< Silicon RF Power Semiconductors > RD35HUF2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 35W 24.60 18.00 a' 0.10 APPLICATION 4 RD35HUF2 Lot No.-G ○ FEATURES 5 6 3.63 0.22 3.15 8 7 a 3.10 2.40 4 3.65 3 0.10 2 1 6 5 RD35HUF2 Pin 1. SOURCE (COMMON) 2. OPEN 3. DRAIN 4. SOURCE (COMMON) 5. SOURCE (COMMON) 6. OPEN 7. GATE 8. SOURCE (COMMON) 5.87 1. Supply with Tape and Reel. 500 Units per Reel. 2. Employing Mold Package 3. High Power and High Efficiency Pout=43Wtyp, Drain Effi.=60%typ @ Vds=12.5V Idq=0.5A Pin=3.0W f=530MHz Pout=45Wtyp, Drain Effi.=72%typ @ Vds=12.5V Idq=1.0A Pin=3.0W f=175MHz 4. Integrated gate protection diode 3 3. 70 5.56 1 2 0.34 RD35HUF2 is MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications. a-a' SECTION 12.95 12.69 6.38 DESCRIPTION OUTLINE DRAWING 13.40 ○ 8 7 Lot No.-G For output stage of high power amplifiers in VHF/UHF band mobile radio sets. Unit: mm RoHS COMPLIANT RD35HUF2 is a RoHS compliant product. RoHS compliance is indicating by the letter “G” after the Lot Marking. This product includes the lead in high melting temperature type solders. However, it is applicable to the following exceptions of RoHS Directions. 1. Lead in high melting temperature type solders. (i.e. tin-lead solders alloys containing more than 85% lead.) Publication Date : May 2011 1 < Silicon RF Power Semiconductors > RD35HUF2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 35W ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c PARAMETER Drain to Source Voltage Gate to Source Voltage Channel Dissipation Input Power Drain Current Channel Temperature Storage Temperature Thermal Resistance CONDITIONS Vgs=0V Vds=0V Tc=25°C Zg=Zl=50Ω Junction to Case RATINGS 40 -5/+10 166 6 10 175 -40 to +175 0.9 UNIT V V W W A °C °C °C/W Note: Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL PARAMETER IDSS* IGSS* VTH* Pout1 D1 Pout2 D2 Zero Gate Voltage Drain Current Gate to Source Leak Current Gate Threshold Voltage Output Power Drain Efficiency Output Power Drain Efficiency VSWRT Load VSWR Tolerance CONDITIONS VDS=37V, VGS=0V VGS=10V, VDS=0V VDS=12V, IDS=1mA f=530MHz*,VDS=12.5V, Pin=3.0W, Idq=500mA f=175MHz**,VDS=12.5V, Pin=3.0W, Idq=500mA MIN 1.6 - All phase, VDS=16.3V increased after Pout adjusted to 40W(Zg/Zl=50Ω) by 20:1 Pin(under f=135MHz**, VDS=12.5V and Idq=500mA) Note: Above parameters, ratings, limits and conditions are subject to change. * In Mitsubishi UHF Evaluation Board ** In Mitsubishi VHF Evaluation Board Publication Date : May 2011 2 LIMITS TYP MAX. 150 2.5 2.0 2.4 43 60 45 72 - - UNIT μA μA V W % W % VSWR < Silicon RF Power Semiconductors > RD35HUF2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 35W TYPICAL CHARACTERISTICS (These are only typical curves and devices are not necessarily guaranteed at these curves.) VDS-IDS Characteristics VGS-IDS Characteristics 5.0V 15 10 4.5V 9 Ta=+25℃ Ta=+25℃ VDS=10V 8 7 10 IDS(A) IDS (A) ｇｍ（S) 4.0V 3.5V 5 6 gm 5 4 3 IDS 2 3.0V VGS=2.7V 0 0 2 4 6 8 VDS(V) 10 12 1 0 14 0 0.5 VDS VS. Ciss Characteristics Ta=+25℃ f=1MHz 3 3.5 30 35 4 Ta=+25℃ f=1MHz 250 200 Coss (pF) Ciss (pF) 2.5 VDS VS. Coss Characteristics 200 150 100 150 100 50 50 0 0 5 10 15 20 25 VDS(V) 30 35 40 30 35 40 0 0 VDS VS. Crss Characteristics 30 Ta=+25℃ f=1MHz 20 Crss (pF) 2 300 250 15 10 5 0 0 1.5 VGS(V) 300 25 1 5 10 15 20 25 VDS(V) Publication Date : May 2011 3 5 10 15 20 25 VDS(V) 40 < Silicon RF Power Semiconductors > RD35HUF2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 35W VHF-band TYPICAL CHARACTERISTICS (These are only typical curves and devices are not necessarily guaranteed at these curves.) Frequency Characteristics @f=135 to 175MHz Ta=+25deg.C Vds=12.5V, Idq=0.5A, Pin=3W 80 16 ηD 60 50 14 Gp 12 10 Pout 40 30 8 6 Idd 20 4 130 135 140 145 150 155 160 165 170 175 180 f (MHz) Publication Date : May 2011 4 Gp(dB), Idd(A) Pout(W) , Drain Effi(%) 70 < Silicon RF Power Semiconductors > RD35HUF2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 35W VHF-band TYPICAL CHARACTERISTICS (These are only typical curves and devices are not necessarily guaranteed at these curves.) Output Power versus Input Power Input Return Loss versus Output Power Ta=+25deg.C,Vds=12.5V, Idq=0.5A Ta=+25deg.C,Vds=12.5V, Idq=0.5A 60 0 IRL, INPUT RETURN LOSS (dB) Pout , OUTPUT POWER(W) 175MHz 50 40 155MHz 135MHz 30 20 10 0 -5 -10 155MHz -15 175MHz -20 -25 -30 0 1 2 3 4 Pin, INPUT POWER(W) 5 6 0 Gain versus Output Power 10 20 30 40 50 Pout, OUTPUT POWER(W) 60 Drain Efficiency versus Output Power Ta=+25deg.C,Vds=12.5V, Idq=0.5A Ta=+25deg.C,Vds=12.5V, Idq=0.5A 80 21 155MHz 135MHz 19 18 175MHz 17 175MHz 70 η, DRAIN EFFICIENCY(%) 20 Gp, POWER GAIN(dB) 135MHz 16 15 14 13 155MHz 60 50 135MHz 40 30 20 10 12 0 11 0 10 20 30 40 50 Pout, OUTPUT POWER(W) 0 60 Publication Date : May 2011 5 10 20 30 40 50 Pout, OUTPUT POWER(W) 60 < Silicon RF Power Semiconductors > RD35HUF2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 35W VHF-band TYPICAL CHARACTERISTICS (These are only typical curves and devices are not necessarily guaranteed at these curves.) Output Power versus Biasing Current Drain Efficiency versus Biasing Current Pin=3W Ta=+25deg.C,Vds=12.5V Pin=3W Ta=+25deg.C,Vds=12.5V 80 50 155MHz η, DRAIN EFFICIENCY (%) Po ut , OUTPUT POW ER(W ) 175MHz 45 40 135MHz 155MHz 35 30 200 175MHz 70 60 135MHz 50 40 400 600 800 1000 1200 IDQ, BIASING CURRENT(mA) 1400 200 400 600 800 1000 1200 IDQ, BIASING CURRENT(mA) 1400 Output Power versus Supply Voltage Drain Efficiency versus Supply Voltage Pin=3W Ta=+25deg.C, Idq=0.5A Pin=3W Ta=+25deg.C, Idq=0.5A 80 70 60 η , D RA IN E FF IC IE NC Y (% ) Pou t , OUTPUT POWER(W ) 175MHz 175MHz 50 135MHz 40 155MHz 30 20 70 155MHz 60 135MHz 50 40 10 11 12 13 14 VDD, SUPPLY VOLTAGE(V) 15 10 Publication