NCP4586 150 mA, Low Noise, Low Dropout Regulator The NCP4586 is a CMOS 150 mA low dropout linear with low noise, high ripple rejection, low dropout, high output voltage accuracy and low supply current. The device is available in three configurations: enable high, enable low and enable high plus auto−discharge. Small packages allow mounting on high density PCBs. This is an excellent general purpose regulator, well suited to many applications. Features • • • • • • • • • Operating Input Voltage Range: 1.7 V to 6.5 V Output Voltage Range: 1.2 to 5.0 V (available in 0.1 V steps) Very Low Dropout: 320 mV Typ. at 150 mA ±1% Output Voltage Accuracy (VOUT > 2 V, TJ = 25°C) High PSRR: 80 dB at 1 kHz Current Fold Back Protection Stable with a 0.47 mF Ceramic Capacitors Available in 1.0 x 1.0 UDFN, SC−82AB and SOT23−5 Package These are Pb−Free Devices http://onsemi.com MARKING DIAGRAMS 1 UDFN4 CASE 517BR XX MM SC−82AB CASE 419C Typical Applications • • • • Battery Powered Equipment Portable Communication Equipment Cameras, MP3 Players and Camcorder High Stability Voltage Reference SOT−23−5 CASE 1212 VIN C1 470 n GND XXX MM VOUT VOUT CE 1 XX, XXX= Specific Product Code MM = Lot Number NCP4586x VIN 1 XX MM ORDERING INFORMATION C2 470 n See detailed ordering and shipping information in the package dimensions section on page 15 of this data sheet. Figure 1. Typical Application Schematic © Semiconductor Components Industries, LLC, 2011 February, 2011 − Rev. 2 1 Publication Order Number: NCP4586/D NCP4586 NCP4586Lxxxxxxxx NCP4586Hxxxxxxxx VIN VOUT VIN Vref VOUT Vref Current Limit CE CE Current Limit GND GND NCP4586Dxxxxxxxx VIN VOUT Vref Current Limit CE GND Figure 2. Simplified Schematic Block Diagram PIN FUNCTION DESCRIPTION Pin No. UDFN4 Pin No. SC82−AB Pin No. SOT23−5 Pin Name 4 4 1 VIN Input pin 2 2 2 GND Ground 3 1 3 CE/CE Chip enable pin (“L” active / “H” active) 1 3 5 VOUT Output pin − − 4 NC Description No connection http://onsemi.com 2 NCP4586 ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit VIN 7 V Output Voltage VOUT −0.3 to VIN + 0.3 V Chip Enable Input VCE −0.3 to 7 V Output Current IOUT 200 mA PD 400 Input Voltage (Note 1) Power Dissipation UDFN4 Power Dissipation SC−82AB 380 Power Dissipation SOT23−5 420 Maximum Junction Temperature mW TJ(MAX) 150 °C TSTG −55 to 125 °C ESD Capability, Human Body Model (Note 2) ESDHBM 2000 V ESD Capability, Machine Model (Note 2) ESDMM 200 V Storage Temperature Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Refer to ELECTRICAL CHARACTERISTIS and APPLICATION INFORMATION for Safe Operating Area. 2. This device series incorporates ESD protection and is tested by the following methods: ESD Human Body Model tested per AEC−Q100−002 (EIA/JESD22−A114) ESD Machine Model tested per AEC−Q100−003 (EIA/JESD22−A115) Latchup Current Maximum Rating tested per JEDEC standard: JESD78. THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal