MOSFET SMD Diodes Specialist 2N7002-G (N-Channel) RoHS Device Features SOT-23 Power dissipation : 0.35W 0.119(3.00) 0.110(2.80) Equivalent Circuit D 0.056(1.40) 0.047(1.20) D G G 0.006(0.15) 0.002(0.05) 0.044(1.10) 0.035(0.90) S 0.103(2.60) 0.086(2.20) Maximum Ratings (at TA=25°C) Parameter S 0.083(2.10) 0.066(1.70) G : Gate S : Source D : Drain Symbol Value Unit VDS 60 V 0.020(0.50) 0.013(0.35) 0.006(0.15)max 0.007(0.20)min Drain-Source voltage Drain current ID 250 mA Power dissipation PD 350 mW TJ, TSTG -55 ~ +150 °C Junction and storage temperature Dimensions in inches and (millimeter) Electrical Characteristics (at TA=25°C unless otherwise noted) Parameter Conditions Drain-Source breakdown voltage VGS=0V, ID=10μA Gate-Threshold voltage VDS=VGS, ID=250μA Gate-body leakage VDS=0V, VGS=15V Symbol Min Typ V(BR)DSS 60 70 Vth(GS) 1 1.5 Max Unit V IGSS 10 VDS=60V, VGS=0V Zero gate voltage drain current 2.5 1 IDSS μA 500 VDS=60V, VGS=0V, TJ=125°C VGS=10V, VDS=7.5V On-state drain current 800 1300 500 700 ID(ON) VGS=4.5V, VDS=10V VGS=10V, ID=250mA Drain-Source on resistance mA 1.5 3 2.0 4 rDS(ON) VGS=4.5V, ID=200mA VDS=15V, ID=200mA gts 300 Diode forward voltage IS=200mA, VGS=0V VSD 0.85 1.2 Qg 0.6 1.0 Qgs 0.06 Gate-Drain charge Qgd 0.06 Input capacitance Ciss 25 COSS 6 CrSS 1.2 td(ON) 7.5 tr 6 td(off) 7.5 Gate-Source charge Output capacitance VDS=30V, VGS=10V, ID=250mA VDS=25V, VGS=0V, f=1MHz Reverse transfer capacitance Turn-on time Turn-off time VDD=30V, RL=200Ω ID=100mA, VGEN=10V RG=10Ω Ω mS Forward tran conductance Total gate charge nA V nC pF 20 nS 20 REV:B Page 1 QW-BTR12 Comchip Technology CO., LTD. MOSFET SMD Diodes Specialist RATING AND CHARACTERISTIC CURVES (2N7002-G) Fig.2 On-Resistance vs Drain Current Fig.1 On-Region Characteristics 7 VGS=10V 9.0V 8.0V 7.0V 6.5V 6.0V 4.5V 4.0V 3.5V 3.0V 2.5V 2.0/1.0V 0.8 0.6 TJ= 25CO RDS(ON), Normalized Drain-Source On-Resistance ID, Drain-Source Current (A) 1.0 5.5V 5.0V 0.4 0.2 0 6 VGS = 5.0V 5 4 3 VGS = 10V 2 1 0 0 1 2 5 4 3 0 0.2 VDS, Drain-Source Voltage(V) Fig.3 On-Resistance vs Junction Temperature 0.8 1.0 6 RDS(ON), Normalized Drain-Source On-Resistance RDS(ON), Normalized Drain-Source On-Resistance 0.6 Fig.4 On-Resistance vs Gate-Source Voltage 2.0 1.5 VGS=10V, ID=0.5A VGS=5V, ID=0.05A 1.0 0.5 0 -55 0.4 ID, Drain Current (A) 5 4 ID = 500mA 3 ID = 50mA 2 1 0 -30 -5 20 45 70 TJ, Junction Temperature ( 95 120 O 145 0 2 C) 4 6 8 10 12 14 16 18 VGS, Gate to Source Voltage (V) REV:B Page 2 QW-BTR12 Comchip Technology CO., LTD. MOSFET SMD Diodes Specialist Reel Taping Specification d P0 P1 T E Index hole F W B P C A 12 o 0 D2 D1 D W1 Trailer Device ....... ....... End ....... ....... Leader ....... ....... ....... ....... 10 pitches (min) Start 10 pitches (min) Direction of Feed SOT-23 SOT-23 SYMBOL A B C d D D1 D2 (mm) 3.10 ± 0.10 2.85 ± 0.10 1.40 ± 0.10 1.55 ± 0.10 178 ± 1 50.0 MIN. 13.0 ± 0.20 (inch) 0.122 ± 0.004 0.112 ± 0.004 0.055 ± 0.004 0.061 ± 0.004 7.008 ± 0.04 1.969 MIN. 0.512 ± 0.008 SYMBOL E F P P0 P1 W W1 (mm) 1.75 ± 0.10 3.50 ± 0.05 4.00 ± 0.10 4.00 ± 0.10 2.00 ± 0.05 8.00 ± 0.30 14.4 MAX. (inch) 0.069 ± 0.004 0.138 ± 0.002 0.157 ± 0.004 0.157 ± 0.004 0.079 ± 0.002 0.315 ± 0.012 0.567 MAX. REV:B Page 3 QW-BTR12 Comchip Technology CO., LTD. MOSFET SMD Diodes Specialist Marking Code 3 Part Number Marking Code 2N7002-G 7002 7002 1 2 Suggested PAD Layout SOT-23 SIZE (mm) (inch) A 0.80 0.031 B 1.90 0.075 C 2.02 0.080 D 2.82 0.111 A C D B Standard Package Qty per Reel Reel Size (Pcs) (inch) 3000 7 Case Type SOT-23 REV:B Page 4 QW-BTR12 Comchip Technology CO., LTD.