MMBTH10 VHF/UHF NPN SILICON TRANSISTOR 25 Volts VOLTAGE POWER SOT- 23 225 mW Unit: inch (mm) .119(3.00) .110(2.80) .103(2.60) .047(1.20) .056(1.40) • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA .083(2.10) .066(1.70) Case : SOT-23, Plastic .086(2.20) • NPN Silicon .007(.20)MIN FEATURES .006(.15) .002(.05) .044(1.10) Approx weight : 0.008 gram .006(.15)MAX .020(.50) .013(.35) .035(0.90) Terminals : Solderable per MIL-STD-750, Method 2026 MAXIMUM RATINGS R A T IN G S YM B O L VA L UE U N IT C o lle c to r-E mi tte r Vo lta g e V CEO 25 Vdc C o lle c to r-B a s e Vo lta g e V CBO 30 Vdc E mi tte r-B a s e Vo lta g e V EBO 3 .0 Vdc THERMAL CHARACTERISTICS C H A R A C T E R IS T IC S YM B O L MA X . U N IT S PD 225 1 .8 mW m W / OC RΘJA 556 PD 300 2.4 The r m a l R e s i s t a nc e J unc t i o n t o A m b i e nt (No te 2 ) RΘJA 417 J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e T J , T S TG -55 to +150 To t a l D e v i c e D i s s i p a t i o n F R - 5 B o a r d ( N o t e 1 ) TA = 2 5 OC D e r a t e a b o ve 2 5 OC The r m a l R e s i s t a nc e J unc t i o n t o A m b i e nt (No te 1 ) To t a l D e v i c e D i s s i p a t i o n A l u m i n a S u b s t r a t e ( N o t e 2 ) T A = 2 5 OC D e r a t e a b o ve 2 5 OC O C /W mW m W / OC O C /W O C Note 1. FR-5 = 1.0 x 0.75 x 0.062 in 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina STAD-JUN.30.2006 PAGE . 1 MMBTH10 ELECTRICAL CHARACTERISTICS O (T =25 C , unless otherwise noted) A C H A R A C T E R IS T IC S YM B O L M IN T YP MA X U N IT C o lle c to r-E mi tte r B re a k d o wn Vo lta g e ( IC = 1 . 0 m A d c , IB = 0 ) V ( B R) C E O 25 - - Vdc C o lle c to r-B a s e B re a k d o wn Vo lta g e ( IC = 1 0 0 µ A d c , IE = 0 ) V ( B R) C B O 30 - - Vdc E mi tte r-B a s e B re a k d o wn Vo lta g e ( IE = 1 0 µ A d c , IC = 0 ) V ( B R) E B O 3.0 - - Vdc C o l l e c t o r C ut o f f C ur r e nt ( V C B = 2 5 V d c , IE = 0 ) IC B O - - 100 nA d c E m i t t e r C ut o f f C ur r e nt ( V E B = 2 . 0 V d c , IC = 0 ) IE B O - - 100 nA d c hF E 60 - - - V CE(s a t) - - 0 .5 Vdc V BE - - 0 .9 5 Vdc fT 650 - - MHz C o l l e c t o r - B a s e C a p a c i t a nc e ( V C B = 1 0 V d c , IE = 0 , f = 1 . 0 M H z ) Ccb - - 0 .7 pF C o m m o n- B a s e F e e d b a c k C a p a c i t a nc e ( V C B = 1 0 V d C , IE = 0 , f = 1 . 0 M H z ) C rb - - 0 .6 5 pF C o l l e c t o r - B a s e Ti m e C o n s t a n t ( IC = 4 . 0 m A d c , V C B = 1 0 V d c , f = 3 1 . 8 M H z ) rb'C C - - 9 .0 ps O F F C H A R A C T E R IS T IC S O N C H A R A C T E R IS T IC S D C C u r r e n t G a i n ( IC = 4 . 0 m A d c , V C E = 1 0 V d c ) C o l l e c t o r - E m i t t e r S a t ur a t i o n Vo l t a g e ( IC = 4 . 0 m A d c , IB = 0 . 4 m A d c ) B a s e -E mi tte r On Vo lta g e ( IC = 4 . 0 m A d c , V C E = 1 0 V d c ) S M A L L - S IG N A L C H A R A C T E R IS T IC S C ur r e nt - G a i n- B a nd w i d t h P r o d uc t ( IC = 4 . 0 m A d c , V C E = 1 0 V d c , f = 1 0 0 M H z ) STAD-JUN.30.2006 PAGE . 2 MMBTH10 0 70 gib −10 60 50 jb ib (mmhos) y ib , INPUT ADMITTANCE (mmhos) 80 −b ib 40 30 −20 1000 MHz −30 700 −40 20 400 10 0 200 −50 100 200 300 400 500 f, FREQUENCY (MHz) 700 −60 1000 0 20 10 Figure 1. Rectangular Form 30 40 50 gib (mmhos) 60 100 80 70 Figure 2. Polar Form 70 60 bfb 60 400 200 50 50 600 100 40 700 −g fb 30 jb fb (mmhos) y ib , FORWARD TRANSFER ADMITTANCE (mmhos) yfb, FORWARD TRANSFER ADMITTANCE 20 10 40 30 1000 MHz 0 −10 20 −20 −30 100 200 300 400 500 f, FREQUENCY (MHz) Figure 3. Rectangular Form STAD-JUN.30.2006 700 1000 10 70 60 50 40 10 30 20 gfb (mmhos) 0 −10 −20 −30 Figure 4. Polar Form PAGE . 3 5.0 0 4.0 −1.0 200 −2.0 400 100 MPS H11 3.0 −brb jb rb (mmhos) y rb , REVERSE TRANSFER ADMITTANCE (mmhos) MMBTH10 −brb 2.0 −3.0 700 MPS H10 1.0 −4.0 −grb 0 100 200 300 400 500 f, FREQUENCY (MHz) 700 −5.0 −2.0 −1.8 −1.2 −0.8 1000 Figure 5. Rectangular Form 1000 MHz −0.4 0.4 0 grb (mmhos) 0.8 1.2 1.6 2.0 Figure 6. Polar Form yob, OUTPUT ADMITTANCE 10 1000 MHz 9.0 8.0 8.0 7.0 700 6.0 5.0 jb ob(mmhos) yob, OUTPUT ADMITTANCE (mmhos) 10 bob 4.0 6.0 4.0 400 3.0 200 2.0 gob 1.0 0 2.0 100 200 300 400 500 f, FREQUENCY (MHz) Figure 7. Rectangular Form STAD-JUN.30.2006 100 700 1000 0 0 2.0 4.0 6.0 gob (mmhos) 8.0 10 Figure 8. Polar Form PAGE . 4 MMBTH10 MOUNTING PAD LAYOUT ORDER INFORMATION • Packing information T/R - 12K per 13" plastic Reel T/R - 3K per 7” plastic Reel LEGAL STATEMENT Copyright PanJit International, Inc 2007 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. STAD-DEC.01.2006 PAGE . 5