MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HUF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor,520MHz,30W OUTLINE DESCRIPTION DRAWING 22.0+/-0.3 RD30HUF1 is a MOS FET type transistor specifically designed for UHF RF power amplifiers applications. 18.0+/-0.3 7.2+/-0.5 7.6+/-0.3 4-C1 2 14.0+/-0.4 •High power gain: Pout>30W, Gp>10dB @Vdd=12.5V,f=520MHz •High Efficiency: 55%typ. 6.6+/-0.3 1 FEATURES R1.6 APPLICATION 3.0+/-0.4 0.10 For output stage of high power amplifiers in UHF band mobile radio sets. 2.3+/-0.3 2.8+/-0.3 5.1+/-0.5 3 PIN 1.Drain 2.Source 3.Gate UNIT:mm ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL VDSS VGSS Pch Pin Tj Tstg Rth-c PARAMETER Drain to source voltage Gate to source voltage Channel dissipation Input power Junction temperature Storage temperature Thermal resistance CONDITIONS RATINGS UNIT 30 V +/-20 V Tc=25°C 75 W Zg=Zl=50Ω 7.5 W °C 175 -40 to +175 °C °C/W Junction to case 2.0 Note 1: Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS (Tc=25°C , UNLESS OTHERWISE NOTED) SYMBOL IDSS IGSS VTH Pout ηD1 PARAMETER Zero gate voltage drain current Gate to source leak current Gate threshold voltage Output power Drain efficiency Load VSWR tolerance CONDITIONS VDS=17V, VGS=0V VGS=10V, VDS=0V VDS=12V, IDS=1mA f=520MHz,VDD=12.5V Pin=3.0W,Idq=1.0A VDD=15.2V,Po=30W(PinControl) Idq=1.0A,Zg=50Ω Load VSWR=20:1(All Phase) MIN 1.3 30 50 LIMITS TYP MAX. 200 1 1.8 2.3 35 55 No destroy UNIT uA uA V W % - Note : Above parameters , ratings , limits and conditions are subject to change. RD30HUF1 MITSUBISHI ELECTRIC 1/7 REV.1 14 MAY. 2003 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HUF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor,520MHz,30W TYPICAL CHARACTERISTICS Vgs-Ids CHARACTERISTICS 10 80 8 60 6 Ids(A) CHANNEL DISSIPATION Pch(W) CHANNNEL DISSIPATION VS. AMBIENT TEMPERATURE 100 40 4 2 20 0 0 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta(°C) 0 Vds-Ids CHARACTERISTICS 2 3 Vgs(V) 4 5 140 Vgs=5V Ta=+25°C 120 8 Vgs=4.5V Vgs=4V 4 Vgs=3.5V 2 100 Ciss(pF) 6 60 20 Vgs=2.5V 0 2 4 6 Vds(V) 8 Ta=+25°C f=1MHz 80 40 Vgs=3V 0 1 Vds VS. Ciss CHARACTERISTICS 10 Ids(A) Ta=+25°C Vds=10V 0 0 10 Vds VS. Coss CHARACTERISTICS 5 10 Vds(V) 15 20 Vds VS. Crss CHARACTERISTICS 16 120 Ta=+25°C f=1MHz 100 Ta=+25°C f=1MHz 14 Crss(pF) Coss(pF) 12 80 60 40 10 8 6 4 20 2 0 0 0 RD30HUF1 5 10 Vds(V) 15 20 0 MITSUBISHI ELECTRIC 2/7 5 10 Vds(V) 15 20 REV.1 14 MAY. 2003 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HUF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor,520MHz,30W TYPICAL CHARACTERISTICS Pin-Po CHARACTERISTICS 40 80 ηｄ 60 30 20 100 Po 40 Gp 10 80 ηd 30 60 20 20 10 0 0 Idd 40 Ta=25°C f=520MHz Vdd=12.5V Idq=1.0A ηd(%) Po(dBm) , Gp(dB) , Idd(A) 40 50 100 Po Pout(W) , Idd(A) Ta=+25°C f=520MHz Vdd=12.5V Idq=1.0A ηd(%) 50 Pin-Po CHARACTERISTICS 20 Ｉｄｄ 0 10 20 30 Pin(dBm) 40 0 0 Vdd-Po CHARACTERISTICS Idd 8 8 6 6 4 10 2 2 0 0 0 6 8 10 Vdd(V) 12 8 10 14 +25°C Vds=10V Tc=-25~+75°C -25°C +75°C 4 20 4 RD30HUF1 10 Ids(A) Po(W) 30 Po 10 Idd(A) Ta=25°C f=520MHz Pin=3W Icq=1.0A Zg=ZI=50 ohm 4 6 Pin(W) Vgs-Ids CHARACTERISTICS 2 50 40 2 1.5 MITSUBISHI ELECTRIC 3/7 2.5 3.5 Vgs(V) 4.5 REV.1 14 MAY. 2003 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HUF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor,520MHz,30W EQUIVALENT CIRCUIT(f=520MHz) V gg V dd 9. 