INFINEON IGW25N120H3

IGBT
High speed IGBT in Trench and Fieldstop technology
recommended in combination with SiC Diode IDH15S120
IGW25N120H3
1200V high speed switching series third generation
Data sheet
Industrial & Multimarket
IGW25N120H3
High speed switching series third generation
High speed IGBT in Trench and Fieldstop technology
recommended in combination with SiC Diode IDH15S120
C
Features:
TRENCHSTOPTM technology offering
• best in class switching performance: less than 500µJ total
switching losses achievable
• very low VCEsat
• low EMI
• maximum junction temperature 175°C
• qualified according to JEDEC for target applications
• Pb-free lead plating; RoHS compliant
• complete product spectrum and PSpice Models:
http://www.infineon.com/igbt/
G
E
Applications:
• solar inverters
• uninterruptible power supplies
• welding converters
• converters with high switching frequency
Key Performance and Package Parameters
Type
IGW25N120H3
V†Š
I†
V†ŠÙÈÚ, TÝÎ=25°C
TÝÎÑÈà
Marking
Package
1200V
25A
2.05V
175°C
G25N120H3
PG-TO247-3
2
Rev. 1.1, 2011-01-25
IGW25N120H3
High speed switching series third generation
Table of Contents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
.3
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
.5
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
3
Rev. 1.1, 2011-01-25
IGW25N120H3
High speed switching series third generation
Maximum ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
V†Š
1200
V
DC collector current, limited by TÝÎÑÈà
T† = 25°C
T† = 100°C
I†
50.0
25.0
A
Pulsed collector current, tÔ limited by TÝÎÑÈà
I†ÔÛÐÙ
100.0
A
Turn off safe operating area V†Š ù 1200V, TÝÎ ù 175°C
-
100.0
A
Gate-emitter voltage
V•Š
±20
V
Short circuit withstand time
V•Š = 15.0V, V†† ù 600V
Allowed number of short circuits < 1000
Time between short circuits: ú 1.0s
TÝÎ = 175°C
tȠ
Power dissipation T† = 25°C
Power dissipation T† = 100°C
PÚÓÚ
326.0
156.0
W
Operating junction temperature
TÝÎ
-40...+175
°C
Storage temperature
TÙÚÃ
-55...+150
°C
µs
10
Soldering temperature,
wave soldering 1.6 mm (0.063 in.) from case for 10s
°C
260
Mounting torque, M3 screw
Maximum of mounting processes: 3
M
0.6
Nm
Thermal Resistance
Parameter
Symbol Conditions
Max. Value
Unit
Characteristic
IGBT thermal resistance,
junction - case
RÚÌñÎ-Êò
0.46
K/W
Thermal resistance
junction - ambient
RÚÌñÎ-Èò
40
K/W
Electrical Characteristic, at TÝÎ = 25°C, unless otherwise specified
Parameter
Symbol Conditions
Value
min.
typ.
max.
