ASI AM0912-300

AM0912-300
RF POWER TRANSISTOR
PACKAGE - .400 2L FLG(A)
DESCRIPTION:
2xB
.040 x 45°
C
F
E
D
G
FEATURES INCLUDE:
2xR
H
J
K
I
• Gold Metallization
• Hermetic Package
• Input/Output Matching
L
N
P
M
M AX IM UM
DIM
M INIMU M
inches / m m
inches / m m
A
.135 / 3.43
.145 / 3.68
B
.100 / 2.54
.120 / 3.05
C
.050 / 1.27
24 A
D
.376 / 9.55
E
.110 / 2.79
.130 / 3.30
50 V
F
.395 / 10.03
.407 / 10.34
940 W @ TC = ≤ 100 °C
H
MAXIMUM RATINGS
IC
VCC
PDISS
A
4x .062 x 45°
The ASI AM0912-300 is a Common
Base Transistor Designed for DME
and TACAN Pulse Power Amplifier
Applications.
TSTG
-65 °C to +200 °C
θJC
0.16 °C/W
CHARACTERISTICS
.193 / 4.90
G
.490 / 12.45
.510 / 12.95
.100 / 2.54
I
-65 °C to +250 °C
TJ
.396 / 10.06
J
.690 / 17.53
.710 / 18.03
K
.890 / 22.61
.910 / 23.11
L
.003 / 0.08
.006 / 0.18
M
.052 / 1.32
.072 / 1.83
N
.118 / 3.00
.131 / 3.33
.230 / 5.84
P
TC = 25 °C
SYMBOL
TEST CONDITIONS
BVCBO
IC = 50 mA
BVCER
IC = 50 mA
BVEBO
IE = 15 mA
ICES
VCB = 50 V
hFE
VCE = 5.0 V
POUT
PG
ηC
f = 960 to 1215 MHz
PIN = 60 W
VCC = 50 V
Pulse Width = 10 µS
Duty Cycle = 10%
RBE = 10 Ω
MINIMUM TYPICAL MAXIMUM
65
V
65
V
3.0
V
30
IC = 5.0 A
UNITS
---
10
300
7.0
38
330
7.4
45
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
mA
W
dB
%
REV. B
1/1
AM
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004
AM0912-300
REV. B
2/2