New Product SB1H90 & SB1H100 Vishay General Semiconductor High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • High barrier technology for improved high TJ • Guardring for overvoltage protection • Low power losses and high efficiency • Low forward voltage drop • Very low leakage current • High forward surge capability DO-204AL (DO-41) • High frequency operation • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in middle voltage high frequency inverters, freewheeling, dc-to-dc converters and polarity protection applications. PRIMARY CHARACTERISTICS IF(AV) 1.0 A VRRM 90 V, 100 V IFSM 50 A VF 0.62 V IR 1.0 µA TJ max. 175 °C MECHANICAL DATA Case: DO-204AL (DO-41) Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test, HE3 suffix for high reliability grade (AEC Q101 qualified), meets JESD 201 class 2 whisker test Polarity: Color band denotes the cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL SB1H90 SB1H100 UNIT Maximum repetitive peak reverse voltage VRRM 90 100 V Maximum RMS voltage VRMS 63 70 V Maximum DC blocking voltage VDC 90 Maximum average forward rectified current IF(AV) 1.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 50 A Voltage rate of change (rated VR) dV/dt 10 000 V/µs Peak repetitive reverse surge current at tp = 2.0 µs, 1 kHz IRRM 1.0 A TJ 175 °C TSTG - 55 to + 175 °C Maximum operating junction temperature Storage temperature range Document Number: 88716 Revision: 19-May-08 100 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] V www.vishay.com 1 New Product SB1H90 & SB1H100 Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage (1) IF = 1.0 A IF = 1.0 A IF = 2.0 A IF = 2.0 A Maximum reverse current at rated VR (2) TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C SYMBOL SB1H90 SB1H100 UNIT VF 0.77 0.62 0.86 0.70 V IR 1.0 0.5 µA mA Notes: (1) Pulse test: 300 ms pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL SB1H90 SB1H100 RθJA RθJL Maximum thermal resistance (1) UNIT 57 15 °C/W Note: (1) P.C.B. mounted with 0.2 x 0.2" (5.0 x 5.0 mm) copper pad areas ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE SB1H100-E3/54 0.34 54 5500 13" diameter paper tape and reel SB1H100-E3/73 0.34 73 3000 Ammo pack packaging SB1H100HE3/54 (1) 0.34 54 5500 13" diameter paper tape and reel SB1H100HE3/73 (1) 0.34 73 3000 Ammo pack packaging Note: (1) Automotive grade AEC Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 100 Instantaneous Forward Current (A) Average Forward Current (A) 1.2 1.0 0.8 0.6 0.4 0.2 TJ = 175 °C 10 TJ = 150 °C 1 TJ = 125 °C TJ = 100 °C 0.1 TJ = 25 °C 0.01 0 0 25 50 75 100 125 150 175 200 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Case Temperature (°C) Instantaneous Forward Voltage (V) Figure 1. Forward Current Derating Curve Figure 2. Typical Instantaneous Forward Characteristics www.vishay.com 2 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 88716 Revision: 19-May-08 New Product SB1H90 & SB1H100 Vishay General Semiconductor 100 Transient Thermal Impedance (°C/W) Instantaneous Reverse Current (µA) 10 000 1000 TJ = 150 °C 100 TJ = 125 °C 10 TJ = 100 °C 1 0.1 TJ = 25 °C 40 60 80 1 0.1 0.01 0.01 20 10 100 0.1 1 10 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Figure 3. Typical Reverse Characteristics Figure 5. Typical Transient Thermal Impedance Junction Capacitance (pF) 10 000 1000 100 10 0.1 1 10 100 Reverse Voltage (V) Figure 4. Typical Junction Capacitance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-204AL (DO-41) 1.0 (25.4) MIN. 0.107 (2.7) 0.080 (2.0) DIA. 0.205 (5.2) 0.160 (4.1) 1.0 (25.4) MIN. 0.034 (0.86) 0.028 (0.71) DIA. Document Number: 88716 Revision: 19-May-08 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1