Date : May 2011 6 11 12 13 14 VDD, SUPPLY VOLTAGE(V) 15 < Silicon RF Power Semiconductors > RD35HUF2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 35W UHF-band, 380 - 430MHz, TYPICAL CHARACTERISTICS (These are only typical curves and devices are not necessarily guaranteed at these curves.) Output Power versus Input Power Input Return Loss versus Output Power Ta=+25deg.C,Vds=12.5V, Idq=0.7A Ta=+25deg.C,Vds=12.5V, Idq=0.7A 60 0 380MHz IRL, INPUT RETURN LOSS (dB) Pout , OUTPUT POWER(W) 430MHz 50 405MHz 40 380MHz 30 20 10 0 -5 -10 -15 405MHz -20 -25 430MHz -30 -35 -40 0 1 2 3 4 Pin, INPUT POWER(W) 5 6 0 Gain versus Output Power 20 30 40 50 Pout, OUTPUT POWER(W) 60 Drain Efficiency versus Output Power Ta=+25deg.C,Vds=12.5V, Idq=0.7A Ta=+25deg.C,Vds=12.5V, Idq=0.7A 70 16 405MHz 430MHz η, DRAIN EFFICIENCY(%) 15 430MHz Gp, POWER GAIN(dB) 10 14 13 380MHz 12 11 10 60 50 405MHz 40 380MHz 30 20 10 0 9 0 10 20 30 40 50 Pout, OUTPUT POWER(W) 60 0 Publication Date : May 2011 7 10 20 30 40 50 Pout, OUTPUT POWER(W) 60 < Silicon RF Power Semiconductors > RD35HUF2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 35W UHF-band, 380 - 430MHz, TYPICAL CHARACTERISTICS (These are only typical curves and devices are not necessarily guaranteed at these curves.) Output Power versus Input Power, Digital Modulation Ta=+25deg.C,Vds=12.5V, Idq=0.7A Ta=+25deg.C,Vds=12.5V, Idq=0.7A (MOD: π/4 DQPSK, 18kbps, α=0.35, Ch-BW/Sp=18kHz/25kHz) (MOD: π/4 DQPSK, 18kbps, α=0.35, Ch-BW/Sp=18kHz/25kHz) 50 Pout , OUTPUT POWER(dBm) Pout , OUTPUT POWER(W) 40 30 20 405MHz 10 380MHz 430MHz 0 45 405MHz 40 35 30 380MHz 430MHz 25 20 10 20 30 Pin, INPUT POWER(dBm) 10 20 30 Pin, INPUT POWER(dBm) Gain and Adjacent Channel Power Ratio versus Output Power, Digital Modulation Ta=+25deg.C,Vds=12.5V, Idq=0.7A Ta=+25deg.C,Vds=12.5V, Idq=0.7A 16 430MHz 16 Gp -20 380MHz 405MHz 12 -30 -40 430MHz 11 ACP-Upper(dBc) 14 -50 380MHz -10 14 -20 380MHz 405MHz 13 12 -40 430MHz 380MHz 11 ACP -60 40 Pout, OUTPUT POWER(dBm) -30 -50 ACP 10 30 Gp 15 Gp, POWER GAIN(dB) -10 13 0 430MHz 15 Gp, POWER GAIN(dB) (MOD: π/4 DQPSK, 18kbps, α=0.35, Ch-BW/Sp=18kHz/25kHz) 0 10 50 -60 30 Publication Date : May 2011 8 40 Pout, OUTPUT POWER(dBm) 50 ACP-Lower(dBc) (MOD: π/4 DQPSK , 18kbps, α=0.35, Ch-BW/Sp=18kHz/25kHz) < Silicon RF Power Semiconductors > RD35HUF2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 35W UHF-band, 450 - 530MHz, TYPICAL CHARACTERISTICS (These are only typical curves and devices are not necessarily guaranteed at these curves.) Frequency Characteristics @f=450 to 530MHz Ta=+25deg.C, Vds=12.5V,Idq=0.5A, Pin=3W 70 16 ηD 50 40 14 Gp 12 10 Pout 30 8 Idd 20 6 10 4 440 450 460 470 480 490 500 510 520 530 540 f (MHz) Publication Date : May 2011 9 Gp(dB), Idd(A) Pout(W) , Drain Effi(%) 60 < Silicon RF Power Semiconductors > RD35HUF2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 