ZXMS6003G 60V N-channel self protected enhancement mode IntelliFETTM MOSFET with programmable current limit Summary Continuous drain source voltage VDS = 60V On-state resistance 500m⍀ Nominal load current (VIN = 5V) 1.4A Clamping energy 550mJ Description Self protected low side MOSFET. Monolithic over temperature, over current, over voltage (active clamp) and ESD protected logic level functionality. Intended as a general purpose switch, with status indication and programmable current limit. S Status D Rprog IN Top view Note: Rprog must be connected between the Status and IN pins Features • Over-current protection • Input Protection (ESD) • Load dump protection (actively protects load) Over voltage protection (active clamp) • Logic Level Input Thermal shutdown with auto restart • High continuous current rating • Current limit programmable via external resistor • Status pin (analog status indication) • Short circuit protection with auto restart • • Ordering information Device Part mark Reel size (inches) Tape width (mm) Quantity per reel ZXMS6003GTA ZXMS6003 7 12 1,000 Issue 2 - March 2007 © Zetex Semiconductors plc 2007 1 www.zetex.com ZXMS6003G Functional block diagram Status / current limit D Over voltage protection IN Human body ESD protection Over current protection Logic Over temperature protection S Applications and information • • • • • • • • Especially suited for loads with a high in-rush current such as lamps and motors. All types of resistive, inductive and capacitive loads in switching applications. C compatible power switch for 12V and 24V DC applications. Automotive rated. Replaces electromechanical relays and discrete circuits. Linear mode capability - the current-limiting protection circuitry is designed to de-activate at low VDS, in order not to compromise the load current during normal operation. The design max. DC operating current is therefore determined by the thermal capability of the package/ board combination, rather than by the protection circuitry. Note: This does not compromise the product's ability to self-protect during short-circuit load conditions. The current limit is programmable via an external resistor Rprog connected between Status and IN pins. Status pin voltage reflects the gate drive being applied internally to the power MOSFET. With VIN = 5V and Rprog = 24k⍀: Status voltage ~ 5V indicates normal operation. Status voltage ~ (2-3)V indicates that the device is in current-limiting mode. Status voltage < 1V indicates that the device is in thermal shutdown. Issue 2 - March 2007 © Zetex Semiconductors plc 2007 2 www.zetex.com ZXMS6003G Issue 2 - March 2007 © Zetex Semiconductors plc 2007 3 www.zetex.com ZXMS6003G Absolute maximum ratings Parameter Symbol Limit Unit VDS 60 V Drain-source voltage for short circuit protection VIN=5V(a) VDS(SC) 36 V Drain-source voltage for short circuit protection VIN=10V(a) VDS(SC) 20 V Continuous input voltage VIN -0.2 ... +10 V Peak input voltage VIN -0.2 ... +20 V Operating temperature range Tj, -40 to +150 °C Storage temperature range Tstg -55 to +150 °C Power dissipation @ Tamb =25°C(a) PD 2.5 W Continuous drain current @ VIN=10V; Tamb=25°C(b) ID 1.6 A Continuous drain current @ VIN=5V; Tamb=25°C(b) ID 1.4 A Continuous source current (body diode)(b) IS 3 A Pulsed source current (body diode)(c) IS 8 A EAS 550 mJ VLoadDump 80 V VESD 4000 V Continuous drain-source voltage Unclamped single pulse inductive energy Load dump protection Electrostatic discharge (human body model) DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 40/150/56 Thermal resistance Parameter Symbol Limit Unit Junction to ambient R⍜JA 50 °C/W Junction to ambient R⍜JA 28 °C/W NOTES: (a) For ID(LIM) < 1.2A (see safe operating area curve). (b) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 board with a high coverage of single sided 2oz weight copper. (c) For a device surface mounted on FR4 board and measured at t<=10s. Issue 2 - March 2007 © Zetex Semiconductors plc 2007 4 www.zetex.com ZXMS6003G Characteristics Issue 2 - March 2007 © Zetex Semiconductors plc 2007 5 www.zetex.com ZXMS6003G Electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Symbol Min Typ Max Unit Conditions Drain-source clamp voltage VDS(AZ) 60 70 75 V Off state drain current IDSS 0.1 3 A VDS=12V, VIN=0V Off state drain current IDSS 3 15 A VDS=32V, VIN=0V Input threshold voltage (*) VIN(th) V VDS=VGS, ID=1mA Input current