2N3700 Low Power Transistor NPN Silicon Features • MIL−PRF−19500/391 Qualified • Available as JAN, JANTX, and JANTXV • Hermetically Sealed Commercial Product with Option for Military http://onsemi.com COLLECTOR 3 Temperature Range Screening 2 BASE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Characteristic Symbol Value Unit Collector −Emitter Voltage VCEO 80 Vdc Collector −Base Voltage VCBO 140 Vdc Emitter −Base Voltage VEBO 7.0 Vdc Collector Current − Continuous IC 1.0 Adc Total Device Dissipation @ TA = 25°C PT 500 mW Total Device Dissipation @ TC = 25°C PT 1.0 W TJ, Tstg −65 to +200 °C Operating and Storage Junction Temperature Range 1 EMITTER TO−18 CASE 206AA STYLE 1 THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance, Junction to Ambient (Note 1) Characteristic RqJA 325 °C/W Thermal Resistance, Junction to Case RqJC 150 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. This number assumes a substrate of 1 oz. thick copper and a copper area of 550 mm2. ORDERING INFORMATION Device Package Shipping TO−18 Bulk JAN2N3700 JANTX2N3700 JANTXV2N3700 © Semiconductor Components Industries, LLC, 2011 July, 2011 − Rev. 0 1 Publication Order Number: 2N3700/D 2N3700 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Min Max 50 90 100 50 15 300 − 300 300 − − − 0.2 0.5 − 1.1 − 12 5.0 20 Unit ON CHARACTERISTICS hFE DC Current Gain (IC = 0.1 mAdc, VCE = 10 Vdc) (Note 2) (IC = 10 mAdc, VCE = 10 Vdc) (Note 2) (IC = 150 mAdc, VCE = 10 Vdc) (Note 2) (IC = 500 mAdc, VCE = 10 Vdc) (Note 2) (IC = 1.0 Adc, VCE = 10 Vdc) (Note 2) Collector −Emitter Saturation Voltage (Note 2) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) VCE(sat) Base −Emitter Saturation Voltage (Note 2) (IC = 150 mAdc, IB = 15 mAdc) VBE(sat) − Vdc Vdc SMALL−SIGNAL CHARACTERISTICS Output Capacitance (VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz) Cobo Small−Signal Current Gain (IC = 50 mAdc, VCE = 10 Vdc, f = 20 MHz) |hfe| 2. Pulse Test: See section 4 of MIL−STD−750. http://onsemi.com 2 pF − 2N3700 PACKAGE DIMENSIONS TO−18 3 CASE 206AA−01 ISSUE O B A B DETAIL X U P C L R F U A SEATING PLANE K NOTE 5 E T NOTE 7 D NOTES 4 & 6 0.007 (0.18MM) A B S C 3X DETAIL X M N H 2 1 3 J M C LEAD IDENTIFICATION DETAIL NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. DIMENSION J MEASURED FROM DIAMETER A TO EDGE. 4. LEAD TRUE POSITION TO BE DETERMINED AT THE GUAGE PLANE DEFINED BY DIMENSION R. 5. DIMENSION F APPLIES BETWEEN DIMENSION P AND L. 6. DIMENSION D APPLIES BETWEEN DIMENSION L AND K. 7. BODY CONTOUR OPTIONAL WITHIN ZONE DEFINED BY DIMEN SIONS A, B, AND T. DIM A B C D E F H J K L M N P R T U MILLIMETERS MIN MAX 5.31 5.84 4.52 4.95 4.32 5.33 0.41 0.53 --0.76 0.41 0.48 0.91 1.17 0.71 1.22 12.70 19.05 6.35 --45_BSC 2.54 BSC --1.27 1.37 BSC --0.76 2.54 --- INCHES MIN MAX 0.209 0.230 0.178 0.195 0.170 0.210 0.016 0.021 --0.030 0.016 0.019 0.036 0.046 0.028 0.048 0.500 0.750 0.250 --45 _BSC 0.100 BSC --0.050 0.054 BSC --0.030 0.100 --- STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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