35W UHF-band, 450 - 530MHz, TYPICAL CHARACTERISTICS (These are only typical curves and devices are not necessarily guaranteed at these curves.) Output Power versus Input Power Input Return Loss versus Output Power Ta=+25deg.C,Vds=12.5V, Idq=0.5A Ta=+25deg.C,Vds=12.5V, Idq=0.5A 60 0 IRL, INPUT RETURN LOSS (dB) Pout , OUTPUT POWER(W) 490MHz 50 40 450MHz 30 530MHz 20 10 0 450MHz -5 -15 530MHz -20 -25 -30 0 1 2 3 4 Pin, INPUT POWER(W) 5 6 0 Gain versus Output Power 10 20 30 40 50 Pout, OUTPUT POWER(W) 60 Drain Efficiency versus Output Power Ta=+25deg.C,Vds=12.5V, Idq=0.5A Ta=+25deg.C,Vds=12.5V, Idq=0.5A 15 70 14 60 η, DRAIN EFFICIENCY(%) Gp, POWER GAIN(dB) 490MHz -10 490MHz 13 12 450MHz 11 530MHz 10 530MHz 50 490MHz 40 450MHz 30 20 10 9 0 0 10 20 30 40 50 Pout, OUTPUT POWER(W) 60 0 Publication Date : May 2011 10 10 20 30 40 50 Pout, OUTPUT POWER(W) 60 < Silicon RF Power Semiconductors > RD35HUF2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 35W UHF-band, 450 - 530MHz, TYPICAL CHARACTERISTICS (These are only typical curves and devices are not necessarily guaranteed at these curves.) Output Power versus Biasing Current Drain Efficiency versus Biasing Current Pin=3W Ta=+25deg.C,Vds=12.5V Pin=3W Ta=+25deg.C,Vds=12.5V 80 490MHz η, DRAIN EFFICIENCY (%) Pout , OUTPUT POWER(W) 50 45 40 450MHz 530MHz 35 30 200 400 600 800 1000 1200 IDQ, BIASING CURRENT(mA) 70 60 450MHz 50 40 200 1400 Output Power versus Supply Voltage 490MHz 400 600 800 1000 1200 IDQ, BIASING CURRENT(mA) 1400 Drain Efficiency versus Supply Voltage Pin=3W Ta=+25deg.C, Idq=0.5A Pin=3W Ta=+25deg.C, Idq=0.5A 70 80 60 η, DRAIN EFFICIENCY(%) Pout , OUTPUT POWER(W) 530MHz 490MHz 50 40 30 450MHz 530MHz 20 10 70 530MHz 60 450MHz 490MHz 50 40 10 11 12 13 14 VDD, SUPPLY VOLTAGE(V) 15 10 Publication Date : May 2011 11 11 12 13 14 VDD, SUPPLY VOLTAGE(V) 15 < Silicon RF Power Semiconductors > RD35HUF2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 35W EQUIVALENT CIRCUITRY for VHF EVALUATION BOARD (f=135 - 175MHz) RD35HUF2 Gate Bias C9 Source Electrode3 C8 Drain Bias Source Electrode1 C30 C31 C32 W=2.0 L=5.0 L5 L6 RFOUT R1 C10 RF IN C1 ML2 W=2.0 L=11.0 W=2.0 L=4.0 ML2 L1 W=2.0 L=10.0 ML2 W=2.0 L=18.0 L2 L3 C2 C3 C4 VIA ML2 W=2.2 L=3.0 ML1 W=4.0 L=3.0 ML1 VIA R2 W=4.0 L=5.0 R3 ML1 W=4.6 L=5.3 ML1 W=3.6 L=2.9 ML1 W=1.2 L=15.0 ML1 W=1.8 L=15.0 ML1 VIA W=1.2 L=20.0 VIA ML2 L4 ML2 W=2.0 L=9.0 C29 ML2 W=2.0 L=16.0 ML2 VIA C11 C12 C5 C6 C7 C14 C13 Source Electrode4 C16 C18 C15 C 17 C19 C21 C 20 C23 C22 C25 C26 C27 C28 C24 Source Electrode2 Board material: Glass Epoxy Substrate-er=4.8, TanD=0.018 @1GHz Micro Strip Line Substrate Thickness: ML1, T=0.2 ML2, T=1.1 VIA Hole Dimensions, Diameter=0.8 Length=1.6 UNIT: W/L/T, mm C1 C2, C3 C4 C5, C6, C7 C8, C9 C10, C11 L1 L2, L3 R1 R2, R3 470 22 12 68 1000 100 17 10 2200 16 pF pF pF pF pF pF nH nH ohm ohm 3.2*1.6 