Characteristics, UDFN4 Thermal Resistance, Junction−to−Air RqJA 250 °C/W Thermal Characteristics, SOT23−5 Thermal Resistance, Junction−to−Air RqJA 238 °C/W Thermal Characteristics, SC 82AB Thermal Resistance, Junction−to−Air RqJA 263 °C/W http://onsemi.com 3 NCP4586 ELECTRICAL CHARACTERISTICS −40°C ≤ TA ≤ 85°C; VIN = VOUT(NOM) + 1 V or 2.5 V, whichever is greater; IOUT = 1 mA, CIN = COUT = 0.47 mF, unless otherwise noted. Typical values are at TA = +25 °C. Parameter Test Conditions Max Unit 1.7 6.5 V x0.99 x1.01 V VOUT ≤ 2 V −20 20 mV VOUT > 2 V x0.985 x1.015 V VOUT ≤ 2 V −30 30 mV Operating Input Voltage Output Voltage TA = +25 °C VOUT > 2 V −40°C ≤ TA ≤ 85°C Output Voltage Temp. Coefficient Symbol Min VIN VOUT TA = −40 to 85°C Typ ppm/°C ±20 Line Regulation VIN = VOUT + 0.5 V to 5 V LineReg 0.02 0.10 %/V Load Regulation IOUT = 1 mA to 150 mA LoadReg 10 30 mV VDO 0.67 1.00 V 1.5 V ≤ VOUT < 1.7 V 0.54 0.81 1.7 V ≤ VOUT < 2.0 V 0.46 0.68 2.0 V ≤ VOUT < 2.5 V 0.41 0.60 2.5 V ≤ VOUT < 4.0 V 0.32 0.51 4.0 V ≤ VOUT 0.24 0.37 Dropout Voltage IOUT = 150 mA 1.2 V ≤ VOUT < 1.5 V Output Current IOUT 150 mA Short Current Limit VOUT = 0 V ISC 40 Quiescent Current IOUT = 0 mA IQ 38 58 mA VCE = VIN (L version), VCE = 0 V(H and D version), TA = 25°C ISTB 0.1 1 mA CE / CE Input Voltage “H” VCEH CE / CE Input Voltage “L” VCEL H and D version IPD 0.4 mA VIN = VOUT + 1 V or 3.0 V whichever is higher, IOUT = 30 mA, f = 1 kHz PSRR 80 dB VOUT = 1.2 V, IOUT = 30 mA, f = 10 Hz to 100 kHz VN 30 mVrms D Version only, VIN = 4 V, VCE = 0 V RLOW 30 W Standby Current CE/CE Pin Threshold Voltage CE Pull Down Current Power Supply Rejection Ratio Output Noise Voltage Low Output N−ch Tr. On Resistance http://onsemi.com 4 mA V 1.0 0.4 NCP4586 TYPICAL CHARACTERISTICS 1.4 3.0 1.2 4.2 V 2.0 6.0 V 0.8 VOUT (V) VOUT (V) 1.0 2.5 3.6 V VIN = 2.2 V 6.5 V 0.6 VIN = 6.5 V 3.8 V 1.5 1.0 0.4 0.5 0.2 0.0 4.2 V 6.0 V 0 100 200 300 IOUT (mA) 400 0.0 500 0 Figure 3. Output Voltage vs. Output Current 1.2 V Version (TA = 25 5C) 200 300 IOUT (mA) 400 500 Figure 4. Output Voltage vs. Output Current 2.8 V Version (TA = 25 5C) 6 0.8 0.7 5 0.6 6.0 V 4 VIN = 6.5 V 3 25°C 0.5 VDO (V) VOUT (V) 100 2 85°C 0.4 0.3 −40°C 0.2 1 0 0 0.1 100 200 300 400 0 0 500 100 200 IOUT (mA) 300 400 500 IOUT (mA) Figure 5. Output Voltage vs. Output Current 5.0 V version (TA = 255C) Figure 6. Dropout Voltage vs. Output Current 1.2 V version 0.40 0.30 0.35 0.25 0.20 0.25 25°C 0.20 VDO (V) VDO (V) 0.30 85°C 0.15 0.10 85°C 0.10 −40°C −40°C 0.05 0.05 0.00 0 25°C 0.15 100 200 300 400 500 0.00 0 IOUT (mA) 25 50 75 100 125 150 IOUT (mA) Figure 7. Dropout Voltage vs. Output Current 2.8 V Version Figure 8. Dropout Voltage vs. Output Current 5.0 V Version http://onsemi.com 5 NCP4586 TYPICAL CHARACTERISTICS 2.85 1.25 VIN = 3.8 V 1.23 2.83 1.21 2.81 VOUT (V) VOUT (V) VIN = 2.2 V 1.19 2.79 2.77 1.17 