BUV26 Switchmode Series NPN Silicon Power Transistor Designed for high−speed applications. Features • • • • • http://onsemi.com Switchmode Power Supplies High Frequency Converters Relay Drivers Driver Pb−Free Package is Available* 12 AMPERES NPN SILICON POWER TRANSISTORS 90 VOLTS, 85 WATTS MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit VCEO(sus) 90 Vdc Collector−Base Voltage VCBO 180 Vdc Emitter−Base Voltage VEBO 7.0 Vdc IC 20 30 Adc Apk IB IBM 4.0 6.0 Adc Adc PD PD 85 65 W W TJ, Tstg − 65 to +175 °C Rating Collector−Emitter Voltage Collector Current − Continuous Collector Current − Peak (pw 10 ms) Base Current − Continuous Total Power Dissipation @ TC = 25°C Total Power Dissipation @ TC = 60°C Operating and Storage Junction Temperature Range ICM MARKING DIAGRAM TO−220 CASE 221A STYLE 1 1 2 3 BUV26 A Y WW G THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case Symbol Max Unit RqJC 1.76 °C/W BUV26G AYWW Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. = Device Code = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device BUV26 BUV26G Package Shipping TO−220 50 Units/Rail TO−220 (Pb−Free) 50 Units/Rail *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2011 July, 2011 − Rev. 2 1 Publication Order Number: BUV26/D BUV26 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Characteristic Min Max 90 − − 1.0 7.0 30 − 1.0 − 3.0 − − 0.6 1.5 − 2.0 Unit OFF CHARACTERISTICS VCEO(sus) Collector−Emitter Sustaining Voltage (IC = 200 mA, IB = 0, L = 25 mH) Collector Cutoff Current at Reverse Bias (VCE = 180 V, VBE = −1.5 V, TC = 125°C) ICEX Emitter Base Reverse Voltage (IE = 50 mA) VEBO Emitter Cutoff Current (VEB = 5.0 V) IEBO Collector Cutoff Current (VCE = 180 V, RBE = 50 W, TC = 125°C) ICER Vdc mAdc V mAdc mAdc ON CHARACTERISTICS Collector−Emitter Saturation Voltage (IC = 6.0 A, IB = 0.4 A) (IC = 12 A, IB = 1.2 A) VCE(sat) Base−Emitter Saturation Voltage (IC = 12 A, IB = 1.2 A) VBE(sat) Vdc Vdc SWITCHING CHARACTERISTICS (Resistive Load) Turn On Time IC = 12 A, IB = 1.2 A ton − 0.6 Storage Time VCC = 50 V, VBE = 6.0 V ts − 1.0 Fall Time RB2 = 2.5 W tf − 0.15 Ts − 2.0 Tf − .15 ms SWITCHING CHARACTERISTICS (Inductive Load) Storage Time Fall Time VCC = 50 V, IC = 12 A IB(end) = 1.2 A, VB = 5.0 V LB = 0.5 pH, TJ = 125°C 1. Pulse Test: Pulse width p 300 ms; Duty cycle p 2%. http://onsemi.com 2 ms BUV26 PACKAGE DIMENSIONS TO−220 CASE 221A−07 ISSUE AA −T− B F 4 Q T SEATING PLANE C S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. A 1 2 3 U H K Z L R V J G D N DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.014 0.022 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 1: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.36 0.55 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 BASE COLLECTOR EMITTER COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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