WINSEMI SBP1710-R

P1710-R
SB
SBP1710-R
High Voltage Fast-Switching NPN Power Transistor
Features
■
■
■
Very high switching speed
High Voltage Capability
Wide Reverse Bias SOA
General Description
This Device is designed for high voltage, High speed
switching
characteristics required such as
lighting
system, switching mode power supply.
Absolute Maximum Ratings
Symbol
Parameter
Test Conditions
Value
Units
VCBO
Collect-Emitter Voltage
VBE=0
900
V
VCEO
Collector-Emitter Voltage
IB=0
500
V
VEBO
Emitter-Base Voltage
IC=0
7
V
IC
Collector Current
7
A
ICP
Collector pulse Current
14
A
PC
Total Dissipation at Tc=25℃
45
W
TJ
Operation Junction Temperature
150
℃
TSTG
Storage Temperature
-55~150
℃
(Note)
Rev.A01 Jun.2011
Copyright@WinSemi Semiconductor Co., Ltd., All right reserved.
T111-3
SBP1710-R
Electrical Characteristics (T =25℃ unless otherwise noted)
C
Symbol
Parameter
Test conditions
Value
Min
Typ
Max
Units
ICBO
Collector Cut-off Current
VCB=500V, Ie=0A
-
-
10
µA
IEBO
Emitter Cut-off Current
VEB=5V, Ic=0A
-
-
10
µA
BVCBO
Collector-Base Breakdown Voltage
Ic=1mA,Ie=0
900
-
-
V
BVCEO
Collector-Emitter Breakdown Voltage
Ic=5mA,Ib=open
500
-
-
V
BVEBO
Emitter-Base Breakdown Voltage
Ie=1mA,Ic=0
7
-
-
V
VCE(sat)
Collector -Emitter Saturation Voltage
Ic=3A,Ib=0.6A
-
-
1
V
VBE(sat)
Base -Emitter saturation Voltage
Ic=3A,Ib=0.6A
-
-
1.5
V
IEBO
Emitter -Base Cutoff Current
Veb=5V,Ic=0
-
-
10
µA
Vce=5V,Ic=0.6A
20
-
50
hFE
DC Current Gain
Vce=5V,Ic=3A
8
-
-
fT
Gain-Bandwidth Product
Vce=10V,Ic=0.6A
-
-
18
MHz
Cob
Output Capacitance
VCB=10V, f=1MHz
-
-
80
pF
ton
Turn on Time
VCC=5V,IC=0.5A
-
-
0.6
µs
ts
Storage Time
VCC=5V,IC=0.5A
3
-
8
µs
tf
Fall Time
VCC=5V,IC=0.5A
-
-
0.4
µs
Note:
Pulse Test: Pulse width≤300µs,Duty cycle 10%
2/6
Steady, all for your advance
SBP1710-R
nt VS
Fig. 1 Collector Curre
Current
Collector-Emitter Voltage
Fig. 3 DC Current Gain
nt VS
Fig. 2 Collector Curre
Current
-Base Voltage
Emitter
Emitter-Base
Fig. 4 Collector-Emitter Saturation Voltage
-Emitter Saturation Voltage
Fig. 5 Base
Base-Emitter
6 Switching Time
Fig.
Fig.6
3/6
Steady, all for your advance
SBP1710-R
7 Safe Operation Area
Fig.
Fig.7
8 Reverse Biased Safe Operation Area
Fig.
Fig.8
9 Thermal Resistance
Fig.
Fig.9
10 Power Derating
Fig.
Fig.10
4/6
Steady, all for your advance
SBP1710-R
Fig.11 Inductive Load Switching & RBSOA Test Circuit
Fig.12 Inductive Load Switching &RBSOA Test Circuit
5/6
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SBP1710-R
To220 Package Dimension
To-220
Unit:mm
6/6
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