ZXMS6002GQ ADVANCE INFORMATION 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET ® MOSFET WITH STATUS INDICATION Features and Benefits Product Summary Continuous Drain Source Voltage VDS= 60V Status Pin (Analog Status Indication) On-State Resistance 500mΩ Logic Level Input Nominal Load Current (VIN = 5V) 1.4A Short Circuit Protection with Auto Restart Clamping Energy 550mJ Over Voltage Protection (Active Clamp) Thermal Shutdown with Auto Restart Description Over-Current Protection Input Protection (ESD) Self protected low side MOSFET. Monolithic over temperature, over Load Dump Protection (Actively Protects Load) current, over voltage (active clamp) and ESD protected logic level High Continuous Current Rating functionality. Lead-Free Finish; RoHS compliant (Note 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Intended as a general purpose switch, with status indication and Qualified to AEC-Q101 Standards for High Reliability programmable current limit. PPAP Capable (Note 4) Applications Mechanical Data Especially suited for loads with a high in-rush current such as Case: SOT-223 lamps and motors Case Material: Molded Plastic, “Green” Molding Compound All types of resistive, inductive and capacitive loads in UL Flammability Classification Rating 94V-0 switching applications Moisture Sensitivity: Level 1 per J-STD-020 μC compatible power switch for 12V and 24V DC applications Terminals: Matte Tin Finish Automotive rated Weight: 0.112 grams (approximate) Replaces electromechanical relays and discrete circuits Linear mode capability - the current-limiting protection circuitry is designed to de-activate at low VDS, in order not to compromise the load current during normal operation. The design max. DC operating current is therefore determined by Note: The tab is connected to the drain pin and must be electrically isolated from the source pin. Connection of significant copper to the tab is recommended for best thermal performance. the thermal capability of the package/board combination, rather than by the protection circuitry. SOT-223 Note: This does not compromise the product's ability to selfprotect during short-circuit load conditions. Status pin voltage reflects the gate drive being applied internally to the power MOSFET. With VIN = 5V: Status voltage ~ 5V indicates normal operation Status voltage ~ (2-3)V indicates that the device is in current-limiting mode Status voltage < 1V indicates that the device is in thermal shutdown Top view Pin Out Top View Ordering Information Product ZXMS6002GQTA Notes: Marking ZXMS6002 Reel size (inches) 7 Tape width (mm) 12 Quantity per reel 1,000 units 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. IntelliFET is a registered trademark of Diodes Incorporated. ZXMS6002GQ Document number: DS33606 Rev. 1 - 2 1 of 9 www.diodes.com April 2014 © Diodes Incorporated ZXMS6002GQ ADVANCE INFORMATION Marking Information ZXMS 6002 ZXMS6002 = Product type Marking Code Functional Block Diagram IntelliFET is a registered trademark of Diodes Incorporated. ZXMS6002GQ Document number: DS33606 Rev. 1 - 2 2 of 9 www.diodes.com April 2014 © Diodes Incorporated ADVANCE INFORMATION ZXMS6002GQ Absolute Maximum Ratings (@Tamb = +25°C, unless otherwise stated.) PARAMETER SYMBOL LIMIT UNIT VDS 60 V Drain-Source Voltage for Short Circuit Protection VIN = 5V VDS(SC) 36 V Drain-Source Voltage for Short Circuit Protection VIN = 10V Continuous Drain-Source Voltage VDS(SC) 20 V Continuous Input Voltage VIN -0.2 to +10 V Peak Input Voltage VIN -0.2 to +20 V Operating Temperature Range Tj, -40 to +150 C Storage Temperature Range Tstg -55 to +150 C Power Dissipation at Tamb = +25C (Note 6) PD 2.5 W Continuous Drain Current @ VIN=10V; Tamb = +25C (Note 6) ID 1.6 A Continuous Drain Current @ VIN=5V; Tamb = +25C (Note 6) ID 1.4 A Continuous Source Current (Body Diode) (Note 6) IS 3 A Pulsed Source Current (Body Diode) (Note 7) IS 4.7 A EAS 550 mJ VLoadDump 80 V VESD 4000 V — — E 40/150/56 — — Unclamped Single Pulse Inductive Energy Load Dump Protection Electrostatic Discharge (Human Body Model) DIN Humidity Category, DIN 40 040 IEC Climatic Category, DIN IEC 68-1 IntelliFET is a registered trademark of Diodes Incorporated. ZXMS6002GQ Document number: DS33606 Rev. 1 - 2 3 of 9 www.diodes.com April 2014 © Diodes Incorporated ZXMS6002GQ Thermal Resistance (@Tamb = +25°C, unless otherwise stated.) ADVANCE INFORMATION PARAMETER SYMBOL VALUE UNIT Junction to Ambient RθJA 50 C/W Junction to Ambient RθJA 28 C/W Notes: 6. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 board with a high coverage of single sided 2oz weight copper. 7. For a device surface mounted on FR4 board and measured at t<=10s. Thermal Characteristics IntelliFET is a registered trademark of Diodes Incorporated. ZXMS6002GQ Document number: DS33606 Rev. 1 - 2 4 of 9 www.diodes.com April 2014 © Diodes Incorporated ZXMS6002GQ Electrical Characteristics (@Tamb = +25°C, unless otherwise stated.) ADVANCE INFORMATION Parameter SYMBOL MIN TYP MAX UNIT CONDITIONS VDS(AZ) 60 70 75 V ID = 10mA Off state Drain Current IDSS — 0.1 3 μA VDS = 12V, VIN = 0V Off state Drain Current IDSS — 3 15 μA VDS = 32V, VIN = 0V VIN(th) 1 2.1 — V VDS = VGS, ID = 1mA Input Current IIN — 0.7 1.2 mA VIN = +5V Input Current IIN — 1.5 2.7 mA VIN = +7V Input Current IIN — 4 7 mA VIN = +10V Static Drain-Source On-State Resistance RDS(on) — 520 675 mΩ VIN = 5V, ID = 0.7A Static Drain-Source On-State Resistance RDS(on) — 385 500 mΩ VIN = 10V, ID = 0.7A Current Limit (Note 9) ID(LIM) 0.7 1.0 1.5 A VIN = 5V, VDS > 5V Current Limit (Note 9) ID(LIM) 1 1.8 2.3 A VIN = 10V, VDS > 5V Turn-On Time (VIN to 90% ID) ton — 3 10 μs RL = 22ohm, VIN = 0 to 10V, VDD = 12V Turn-Off time (VIN to 90% ID) toff — 13 20 μs RL = 22ohm, VIN = 10V to 0V, VDD = 12V Slew Rate On (70 to 50% VDD) -DVDS/dton — 8 20 V/μs RL = 22ohm, VIN = 0 to 10V, VDD = 12V Slew Rate Off (50 to 70% VDD) DVDS/dton — 3.2 10 V/μs RL = 22ohm, VIN = 10V to 0V, VDD = 12V Static Characteristics Drain-Source Clamp Voltage Input Threshold Voltage (Note 8) Dynamic Characteristics Notes: 8. Protection features may operate outside spec for VIN < 4.5V 9. The drain current is limited to a reduced value when Vds exceeds a safe level. IntelliFET is a registered trademark of Diodes Incorporated. ZXMS6002GQ Document number: DS33606 Rev. 1 - 2 5 of 9 www.diodes.com April 2014 © Diodes Incorporated ZXMS6002GQ Electrical Characteristics - Continued (@Tamb = +25°C, unless otherwise specified.) ADVANCE INFORMATION PARAMETER SYMBOL MIN TYP MAX UNIT CONDITIONS VPROT 4.5 — — V — Thermal Overload Trip Temperature TJT +150 +175 — C — Thermal hysteresis — — +1 — C — Unclamped single pulse inductive energy TJ = +25C EAS 550 — — mJ ID(ISO) = 0.7A, VDD = 32V Unclamped single pulse inductive energy TJ = +150C EAS 200 — — mJ ID(ISO) = 0.7A, VDD = 32V Normal operation VSTATUS — 4.95 — V VIN = 5V Current limit operating VSTATUS — 2.5 — V VIN = 5V Thermal shutdown activated VSTATUS — 0.2 1 V VIN = 5V Normal operation VSTATUS — 8 — V VIN = 10V Current limit operation VSTATUS — 3 — V VIN = 10V Thermal shutdown activated VSTATUS — 0.35 1 V VIN = 10V VSD — — 1 V VIN = 0V, -ID = 1.4A, Protection Functions (Note 10) Required input voltage for over temperature protection Status Flag Inverse Diode Source drain voltage Note: 10. Integrated protection functions are designed to prevent IC destruction under fault conditions described in the datasheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous, repetitive operation. IntelliFET is a registered trademark of Diodes Incorporated. ZXMS6002GQ Document number: DS33606 Rev. 1 - 2 6 of 9 www.diodes.com April 2014 © Diodes Incorporated ZXMS6002GQ ADVANCE INFORMATION Typical Characteristics IntelliFET is a registered trademark of Diodes Incorporated. ZXMS6002GQ Document number: DS33606 Rev. 1 - 2 7 of 9 www.diodes.com April 2014 © Diodes Incorporated ZXMS6002GQ Package Outline Dimensions ADVANCE INFORMATION Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. D Q b1 C E SOT223 Dim Min Max Typ A 1.55 1.65 1.60 A1 0.010 0.15 0.05 b 0.60 0.80 0.70 b1 2.90 3.10 3.00 C 0.20 0.30 0.25 D 6.45 6.55 6.50 E 3.45 3.55 3.50 E1 6.90 7.10 7.00 e 4.60 e1 2.30 L 0.85 1.05 0.95 Q 0.84 0.94 0.89 All Dimensions in mm E1 Gauge Plane 0.25 Seating Plane e1 b 0° -1 0° e A1 7° 7° A L Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches. Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X1 Dimensions X1 X2 Y1 Y2 C1 C2 Y1 C1 Y2 X2 Value (in mm) 3.3 1.2 1.6 1.6 6.4 2.3 C2 IntelliFET is a registered trademark of Diodes Incorporated. ZXMS6002GQ Document number: DS33606 Rev. 1 - 2 8 of 9 www.diodes.com April 2014 © Diodes Incorporated ZXMS6002GQ ADVANCE INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright © 2014, Diodes Incorporated www.diodes.com IntelliFET is a registered trademark of Diodes Incorporated. ZXMS6002GQ Document number: DS33606 Rev. 1 - 2 9 of 9 www.diodes.com April 2014 © Diodes Incorporated