DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D248 BGD885 860 MHz, 17 dB gain power doubler amplifier Product specification Supersedes data of 2001 Oct 25 2001 Nov 02 Philips Semiconductors Product specification 860 MHz, 17 dB gain power doubler amplifier FEATURES BGD885 PINNING - SOT115D • Excellent linearity PIN • Extremely low noise 1 • Silicon nitride passivation 2, 3, 5, 6, 7 • Rugged construction 4 • Gold metallization ensures excellent reliability. DESCRIPTION input common 10 V, 200 mA supply terminal 8 +VB 9 output DESCRIPTION Hybrid amplifier module for CATV/MATV systems operating over a frequency range of 40 to 860 MHz at a voltage supply of 24 V (DC). handbook, halfpage 1 2 3 4 5 6 7 8 9 Side view MBK049 Fig.1 Simplified outline. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Gp power gain f = 50 MHz 16.5 17.5 dB Itot total current consumption (DC) VB = 24 V − 450 mA LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER MIN. MAX. UNIT VB DC supply voltage − 26 V Vi RF input voltage − 65 dBmV Tstg storage temperature −40 +100 °C Tmb operating mounting base temperature −20 +100 °C 2001 Nov 02 2 Philips Semiconductors Product specification 860 MHz, 17 dB gain power doubler amplifier BGD885 CHARACTERISTICS Table 1 Bandwidth 40 to 860 MHz; VB = 24 V; Tmb = 35 °C; ZS = ZL = 75 Ω SYMBOL PARAMETER CONDITIONS MIN. 16.5 MAX. 17.5 UNIT Gp power gain f = 50 MHz dB SL slope cable equivalent f = 40 to 860 MHz 0.2 1.6 dB FL flatness of frequency response f = 40 to 860 MHz − ±0.5 dB S11 input return losses f = 40 MHz; note 1 20 − dB f = 800 to 860 MHz 10 − dB S22 output return losses f = 40 MHz; note 1 20 − dB f = 800 to 860 MHz 10 − dB d2 second order distortion note 2 − −53 dB Vo output voltage dim = −60 dB; note 3 64 − dBmV dim = −60 dB; note 4 63 − dBmV f = 50 MHz − 8 dB f = 550 MHz − 8 dB f = 650 MHz − 8 dB f = 750 MHz − 8 dB F Itot noise figure total current consumption (DC) f = 860 MHz − 8 dB note 5 − 450 mA Notes 1. Decrease per octave of 1.5 dB. 2. Vp = 59 dBmV at fp = 349.25 MHz; Vq = 59 dBmV at fq = 403.25 MHz; measured at fp + fq = 752.5 MHz. 3. Measured according to DIN45004B: fp = 341.25 MHz; Vp = Vo; fq = 348.25 MHz; Vq = Vo −6 dB; fr = 350.25 MHz; Vr = Vo −6 dB; measured at fp + fq − fr = 339.25 MHz. 4. Measured according to DIN45004B: fp = 851.25 MHz; Vp = Vo; fq = 858.25 MHz; Vq = Vo −6 dB; fr = 860.25 MHz; Vr = Vo −6 dB; measured at fp + fq − fr = 849.25 MHz. 5. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V. 2001 Nov 02 3 Philips Semiconductors Product specification 860 MHz, 17 dB gain power doubler amplifier BGD885 BGD885 1 2 3 4 5 6 7 8 9 input output 10 V C1 C2 VB = 24 V MEA094-2 Fig.2 Test circuit. List of components (see Fig.2) COMPONENT C1 DESCRIPTION ceramic multilayer capacitor VALUE 1 nF (max.) C2 ceramic multilayer capacitor 1 nF R resistor 56 Ω, 2 W 2001 Nov 02 4 Philips Semiconductors Product specification 860 MHz, 17 dB gain power doubler amplifier BGD885 PACKAGE OUTLINE Rectangular single-ended package; aluminium flange; 2 vertical mounting holes; 2 x 6-32 UNC and 2 extra horizontal mounting holes; 9 gold-plated in-line leads SOT115D D E Z A2 1 2 3 4 5 6 7 8 9 A L F S W c e d U2 b q2 e1 Q w M y M B q1 B y M B y M B P U1 q 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A2 A max. max. mm 20.8 9.1 OUTLINE VERSION b c d D E max. max. max. e e1 F 0.51 0.25 27.2 2.54 13.75 2.54 5.08 12.7 0.38 L Q ∅P min. max. 8.8 4.15 3.85 REFERENCES IEC JEDEC EIAJ q1 q2 38.1 25.4 10.2 S U1 U2 max. 4.2 44.75 8 EUROPEAN PROJECTION W w 6-32 0.25 UNC y Z max. 0.1 3.8 ISSUE DATE 97-04-10 SOT115D 2001 Nov 02 2.4 q 5 Philips Semiconductors Product specification 860 MHz, 17 dB gain power doubler amplifier BGD885 DATA SHEET STATUS DATA SHEET STATUS(1) PRODUCT STATUS(2) DEFINITIONS Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2001 Nov 02 6 Philips Semiconductors Product specification 860 MHz, 17 dB gain power doubler amplifier NOTES 2001 Nov 02 7 BGD885 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: [email protected]. SCA73 © Koninklijke Philips Electronics N.V. 2001 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613518/07/pp8 Date of release: 2001 Nov 02 Document order number: 9397 750 09031