1.15 −40 −20 0 20 40 60 TJ, JUNCTION TEMPERATURE (°C) 2.75 −40 80 Figure 9. Output Voltage vs. Temperature, 1.2 V Version 5.05 45.0 40.0 5.02 35.0 5.01 30.0 IIN (mA) VOUT (V) 50.0 5.03 5.00 4.99 25.0 20.0 4.98 15.0 4.97 10.0 4.96 5.0 4.95 −40 −20 0 20 40 60 TJ, JUNCTION TEMPERATURE (°C) 0.0 80 0 50.0 50.0 45.0 45.0 40.0 40.0 35.0 35.0 30.0 30.0 25.0 20.0 10.0 10.0 5.0 5.0 2 3 VIN (V) 4 5 3 VIN (V) 4 5 6 20.0 15.0 1 2 25.0 15.0 0 1 Figure 12. Supply Current vs. Input Voltage, 1.2 V Version IIN (mA) IIN (mA) Figure 11. Output Voltage vs. Temperature, 5.0 V Version 0.0 80 Figure 10. Output Voltage vs. Temperature, 2.8 V version VIN = 6.0 V 5.04 −20 0 20 40 60 TJ, JUNCTION TEMPERATURE (°C) 0.0 6 0 Figure 14. Supply Current vs. Input Voltage, 2.8 V Version 1 2 3 VIN (V) 4 5 6 Figure 13. Supply Current vs. Input Voltage, 5.0 V version http://onsemi.com 6 NCP4586 TYPICAL CHARACTERISTICS 40.0 40.0 VIN = 2.2 V 38.0 38.0 37.0 37.0 36.0 36.0 35.0 34.0 33.0 32.0 31.0 31.0 −20 0 20 40 60 30.0 −40 80 0 20 40 60 80 TJ, JUNCTION TEMPERATURE (°C) Figure 15. Supply Current vs. Temperature, 1.2 V Version Figure 16. Supply Current vs. Temperature, 2.8 V Version 1.4 VIN = 6.0 V 1.2 43 1.0 1 mA 42 VOUT (V) 41 40 39 38 0.8 0.6 30 mA 0.4 37 IOUT = 50 mA 0.2 36 35 −40 −20 0 20 40 60 0.0 80 1 2 3 4 5 6 VIN (V) Figure 17. Supply Current vs. Temperature, 5.0 V Version Figure 18. Output Voltage vs. Input Voltage, 1.2 V Version 6.0 2.5 5.0 2.0 VOUT (V) 1.5 1.0 2 1 mA 1.0 IOUT = 50 mA 1 3.0 2.0 30 mA 0.5 7 4.0 1 mA 0 0 TJ, JUNCTION TEMPERATURE (°C) 3.0 0.0 −20 TJ, JUNCTION TEMPERATURE (°C) 45 IIN (mA) 34.0 32.0 44 VOUT (V) 35.0 33.0 30.0 −40 VIN = 3.8 V 39.0 IIN (mA) IIN (mA) 39.0 3 4 VIN (V) 5 6 0.0 7 30 mA IOUT = 50 mA 0 Figure 19. Output Voltage vs. Input Voltage, 2.8 V Version 1 2 3 4 VIN (V) 5 6 Figure 20. Output Voltage vs. Input Voltage, 5.0 V Version http://onsemi.com 7 7 NCP4586 TYPICAL CHARACTERISTICS 100 100 1 mA 90 80 PSRR (dB) 50 40 50 40 30 20 20 10 10 0.1 1 10 FREQUENCY (kHz) 100 IOUT = 150 mA 60 30 0 0.01 30 mA 70 IOUT = 150 mA 60 1 mA 80 30 mA 70 PSRR (dB) 90 0 0.01 1000 Figure 21. PSRR, 1.2 V Version 100 1000 1.6 90 1.4 80 1.2 1 mA 70 30 mA IOUT = 150 mA 60 50 VN (mVrms/√Hz) PSRR (dB) 1 10 FREQUENCY (kHz) Figure 22. PSRR, 2.8 V Version 100 40 30 1.0 0.8 0.6 0.4 20 0.2 10 0 0.01 0.1 1 10 FREQUENCY (kHz) 100 0 0.01 1000 Figure 23. PSRR, 5.0 V Version 0.1 1 10 FREQUENCY (kHz) 100 1000 Figure 24. Output Voltage Noise, 1.2 V Version 7.0 7.0 6.0 6.0 5.0 5.0 VN (mVrms/√Hz) VN (mVrms/√Hz) 0.1 4.0 3.0 2.0 1.0 4.0 3.0 2.0 1.0 0 0.01 0.1 1 10 FREQUENCY (kHz) 100 0 0.01 1000 Figure 25. Output Voltage Noise, 2.8 V Version 0.1 1 10 FREQUENCY (kHz) 100 1000 Figure 26. Output Voltage Noise, 5.0 V Version http://onsemi.com 8 NCP4586 TYPICAL CHARACTERISTICS 4 3 1 VIN (V) VOUT (V) 2 1.205 1.200 1.195 1.190 0 10 20 30 40 50 t (ms) 60 70 80 90 100 Figure 27. Line