Transistors 2SC3932 Silicon NPN epitaxial planer type (0.425) Unit: mm For high-frequency amplification / oscillation / mixing 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5° 1.25±0.10 0.9+0.2 –0.1 ■ Features 0.9±0.1 3 1 2 0.2±0.1 • High transition frequency fT • S-mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. (0.65) (0.65) 1.3±0.1 2.0±0.2 10° Parameter Symbol Rating Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 3 V Collector current IC 50 mA Collector power dissipation PC 150 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 0 to 0.1 ■ Absolute Maximum Ratings Ta = 25°C 1: Base 2: Emitter 3: Collector EIAJ: SC-70 S-Mini Type Package Marking Symbol: R ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit Collector to base voltage VCBO IC = 100 µA, IE = 0 30 V Emitter to base voltage VEBO IE = 10 µA, IC = 0 3 V 25 Forward current transfer ratio hFE VCB = 10 V, IE = −2 mA Base to emitter voltage VBE VCB = 10 V, IE = −2 mA 250 720 mV fT VCB = 10 V, IE = −15 mA, f = 200 MHz Common emitter reverse transfer capacitance Cre VCB = 10 V, IE = −1 mA, f = 10.7 MHz Crb VCE= 6 V, IC = 0, f = 1 MHz 0.8 pF Power gain PG VCB = 10 V, IE = −1 mA, f = 200 MHz 20 dB Transition frequency * 800 1 1 600 MHz 1.5 pF Note) *: Rank classification Rank fT (MHz) Marking symbol T S No-rank 800 to 1 400 1 000 to 1 600 800 to 1 600 RT RS R Product of no-rank is not classified and have no indication for rank. 1 2SC3932 Transistors PC Ta IC VCE 200 Ta = 25°C 20 120 80 40 80 120 200 µA 12 8 100 µA 4 50 µA 0 160 150 µA 2 4 6 8 10 12 14 16 18 60 Collector current IC (mA) 250 200 150 100 −25°C Ta = 75°C 30 20 10 1.2 1.6 0 2.0 0 Base to emitter voltage VBE (V) 0.4 0.8 1.6 Transition frequency fT (MHz) 10 1 000 1 Ta = 75°C 25°C 0.1 –25°C 800 600 400 200 0.03 0.3 1 3 10 160 Ta = 75°C 120 25°C −25°C 80 40 0.3 30 Collector current IC (mA) 100 0 − 0.1 − 0.3 −1 −3 1 3 10 30 100 Collector current IC (mA) Cre VCE 1 200 3 500 200 0 0.1 2.0 VCB = 10 V Ta = 25°C 1 400 30 0.01 0.1 1.2 1 600 400 VCE = 10 V fT I E IC / IB = 10 300 240 Base to emitter voltage VBE (V) VCE(sat) IC 100 200 hFE IC 40 50 0.3 100 Base current IB (µA) VCE = 10 V 25°C 50 300 0.8 0 Collector to emitter voltage VCE (V) VCE = 10 V Ta = 25°C 0.4 8 IC VBE 350 0 12 0 0 IB VBE 0 16 4 Forward current transfer ratio hFE 40 16 −10 −30 Emitter current IE (mA) −100 Common emitter reverse transfer capacitance Cre (pF) 0 250 µA Collector current IC (mA) 160 400 Base current IB (µA) VCE = 10 V Ta = 25°C 20 Ambient temperature Ta (°C) Collector to emitter saturation voltage VCE(sat) (V) 24 IB = 300 µA 0 2 IC IB 24 Collector current IC (mA) Collector power dissipation PC (mW) 240 2.4 IC = 1 mA f = 10.7 MHz Ta = 25°C 2.0 1.6 1.2 0.8 0.4 0 0.1 0.3 1 3 10 30 100 Collector to emitter voltage VCE (V) Transistors 2SC3932 Zrb IE PG IE 40 VCB = 10 V f = 2 MHz Ta = 25°C 100 60 40 Noise figure NF (dB) 80 VCB = 10 V f = 100 MHz Rg = 50 Ω Ta = 25°C 10 30 25 20 15 8 6 4 10 2 20 5 0 − 0.1 − 0.2− 0.3 − 0.5 −1 −2 −3 −5 0 − 0.1 − 0.3 −10 bib gib −3 −10 −30 0 − 0.1 − 0.3 −100 600 500 300 200 −40 −50 0 10 20 30 40 50 300 500 600 −1.2 f = 900 MHz −2 mA IE = −5 mA −1.6 −2.0 −2.4 −1.0 − 0.8 − 0.6 − 0.4 − 0.2 0 Reverse transfer conductance grb (mS) Input conductance gib (mS) −30 −100 yfb = gfb + jbfb VCB = 10 V 200 Forward transfer susceptance bfb (mS) f = 900 MHz −5 mA yrb = grb + jbrb VCB = 10 V − 0.8 IE = −2 mA −30 Reverse transfer susceptance brb (mS) −20 −10 bfb gfb − 0.4 −10 −3 48 0 yib = gib + jbib VCB = 10 V −1 Emitter current IE (mA) brb grb 0 −60 −1 Emitter current IE (mA) Emitter current IE (mA) Input susceptance bib (mS) NF IE 12 VCB = 10 V f = 100 MHz Rg = 50 Ω Ta = 25°C 35 Power gain PG (dB) Reverse transfer impedance Zrb (Ω) 120 40 f = 200 MHz IE = −5 mA 32 24 300 −2 mA 500 600 16 900 8 0 −60 −40 −20 0 20 40 Forward transfer conductance gfb (mS) bob gob 12 yob = gob + jbob VCE = 10 V 900 Output susceptance bob (mS) 10 600 8 IE = −2 mA 500 6 4 300 2 0 −5 mA f = 200 MHz 0 0.4 0.8 1.2 1.6 2.0 Output conductance gob (mS) 3