1200
-
-
-
2.05
2.50
2.70
2.40
6.5
Unit
Static Characteristic
Collector-emitter breakdown voltage Vñ…çò†Š» V•Š = 0V, I† = 0.50mA
V
Collector-emitter saturation voltage
V†ŠÙÈÚ
V•Š = 15.0V, I† = 25.0A
TÝÎ = 25°C
TÝÎ = 125°C
TÝÎ = 175°C
Gate-emitter threshold voltage
V•ŠñÚÌò
I† = 0.85mA, V†Š = V•Š
5.0
5.8
Zero gate voltage collector current
I†Š»
V†Š = 1200V, V•Š = 0V
TÝÎ = 25°C
TÝÎ = 175°C
-
-
Gate-emitter leakage current
I•Š»
V†Š = 0V, V•Š = 20V
-
-
600
nA
Transconductance
gËÙ
V†Š = 20V, I† = 25.0A
-
13.0
-
S
4
V
V
250.0 µA
2500.0
Rev. 1.1, 2011-01-25
IGW25N120H3
High speed switching series third generation
Electrical Characteristic, at TÝÎ = 25°C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
-
1430
-
-
95
-
-
75
-
-
115.0
-
nC
-
13.0
-
nH
-
A
Dynamic Characteristic
Input capacitance
CÍþÙ
Output capacitance
CÓþÙ
Reverse transfer capacitance
CØþÙ
Gate charge
Q•
V†Š = 25V, V•Š = 0V, f = 1MHz
V†† = 960V, I† = 25.0A,
V•Š = 15V
Internal emitter inductance
LŠ
measured 5mm (0.197 in.) from case
Short circuit collector current
Max. 1000 short circuits
Time between short circuits: ú 1.0s
I†ñ»†ò
V•Š = 15.0V, V†† ù 600V,
t»† ù 10µs
TÝÎ = 175°C
-
pF
87
Switching Characteristic, Inductive Load, at TÝÎ = 25°C
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
-
27
-
ns
-
41
-
ns
-
277
-
ns
-
17
-
ns
-
1.80
-
mJ
-
0.85
-
mJ
-
2.65
-
mJ
-
0.08
-
mJ
-
0.27
-
mJ
-
0.35
-
mJ
IGBT Characteristic
Turn-on delay time
tÁñÓÒò
Rise time
tØ
Turn-off delay time
tÁñÓËËò
Fall time
tË
Turn-on energy
EÓÒ
Turn-off energy
EÓËË
Total switching energy
EÚÙ
Turn-on energy
EÓÒ
Turn-off energy
EÓËË
Total switching energy
EÚÙ
TÝÎ = 25°C,
V†† = 600V, I† = 25.0A,
V•Š = 0.0/15.0V,
r• = 23.0Â, Lÿ = 80nH,
Cÿ = 67pF
Lÿ, Cÿ from Fig. E
Energy losses include “tail” and
diode (IKW25N120H3) reverse
recovery.
TÝÎ = 25°C,
V†† = 800V, I† = 10.0A,
V•Š = 0.0/15.0V,
r• = 3.0Â, Lÿ = 80nH,
Cÿ = 67pF
Lÿ, Cÿ from Fig. E
Energy losses include “tail” and
diode (IDH15S120) reverse
recovery.
5
Rev. 1.1, 2011-01-25
IGW25N120H3
High speed switching series third generation
Switching Characteristic, Inductive Load, at
at Tvj
175°C/ 125°C
TÝÎ == 175°C
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
-
26
-
ns
-
35
-
ns
-
347
-
ns
-
50
-
ns
-
2.60
-
mJ
-
1.70
-
mJ
-
4.30
-
mJ
-
0.10
-
mJ
-
0.62
-
mJ
-
0.72
-
mJ
IGBT Characteristic
Turn-on delay time
tÁñÓÒò
Rise time
tØ
Turn-off delay time
tÁñÓËËò
Fall time
tË
Turn-on energy
EÓÒ
Turn-off energy
EÓËË
Total switching energy
EÚÙ
Turn-on energy
EÓÒ
Turn-off energy
EÓËË
Total switching energy
EÚÙ
TÝÎ = 175°C,
V†† = 600V, I† = 25.0A,
V•Š = 0.0/15.0V,
r• = 23.0Â, Lÿ = 80nH,
Cÿ = 67pF
Lÿ, Cÿ from Fig. E
Energy losses include “tail” and
diode (IKW25N120H3) reverse
recovery.
TÝÎ = 175°C,
125°C
V†† = 800V, I† = 10.0A,
V•Š = 0.0/15.0V,
r• = 3.0Â, Lÿ = 80nH,
Cÿ = 67pF
Lÿ, Cÿ from Fig. E
Energy losses include “tail” and
diode (IDH15S120) reverse
recovery.