Transients, 1.2 V Version, tR = tF = 5 ms, IOUT = 30 mA 6 5 3 VIN (V) VOUT (V) 4 2.805 2.800 2.795 2.790 0 10 20 30 40 50 t (ms) 60 70 80 90 100 Figure 28. Line Transients, 2.8 V Version, tR = tF = 5 ms, IOUT = 30 mA 7 6 4 VIN (V) VOUT (V) 5 5.005 5.000 4.995 4.990 0 10 20 30 40 50 t (ms) 60 70 80 90 Figure 29. Line Transients, 5.0 V Version, tR = tF = 5 ms, IOUT = 30 mA http://onsemi.com 9 100 NCP4586 TYPICAL CHARACTERISTICS 200 150 100 0 1.23 1.22 1.21 1.20 1.19 1.18 0 10 20 30 40 50 t (ms) 60 70 80 90 IOUT (mA) VOUT (V) 50 100 Figure 30. Load Transients, 1.2 V Version, IOUT = 50 − 100 mA, tR = tF = 0.5 ms, VIN = 2.2 V 200 150 100 0 2.83 2.82 2.81 2.80 2.79 2.78 0 10 20 30 40 50 60 70 80 90 IOUT (mA) VOUT (V) 50 100 t (ms) Figure 31. Load Transients, 2.8 V Version, IOUT = 50 − 100 mA, tR = tF = 0.5 ms, VIN = 3.8 V 200 150 100 0 5.03 5.02 5.01 4.99 4.98 0 10 20 30 40 50 t (ms) 60 70 80 90 Figure 32. Load Transients, 5.0 V Version, IOUT = 50 − 100 mA, tR = tF = 0.5 ms, VIN = 6.0 V http://onsemi.com 10 100 IOUT (mA) VOUT (V) 50 NCP4586 TYPICAL CHARACTERISTICS 200 150 50 0 1.30 1.25 1.20 1.15 1.10 1.05 0 10 20 30 40 50 60 t (ms) 70 80 90 IOUT (mA) VOUT (V) 100 100 Figure 33. Load Transients, 1.2 V Version, IOUT = 1 − 150 mA, tR = tF = 0.5 ms, VIN = 2.2 V 200 150 50 0 2.90 2.85 2.80 2.75 2.70 2.65 0 10 20 30 40 50 60 t (ms) 70 80 90 IOUT (mA) VOUT (V) 100 100 Figure 34. Load Transients, 2.8 V Version, IOUT = 1 − 150 mA, tR = tF = 0.5 ms, VIN = 3.8 V 200 150 50 0 5.10 5.05 5.00 4.95 4.90 4.85 0 10 20 30 40 50 60 70 80 90 t (ms) Figure 35. Load Transients, 5.0 V Version, IOUT = 1 − 150 mA, tR = tF = 0.5 ms, VIN = 6.0 V http://onsemi.com 11 100 IOUT (mA) VOUT (V) 100 NCP4586 TYPICAL CHARACTERISTICS 4 3 Chip Enable 2 0 2.0 1.5 IOUT = 150 mA 1.0 IOUT = 1 mA VCE (V) VOUT (V) 1 0.5 0.0 −0.5 0 2 4 6 8 10 12 t (ms) 14 16 18 20 Figure 36. Start−up, 1.2 V Version, VIN = 2.2 V 5 Chip Enable 4 3 1 4 3 2 IOUT = 1 mA 1 VCE (V) VOUT (V) 2 IOUT = 150 mA 0 −1 0 2 4 6 8 10 t (ms) 12 14 16 18 20 Figure 37. Start−up, 2.8 V Version, VIN = 3.8 V 10 8 Chip Enable 6 2 8 0 6 4 IOUT = 1 mA 2 IOUT = 150 mA 0 −2 0 5 10 15 20 25 t (ms) 30 35 40 45 Figure 38. Start−up, 5.0 V Version, VIN = 6.0 V http://onsemi.com 12 50 VCE (V) VOUT (V) 4 NCP4586 TYPICAL CHARACTERISTICS 4 3 2 VOUT (V) 0 2.0 1.5 IOUT = 1 mA IOUT = 30 mA 1.0 0.5 0.0 −0.5 VCE (V) 1 Chip Enable IOUT = 150 mA 0 10 20 30 40 50 60 t (ms) 70 80 90 100 Figure 39. Shutdown, 1.2 V Version D, VIN = 2.2 V 5 4 2 Chip Enable 2.0 1 1.5 IOUT = 1 mA IOUT = 30 mA 1.0 0.5 0.0 −0.5 VCE (V) VOUT (V) 3 IOUT = 150 mA 0 10 20 30 40 50 t (ms) 60 70 80 90 100 Figure 40. Shutdown, 2.8 V Version D, VIN = 3.8 V 10 8 6 2 Chip Enable 8 0 6 4 IOUT = 1 mA 2 0 −2 IOUT = 30 mA IOUT = 150 mA 0 10 20 30 40 50 t (ms) 60 70 80 90 Figure 41. Shutdown, 5.0 V version D, VIN = 6.0 V http://onsemi.com 13 100 VCE (V) VOUT (V) 4 NCP4586 APPLICATION INFORMATION