1.6*0.8 1.6*0.8 1.6*0.8 2.0*1.2 1.6*0.8 1.6*0.8 1.6*0.8 2.0*1.2 Chip Ceramic Capacitors High Q Chip Ceramic Capacitors High Q Chip Ceramic Capacitors High Q Chip Ceramic Capacitors Chip Ceramic Capacitors High Q Chip Ceramic Capacitors 4Turn Rolling Coil chip Inductors chip Resistors chip Resistors C12, C13, C14, C15,C16 C17, C18, C19, C20 C21, C22, C23, C24, C25 C26 C27 C28 C29 C30, C31 C32 L4 L5 L6 15 47 22 18 15 24 470 1000 220 8 12 25 pF pF pF pF pF pF pF pF uF nH nH nH 2.0*1.2 2.0*1.2 2.0*1.2 2.0*1.2 2.0*1.2 2.0*1.2 3.2*1.6 2.0*1.2 - High Q Chip Ceramic Capacitors High Q Chip Ceramic Capacitors High Q Chip Ceramic Capacitors High Q Chip Ceramic Capacitors High Q Chip Ceramic Capacitors High Q Chip Ceramic Capacitors Chip Ceramic Capacitors Chip Ceramic Capacitors 35V, Electrolytic Capacitor 2Turn Rolling Coil 3Turn Rolling Coil 5Turn Rolling Coil For more information regarding this evaluation board, refer to APPLICATION NOTE “AN-VHF-048” Publication Date : May 2011 12 < Silicon RF Power Semiconductors > RD35HUF2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 35W EQUIVALENT CIRCUITRY for UHF EVALUATION BOARD (f=380 - 430MHz) Gate Bias Source Electrode3 C8 RF IN C1 ML2 W=2.0 L=11.0 Drain Bias RD35HUF2 W=2.0 L=14.0 ML2 R1 C7 C18 C19 C20 W=3.6 W=1.8 L=2.9 L=4.5 C5 VIA ML2 VIA C3 L11 L1 W=0.8 L=18.0 C2 Source Electrode1 C10 C4 ML1 ML1 ML1 W=4.0 W=2.2 L=11.5 L=3.0 C6 ML1 W=1.2 L=15.0 ML1 W=4.6 L=5.3 L10 VIA VIA ML2 C12 C13 W=6.6 L=4.8 ML2 C14 RFOUT C17 ML2 W=1.2 L=20.0 VIA C11 L2 Source Electrode4 Characteristic impidance 50ohm ML1 C15 W=2.0 L=14.0 ML2 W=2.0 L=16.0 C16 Characteristic impidance 50ohm Source Electrode2 Board material: Glass Epoxy Substrate-er=4.8, TanD=0.018 @1GHz Micro Strip Line Substrate Thickness: ML1, T=0.2 ML2, T=1.1 VIA Hole Dimensions, Diameter=0.8 Length=1.6 UNIT: W/L/T, mm C1 330 pF 3.2*1.6 C2 6 pF 1.6*0.8 C3 27 pF 1.6*0.8 C4 9 pF 1.6*0.8 C5, C6 18 pF 1.6*0.8 C7, C8 1000 pF 2.0*1.2 R1 2.2 kohm 1.6*0.8 L1, L2 2.2 nH 1.6*0.8 C10 33 pF C11 33 pF C12 18 pF C13 18 pF C14 5 pF C15 1.2 pF C16 9 pF C17 100 pF C18, C19 1000 pF C20 220 uF L10 8 nH L11 17 nH 2.0*1.2 2.0*1.2 2.0*1.2 2.0*1.2 2.0*1.2 2.0*1.2 2.0*1.2 3.2*2.5 2.0*1.2 - Chip Ceramic Capacitors High Q Chip Ceramic High Q Chip Ceramic High Q Chip Ceramic High Q Chip Ceramic Chip Ceramic Capacitors Chip Inductors High Q Chip Ceramic High Q Chip Ceramic High Q Chip Ceramic High Q Chip Ceramic High Q Chip Ceramic High Q Chip Ceramic High Q Chip Ceramic High Q Chip Ceramic Chip Ceramic Capacitors 35V, Electrolytic Capacitor 2Turn Rolling Coil 4Turn Rolling Coil For more information regarding this evaluation board, refer to APPLICATION NOTE “AN-UHF-127” Publication Date : May 2011 13 < Silicon RF Power Semiconductors > RD35HUF2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 35W EQUIVALENT CIRCUITRY for UHF EVALUATION BOARD (f=450 - 530MHz) Gate