DIODES FMMTA42

FMMTA42
SOT23 NPN Silicon planar high voltage transistor
Device marking
FMMTA42 - 3E
Complementary types
FMMTA92
Absolute maximum ratings
Parameter
Collector-base voltage
Symbol
VCBO
FMMTA42
300
Unit
V
Collector-emitter voltage
VCEO
300
V
Emitter-base voltage
VEBO
5
V
IC
200
mA
Ptot
330
mW
Tj:Tstg
-55 to +150
°C
Continuous collector current
Power dissipation at Tamb=25°C
Operating and storage temperature range
Electrical characteristics (at Tamb = 25°C).
Parameter
Collector-base breakdown
voltage
Collector-emitter breakdown
voltage
Emitter-base breakdown
voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation
voltage
Base-emitter saturation
voltage
Static forward
current transfer
ratio
Symbol
V(BR)CBO
Min.
300
V(BR)CEO
V(BR)EBO
Unit
V
Conditions
IC=100µA, IE=0
300
V
IC=1mA, IB=0 (*)
6
V
IE=100µA, IC=0
µA
VCB=200V, IE=0
µA
VCB=160V, IE=0
µA
VEB=6V, IC=0
µA
VEB=4V, IC=0
ICBO
Max.
0.1
0.1
IEBO
VCE(sat)
0.5
V
IC=20mA, IB=2mA(*)
VBE(sat)
0.9
V
IC=20mA, IB=2mA(*)
hFE
Transition frequency
fT
Output capacitance
Cobo
25
IC=1mA, VCE=10V(*)
40
IC=10mA, VCE=10V(*)
40
IC=30mA, VCE=10V(*)
50
MHz
6
pF
IC=10mA, VCE=20V
f=20MHz
VCB=20V, f=1MHz
NOTES:
(*) Measured under pulsed conditions. Pulse width ≤ 300µs; duty cycle ≤ 2%.
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FMMTA42
160
fT Transition Frequency (MHz)
hFE Static Forward Current Transfer Ratio
Typical characteristics
140
120
VCE=10V
100
80
60
40
20
0.1
1.0
IC-Collector
10
100
140
VCE=20V
120
100
80
60
40
20
0
0.1
200
Current (mA)
hFE vs IC
fT vs IC
Single Pulse Test at Tamb=25°C
1A
0.3
10ms
IC-Collector Current Amps
VCE (sat) Collector-Emitter Saturation Voltage(Volts)
100
10
1.0
IC-Collector Current (mA)
0.2
IC / IB=10
0.1
0
0.1
1.0
10
100
200
IC-Collector Current (mA)
© Zetex Semiconductors plc 2007
0.1
D.C.
0.01
0.001
1
10
100
1000
VCE-Collector-Emitter Voltage (Volts)
Safe operating area
VCE(sat) vs IC
Issue 6 - December 2007
1ms
100ms
2
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FMMTA42
Intentionally left blank
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FMMTA42
Definitions
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The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for
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1. are intended to implant into the body
or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
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Product status key:
“Preview”
Future device intended for production at some point. Samples may be available
“Active”
Product status recommended for new designs
“Last time buy (LTB)”
Device will be discontinued and last time buy period and delivery is in effect
“Not recommended for new designs” Device is still in production to support existing designs and production
“Obsolete”
Production has been discontinued
Datasheet status key:
“Draft version”
This term denotes a very early datasheet version and contains highly provisional information, which
may change in any manner without notice.
“Provisional version”
This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance.
However, changes to the test conditions and specifications may occur, at any time and without notice.
“Issue”
This term denotes an issued datasheet containing finalized specifications. However, changes to
specifications may occur, at any time and without notice.
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© 2007 Published by Zetex Semiconductors plc
Issue 6 - December 2007
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