ONSEMI BUV26G

BUV26
Switchmode Series NPN
Silicon Power Transistor
Designed for high−speed applications.
Features
•
•
•
•
•
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Switchmode Power Supplies
High Frequency Converters
Relay Drivers
Driver
Pb−Free Package is Available*
12 AMPERES
NPN SILICON
POWER TRANSISTORS
90 VOLTS, 85 WATTS
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Value
Unit
VCEO(sus)
90
Vdc
Collector−Base Voltage
VCBO
180
Vdc
Emitter−Base Voltage
VEBO
7.0
Vdc
IC
20
30
Adc
Apk
IB
IBM
4.0
6.0
Adc
Adc
PD
PD
85
65
W
W
TJ, Tstg
− 65 to +175
°C
Rating
Collector−Emitter Voltage
Collector Current − Continuous
Collector Current − Peak (pw 10 ms)
Base Current − Continuous
Total Power Dissipation @ TC = 25°C
Total Power Dissipation @ TC = 60°C
Operating and Storage Junction
Temperature Range
ICM
MARKING
DIAGRAM
TO−220
CASE 221A
STYLE 1
1
2
3
BUV26
A
Y
WW
G
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Case
Symbol
Max
Unit
RqJC
1.76
°C/W
BUV26G
AYWW
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
= Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
BUV26
BUV26G
Package
Shipping
TO−220
50 Units/Rail
TO−220
(Pb−Free)
50 Units/Rail
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2011
July, 2011 − Rev. 2
1
Publication Order Number:
BUV26/D
BUV26
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Max
90
−
−
1.0
7.0
30
−
1.0
−
3.0
−
−
0.6
1.5
−
2.0
Unit
OFF CHARACTERISTICS
VCEO(sus)
Collector−Emitter Sustaining Voltage
(IC = 200 mA, IB = 0, L = 25 mH)
Collector Cutoff Current at Reverse Bias
(VCE = 180 V, VBE = −1.5 V, TC = 125°C)
ICEX
Emitter Base Reverse Voltage
(IE = 50 mA)
VEBO
Emitter Cutoff Current
(VEB = 5.0 V)
IEBO
Collector Cutoff Current
(VCE = 180 V, RBE = 50 W, TC = 125°C)
ICER
Vdc
mAdc
V
mAdc
mAdc
ON CHARACTERISTICS
Collector−Emitter Saturation Voltage
(IC = 6.0 A, IB = 0.4 A)
(IC = 12 A, IB = 1.2 A)
VCE(sat)
Base−Emitter Saturation Voltage
(IC = 12 A, IB = 1.2 A)
VBE(sat)
Vdc
Vdc
SWITCHING CHARACTERISTICS (Resistive Load)
Turn On Time
IC = 12 A, IB = 1.2 A
ton
−
0.6
Storage Time
VCC = 50 V, VBE = 6.0 V
ts
−
1.0
Fall Time
RB2 = 2.5 W
tf
−
0.15
Ts
−
2.0
Tf
−
.15
ms
SWITCHING CHARACTERISTICS (Inductive Load)
Storage Time
Fall Time
VCC = 50 V, IC = 12 A
IB(end) = 1.2 A, VB = 5.0 V
LB = 0.5 pH, TJ = 125°C
1. Pulse Test: Pulse width p 300 ms; Duty cycle p 2%.
http://onsemi.com
2
ms
BUV26
PACKAGE DIMENSIONS
TO−220
CASE 221A−07
ISSUE AA
−T−
B
F
4
Q
T
SEATING
PLANE
C
S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
A
1 2 3
U
H
K
Z
L
R
V
J
G
D
N
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.014
0.022
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
STYLE 1:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.36
0.55
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
BASE
COLLECTOR
EMITTER
COLLECTOR
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
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Phone: 421 33 790 2910
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Phone: 81−3−5773−3850
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3
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
BUV26/D