DIODES ZXMS6003G

ZXMS6003G
60V N-channel self protected enhancement mode
IntelliFETTM MOSFET with programmable current limit
Summary
Continuous drain source voltage
VDS = 60V
On-state resistance
500m⍀
Nominal load current (VIN = 5V)
1.4A
Clamping energy
550mJ
Description
Self protected low side MOSFET. Monolithic over
temperature, over current, over voltage (active
clamp) and ESD protected logic level functionality.
Intended as a general purpose switch, with status
indication and programmable current limit.
S
Status
D
Rprog
IN
Top view
Note: Rprog must be connected between the
Status and IN pins
Features
•
Over-current protection
•
Input Protection (ESD)
•
Load dump protection (actively protects
load)
Over voltage protection (active clamp)
•
Logic Level Input
Thermal shutdown with auto restart
•
High continuous current rating
•
Current limit programmable via external
resistor
•
Status pin (analog status indication)
•
Short circuit protection with auto restart
•
•
Ordering information
Device
Part mark
Reel size
(inches)
Tape width
(mm)
Quantity
per reel
ZXMS6003GTA
ZXMS6003
7
12
1,000
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ZXMS6003G
Functional block diagram
Status /
current limit
D
Over voltage
protection
IN
Human body
ESD protection
Over current
protection
Logic
Over temperature
protection
S
Applications and information
•
•
•
•
•
•
•
•
Especially suited for loads with a high in-rush current such as lamps and motors.
All types of resistive, inductive and capacitive loads in switching applications.
␮C compatible power switch for 12V and 24V DC applications.
Automotive rated.
Replaces electromechanical relays and discrete circuits.
Linear mode capability - the current-limiting protection circuitry is designed to de-activate at
low VDS, in order not to compromise the load current during normal operation. The design
max. DC operating current is therefore determined by the thermal capability of the package/
board combination, rather than by the protection circuitry.
Note: This does not compromise the product's ability to self-protect during short-circuit load
conditions.
The current limit is programmable via an external resistor Rprog connected between Status and
IN pins.
Status pin voltage reflects the gate drive being applied internally to the power MOSFET.
With VIN = 5V and Rprog = 24k⍀:
Status voltage ~ 5V indicates normal operation.
Status voltage ~ (2-3)V indicates that the device is in current-limiting mode.
Status voltage < 1V indicates that the device is in thermal shutdown.
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Absolute maximum ratings
Parameter
Symbol
Limit
Unit
VDS
60
V
Drain-source voltage for short circuit protection VIN=5V(a)
VDS(SC)
36
V
Drain-source voltage for short circuit protection VIN=10V(a)
VDS(SC)
20
V
Continuous input voltage
VIN
-0.2 ... +10
V
Peak input voltage
VIN
-0.2 ... +20
V
Operating temperature range
Tj,
-40 to +150
°C
Storage temperature range
Tstg
-55 to +150
°C
Power dissipation @ Tamb =25°C(a)
PD
2.5
W
Continuous drain current @ VIN=10V; Tamb=25°C(b)
ID
1.6
A
Continuous drain current @ VIN=5V; Tamb=25°C(b)
ID
1.4
A
Continuous source current (body diode)(b)
IS
3
A
Pulsed source current (body diode)(c)
IS
8
A
EAS
550
mJ
VLoadDump
80
V
VESD
4000
V
Continuous drain-source voltage
Unclamped single pulse inductive energy
Load dump protection
Electrostatic discharge (human body model)
DIN humidity category, DIN 40 040
E
IEC climatic category, DIN IEC 68-1
40/150/56
Thermal resistance
Parameter
Symbol
Limit
Unit
Junction to ambient
R⍜JA
50
°C/W
Junction to ambient
R⍜JA
28
°C/W
NOTES:
(a) For ID(LIM) < 1.2A (see safe operating area curve).
(b) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 board with a high coverage of single sided 2oz weight
copper.
(c) For a device surface mounted on FR4 board and measured at t<=10s.
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Characteristics
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Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Symbol
Min
Typ
Max
Unit
Conditions
Drain-source clamp voltage
VDS(AZ)
60
70
75
V
Off state drain current
IDSS
0.1
3
␮A
VDS=12V, VIN=0V
Off state drain current
IDSS
3
15
␮A
VDS=32V, VIN=0V
Input threshold voltage (*)
VIN(th)
V
VDS=VGS, ID=1mA
Input current
IIN
0.7
1.2
mA
VIN=+5V
Input current
IIN
1.5
2.7
mA
VIN=+7V
Input current
IIN
4
7
mA
VIN=+10V
Static drain-source on-state
resistance
RDS(on)
520
675
m⍀
VIN=5V, ID=0.2A
Static drain-source on-state
resistance
RDS(on)
385
500
m⍀
VIN=10V, ID=0.5A
Current limit (†)
ID(LIM)
0.2
0.3
0.4
A
VIN=5V, Vds=10V
Rprog=20k
Current limit(†)
ID(LIM)
0.7
0.9
1.2
A
VIN=10V, Vds=10V,
Rprog=20k
Static Characteristics
1
2.1
ID=10mA
Dynamic characteristics
Turn-on time (VIN to 90% ID)
ton
3.0
10
␮s
Rprog=20k, RL=22⍀,
VIN=0 to 10V,
VDD=12V
Turn-off time (VIN to 90% ID)
toff
13
20
␮s
Rprog=20k, RL=22⍀,
VIN=10V to 0V,
VDD=12V
Slew rate on (70 to 50% VDD) -dVDS/dton
8
20
V/␮s
Rprog=20k, RL=22⍀,
VIN=0 to 10V,
VDD=12V
Slew rate off (50 to 70% VDD) DVDS/dton
3.2
10
V/␮s
Rprog=20k, RL=22⍀,
VIN=10V to 0V,
VDD=12V
NOTES:
(*) Protection features may operate outside spec for VIN<4.5V
(†) The drain current is limited to a reduced value when Vds exceeds a safe level.