A typical application circuit for NCP4586 series is shown in Figure 42. NCP4586x VIN VIN C1 470n VOUT CE GND version of IC. Active high or low versions are available; please see the ordering information table. The Enable pin has an internal pull down current source for versions H and D. If the enable function is not needed connect the CE pin to ground for version L or connect the CE pin to VIN for versions H and D. VOUT C2 470n Output Discharger The D version includes a transistor between VOUT and GND that is used for faster discharging of the output capacitor. This function is activated when the IC goes into disable mode. Thermal Figure 42. Typical Application Schematic As power across the IC increases, it might become necessary to provide some thermal relief. The maximum power dissipation supported by the device is dependent upon board design and layout. Mounting pad configuration on the PCB, the board material, and also the ambient temperature affect the rate of temperature rise for the part. That is to say, when the device has good thermal conductivity through the PCB, the junction temperature will be relatively low with high power dissipation applications. Input Decoupling Capacitor (C1) A 470 nF ceramic input decoupling capacitor should be connected as close as possible to the input and ground pin of the NCP4586. Higher values and lower ESR improves line transient response. Output Decoupling Capacitor (C2) A 470 nF or larger ceramic output decoupling capacitor is sufficient to achieve stable operation of the IC. If a tantalum capacitor is used, and its ESR is high, loop oscillation may result. The capacitors should be connected as close as possible to the output and ground pins. Larger values and lower ESR improves dynamic parameters. PCB Layout Make VIN and GND line sufficient. If their impedance is high, noise pickup or unstable operation may result. Connect capacitors C1 and C2 as close as possible to the IC, and make wiring as short as possible. Enable Operation The Enable pin CE or CE may be used for turning the regulator on and off. Control polarity is dependent on http://onsemi.com 14 NCP4586 ORDERING INFORMATION Device Nominal Output Voltage Description Marking Package Shipping† NCP4586DSQ12T1G 1.2 V Enable High, Auto discharge LA SC82AB (Pb−Free) 3000 / Tape & Reel NCP4586DSQ18T1G 1.8 V Enable High, Auto discharge LG SC82AB (Pb−Free) 3000 / Tape & Reel NCP4586DSQ28T1G 2.8 V Enable High, Auto discharge MH SC82AB (Pb−Free) 3000 / Tape & Reel NCP4586DSQ30T1G 3.0 V Enable High, Auto discharge NA SC82AB (Pb−Free) 3000 / Tape & Reel NCP4586DSQ33T1G 3.3 V Enable High, Auto discharge ND SC82AB (Pb−Free) 3000 / Tape & Reel NCP4586DSQ50T1G 5.0 V Enable High, Auto discharge QA SC82AB (Pb−Free) 3000 / Tape & Reel NCP4586DMU12TCG 1.2 V Enable High, Auto discharge VA UDFN4 (Pb−Free) 10000 / Tape & Reel NCP4586DMU14TCG 1.4 V Enable