60EPU06/60APU06 Vishay High Power Products Ultrafast Soft Recovery Diode, 60 A FRED PtTM 60EPU06 FEATURES 60APU06 • Ultrafast recovery • 175 °C operating junction temperature • Designed and qualified for industrial level Cathode to base BENEFITS Cathode to base • Reduced RFI and EMI 2 2 • Higher frequency operation • Reduced snubbing • Reduced parts count 1 Cathode 3 Anode 1 Anode 3 Anode TO-247AC (modified) DESCRIPTION/APPLICATIONS TO-247AC These diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for HF welding, power converters and other applications where switching losses are not significant portion of the total losses. PRODUCT SUMMARY trr (typical) 34 ns IF(AV) 60 A VR 600 V ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Cathode to anode voltage TEST CONDITIONS VR MAX. UNITS 600 V Continuous forward current IF(AV) TC = 116 °C 60 Single pulse forward current IFSM TC = 25 °C 600 IFRM Square wave, 20 kHz Maximum repetitive forward current Operating junction and storage temperatures A 120 TJ, TStg - 55 to 175 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage SYMBOL VBR, Vr VF Reverse leakage current IR Junction capacitance CT Document Number: 93021 Revision: 02-Jun-08 TEST CONDITIONS MIN. TYP. MAX. 600 - - IF = 60 A - 1.35 1.68 IR = 100 µA IF = 60 A, TJ = 125 °C - 1.20 1.42 IF = 60 A, TJ = 175 °C - 1.11 1.30 VR = VR rated - - 50 TJ = 150 °C, VR = VR rated - - 500 VR = 600 V - 39 - For technical questions, contact: [email protected] UNITS V µA pF www.vishay.com 1 60EPU06/60APU06 Vishay High Power Products Ultrafast Soft Recovery Diode, 60 A FRED PtTM DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER Reverse recovery time SYMBOL trr TEST CONDITIONS Reverse recovery charge IRRM Qrr TYP. MAX. UNITS IF = 1 A, dIF/dt = 200 A/µs, VR = 30 V - 34 45 TJ = 25 °C - 81 - - 164 - - 7.4 - - 17.0 - TJ = 25 °C - 300 - TJ = 125 °C - 1394 - MIN. TYP. MAX. - - 0.63 - 0.2 - - 5.5 - g - 0.2 - oz. 1.2 (10) - 2.4 (20) N·m (lbf · in) TJ = 125 °C Peak recovery current MIN. TJ = 25 °C TJ = 125 °C IF = 60 A dIF/dt = 200 A/µs VR = 200 V ns A nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Thermal resistance, junction to case RthJC Thermal resistance, case to heatsink RthCS TEST CONDITIONS Mounting surface, flat, smooth and greased Weight Mounting torque Marking device www.vishay.com 2 UNITS K/W Case style TO-247AC modified 60EPU06 Case style TO-247AC 60APU06 For technical questions, contact: [email protected] Document Number: 93021 Revision: 02-Jun-08 60EPU06/60APU06 Ultrafast Soft Recovery Diode, 60 A FRED PtTM 1000 1000 100 TJ = 175 °C TJ = 125 °C TJ = 25 °C 10 100 IR - Reverse Current (µA) IF - Instantaneous Forward Current (A) Vishay High Power Products TJ = 175 °C 10 TJ = 125 °C 1 0.1 TJ = 25 °C 0.01 1 0.001 0 0.5 1.0 2.0 1.5 2.5 0 3.0 100 300 200 500 400 600 VF - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 1000 TJ = 25 °C 100 10 0 100 200 300 400 500 600 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 1 0.7 0.5 0.3 Ri (°C/W) 0.06226 0.32503 0.24271 0.1 0.1 R1 TJ 0.05 R2 τ1 τ2 R3 τ3 TC Notes: 1. Duty factor D = ton/period 2. Peak TJ = PDM x ZthJC + TC Ci = τi/Ri 0.01 0.00001 0.0001 0.001 0.01 0.1 τi (s) 0.00049 0.01294 0.24310 1 10 100 ton - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Document Number: 93021 Revision: 02-Jun-08 For technical questions, contact: [email protected] www.vishay.com 3 60EPU06/60APU06 Ultrafast Soft Recovery Diode, 60 A FRED PtTM 180 3000 150 2500 2000 Square wave (D = 0.50) 80 % rated VR applied 90 IF = 30 A IF = 60 A 1500 1000 60 500 30 See note (1) 0 0 0 20 40 60 80 10 100 100 1000 IF(AV) - Average Forward Current (A) dIF/dt (A/µs) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 7 - Typical Stored Charge vs. dIF/dt 140 300 TJ = 125 °C TJ = 25 °C 120 250 100 IF = 30 A IF = 60 A RMS limit 80 D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50 60 40 DC 20 trr (ns) Average Power Loss (W) TJ = 125 °C TJ = 25 °C DC 120 Qrr (nC) Allowable Case Temperature (°C) Vishay High Power Products 200 150 100 0 50 0 20 40 60 80 100 10 100 1000 IF(AV) - Average Forward Current (A) dIF/dt (A/µs) Fig. 6 - Forward Power Loss Characteristics Fig. 8 - Typical Reverse Recovery Time vs. dIF/dt Note Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR (1) www.vishay.com 4 For technical questions, contact: [email protected] Document Number: 93021 Revision: 02-Jun-08 60EPU06/60APU06 Ultrafast Soft Recovery Diode, 60 A FRED PtTM Vishay High Power Products VR = 200 V 0.01 Ω L = 70 µH D.U.T. dIF/dt adjust D IRFP250 G S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions Document Number: 93021 Revision: 02-Jun-08 For technical questions, contact: [email protected] www.vishay.com 5 60EPU06/60APU06 Ultrafast Soft Recovery Diode, 60 A FRED PtTM Vishay High Power Products ORDERING INFORMATION TABLE Device code 60 E P U 06 - 1 2 3 4 5 6 1 - Current rating (60 = 60 A) 2 - Circuit configuration: E = Single diode, 2 pins A = Single diode, 3 pins 3 - Package: P = TO-247AC modified 4 - Type of silicon: U = Ultrafast recovery 5 - 6 - Voltage rating (06 = 600 V) None = Standard production PbF = Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95001 Part marking information http://www.vishay.com/doc?95006 www.vishay.com 6 For technical questions, contact: [email protected] Document Number: 93021 Revision: 02-Jun-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1