FMMT591 Medium power PNP transistor in SOT23 Summary BVCEO > -60V BVEBO > -7V IC(cont) = -1A PD = 500mW RCE(sat) = 295m at 1A Complementary part number : FMMT491 Description C Medium power planar PNP bipolar transistor. Features B • VCE(sat) maximum specification reduction • Reverse blocking specification improvement E Applications • MOSFET gate driving • Power switches • Motor control E C B Ordering information Device Reel size (inches) Tape width (mm) Quantity per reel 7 8 3000 FMMT591TA Pinout - top view Device marking 591 Issue 4 - September 2007 © Zetex Semiconductors plc 2007 1 www.zetex.com FMMT591 Absolute maximum ratings Parameter Symbol Limit Unit Collector-base voltage VCBO -80 V Collector-emitter voltage VCEO -60 V Emitter-base voltage VEBO -7 V IC -1 A Peak pulse current ICM -2 A Power dissipation at TA =25°C(a) PD 500 mW 4 mW/°C Tj, Tstg -55 to 150 °C Symbol Value Unit RJA 250 °C/W Continuous collector current(a) Linear derating factor Operating and storage temperature range Thermal resistance Parameter Junction to ambient(a) NOTES: (a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. Issue 4 - September 2007 © Zetex Semiconductors plc 2007 2 www.zetex.com FMMT591 Characteristics Issue 4 - September 2007 © Zetex Semiconductors plc 2007 3 www.zetex.com FMMT591 Electrical characteristics (at Tamb = 25°C unless otherwise stated). Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown BVCBO voltage -80 V IC = -100A Collector-emitter breakdown voltage BVCEO -60 V IC = -10mA (*) Emitter-base breakdown voltage BVEBO -7 V IE = -100A Collector cut-off current ICBO <1 -100 nA VCB = -60V Collector – emitter current ICES cut-off current <1 -100 nA Emitter cut-off current IEBO <1 -100 nA VEB = -5.6V Collector-emitter saturation voltage VCE(sat) -155 -180 mV IC = -0.5A, IB = -50mA(*) -295 -350 mV IC = -1A, IB = -100mA(*) Base-emitter saturation voltage VBE(sat) 965 -1200 mV IC = -1A, IB = -100mA(*) Base-emitter turn-on voltage VBE(on) 830 -1000 mV IC = -1A, VCE = -5V(*) Static forward current transfer ratio hFE Transition frequency fT Output capacitance COBO -8.1 100 220 100 175 80 155 IC = -1A, VCE = -5V 15 40 IC = -2A, VCE = -5V IC = -1mA, VCE = -5V(*) 300 150 10 IC = -500mA, VCE = -5V(*) MHz IC = -50mA, VCE = -10V f = 100MHz pF VCB = -10V, f = 1MHz(*) NOTES: (*) Measured under pulsed conditions. Pulse width 300s; duty cycle 2%. Issue 4 - September 2007 © Zetex Semiconductors plc 2007 4 www.zetex.com FMMT591 Typical characteristics 0.6 +25 ° C 0.5 0.5 0.4 0.4 VCE(sat) -(V) VCE(sat) -(V) 0.6 0.3 IC/IB=10 IC/IB=50 0.2 IC/IB=10 0.3 -55 °C +25 °C +100 °C 0.2 0.1 0.1 0 0 1mA 400 10mA 1A 100mA 10A 10mA 1mA 100mA 1A IC-Collector Current IC-Collector Current VCE(sat) v IC VCE(sat) v IC VCE=5V 10A IC/IB=10 V BE(sat) - (V) +100 °C 300 +25 °C 200 100 -55 °C 0 1mA 1.2 0.6 -55 °C +25 °C +100 °C 0.4 0 10mA 100mA 1A 1mA 10A 10mA 100mA 1A IC-Collector Current IC-Collector Current hFE V IC VBE(sat) v IC 10A 10 VCE=5V 1.0 VBE(on) - (V) 0.8 0.2 I C -Collector Current (A) h FE - Typical Gain 1.0 0.8 0.6 -55 °C +25 °C +100 °C 0.4 0.2 1 0.1 DC 1s 100ms 10ms 1ms 100us 0.01 0 1mA 10mA 100mA 1A 0.1V 10A IC-Collector Current VBE(on) v IC 1V 10V 100V VCE - Collector Emitter Voltage (V) Safe Operating Area VCE(sat) graphs represent MAX limit performance. Issue 4 - September 2007 © Zetex Semiconductors plc 2007 5 www.zetex.com Intentionally left blank Issue 4 - September 2007 © Zetex Semiconductors plc 2007 6 www.zetex.com Package outline - SOT23 E e e1 b 3 leads L1 D E1 A A1 Dim. L c Millimeters Inches Dim. Millimeters Min. Max. Min. Max. A - 1.12 - 0.044 e1 A1 0.01 0.10 0.0004 0.004 E 2.10 2.64 0.083 0.104 b 0.30 0.50 0.012 0.020 E1 1.20 1.40 0.047 0.055 c 0.085 0.20 0.003 0.008 L 0.25 0.60 0.0098 0.0236 D 2.80 3.04 0.110 0.120 L1 0.45 0.62 0.018 0.024 - - - - - e 0.95 NOM Min. 0.037 NOM Max. Inches 1.90 NOM Min. Max. 0.075 NOM Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches Issue 4 - September 2007 © Zetex Semiconductors plc 2007 7 www.zetex.com FMMT591 Definitions Product change Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for the user’s application and meets with the user’s requirements. No representation or warranty is given and no liability whatsoever is assumed by Zetex with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Zetex does not assume any legal responsibility or will not be held legally liable (whether in contract, tort (including negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract, opportunity or consequential loss in the use of these circuit applications, under any circumstances. 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