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ZXMS6003G
Electrical characteristics (at Tamb = 25°C unless otherwise stated) (cont.)
Parameter
Symbol
Min
Typ
Max
Unit
Conditions
Protection functions(‡)
Required input voltage for
VPROT
over temperature protection
4.5
Thermal overload trip
temperature
150
TJT
Thermal hysteresis
V
175
°C
1
°C
Unclamped single pulse
inductive energy
Tj=25°C
EAS
550
mJ
ID(ISO)=0.7A,
VDD=32V
Unclamped single pulse
inductive energy
Tj=150°C
EAS
200
mJ
ID(ISO)=0.7A,
VDD=32V
Status flag
Normal operation
VSTATUS
4.95
V
VIN = 5V
Current limit operating
VSTATUS
2.5
V
VIN = 5V
Thermal shutdown activated VSTATUS
0.2
V
VIN = 5V
Normal operation
VSTATUS
8.0
V
VIN = 10V
Current limit operation
VSTATUS
3.0
V
VIN = 10V
Thermal shutdown activated VSTATUS
0.35
1
V
VIN = 10V
1
V
VIN=0V, -ID=1.4A
1
Inverse diode
Source drain voltage
VSD
NOTES:
(‡) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
datasheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed
for continuous, repetitive operation.
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Typical characteristics
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Package outline - SOT223
DIM
Millimeters
Inches
DIM
Millimeters
Min
Max
Inches
Min
Max
Min
Max
Min
Max
A
-
1.80
-
0.071
e
2.30 BSC
0.0905 BSC
A1
0.02
0.10
0.0008
0.004
e1
4.60 BSC
0.181 BSC
b
0.66
0.84
0.026
0.033
E
6.70
7.30
0.264
0.287
b2
2.90
3.10
0.114
0.122
E1
3.30
3.70
0.130
0.146
C
0.23
0.33
0.009
0.013
L
0.90
-
0.355
-
D
6.30
6.70
0.248
0.264
-
-
-
-
-
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
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ZXMS6003G
Definitions
Product change
Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or
service. Customers are solely responsible for obtaining the latest relevant information before placing orders.
Applications disclaimer
The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for
the user’s application and meets with the user’s requirements. No representation or warranty is given and no liability whatsoever is
assumed by Zetex with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights
arising from such use or otherwise. Zetex does not assume any legal responsibility or will not be held legally liable (whether in contract,
tort (including negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract,
opportunity or consequential loss in the use of these circuit applications, under any circumstances.
Life support
Zetex products are specifically not authorized for use as critical components in life support devices or systems without the express written
approval of the Chief Executive Officer of Zetex Semiconductors plc. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body
or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labelling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to
cause the failure of the life support device or to affect its safety or effectiveness.
Reproduction
The product specifications contained in this publication are issued to provide outline information only which (unless agreed by the
company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a
representation relating to the products or services concerned.
Terms and Conditions
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when the terms of the contract shall prevail) according to region, supplied at the time of order acknowledgement.
For the latest information on technology, delivery terms and conditions and prices, please contact your nearest Zetex sales office.
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To ensure quality of service and products we strongly advise the purchase of parts directly from Zetex Semiconductors or one of our
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Zetex Semiconductors does not warrant or accept any liability whatsoever in respect of any parts purchased through unauthorized sales channels.
ESD (Electrostatic discharge)
Semiconductor devices are susceptible to damage by ESD. Suitable precautions should be taken when handling and transporting devices.
The possible damage to devices depends on the circumstances of the handling and transporting, and the nature of the device. The extent
of damage can vary from immediate functional or parametric malfunction to degradation of function or performance in use over time.
Devices suspected of being affected should be replaced.
Green compliance
Zetex Semiconductors is committed to environmental excellence in all aspects of its operations which includes meeting or exceeding
regulatory requirements with respect to the use of hazardous substances. Numerous successful programs have been implemented to
reduce the use of hazardous substances and/or emissions.
All Zetex components are compliant with the RoHS directive, and through this it is supporting its customers in their compliance with
WEEE and ELV directives.
Product status key:
“Preview”
Future device intended for production at some point. Samples may be available
“Active”
Product status recommended for new designs
“Last time buy (LTB)”
Device will be discontinued and last time buy period and delivery is in effect
“Not recommended for new designs” Device is still in production to support existing designs and production
“Obsolete”
Production has been discontinued
Datasheet status key:
“Draft version”
This term denotes a very early datasheet version and contains highly provisional information, which
may change in any manner without notice.
“Provisional version”
This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance.
However, changes to the test conditions and specifications may occur, at any time and without notice.
“Issue”
This term denotes an issued datasheet containing finalized specifications. However, changes to
specifications may occur, at any time and without notice.
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© 2007 Published by Zetex Semiconductors plc
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