TJ 150 °C Storage temperature TSTG -55 to +150 °C Parameter Maximum continuous drain current Thermal resistance from Junction to ambient (t<5s) Note: 1. Repetitive rating: Pulse width limited by maximum junction temperature. REV: A Page 1 QW-JTR05 Comchip Technology CO., LTD. Comchip MOSFET SMD Diode Specialist RATING AND CHARACTERISTIC CURVES (CJ3404-HF) Fig.2 - Transfer Characteristics Fig.1 - Output Characteristics 3.0 22 Ta=25°C Ta=25°C VGS=4.5V 20 VGS=4.0V 6V 2.5 Drain Current,ID (A) Dran Current,ID (A) 10V 15 VGS=3.5V 10 2.0 1.5 1.0 VGS=3.0V 5 0.5 0 0 1 3 2 0.0 1.3 1.5 5 4 2.0 Drain to Soruce Voltage, VDS (A) 2.5 3.5 3.0 4.0 Gate to Source Voltage,VGS (V) Fig.4- RDS(ON) — VGS Fig.3 - RDS(ON) — ID 60 70 50 ON-Resistance, RDS(ON) ( mΩ ) ON-Resistance, RDS(ON) ( mΩ ) Ta=25°C VGS=4.5V 40 30 VGS=10V 20 10 60 50 40 ID=3.6A ID=2.8A 30 Ta=25°C 0 0 2 4 6 8 10 20 3 Drain Current,ID (A) 4 5 6 7 8 9 10 Gate to Source Voltage,VGS (V) Fig.5 - IS — VSD 10 Source Current, Is ( A ) 1 0.1 0.01 1E-3 1E-4 1E-5 0.0 0.2 0.4 0.6 0.8 1.0 1.2 Source to Drain Voltage,VSD (V) REV: A Page 2 QW-JTR05 Comchip Technology CO., LTD. Comchip MOSFET SMD Diode Specialist Reel Taping Specification P1 B F E d P0 SOT-23 SOT-23 SYMBOL A B C d D D1 D2 (mm) 3.15 ± 0.10 2.77 ± 0.10 1.22 ± 0.10 1.50 + 0.10 178 ± 2.0 54.40 ± 1.0 13.00 ± 1.0 (inch) 0.124 ± 0.004 0.109 ± 0.004 0.048 ± 0.004 0.059 + 0.004 7.008 ± 0.079 2.142 ± 0.039 0.512 ± 0.039 SYMBOL E F P P0 P1 W W1 (mm) 1.75 ± 0.10 3.50 ± 0.05 4.00 ± 0.10 4.00 ± 0.10 2.00 ± 0.10 8.00 + 0.30 /–0.10 9.50 ± 1.00 (inch) 0.069 ± 0.004 0.138 ± 0.002 0.158 ± 0.004 0.158 ± 0.004 0.079 ± 0.004 0.315 + 0.012 /–0.004 0.374 ± 0.039 REV: A Page 3 QW-JTR05 Comchip Technology CO., LTD. Comchip MOSFET SMD Diode Specialist Marking Code 3 Part Number Marking Code CJ3404-HF R4 XX 1 2 xxx = Product type marking code Suggested PAD Layout SOT-23 SIZE (mm) (inch) A 0.80 0.031 B 1.90 0.075 C 2.02 0.080 D 2.82 0.111 A C D B Standard Packaging Case Type SOT-23 Qty Per Reel Reel Size (Pcs) (inch) 3,000 7 REV: A Page 4 QW-JTR05 Comchip Technology CO., LTD.