PHILIPS BGY67_01

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D252
BGY67
200 MHz, 22 dB gain reverse
amplifier
Product specification
Supersedes data of 1997 Apr 15
2001 Oct 18
Philips Semiconductors
Product specification
200 MHz, 22 dB gain reverse amplifier
FEATURES
PINNING - SOT115J
• Excellent linearity
PIN
PIN CONFIGURATION
DESCRIPTION
• Extremely low noise
1
input
• Silicon nitride passivation
2
common
• Rugged construction
3
common
• TiPtAu metallized crystals ensure
optimal reliability.
5
+VB
7
common
8
common
9
output
DESCRIPTION
BGY67
fpage
1
2
8
5 7 9
3
Side view
MSA319
Fig.1 Simplified outline.
Hybrid amplifier module for CATV
systems operating over a frequency
range of 5 to 200 MHz at a voltage
supply of +24 V (DC). The device is
intended as a reverse amplifier for
use in two way systems.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Gp
power gain
f = 10 MHz
21.5
−
22.5
dB
Itot
total current consumption (DC)
VB = +24 V
−
215
230
mA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
Vi
RF input voltage
−
65
dBmV
Tstg
storage temperature
−40
+100
°C
Tmb
mounting base operating temperature
−20
+90
°C
2001 Oct 18
2
Philips Semiconductors
Product specification
200 MHz, 22 dB gain reverse amplifier
BGY67
CHARACTERISTICS
Table 1
Bandwidth 5 to 200 MHz; Tmb = 30 °C; ZS = ZL = 75 Ω
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Gp
power gain
f = 10 MHz
21.5
−
SL
slope cable equivalent
f = 5 to 200 MHz
−0.2
−
+0.5
dB
FL
flatness of frequency response
f = 5 to 200 MHz
−
−
±0.2
dB
S11
input return losses
f = 5 to 200 MHz
20
−
−
dB
S22
output return losses
f = 5 to 200 MHz
20
−
−
dB
CTB
composite triple beat
22 channels flat; Vo = 50 dBmV; −
measured at 175.25 MHz
−
−67
dB
Xmod
cross modulation
22 channels flat; Vo = 50 dBmV; −
measured at 55.25 MHz
−
−60
dB
d2
second order distortion
Vo = 50 dBmV; note 1
−
−
−67
dB
Vo
output voltage
dim = −60 dB; note 2
67
−
−
dBmV
dim = −60 dB; note 3
64
−
−
dBmV
22.5
dB
F
noise figure
f = 200 MHz
−
−
5.5
dB
Itot
total current consumption
DC value; VB = +24 V; note 4
−
215
230
mA
Notes
1. fp = 83.25 MHz; Vp = 50 dBmV;
fq = 109.25 MHz; Vq = 50 dBmV;
measured at fp + fq = 192.5 MHz.
2. Measured according to DIN45004B;
fp = 35.25 MHz; Vo = Vp;
fq = 42.25 MHz; Vq = Vo −6 dB;
fr = 44.25 MHz; Vr = Vo −6 dB;
measured at fp + fq − fr = 33.25 MHz.
3. Measured according to DIN45004B;
fp = 187.25 MHz; Vo = Vp;
fq = 194.25 MHz; Vq = Vo −6 dB;
fr = 196.25 MHz; Vr = Vo −6 dB;
measured at fp + fq − fr = 185.25 MHz.
4. The module normally operates at VB = +24 V, but is able to withstand supply transients up to +30 V.
2001 Oct 18
3
Philips Semiconductors
Product specification
200 MHz, 22 dB gain reverse amplifier
BGY67
PACKAGE OUTLINE
Rectangular single-ended package; aluminium flange; 2 vertical mounting holes;
2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads
SOT115J
D
E
Z
p
A2
1
2
3
5
7
8
9
A
L
F
S
W
c
e
b
w M
e1
d
U2
q2
Q
B
y M B
q1
y M B
y M B
p
U1
q
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A2
A
max. max.
mm 20.8
9.1
OUTLINE
VERSION
b
c
d
D
E
max. max. max.
e
e1
F
0.51
0.25 27.2 2.54 13.75 2.54 5.08 12.7
0.38
L
min.
p
Q
max.
8.8
4.15
3.85
2.4
REFERENCES
IEC
JEDEC
EIAJ
q1
q2
38.1 25.4 10.2
S
U1
U2
max.
4.2 44.75
8
EUROPEAN
PROJECTION
W
w
6-32 0.25
UNC
y
Z
max.
0.1
3.8
ISSUE DATE
99-02-06
SOT115J
2001 Oct 18
q
4
Philips Semiconductors
Product specification
200 MHz, 22 dB gain reverse amplifier
BGY67
DATA SHEET STATUS
DATA SHEET STATUS(1)
PRODUCT
STATUS(2)
DEFINITIONS
Objective data
Development
This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data
Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DEFINITIONS
DISCLAIMERS
Short-form specification  The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes  Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2001 Oct 18
5
Philips Semiconductors
Product specification
200 MHz, 22 dB gain reverse amplifier
NOTES
2001 Oct 18
6
BGY67
Philips Semiconductors
Product specification
200 MHz, 22 dB gain reverse amplifier
NOTES
2001 Oct 18
7
BGY67
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: [email protected].
SCA73
© Koninklijke Philips Electronics N.V. 2001
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613518/03/pp8
Date of release: 2001
Oct 18
Document order number:
9397 750 08799