Subassembly Single Phase AC Controller Subassemblies PSW1C75 IRMS = 86 A VRRM= 800-1400 V Preliminary Data Sheet VRSM VDSM (V) 900 1300 1500 VRRM Type VDRM (V) 800 PSW1C 75/08 1200 PSW1C 75/12 1400 PSW1C 75/14 Symbol I RMS ITAVM ITSM Test Conditions TC = 85°C; 50-400Hz (per phase) 86 A TC = 85 °C; 180° sine 39 A TVJ = 45 °C t = 10 ms (50 Hz), sine 1000 A VR = 0 t = 8.3 ms (60 Hz), sine 1100 A (50 Hz), sine 900 A t = 8.3 ms (60 Hz), sine 1000 A TVJ = 45 °C t = 10 ms (50 Hz), sine 5000 A²s VR = 0 t = 8.3 ms (60 Hz), sine 5020 A²s (50 Hz), sine 4050 A²s t = 8.3 ms (60 Hz), sine 4150 A²s 150 A/µs TVJ = 125 °C t = 10 ms ∫ i dt 2 VR = 0 TVJ = 125 °C t = 10 ms VR = 0 (di/dt)cr Maximum Ratings TVJ = 125 °C repetitive, IT = 150 A f=50Hz, tP=200µs VD=2/3VDRM IG=0.45 A non repetitive,IT = ITAVM 500 A/µs diG/dt=0.45A/µs (dv/dt)cr TVJ = 125 °C VD=2/3VDRM 1000 V/µs Features • • • Planar glass passivated chips Low forward voltage drop Leads suitable for PC board soldering Applications • Solid state relays Advantages • • • • Space and weight savings Improved temperature and power cycling capability High power density Small and light weight RGK= ∞, method 1 (linear voltage rise) PGM PGAVM VRGM TVJ TVJM Tstg Weight TVJ = 125 °C tP=30µs ≤ 10 W IT =ITAVM ≤ 5 W 0.5 W 10 V -40... + 125 125 °C °C -40... + 125 9 °C g typ. tP=300µs Data according to IEC 60747 refer to a single thyristor unless otherwise stated 2005 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 Subassembly Symbol Test Conditions Characteristic Value ID,IR VT VTO rT VGT TVJ = 125°C, VR = VRRM, VD=VDRM ≤ IT = 200 A, ≤ 1.55 V 0.85 V 4.0 mΩ TVJ = 25 °C For power-loss calculations only VD=6V 5 mA TVJ= 25°C ≤ 1.5 V TVJ=-40°C ≤ 1.6 V TVJ= 25°C ≤ 100 mA IGT VD=6V TVJ=-40°C ≤ 200 mA VGD IGD IL TVJ= 125°C VD=2/3VDRM ≤ 0.2 V TVJ= 125°C VD=2/3VDRM ≤ 10 mA ≤ 450 mA TVJ= 25°C, VD=6V, RGK= ∞ ≤ 200 mA TVJ= 25°C, VD=1/2VDRM ≤ 2 µs TVJ= TVJM; IT=120A; tp=200µs;-di/dt=10A/µs typ. 150 µs TVJ= 25°C, tP=10µs, VD=6V IG=0.45A, diG/dt=0.45A/µs IH tgd IG=0.45A, diG/dt=0.45A/µs tq VR=100V; dv/dt=20V/µs; VD=2/3VDRM RthJC a per thyristor; DC per module Max. allowable acceleration 0.8 0.4 50 K/W K/W m/s² Package style and outline Dimensions in mm (1mm = 0.0394“) POWERSEM GmbH, Walpersdorfer Str. 53 2005 POWERSEM reserves the right to change limits, test conditions and dimensions D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20