BAV99LT1G Dual Series Switching Diode Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant ANODE 1 MAXIMUM RATINGS (Each Diode) Rating Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current IF 215 mAdc IFM(surge) 500 mAdc Repetitive Peak Reverse Voltage VRRM 70 V Average Rectified Forward Current (Note 1) (averaged over any 20 ms period) IF(AV) 715 mA Repetitive Peak Forward Current IFRM 450 mA Non−Repetitive Peak Forward Current t = 1.0 ms t = 1.0 ms t = 1.0 s IFSM Peak Forward Surge Current Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Range December, 2010 − Rev. 7 CASE 318 SOT−23 STYLE 11 1 2 MARKING DIAGRAM A7 MG G Symbol Max Unit PD 225 mW 1.8 mW/°C RqJA 556 °C/W PD 300 mW 1 A7 = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Package Shipping† BAV99LT1G SOT−23 (Pb−Free) 3000/Tape & Reel BAV99LT3G SOT−23 (Pb−Free) 10,000/Tape & Reel Device 2.4 mW/°C RqJA 417 °C/W TJ, Tstg −65 to +150 °C †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1. FR−5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in 99.5% alumina. © Semiconductor Components Industries, LLC, 2010 3 2.0 1.0 0.5 THERMAL CHARACTERISTICS Total Device Dissipation FR−5 Board (Note 1) TA = 25°C Derate above 25°C 3 CATHODE/ANODE A Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Characteristic CATHODE 2 1 Publication Order Number: BAV99LT1/D BAV99LT1G OFF CHARACTERISTICS (TA = 25°C unless otherwise noted) (Each Diode) Characteristic Reverse Breakdown Voltage, Symbol Min Max Unit V(BR) 70 − Vdc IR − − − 2.5 30 50 mAdc (VR = 0, f = 1.0 MHz) CD − 1.5 pF (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 50 mAdc) (IF = 150 mAdc) VF − − − − 715 855 1000 1250 mVdc (IF = IR = 10 mAdc, iR(REC) = 1.0 mAdc) RL = 100 W trr − 6.0 ns VFR − 1.75 V (I(BR) = 100 mA) Reverse Voltage Leakage Current, (VR = 70 Vdc) (VR = 25 Vdc, TJ = 150°C) (VR = 70 Vdc, TJ = 150°C) Diode Capacitance, Forward Voltage, Reverse Recovery Time, Forward Recovery Voltage, (IF = 10 mA, tr = 20 ns) CURVES APPLICABLE TO EACH DIODE 100 IR, REVERSE CURRENT (mA) 100 TA = 150°C TA = 125°C TA = 85°C 10 TA = 55°C TA = 25°C 1 TA = −40°C 0.1 TA = −55°C 0 TA = 150°C 10 TA = 125°C 1.0 TA = 85°C TA = 55°C 0.1 0.01 0.001 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 TA = 25°C 0 10 20 30 40 50 VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V) Figure 1. Forward Voltage Figure 2. Leakage Current 0.61 Cd, DIODE CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 1000 0.59 0.57 0.55 0.53 0.51 0.49 0.47 0.45 0 1 2 3 4 5 6 VR, REVERSE VOLTAGE (V) Figure 3. Capacitance http://onsemi.com 2 7 8 60 70 BAV99LT1G PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. SEE VIEW C 3 HE E c 1 DIM A A1 b c D E e L L1 HE 2 e b 0.25 q A L A1 L1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 11: PIN 1. ANODE 2. CATHODE 3. CATHODE-ANODE VIEW C SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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