1K O H M C1 8. 2k O H M L3 C3 10 0O H M 15 /5p F C2 7/ 5pF L2 L1 R D 30 H U F 1 R F -IN R F -O U T 56 pF 56 pF 15 /15 pF 15 /5/ 7/1 5pF 15 pF 12 8 5 14 5 10 8 12 14 10 0 10 0 C 1: 220 0pF ,10 uF in parallel N ot e:B o ard m a terial-Teflon s u bs t rate C 2: 220 0pF *2 in parallel M ic ro s t rip lin e w id th= 4. 2m m / 50O HM ,e r:2 .7, t= 1.6 m m C 3: 220 0pF ,33 0uF in pa ralle l D im ens ions : m m L1 :3Turn s ,I.D 6 m m ,D 1 .6m m P = 1 s ilver pla tet ed c op per w ire L2 :2Turn s ,I.D 6 m m ,D 1 .6m m P = 1 s ilver pla tet ed c op per w ire L2 :4Turn s ,I.D 6 m m ,D 1 .6m m P = 1 s ilver pla tet ed c op per w ire RD30HUF1 MITSUBISHI ELECTRIC 4/7 REV.1 14 MAY. 2003 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HUF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor,520MHz,30W INPUT/OUTPUT IMPEDANCE VS.FREQUENCY CHARACTERISTICS f=520MHz Zout f=520MHz Zin f=480MHz Zin f=480MHz Zout f=440MHz Zout f=440MHz Zin Zo=10Ω Zin , Zout RD30HUF1 F Zin Zout (MHz) (ohm) (ohm) Conditions 440 1.16-j0.14 1.17+j0.74 Po=40W, Vdd=12.5V,Pin=3.0W 480 0.90+j0.35 1.15+j1.07 Po=38W, Vdd=12.5V,Pin=3.0W 520 0.88+j0.84 1.47+j1.24 Po=35W, Vdd=12.5V,Pin=3.0W MITSUBISHI ELECTRIC 5/7 REV.1 14 MAY. 2003 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HUF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor,520MHz,30W RD30HUF1 S-PARAMETER DATA (@Vdd=12.5V, Id=500mA) Freq. [MHz] 100 150 200 250 300 350 400 450 500 520 550 600 650 700 750 800 850 900 950 1000 1050 1100 RD30HUF1 S11 (mag) 0.870 0.880 0.890 0.902 0.911 0.921 0.930 0.931 0.941 0.946 0.946 0.947 0.951 0.957 0.960 0.962 0.962 0.962 0.961 0.961 0.965 0.964 S21 (ang) -173.4 -177.3 -179.5 178.2 176.0 174.1 172.1 170.0 168.0 167.1 166.3 164.2 162.5 160.7 159.1 157.6 155.8 154.2 152.7 151.2 149.6 148.2 (mag) 0.016 0.015 0.013 0.011 0.010 0.008 0.007 0.005 0.004 0.004 0.004 0.004 0.004 0.006 0.007 0.007 0.009 0.009 0.010 0.012 0.012 0.014 S12 (ang) -8.8 -18.0 -23.7 -27.9 -31.1 -31.3 -29.2 -21.8 -9.5 -3.9 7.5 28.3 46.8 53.0 56.5 63.6 64.1 63.5 65.6 65.3 64.6 64.8 (mag) 7.566 4.825 3.398 2.568 1.982 1.588 1.299 1.070 0.907 0.852 0.780 0.673 0.589 0.522 0.464 0.419 0.383 0.341 0.318 0.296 0.270 0.259 MITSUBISHI ELECTRIC 6/7 S22 (ang) 74.2 63.2 55.1 47.0 40.2 34.5 29.0 23.9 20.3 18.7 15.9 12.5 10.1 6.6 4.1 2.2 -1.2 -3.0 -4.2 -7.4 -8.3 -9.4 (mag) 0.723 0.748 0.778 0.817 0.832 0.857 0.879 0.887 0.901 0.908 0.913 0.916 0.928 0.932 0.936 0.942 0.945 0.946 0.952 0.955 0.955 0.957 (ang) -170.2 -172.5 -173.9 -175.6 -177.6 -179.7 178.3 176.3 174.2 173.4 172.3 170.5 168.6 166.7 164.9 163.1 161.6 160.0 158.2 157.0 155.4 153.6 REV.1 14 MAY. 2003 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD30HUF1 Silicon MOSFET Power Transistor,520MHz,30W Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. RD30HUF1 MITSUBISHI ELECTRIC 7/7 REV.1 14 MAY. 2003