DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D252 BGY67 200 MHz, 22 dB gain reverse amplifier Product specification Supersedes data of 1997 Apr 15 2001 Oct 18 Philips Semiconductors Product specification 200 MHz, 22 dB gain reverse amplifier FEATURES PINNING - SOT115J • Excellent linearity PIN PIN CONFIGURATION DESCRIPTION • Extremely low noise 1 input • Silicon nitride passivation 2 common • Rugged construction 3 common • TiPtAu metallized crystals ensure optimal reliability. 5 +VB 7 common 8 common 9 output DESCRIPTION BGY67 fpage 1 2 8 5 7 9 3 Side view MSA319 Fig.1 Simplified outline. Hybrid amplifier module for CATV systems operating over a frequency range of 5 to 200 MHz at a voltage supply of +24 V (DC). The device is intended as a reverse amplifier for use in two way systems. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Gp power gain f = 10 MHz 21.5 − 22.5 dB Itot total current consumption (DC) VB = +24 V − 215 230 mA LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER MIN. MAX. UNIT Vi RF input voltage − 65 dBmV Tstg storage temperature −40 +100 °C Tmb mounting base operating temperature −20 +90 °C 2001 Oct 18 2 Philips Semiconductors Product specification 200 MHz, 22 dB gain reverse amplifier BGY67 CHARACTERISTICS Table 1 Bandwidth 5 to 200 MHz; Tmb = 30 °C; ZS = ZL = 75 Ω SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Gp power gain f = 10 MHz 21.5 − SL slope cable equivalent f = 5 to 200 MHz −0.2 − +0.5 dB FL flatness of frequency response f = 5 to 200 MHz − − ±0.2 dB S11 input return losses f = 5 to 200 MHz 20 − − dB S22 output return losses f = 5 to 200 MHz 20 − − dB CTB composite triple beat 22 channels flat; Vo = 50 dBmV; − measured at 175.25 MHz − −67 dB Xmod cross modulation 22 channels flat; Vo = 50 dBmV; − measured at 55.25 MHz − −60 dB d2 second order distortion Vo = 50 dBmV; note 1 − − −67 dB Vo output voltage dim = −60 dB; note 2 67 − − dBmV dim = −60 dB; note 3 64 − − dBmV 22.5 dB F noise figure f = 200 MHz − − 5.5 dB Itot total current consumption DC value; VB = +24 V; note 4 − 215 230 mA Notes 1. fp = 83.25 MHz; Vp = 50 dBmV; fq = 109.25 MHz; Vq = 50 dBmV; measured at fp + fq = 192.5 MHz. 2. Measured according to DIN45004B; fp = 35.25 MHz; Vo = Vp; fq = 42.25 MHz; Vq = Vo −6 dB; fr = 44.25 MHz; Vr = Vo −6 dB; measured at fp + fq − fr = 33.25 MHz. 3. Measured according to DIN45004B; fp = 187.25 MHz; Vo = Vp; fq = 194.25 MHz; Vq = Vo −6 dB; fr = 196.25 MHz; Vr = Vo −6 dB; measured at fp + fq − fr = 185.25 MHz. 4. The module normally operates at VB = +24 V, but is able to withstand supply transients up to +30 V. 2001 Oct 18 3 Philips Semiconductors Product specification 200 MHz, 22 dB gain reverse amplifier BGY67 PACKAGE OUTLINE Rectangular single-ended package; aluminium flange; 2 vertical mounting holes; 2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads SOT115J D E Z p A2 1 2 3 5 7 8 9 A L F S W c e b w M e1 d U2 q2 Q B y M B q1 y M B y M B p U1 q 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A2 A max. max. mm 20.8 9.1 OUTLINE VERSION b c d D E max. max. max. e e1 F 0.51 0.25 27.2 2.54 13.75 2.54 5.08 12.7 0.38 L min. p Q max. 8.8 4.15 3.85 2.4 REFERENCES IEC JEDEC EIAJ q1 q2 38.1 25.4 10.2 S U1 U2 max. 4.2 44.75 8 EUROPEAN PROJECTION W w 6-32 0.25 UNC y Z max. 0.1 3.8 ISSUE DATE 99-02-06 SOT115J 2001 Oct 18 q 4 Philips Semiconductors Product specification 200 MHz, 22 dB gain reverse amplifier BGY67 DATA SHEET STATUS DATA SHEET STATUS(1) PRODUCT STATUS(2) DEFINITIONS Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2001 Oct 18 5 Philips Semiconductors Product specification 200 MHz, 22 dB gain reverse amplifier NOTES 2001 Oct 18 6 BGY67 Philips Semiconductors Product specification 200 MHz, 22 dB gain reverse amplifier NOTES 2001 Oct 18 7 BGY67 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: [email protected]. SCA73 © Koninklijke Philips Electronics N.V. 2001 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613518/03/pp8 Date of release: 2001 Oct 18 Document order number: 9397 750 08799