6
Rev. 1.1, 2011-01-25
IGW25N120H3
High speed switching series third generation
110
100
100
I†, COLLECTOR CURRENT [A]
I†, COLLECTOR CURRENT [A]
90
80
70
60
50
40
T†=80° triangle
30
tÔ=1µs
10µs
10
50µs
100µs
200µs
500µs
DC
1
T†=110° triangle
20
T†=80° rectangle
10
0
T†=110° rectangle
1
10
100
0.1
1000
1
f, SWITCHING FREQUENCY [kHz]
10
100
1000
V†Š, COLLECTOR-EMITTER VOLTAGE [V]
Figure 1. Collector current as a function of switching
frequency
(TÎù175°C, D=0.5, V†Š=600V, V•Š=15/0V,
R•=23Â)
Figure 2. Forward bias safe operating area
(D=0, T†=25°C, TÎù175°C; V•Š=15V)
350
50
300
I†, COLLECTOR CURRENT [A]
PÚÓÚ, POWER DISSIPATION [W]
40
250
200
150
100
30
20
10
50
0
25
50
75
100
125
150
0
175
T†, CASE TEMPERATURE [°C]
25
50
75
100
125
150
175
T†, CASE TEMPERATURE [°C]
Figure 3. Power dissipation as a function of case
temperature
(TÎù175°C)
Figure 4. Collector current as a function of case
temperature
(V•Šú15V, TÎù175°C)
7
Rev. 1.1, 2011-01-25
IGW25N120H3
High speed switching series third generation
100
100
V•Š=20V
17V
80
15V
13V
11V
60
9V
7V
5V
40
20
0
17V
80
I†, COLLECTOR CURRENT [A]
I†, COLLECTOR CURRENT [A]
V•Š=20V
15V
13V
11V
60
9V
7V
5V
40
20
0
2
4
0
6
0
V†Š, COLLECTOR-EMITTER VOLTAGE [V]
Figure 5. Typical output characteristic
(TÎ=25°C)
6
8
5.0
V†ŠñÙÈÚò, COLLECTOR-EMITTER SATURATION [A]
TÎ=25°C
TÎ=175°C
60
I†, COLLECTOR CURRENT [A]
4
Figure 6. Typical output characteristic
(TÎ=175°C)
75
45
30
15
0
2
V†Š, COLLECTOR-EMITTER VOLTAGE [V]
5
10
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
15
V•Š, GATE-EMITTER VOLTAGE [V]
I†=12.5A
I†=25A
I†=50A
0
25
50
75
100
125
150
175
TÎ, JUNCTION TEMPERATURE [°C]
Figure 7. Typical transfer characteristic
(V†Š=20V)
Figure 8. Typical collector-emitter saturation voltage
as a function of junction temperature
(V•Š=15V)
8
Rev. 1.1, 2011-01-25
IGW25N120H3
High speed switching series third generation
1000
1000
tÁñÓËËò
tË
tÁñÓÒò
tØ
t, SWITCHING TIMES [ns]
t, SWITCHING TIMES [ns]
tÁñÓËËò
tË
tÁñÓÒò
tØ
100
10
5
15
25
35
100
10
45
5
15
I†, COLLECTOR CURRENT [A]
Figure 9. Typical switching times as a function of
collector current
(ind. load, TÎ=175°C, V†Š=600V,
V•Š=15/0V, R•=23Â, test circuit in Fig. E)
45
55
65
7
V•ŠñÚÌò, GATE-EMITTER THRESHOLD VOLTAGE [V]
tÁñÓËËò
tË
tÁñÓÒò
tØ
t, SWITCHING TIMES [ns]
35
Figure 10. Typical switching times as a function of
gate resistor
(ind. load, TÎ=175°C, V†Š=600V,
V•Š=15/0V, I†=25A, test circuit in Fig. E)
1000
100
10
25
R•, GATE RESISTOR [Â]
0
25
50
75
100
125
150
typ.
min.
max.
