Power Transistors 2SC3063 Silicon NPN triple diffusion planar type Unit: mm For TV video output amplification 8.0+0.5 –0.1 3.2±0.2 3.05±0.1 3.8±0.3 1.9±0.1 • High collector to emitter voltage VCEO • Small collector output capacitance Cob • TO-126B package which requires no insulation plate for installation to the heat sink 16.0±1.0 ■ Features 11.0±0.5 φ 3.16±0.1 ■ Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector to base voltage VCBO 300 V Collector to emitter voltage VCEO 300 V Emitter to base voltage VEBO 7 V Peak collector current ICP 200 mA Collector current IC 100 mA Collector power dissipation PC 1.2 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 0.75±0.1 0.5±0.1 0.5±0.1 4.6±0.2 1 2 1.76±0.1 2.3±0.2 1 : Emitter 2 : Collector 3 : Base TO-126B-A1 Package 3 ■ Electrical Characteristics TC = 25°C Parameter Symbol Conditions Min Typ Max Unit VCBO IC = 10 µA, IE = 0 300 V Collector to emitter voltage VCEO IC = 0.1 mA, IB = 0 300 V Emitter to base voltage VEBO IE = 10 µA, IC = 0 7 V 50 Collector to base voltage Forward current transfer ratio hFE VCE = 50 V, IC = 5 mA Base to emitter voltage VBE VCE = 10 V, IC = 30 mA VCE(sat) IC = 30 mA, IB = 3 mA Collector to emitter saturation voltage Transition frequency Collector output capacitance fT Cob VCB = 30 V, IE = −20 mA, f = 200 MHz VCB = 30 V, IE = 0, f = 1 MHz 250 1.2 1.5 70 V V 140 MHz 2.4 pF 193 2SC3063 Power Transistors PC T a IC VCE 240 TC=25˚C 1.2 0.8 0.4 VCE=10V IB=2.0mA 1.6mA 100 1.2mA 80 1.0mA 0.8mA 0.6mA 60 0.4mA 40 0.2mA 20 20 40 60 80 100 120 140 160 10 20 30 40 50 120 80 60 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) VCE(sat) IC hFE IC 0 0.4 0.8 1.2 VCB=30V f=200MHz TC=25˚C VCE=50V 220 TC=100˚C 25˚C –25˚C 0.03 Transition frequency fT (MHz) Forward current transfer ratio hFE 0.3 25˚C 300 2.0 fT I E 240 1 1.6 Base to emitter voltage VBE (V) 1000 0.1 160 0 0 IC/IB=10 3 –25˚C TC=100˚C 40 0 0 25˚C 200 Collector current IC (mA) Collector current IC (mA) Collector power dissipation PC (W) Without heat sink 0 Collector to emitter saturation voltage VCE(sat) (V) IC VBE 120 1.6 TC=100˚C 100 –25˚C 30 10 3 200 180 160 140 120 100 80 60 40 20 0.01 1 1 3 10 30 100 1 3 Collector current IC (mA) Cob VCB 100 300 IE=0 f=1MHz TC=25˚C 8 6 4 Single pulse TC=25˚C 300 ICP t=2ms 100 IC t=1s 30 10 3 1 2 0.3 0 0.1 1 3 10 30 100 300 1000 Collector to base voltage VCB (V) 1 3 10 30 100 300 0 –1 –3 –10 –30 Emitter current IE (mA) Area of safe operation (ASO) 1000 Collector current IC (A) Collector output capacitance Cob (pF) 30 Collector current IC (mA) 10 194 10 1000 Collector to emitter voltage VCE (V) –100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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