Bias Source Electrode3 C8 RF IN L1 ML1 C3 C4 ML1 W=4.6 L=5.3 ML1 W=2.2 L=3.0 W=4.0 L=11.5 ML1 ML1 W=1.2 L=15.0 ML1 VIA W=1.2 L=20.0 VIA ML2 VIA C11 C12 C13 C14 C15 C17 ML2 W=6.6 L=4.8 ML2 W=2.0 L=14.0 ML2 W=2.0 L=16.0 C16 C6 Source Electrode4 Characteristic impidance 50ohm C18 C19 C20 RFOUT VIA VIA C2 C10 W=3.6 W=1.8 L=2.9 L=4.5 ML2 ML2 W=2.0 L=14.0 Source Electrode1 C5 R1 C7 W=0.8 L=18.0 C1 ML2 W=2.0 L=11.0 Drain Bias RD35HUF2 Characteristic impidance 50ohm Source Electrode2 Board material: Glass Epoxy Substrate-er=4.8, TanD=0.018 @1GHz Micro Strip Line Substrate Thickness: ML1, T=0.2 ML2, T=1.1 VIA Hole Dimensions, Diameter=0.8 Length=1.6 UNIT: W/L/T, mm C1 330 pF C2 6.2 pF C3 18 pF C4 9 pF C5, C6 18 pF C7, C8 1000 pF R1 2.2 kohm C10 33 pF C11 33 pF C12 2.4 pF C13 12 pF C14 3.3 pF C15 5.1 pF C16 9.1 pF C17 100 pF C18, C19 1000 pF C20 220 uF L1 29 nH 3.2*1.6 1.6*0.8 1.6*0.8 1.6*0.8 1.6*0.8 2.0*1.2 1.6*0.8 Chip Ceramic Capacitors High Q Chip Ceramic High Q Chip Ceramic High Q Chip Ceramic High Q Chip Ceramic Chip Ceramic Capacitors 2.0*1.2 2.0*1.2 2.0*1.2 2.0*1.2 2.0*1.2 2.0*1.2 2.0*1.2 3.2*2.5 2.0*1.2 - High Q Chip Ceramic High Q Chip Ceramic High Q Chip Ceramic High Q Chip Ceramic High Q Chip Ceramic High Q Chip Ceramic High Q Chip Ceramic High Q Chip Ceramic Chip Ceramic Capacitors 35V, Electrolytic Capacitor 6Turn Rolling Coil For more information regarding this evaluation board, refer to APPLICATION NOTE “AN-UHF-112” Publication Date : May 2011 14 < Silicon RF Power Semiconductors > RD35HUF2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 35W Input / Output Impedance VS. Frequency Characteristics @Pin=3W, Vds=12.5V, Idq=0.5A f=175MHz f=155MHz f=135MHz f Zout* (MHz) (ohm) 135 1.77-j0.80 155 1.83-j0.59 175 1.38-j0.07 Zout*: Complex conjugate of output impedance Zo=10ohm Zout* ( f=135, 155, 175MHz) Zin* ( f=135, 155, 175MHz) Zo=10ohm @Pin=3W, Vds=12.5V, Idq= 0.5A f Zin* (MHz) (ohm) 135 6.64+j0.83 155 6.43+j0.57 175 3.84+j2.13 Zin*: Complex conjugate of input impedance f=175MHz f=155MHz Publication Date : May 2011 15 f=135MHz < Silicon RF Power Semiconductors > RD35HUF2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 35W Input / Output Impedance VS. Frequency Characteristics f=430MHz f=405MHz f=380MHz @Pin=3W, Vds=12.5V, Idq=0.5A f Zout* (MHz) (ohm) 380 1.44-j0.41 405 1.43-j0.30 430 1.30-j0.19 Zout*: Complex conjugate of output impedance Zo=10ohm Zout* ( f=380, 405, 430MHz) Zin* ( f=380, 405, 430MHz) Zo=10ohm @Pin=3W, Vds=12.5V, Idq= 0.5A f Zin* (MHz) (ohm) 380 1.34+j0.00 405 1.43+j0.58 430 1.52+j1.11 Zin*: Complex conjugate of input impedance f=430MHz f=405MHz f=380MHz Publication Date : May 2011 16 < Silicon RF Power Semiconductors > RD35HUF2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 35W Input / Output Impedance VS. Frequency Characteristics Zout* ( f=450, 490, 530MHz) Zo=10ohm @Pin=3W, Vds=12.5V, Idq=0.5A f Zout* (MHz) (ohm) 450 1.59+j0.69 490 1.57+j0.91 530 1.14+j1.24 Zout*: Complex conjugate of output impedance f=530MHz f=490MHz f=450MHz Zin* ( f=450, 490, 530MHz) Zo=10ohm @Pin=3W, Vds=12.5V, Idq= 0.5A f Zin* (MHz) (ohm) 450 1.79+j0.77 490 1.99+j1.38 530 2.06-j1.69 f=530MHz Zin*: Complex conjugate of input impedance f=490MHz f=450MHz Publication Date : May 2011 17 < Silicon RF Power Semiconductors > RD35HUF2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 35W Small Signal Parameter of RD35HUF2 Bias Condition: Vds=12.5V, Idq=0.5A Freq S11 S21 S12 S22 [MHz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang) 100 0.884 -173.6 4.946 71.4 0.010 -15.3 0.829 -173.1 135 0.896 -174.0 3.449 64.9 0.009 -20.1 0.848 -173.1 150 0.903 -174.2 3.020 62.5 0.009 -20.8 0.858 -173.0 175 0.911 -174.5 2.471 58.7 0.008 -23.1 0.872 -173.2 200 0.920 -174.7 2.059 55.1 0.008 -25.0 0.885 -173.4 250 0.933 -175.3 1.473 49.7 0.006 -27.6 0.906 -173.9 300 0.946 -175.8 1.109 45.1 0.005 -27.3 0.922 -174.5 350 0.954 -176.4 0.857 41.9 0.004 -24.3 0.935 -175.0 400 0.958 -177.0 0.687 39.9 0.003 -19.0 0.947 -175.7 450 0.964 -177.5 0.552 37.6 0.003 -8.6 0.954 -176.3 500 0.968 -178.0 0.458 35.5 0.002 8.3 0.960 -177.0 530 0.970 -178.3 0.409 36.4 0.002 20.0 0.965 -177.2 550 0.971 -178.5 0.393 35.9 0.002 32.5 0.966 -177.4 600 0.970 -179.4 0.350 35.5 0.002 54.8 0.966 -178.2 650 0.971 -179.9 0.299 33.7 0.002 72.1 0.968 -178.8 700 0.974 179.4 0.268 34.1 0.003 84.6 0.971 -179.4 750 0.976 178.8 0.240 34.6 0.004 92.8 0.974 179.9 800 0.977 178.1 0.209 34.8 0.004 97.7 0.979 179.2 850 0.975 177.3 0.191 34.0 0.005 102.0 0.978 177.9 900 0.976 176.6 0.179 36.2 0.006 104.0 0.980 177.1 950 0.977 175.7 0.162 35.9 0.006 106.7 0.981 176.4 1000 0.978 174.7 0.152 36.8 0.007 107.9 0.984 175.6 1050 0.979 173.7 0.141 37.1 0.008 110.6 0.986 174.7 1100 0.979 172.7 0.132 39.1 0.009 110.5 0.985 173.7 Publication Date : May 2011 18 < Silicon RF Power Semiconductors > RD35HUF2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 35W ATTENTION: 1.High Temperature ; This product might have a heat generation while operation,Please take notice that have a possibility to receive a burn to touch the operating product directly or touch the product until cold after switch off. At the near the product,do not place the combustible material that have possibilities to arise the fire. 2.Generation of High Frequency Power ; This product generate a high frequency power. Please take notice that do not leakage the unnecessary electric wave and use this products without cause damage for human and property per normal operation. 3.Before use; Before use the product,Please design the equipment in consideration of the risk for human and electric wave obstacle for equipment. PRECAUTIONS FOR THE USE OF MITSUBISHI SILICON RF POWER DEVICES: 1. The specifications of mention are not guarantee values in this data sheet. Please confirm additional details regarding operation of these products from the formal specification sheet. For copies of the formal specification sheets, please contact one of our sales offices. 