TC75S58AFE/AFC TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TC75S58AFE,TC75S58AFC Single Comparator (Open-Drain Output) TC75S58AFE The TC75S58AFE and TC75S58AFC are CMOS general-purpose single comparators. The devices can operate from a single supply voltage and are designed for a lower supply-current than conventional general-purpose bipolar comparators. The output is designed for Open-Drain Output and can supply a higher voltage than the power supply. Therefore, it is possible to pull-up the voltage to a level higher than that of the power supply. The Open-Drain Output can be wired-OR with another Open-Drain Output circuit. TC75S58AFC * Output voltage should not exceed the maximum rating. Feature • Low Supply Current: IDD = 10 μA (typ.) • Single Power Supply Operation • Wide Common Mode Input : VSS to VDD − 0.9 V • Open-Drain Output Circuit • Low Input Bias Current • Small Package CSON6-P-0.45 Weight SON5-P-0.50 : 0.003 g (typ.) CSON6-P-0.45 : 0.002 g (typ.) Marking (top view) Pin Assignment (top view) TC75S58AFE TC75S58AFE 5 4 VDD OUT 5 4 TG 1 2 1 IN (−) 3 TC75S58AFC 5 4 TG 1 3 IN (+) TC75S58AFC Marking 6 2 VSS 2 VDD NC OUT 6 5 4 1 2 3 Monthly Indication 3 IN (-) 1 Vss IN (+) 2009-01-16 TC75S58AFE/AFC Absolute Maximum Ratings (Ta = 25°C) Characteristics Supply Voltage Differential Input Voltage Input Voltage Symbol Rating Unit VDD, VSS ±3.5 or 7 V DVIN ±7 V VIN VSS to VDD V Output Current IO ±35 mA Output Voltage VO VSS to VSS + 7 V Power Dissipation PD Operating Temperature Topr −40 to 85 °C Storage Temperature Tstg −55 to 125 °C TC75S58AFE 100 TC75S58AFC 100 (Note1) mW Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note: Due to the CMOS structure, this device may be susceptible to latch-up . To prevent latch-up, please take the following precautions; • Ensure that no Input pin voltage level ever exceeds Vdd or drops below Vss. In addition, check the power-on timing. • Do not subject the device to excessive noise. (Note 1): FR4 in board implementation: (25.4mm × 25.4mm × 1.6t, Cu Pad: 0.4mm2) 2 2009-01-16 TC75S58AFE/AFC Electrical Characteristics (VDD = 5 V, VSS = GND, Ta = 25°C) Symbol Test Circuit Test Condition Min Typ. Max Unit Input Offset Voltage VIO ⎯ ⎯ ⎯ ±1 ±7 mV Input Offset Current IIO ⎯ ⎯ ⎯ 1 ⎯ pA II ⎯ ⎯ ⎯ 1 ⎯ pA Characteristics Input Bias Current Common Mode Input Voltage Supply Current CMVIN IDD (Note) ⎯ ⎯ 0 ⎯ 4.1 V ⎯ ⎯ ⎯ 11 22 μA ⎯ ⎯ 94 ⎯ dB Voltage Gain GV ⎯ Sink Current Isink ⎯ VOL = 0.5 V 13 25 ⎯ mA Output Leakage Current ILEAK ⎯ VDD = 5 V , VO = 5 V ⎯ 5 ⎯ nA Off-State Leakage Current IOFF ⎯ VDD = 0 V , VO = 5 V ⎯ 5 ⎯ nA Output-Low Voltage VOL ⎯ Isink = 5.0 mA ⎯ 0.1 0.3 V Operating Supply Voltage Range VDD ⎯ 1.8 ⎯ 7.0 V tPLH (1) ⎯ Over Drive = 100 mV ⎯ 800 ⎯ tPLH (2) ⎯ TTL Step Input ⎯ 620 ⎯ tPHL (1) ⎯ Over Drive = 100 mV ⎯ 230 ⎯ tPHL (2) ⎯ TTL Step Input ⎯ 350 ⎯ tTLH ⎯ Over Drive = 100 mV ⎯ 190 ⎯ tTHL ⎯ Over Drive = 100 mV ⎯ 6 ⎯ Propagation Delay (Turn On) Propagation Delay (Turn Off) Response Time ⎯ ns ns ns Electrical Characteristics (VDD = 3 V, VSS = GND, Ta = 25°C) Symbol Test Circuit Test Condition Min Typ. Max Unit Input Offset Voltage VIO ⎯ ⎯ ⎯ ±1 ±7 mV Input Offset Current IIO ⎯ ⎯ ⎯ 1 ⎯ pA II ⎯ ⎯ ⎯ 1 ⎯ pA CMVIN ⎯ ⎯ 0 ⎯ 2.1 V ⎯ ⎯ ⎯ 10 20 μA Characteristics Input Bias Current Common Mode Input Voltage Supply Current IDD (Note) Isink ⎯ VOL = 0.5 V 6 18 ⎯ mA Output Leakage Current ILEAK ⎯ VDD = 3 V , VO = 3 V ⎯ 5 ⎯ nA Off-State Leakage Current IOFF ⎯ VDD = 0 V , VO = 3 V ⎯ 5 ⎯ nA Output-Low Voltage VOL ⎯ Isink = 5.0 mA ⎯ 0.15 0.35 V Propagation Delay (Turn On) tPLH ⎯ Over Drive = 100 mV ⎯ 590 ⎯ ns Propagation Delay (Turn Off) tPHL ⎯ Over Drive = 100 mV ⎯ 230 ⎯ ns tTLH ⎯ Over Drive = 100 mV ⎯ 170 ⎯ tTHL ⎯ Over Drive = 100 mV ⎯ 5 ⎯ Sink Current Response Time ns Note: The current consumption of this device increases as its operating frequency increases. Note that the power dissipation should not exceed the allowable power. 3 2009-01-16 TC75S58AFE/AFC IDD – f 1000 VDD = 3 V Supply Current IDD (μA) VSS = GND Ta = 25°C 100 10 1 0.001 0.01 0.1 1 Frequency f 10 100 1000 10 100 1000 (kHz) IDD – f 1000 VDD = 5 V Supply Current IDD (μA) VSS = GND Ta = 25°C 100 10 1 0.001 0.01 0.1 1 Frequency f 4 (kHz) 2009-01-16 TC75S58AFE/AFC VOL – Isink VOL – Isink 5.0 VOL (V) VDD = 3 V 2.5 VSS = GND Ta = 25°C 2.0 Output-Low Voltage Output-Low Voltage VOL (V) 3.0 1.5 1.0 0.5 0.0 0 5 10 15 25 20 Sink Current 35 30 Isink 4.5 4.0 (mA) VSS = GND Ta = 25°C 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 40 VDD = 5 V 5 10 15 Sink Current 20 25 Isink 30 35 40 (mA) PD – Ta 300 This (mW) PD Power Dissipation data was obtained from an unmounted standalone IC. If the IC is mounted on a PCB, dissipation will be greater. depending 200 on the its power Note that, PCB’s thermal characteristics, the curves may differ substantially from those shown. 100 0 −40 0 40 Ambient Temperature 80 Ta 120 (°C) 5 2009-01-16 TC75S58AFE/AFC Package Dimension Weight: 0.003 g (typ.) 6 2009-01-16 TC75S58AFE/AFC Package Dimension CSON6-P-0.45 Weight: 0.002 g (typ.) 7 2009-01-16 TC75S58AFE/AFC RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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