FMMTA42 SOT23 NPN Silicon planar high voltage transistor Device marking FMMTA42 - 3E Complementary types FMMTA92 Absolute maximum ratings Parameter Collector-base voltage Symbol VCBO FMMTA42 300 Unit V Collector-emitter voltage VCEO 300 V Emitter-base voltage VEBO 5 V IC 200 mA Ptot 330 mW Tj:Tstg -55 to +150 °C Continuous collector current Power dissipation at Tamb=25°C Operating and storage temperature range Electrical characteristics (at Tamb = 25°C). Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage Base-emitter saturation voltage Static forward current transfer ratio Symbol V(BR)CBO Min. 300 V(BR)CEO V(BR)EBO Unit V Conditions IC=100µA, IE=0 300 V IC=1mA, IB=0 (*) 6 V IE=100µA, IC=0 µA VCB=200V, IE=0 µA VCB=160V, IE=0 µA VEB=6V, IC=0 µA VEB=4V, IC=0 ICBO Max. 0.1 0.1 IEBO VCE(sat) 0.5 V IC=20mA, IB=2mA(*) VBE(sat) 0.9 V IC=20mA, IB=2mA(*) hFE Transition frequency fT Output capacitance Cobo 25 IC=1mA, VCE=10V(*) 40 IC=10mA, VCE=10V(*) 40 IC=30mA, VCE=10V(*) 50 MHz 6 pF IC=10mA, VCE=20V f=20MHz VCB=20V, f=1MHz NOTES: (*) Measured under pulsed conditions. Pulse width ≤ 300µs; duty cycle ≤ 2%. Issue 6 - December 2007 © Zetex Semiconductors plc 2007 1 www.zetex.com FMMTA42 160 fT Transition Frequency (MHz) hFE Static Forward Current Transfer Ratio Typical characteristics 140 120 VCE=10V 100 80 60 40 20 0.1 1.0 IC-Collector 10 100 140 VCE=20V 120 100 80 60 40 20 0 0.1 200 Current (mA) hFE vs IC fT vs IC Single Pulse Test at Tamb=25°C 1A 0.3 10ms IC-Collector Current Amps VCE (sat) Collector-Emitter Saturation Voltage(Volts) 100 10 1.0 IC-Collector Current (mA) 0.2 IC / IB=10 0.1 0 0.1 1.0 10 100 200 IC-Collector Current (mA) © Zetex Semiconductors plc 2007 0.1 D.C. 0.01 0.001 1 10 100 1000 VCE-Collector-Emitter Voltage (Volts) Safe operating area VCE(sat) vs IC Issue 6 - December 2007 1ms 100ms 2 www.zetex.com FMMTA42 Intentionally left blank Issue 6 - December 2007 © Zetex Semiconductors plc 2007 3 www.zetex.com FMMTA42 Definitions Product change Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for the user’s application and meets with the user’s requirements. No representation or warranty is given and no liability whatsoever is assumed by Zetex with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Zetex does not assume any legal responsibility or will not be held legally liable (whether in contract, tort (including negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract, opportunity or consequential loss in the use of these circuit applications, under any circumstances. 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Samples may be available “Active” Product status recommended for new designs “Last time buy (LTB)” Device will be discontinued and last time buy period and delivery is in effect “Not recommended for new designs” Device is still in production to support existing designs and production “Obsolete” Production has been discontinued Datasheet status key: “Draft version” This term denotes a very early datasheet version and contains highly provisional information, which may change in any manner without notice. “Provisional version” This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance. However, changes to the test conditions and specifications may occur, at any time and without notice. “Issue” This term denotes an issued datasheet containing finalized specifications. However, changes to specifications may occur, at any time and without notice. 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