2. RD series products (RF power transistors) are designed for consumer mobile communication terminals and were not specifically designed for use in other applications. In particular, while these products are highly reliable for their designed purpose, they are not manufactured under a quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed necessary for critical communications elements. Examples of critical communications elements would include transmitters for base station applications and fixed station applications that operate with long term continuous transmission and a higher on-off frequency during transmitting, especially for systems that may have a high impact to society. 3. RD series products use MOSFET semiconductor technology. They are sensitive to ESD voltage therefore appropriate ESD precautions are required. 4. In the case of use in below than recommended frequency, there is possibility to occur that the device is deteriorated or destroyed due to the RF-swing exceed the breakdown voltage. 5. In order to maximize reliability of the equipment, it is better to keep the devices temperature low. It is recommended to utilize a sufficient sized heat-sink in conjunction with other cooling methods as needed (fan, etc.) to keep the channel temperature for RD series products lower than 120deg/C(in case of Tchmax=150deg/C) ,140deg/C(in case of Tchmax=175deg/C) under standard conditions. 6. Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. These results causes in fire or injury. 7. For specific precautions regarding assembly of these products into the equipment, please refer to the supplementary items in the specification sheet. 8. Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in any way from it’s original form. 9. For additional “Safety first” in your circuit design and notes regarding the materials, please refer the last page of this data sheet. 10. Please refer to the additional precautions in the formal specification sheet. Publication Date : May 2011 19 < Silicon RF Power Semiconductors > RD35HUF2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 35W Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. 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Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. •The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or in part these materials. •If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. •Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for further details on these materials or the products contained therein. © 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED. Publication Date : May 2011 20