ONSEMI BAW56TT1G

BAW56TT1G
Dual Switching Diode
Features
 These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS
Compliant
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MAXIMUM RATINGS (TA = 25C)
Rating
Symbol
Max
Unit
Reverse Voltage
VR
70
Vdc
Forward Current
IF
200
mAdc
IFM(surge)
500
mAdc
Symbol
Max
Unit
Peak Forward Surge Current
CATHODE
1
3
ANODE
2
CATHODE
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation,
FR--4 Board (Note 1), TA = 25C
Derated above 25C
Thermal Resistance, Junction--to--Ambient
(Note 1)
Total Device Dissipation,
FR--4 Board (Note 2), TA = 25C
Derated above 25C
Thermal Resistance, Junction--to--Ambient
(Note 2)
Junction and Storage
Temperature Range
PD
RJA
225
1.8
mW
mW/C
555
C/W
1
CASE 463
SC--75/SOT--416
STYLE 4
MARKING DIAGRAM
PD
360
2.9
mW
mW/C
RJA
345
C/W
TJ, Tstg
--55 to +150
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR--4 @ Minimum Pad
2. FR--4 @ 1.0  1.0 Inch Pad
A1 M G
G
1
A1 = Specific Device Code
M = Date Code*
G
= Pb--Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending upon
manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
BAW56TT1G SC--75/SOT--416 3000/Tape & Reel
(Pb--Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
 Semiconductor Components Industries, LLC, 2010
October, 2010 -- Rev. 3
1
Publication Order Number:
BAW56TT1/D
BAW56TT1G
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
V(BR)
70
--
Vdc
----
30
2.5
50
--
2.0
-----
715
855
1000
1250
--
6.0
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I(BR) = 100 mAdc)
Reverse Voltage Leakage Current
(VR = 25 Vdc, TJ = 150C)
(VR = 70 Vdc)
(VR = 70 Vdc, TJ = 150C)
IR
Diode Capacitance
(VR = 0, f = 1.0 MHz)
CD
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 60 mAdc)
(IF = 150 mAdc)
VF
Reverse Recovery Time
(IF = IR = 10 mAdc, RL = 100 Ω, IR(REC) = 1.0 mAdc) (Figure 1)
trr
mAdc
pF
mVdc
ns
820 Ω
+10 V
2.0 k
100 mH
tr
0.1 mF
IF
tp
t
IF
trr
10%
t
0.1 mF
90%
DUT
50 Ω OUTPUT
PULSE
GENERATOR
50 Ω INPUT
SAMPLING
OSCILLOSCOPE
VR
IR
INPUT SIGNAL
iR(REC) = 1.0 mA
OUTPUT PULSE
(IF = IR = 10 mA; MEASURED
at iR(REC) = 1.0 mA)
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
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2
BAW56TT1G
10
IR , REVERSE CURRENT (A)
IF, FORWARD CURRENT (mA)
100
10
TA = 85C
TA = 25C
1.0
TA = 150C
TA = 125C
1.0
TA = 85C
0.1
TA = 55C
0.01
TA = -- 40C
0.1
0.2
0.4
0.6
0.8
1.0
VF, FORWARD VOLTAGE (VOLTS)
0.001
1.2
TA = 25C
10
0
Figure 2. Forward Voltage
20
30
40
VR, REVERSE VOLTAGE (VOLTS)
50
Figure 3. Leakage Current
CD , DIODE CAPACITANCE (pF)
1.75
1.5
1.25
1.0
0.75
2
0
4
6
8
VR, REVERSE VOLTAGE (VOLTS)
r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE
Figure 4. Capacitance
1.0
0.1
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
0.00001
0.0001
0.001
0.01
0.1
1.0
t, TIME (s)
Figure 5. Normalized Thermal Response
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3
10
100
1000
BAW56TT1G
PACKAGE DIMENSIONS
SC--75/SOT--416
CASE 463--01
ISSUE F
--E--
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
2
3
b 3 PL
0.20 (0.008)
e
--D--
DIM
A
A1
b
C
D
E
e
L
HE
1
M
D
0.20 (0.008) E
HE
C
INCHES
NOM MAX
0.031 0.035
0.002 0.004
0.008 0.012
0.006 0.010
0.063 0.067
0.031 0.035
0.04 BSC
0.004 0.006 0.008
0.061 0.063 0.065
MIN
0.027
0.000
0.006
0.004
0.059
0.027
STYLE 4:
PIN 1. CATHODE
2. CATHODE
3. ANODE
A
L
MILLIMETERS
MIN
NOM MAX
0.70
0.80
0.90
0.00
0.05
0.10
0.15
0.20
0.30
0.10
0.15
0.25
1.55
1.60
1.65
0.70
0.80
0.90
1.00 BSC
0.10
0.15
0.20
1.50
1.60
1.70
A1
SOLDERING FOOTPRINT*
0.356
0.014
1.803
0.071
0.787
0.031
0.508
0.020
1.000
0.039
SCALE 10:1
mm 
inches
*For additional information on our Pb--Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent
rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur.
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4
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BAW56TT1/D