HITTITE HMC224MS8_10

HMC224MS8 / 224MS8E
v02.0805
GaAs MMIC T/R SWITCH
5 - 6 GHz
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Typical Applications
Features
The HMC224MS8 / HMC224MS8E is ideal for:
Low Cost 5-6 GHz Switch
• UNII & HiperLAN
Ultra Small Package: MSOP8
• PCMCIA WirelessLAN
High Input P1dB: +33 dBm
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Single Positive Supply: +3 to +8V
Functional Diagram
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Description
enGeneral
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The HMC224MS8 & HMC224MS8E are low-cost
com
e
R
SPDT switches in 8-lead MSOP packages for use in
t
No
transmit-receive applications. The device can control
signals from 5.0 to 6.0 GHz and is especially suited
for 5.2 GHz UNII and 5.8 GHz ISM applications with
only 1.2 dB loss. The design provides exceptional
power handling performance; input P1dB = +33 dBm
at 5 Volt bias. RF1 and RF2 are reflective shorts
when “Off”. On-chip circuitry allows single positive
supply operation at very low DC current with control
inputs compatible with CMOS and most TTL logic
families. No DC blocking capacitors are required on
RF I/O ports.
SWITCHES - SPDT T/R - SMT
11
Electrical Specifi cations, TA = +25° C, Vdd = +5 Vdc, 50 Ohm System
Parameter
Frequency
Typ.
Max.
Units
1.3
1.2
1.3
1.6
1.5
1.6
dB
dB
dB
Insertion Loss
Isolation
5.0 - 6.0 GHz
5.1 - 5.4 GHz
5.4 - 5.9 GHz
20
26
22
24
31
27
dB
dB
dB
5.0 - 6.0 GHz
5.1 - 5.9 GHz
5.0 - 6.0 GHz
5.1 - 5.9 GHz
11
12
11
11
15
16
14
15
dB
dB
dB
dB
RF Common
Return Loss
RF1 & RF2
Input Power for 1 dB Compression
0/3V Control
0/5V Control
5.0 - 6.0 GHz
5.0 - 6.0 GHz
27
29
31
33
dBm
dBm
Input Third Order Intercept
0/3V Control
0/5V Control
5.0 - 6.0 GHz
5.0 - 6.0 GHz
31
33
35
37
dBm
dBm
10
25
ns
ns
Switching Characteristics
5.0 - 6.0 GHz
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
11 - 2
Min.
5.0 - 6.0 GHz
5.1 - 5.4 GHz
5.4 - 5.9 GHz
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC224MS8 / 224MS8E
v02.0805
GaAs MMIC T/R SWITCH
5 - 6 GHz
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Insertion Loss
0
0
-0.5
-10
-1
ISOLATION (dB)
-1.5
-2
-2.5
-20
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-3
-3.5
-4
-40
4
5
6
7
4
8
5
FREQUENCY (GHz)
6
7
8
FREQUENCY (GHz)
11
Absolute Maximum Ratings
Return Loss
0
Bias Voltage Range (Vdd)
S11 RFC
S22
-5
RETURN LOSS (dB)
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-10
-0.2 to +12 Vdc
Control Voltage Range (A & B)
-0.2 to Vdd Vdc
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
-15
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
-20
-25
-30
4
5
6
7
8
FREQUENCY (GHz)
Truth Table
*Control Input Voltage Tolerances are ± 0.2 Vdc.
Control
Input*
Bias
Bias Current
Control
Current
Control
Current
Signal
Path State
Vdd
(Vdc)
A
(Vdc)
B
(Vdc)
Idd
(uA)
Ia
(uA)
Ib
(uA)
RF to RF1
RF to RF2
3
0
0
10
-5
-5
OFF
OFF
3
0
Vdd
10
-10
0
ON
OFF
3
Vdd
0
10
0
-10
OFF
ON
5
0
0
45
-22
-23
OFF
OFF
5
0
Vdd
45
-5
-40
ON
OFF
5
Vdd
0
115
-40
-5
OFF
ON
SWITCHES - SPDT T/R - SMT
INSERTION LOSS (dB)
Isolation
Caution:
Do not operate in 1dB compression at power levels above +33 dBm and do not “hot switch” power levels greater than +23 dBm
(Vdd = +5Vdc). DC blocks are not required at ports RFC, RF1 and RF2.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11 - 3
HMC224MS8 / 224MS8E
v02.0805
GaAs MMIC T/R SWITCH
5 - 6 GHz
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Outline Drawing
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NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
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2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
SWITCHES - SPDT T/R - SMT
5. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
Package Information
Part Number
Lead Finish
MSL Rating
HMC224MS8
Low Stress Injection Molded Plastic
Sn/Pb Solder
MSL1
HMC224MS8E
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
MSL1
[1]
[2]
Package Marking [3]
H224
XXXX
H224
XXXX
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
Typical Application Circuit
Notes:
1.
2.
3.
4.
5.
6.
11 - 4
Package Body Material
Control Inputs A and B can be driven directly with
CMOS logic (HC) with V of 3 to 8 Volts applied to the CMOS
logic gates and to pin 4 of the RF switch.
Set V to 5 Volts and use HCT series logic to provide a
TTL driver interface.
Highest RF signal power capability is achieved with V set
to +10V. However, the switch will operate properly (but at
lower RF power capability) at bias voltages down to +3V.
RF ByPass: Do not use RF bypass capacitors on Vdd, A
or B ports. Resistors R1, R2, R3 = 100 Ohms should be
placed close to the Vdd, A and B ports. Use resistor size
0402 to minimize parasitic inductances and capacitances.
DC Blocking capacitors are not required for each RF port.
Evaluation PCB available.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC224MS8 / 224MS8E
v02.0805
GaAs MMIC T/R SWITCH
5 - 6 GHz
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Evaluation PCB
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List of Materials for Evaluation PCB 104771 [1]
Item
Description
J1 - J3
PCB Mount SMA RF Connector
J4 - J7
DC Pin
R1, R3
100  resistor, 0402 Pkg.
U1
HMC224MS8 / HMC224MS8E
T/R Switch
PCB [2]
104518 Evaluation PCB
[1] Reference this number when ordering complete evaluation PCB
The circuit board used in the application should
be generated with proper RF circuit design techniques. Signal lines at the RF port should have
50 Ohm impedance and the package ground
leads should be connected directly to the ground
plane similar to that shown above. The evaluation circuit board shown above is available from
Hittite Microwave Corporation upon request.
SWITCHES - SPDT T/R - SMT
11
[2] Circuit Board Material: Rogers 4350
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11 - 5