Power Transistors 2SD1772, 2SD1772A Silicon NPN triple diffusion planar type For power amplification For TV vertical deflection output Complementary to 2SB1192 and 2SB1192A Unit: mm Parameter Symbol Collector to 2SD1772 base voltage 2SD1772A Collector to 2SD1772 Ratings 200 VCBO 200 150 VCEO emitter voltage 2SD1772A 180 Unit V Peak collector current ICP 2 A Collector current IC 1 A 25 PC Junction temperature Tj Storage temperature Tstg ■ Electrical Characteristics Parameter 4.2±0.2 7.5±0.2 0.8±0.1 1.3±0.2 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 6 Ta=25°C 1.4±0.1 1 V VEBO dissipation φ3.1±0.1 V Emitter to base voltage Collector power TC=25°C 16.7±0.3 0.7±0.1 (TC=25˚C) 2.7±0.2 4.0 ■ Absolute Maximum Ratings 14.0±0.5 ● Large collector power dissipation PC Full-pack package which can be installed to the heat sink with one screw 4.2±0.2 5.5±0.2 Solder Dip ■ Features ● 10.0±0.2 2 3 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) W 2 150 ˚C –55 to +150 ˚C (TC=25˚C) Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = 200V, IE = 0 50 µA Emitter cutoff current IEBO VEB = 4V, IC = 0 50 µA VCEO IC = 5mA, IB = 0 VEBO IE = 0.5mA, IC = 0 6 hFE1* VCE = 10V, IC = 100mA 60 50 Collector to emitter 2SD1772 voltage 2SD1772A Emitter to base voltage Forward current transfer ratio 150 V 180 V 240 hFE2 VCE = 10V, IC = 300mA Base to emitter voltage VBE VCE = 10V, IC = 300mA Collector to emitter saturation voltage VCE(sat) IC = 500mA, IB = 50mA Transition frequency fT VCE = 10V, IC = 100mA, f = 1MHz 20 MHz Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz 27 pF *h FE1 1 1 V V Rank classification Rank Q P hFE1 60 to 140 100 to 240 1 Power Transistors 2SD1772, 2SD1772A PC — Ta IC — VCE IB=20mA (1) 25 20 15 (2) 10 1.2 1.0 10mA 8mA 0.8 6mA 0.6 4mA 0.4 5 0.2 25˚C TC=100˚C 2 –25˚C 1 1mA (3) 0 20 40 60 80 100 120 140 160 0 0 Ambient temperature Ta (˚C) 4 8 12 16 20 24 0 Collector to emitter voltage VCE (V) VCE(sat) — IC 0.4 0.8 1.2 1.6 Base to emitter voltage VBE (V) hFE — IC fT — IC 1000 TC=100˚C 1 25˚C 0.3 –25˚C 0.1 0.03 0.01 0.01 0.03 0.1 0.3 1 TC=100˚C 300 25˚C 100 –25˚C 30 10 3 0.03 0.1 0.3 1 Area of safe operation (ASO) t=0.5ms 1ms 0.3 10ms DC 0.1 0.03 0.003 0.001 1 3 10 30 100 2SD1772A 2SD1772 0.01 300 Collector to emitter voltage VCE 1000 (V) Thermal resistance Rth(t) (˚C/W) Non repetitive pulse TC=25˚C IC 30 10 3 1 0.1 0.01 0.03 3 0.1 0.3 1 3 Collector current IC (A) Rth(t) — t 102 1 100 Collector current IC (A) 10 3 ICP 300 0.3 1 0.01 3 Transition frequency fT (MHz) 3 VCE=10V f=1MHz TC=25˚C VCE=10V 1000 Forward current transfer ratio hFE IC/IB=10 10 Collector current IC (A) Collector current IC (A) 3 2mA 0 2 VCE=10V 1.4 Collector current IC (A) 30 4 TC=25˚C (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink (PC=2W) 35 0 Collector to emitter saturation voltage VCE(sat) (V) IC — VBE 1.6 Collector current IC (A) Collector power dissipation PC (W) 40 (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink (1) (2) 10 1 10–1 10–2 10–4 10–3 10–2 10–1 1 Time t (s) 10 102 103 104 10 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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