IIN 0.7 1.2 mA VIN=+5V Input current IIN 1.5 2.7 mA VIN=+7V Input current IIN 4 7 mA VIN=+10V Static drain-source on-state resistance RDS(on) 520 675 m⍀ VIN=5V, ID=0.2A Static drain-source on-state resistance RDS(on) 385 500 m⍀ VIN=10V, ID=0.5A Current limit (†) ID(LIM) 0.2 0.3 0.4 A VIN=5V, Vds=10V Rprog=20k Current limit(†) ID(LIM) 0.7 0.9 1.2 A VIN=10V, Vds=10V, Rprog=20k Static Characteristics 1 2.1 ID=10mA Dynamic characteristics Turn-on time (VIN to 90% ID) ton 3.0 10 s Rprog=20k, RL=22⍀, VIN=0 to 10V, VDD=12V Turn-off time (VIN to 90% ID) toff 13 20 s Rprog=20k, RL=22⍀, VIN=10V to 0V, VDD=12V Slew rate on (70 to 50% VDD) -dVDS/dton 8 20 V/s Rprog=20k, RL=22⍀, VIN=0 to 10V, VDD=12V Slew rate off (50 to 70% VDD) DVDS/dton 3.2 10 V/s Rprog=20k, RL=22⍀, VIN=10V to 0V, VDD=12V NOTES: (*) Protection features may operate outside spec for VIN<4.5V (†) The drain current is limited to a reduced value when Vds exceeds a safe level. Issue 2 - March 2007 © Zetex Semiconductors plc 2007 6 www.zetex.com ZXMS6003G Electrical characteristics (at Tamb = 25°C unless otherwise stated) (cont.) Parameter Symbol Min Typ Max Unit Conditions Protection functions(‡) Required input voltage for VPROT over temperature protection 4.5 Thermal overload trip temperature 150 TJT Thermal hysteresis V 175 °C 1 °C Unclamped single pulse inductive energy Tj=25°C EAS 550 mJ ID(ISO)=0.7A, VDD=32V Unclamped single pulse inductive energy Tj=150°C EAS 200 mJ ID(ISO)=0.7A, VDD=32V Status flag Normal operation VSTATUS 4.95 V VIN = 5V Current limit operating VSTATUS 2.5 V VIN = 5V Thermal shutdown activated VSTATUS 0.2 V VIN = 5V Normal operation VSTATUS 8.0 V VIN = 10V Current limit operation VSTATUS 3.0 V VIN = 10V Thermal shutdown activated VSTATUS 0.35 1 V VIN = 10V 1 V VIN=0V, -ID=1.4A 1 Inverse diode Source drain voltage VSD NOTES: (‡) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the datasheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous, repetitive operation. Issue 2 - March 2007 © Zetex Semiconductors plc 2007 7 www.zetex.com ZXMS6003G Typical characteristics Issue 2 - March 2007 © Zetex Semiconductors plc 2007 8 www.zetex.com ZXMS6003G Package outline - SOT223 DIM Millimeters Inches DIM Millimeters Min Max Inches Min Max Min Max Min Max A - 1.80 - 0.071 e 2.30 BSC 0.0905 BSC A1 0.02 0.10 0.0008 0.004 e1 4.60 BSC 0.181 BSC b 0.66 0.84 0.026 0.033 E 6.70 7.30 0.264 0.287 b2 2.90 3.10 0.114 0.122 E1 3.30 3.70 0.130 0.146 C 0.23 0.33 0.009 0.013 L 0.90 - 0.355 - D 6.30 6.70 0.248 0.264 - - - - - Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches Issue 2 - March 2007 © Zetex Semiconductors plc 2007 9 www.zetex.com ZXMS6003G Definitions Product change Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for the user’s application and meets with the user’s requirements. No representation or warranty is given and no liability whatsoever is assumed by Zetex with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Zetex does not assume any legal responsibility or will not be held legally liable (whether in contract, tort (including negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract, opportunity or consequential loss in the use of these circuit applications, under any circumstances. Life support Zetex products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Zetex Semiconductors plc. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labelling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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Samples may be available “Active” Product status recommended for new designs “Last time buy (LTB)” Device will be discontinued and last time buy period and delivery is in effect “Not recommended for new designs” Device is still in production to support existing designs and production “Obsolete” Production has been discontinued Datasheet status key: “Draft version” This term denotes a very early datasheet version and contains highly provisional information, which may change in any manner without notice. “Provisional version” This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance. However, changes to the test conditions and specifications may occur, at any time and without notice. “Issue” This term denotes an issued datasheet containing finalized specifications. However, changes to specifications may occur, at any time and without notice. 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