High, Auto discharge VC UDFN4 (Pb−Free) 10000 / Tape & Reel NCP4586DMU15TCG 1.5 V Enable High, Auto discharge VD UDFN4 (Pb−Free) 10000 / Tape & Reel NCP4586DMU18TCG 1.8 V Enable High, Auto discharge VG UDFN4 (Pb−Free) 10000 / Tape & Reel NCP4586DMU25TCG 2.5 V Enable High, Auto discharge VQ UDFN4 (Pb−Free) 10000 / Tape & Reel NCP4586DMU28TCG 2.8 V Enable High, Auto discharge VT UDFN4 (Pb−Free) 10000 / Tape & Reel NCP4586DMU30TCG 3.0 V Enable High, Auto discharge VW UDFN4 (Pb−Free) 10000 / Tape & Reel NCP4586DMU50TCG 5.0 V Enable High, Auto discharge WS UDFN4 (Pb−Free) 10000 / Tape & Reel NCP4586DSN30T1G 3.0 V Enable High, Auto discharge H2W SOT−23−5 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. NOTE: To order other package and voltage variants, please contact your ON Semiconductor sales representative. http://onsemi.com 15 NCP4586 PACKAGE DIMENSIONS UDFN4 1.0x1.0, 0.65P CASE 517BR−01 ISSUE O PIN ONE REFERENCE 2X 0.05 C 4X A B D ÉÉ ÉÉ typ DETAIL A 0.05 C 2X c 0.18 L2 E NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.20 mm FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. L3 3X TOP VIEW 0.43 4X 0.23 (A3) 0.05 C A 3X 0.05 C NOTE 4 A1 SIDE VIEW e DETAIL A 3X 2 0.10 DETAIL B MILLIMETERS MIN MAX −−− 0.60 0.00 0.05 0.10 REF 0.20 0.30 1.00 BSC 0.43 0.53 1.00 BSC 0.65 BSC 0.20 0.30 0.27 0.37 0.02 0.12 RECOMMENDED MOUNTING FOOTPRINT* e/2 1 C SEATING PLANE DIM A A1 A3 b D D2 E e L L2 L3 L 0.65 PITCH DETAIL B D2 45 5 D2 4 3 0.52 1.30 4X BOTTOM VIEW 2X PACKAGE OUTLINE b 0.05 M C A B NOTE 3 0.53 4X 0.30 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 16 NCP4586 PACKAGE DIMENSIONS SC−82AB CASE 419C−02 ISSUE E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. 419C−01 OBSOLETE. NEW STANDARD IS 419C−02. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. A G C D 3 PL N 4 DIM A B C D F G H J K L N S 3 K B S 1 2 F L H J 0.05 (0.002) MILLIMETERS MIN MAX 1.8 2.2 1.15 1.35 0.8 1.1 0.2 0.4 0.3 0.5 1.1 1.5 0.0 0.1 0.10 0.26 0.1 −−− 0.05 BSC 0.2 REF 1.8 2.4 SOLDERING FOOTPRINT* 1.30 0.0512 0.65 0.026 1.90 0.95 0.075 0.037 0.90 0.035 0.70 0.028 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 17 INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.008 0.016 0.012 0.020 0.043 0.059 0.000 0.004 0.004 0.010 0.004 −−− 0.002 BSC 0.008 REF 0.07 0.09 NCP4586 PACKAGE DIMENSIONS SOT−23 5−LEAD CASE 1212−01 ISSUE A A 5 E 1 L1 A1 4 2 DIM A A1 A2 b c D E E1 e L L1 L 3 5X e A2 0.05 S B D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSIONS: MILLIMETERS. 3. DATUM C IS THE SEATING PLANE. A E1 b 0.10 C M C B S A S C MILLIMETERS MIN MAX --1.45 0.00 0.10 1.00 1.30 0.30 0.50 0.10 0.25 2.70 3.10 2.50 3.10 1.50 1.80 0.95 BSC 0.20 --0.45 0.75 RECOMMENDED SOLDERING FOOTPRINT* 3.30 5X 0.85 5X 0.95 PITCH 0.56 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 http://onsemi.com 18 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NCP4586/D