6
5
4
3
2
175
TÎ, JUNCTION TEMPERATURE [°C]
0
25
50
75
100
125
150
175
TÎ, JUNCTION TEMPERATURE [°C]
Figure 11. Typical switching times as a function of
junction temperature
(ind. load, V†Š=600V, V•Š=15/0V,
I†=25A, R•=23Â, test circuit in Fig. E)
Figure 12. Gate-emitter threshold voltage as a
function of junction temperature
(I†=0.85mA)
9
Rev. 1.1, 2011-01-25
IGW25N120H3
High speed switching series third generation
12
7
8
6
4
2
0
EÓËË
EÓÒ
EÚÙ
6
10
E, SWITCHING ENERGY LOSSES [mJ]
E, SWITCHING ENERGY LOSSES [mJ]
EÓËË
EÓÒ
EÚÙ
5
4
3
2
1
5
15
25
35
0
45
5
15
I†, COLLECTOR CURRENT [A]
25
35
45
55
65
R•, GATE RESISTOR [Â]
Figure 13. Typical switching energy losses as a
function of collector current
(ind. load, TÎ=175°C, V†Š=600V,
V•Š=15/0V, R•=23Â, test circuit in Fig. E)
Figure 14. Typical switching energy losses as a
function of gate resistor
(ind. load, TÎ=175°C, V†Š=600V,
V•Š=15/0V, I†=25A, test circuit in Fig. E)
6
EÓËË
EÓÒ
EÚÙ
E, SWITCHING ENERGY LOSSES [mJ]
E, SWITCHING ENERGY LOSSES [mJ]
4
EÓËË
EÓÒ
EÚÙ
3
2
1
0
0
25
50
75
100
125
150
5
4
3
2
1
0
400
175
TÎ, JUNCTION TEMPERATURE [°C]
500
600
700
800
V†Š, COLLECTOR-EMITTER VOLTAGE [V]
Figure 15. Typical switching energy losses as a
function of junction temperature
(ind load, V†Š=600V, V•Š=15/0V, I†=25A,
R•=23Â, test circuit in Fig. E)
Figure 16. Typical switching energy losses as a
function of collector emitter voltage
(ind. load, TÎ=175°C, V•Š=15/0V, I†=25A,
R•=23Â, test circuit in Fig. E)
10
Rev. 1.1, 2011-01-25
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IGW25N120H3
High speed switching series third generation
16
240V
960V
1000
12
C, CAPACITANCE [pF]
V•Š, GATE-EMITTER VOLTAGE [V]
14
10
8
6
CÍÙÙ
CÓÙÙ
CØÙÙ
100
4
2
0
0
20
40
60
80
100
10
120
0
Q•Š, GATE CHARGE [nC]
Figure 17. Typical gate charge
(I†=25A)
30
50
160
t»†, SHORT CIRCUIT WITHSTAND TIME [µs]
I†ñ»†ò, SHORT CIRCUIT COLLECTOR CURRENT [A]
20
Figure 18. Typical capacitance as a function of
collector-emitter voltage
(V•Š=0V, f=1MHz)
180
140
120
100
80
60
40
20
10
V†Š, COLLECTOR-EMITTER VOLTAGE [V]
10
12
14
16
40
30
20
10
0
18
V•Š, GATE-EMITTER VOLTAGE [V]
10
12
14
16
18
20
V•Š, GATE-EMITTER VOLTAGE [V]
Figure 19. Typical short circuit collector current as a
function of gate-emitter voltage
(V†Šù600V, start atTÎ=25°C)
Figure 20. Short circuit withstand time as a function
of gate-emitter voltage
(V†Šù600V, start at TÎù150°C)
11
Rev. 1.1, 2011-01-25
IGW25N120H3
High speed switching series third generation
ZÚÌœ†, TRANSIENT THERMAL IMPEDANCE [K/W]
1
D=0.5
0.2
0.1
0.1
0.05
0.02
0.01
single pulse
0.01
i:
1
2
3
4
5
rÍ[K/W]: 0.08133 0.09366 0.22305
0.05925
5.7E-3
2.6E-4
1.7E-3
0.01009673 0.0336145 0.2730749
τ Í[s]:
0.001
1E-6
1E-5
1E-4
0.001
0.01
0.1
1
tÔ, PULSE WIDTH [s]
Figure 21. IGBT transient thermal impedance
(D=tÔ/T)
12
Rev. 1.1, 2011-01-25
IGW25N120H3
High speed switching series third generation
PG-TO247-3
13
Rev. 1.1, 2011-01-25
IGW25N120H3
High speed switching series third generation
τ
14
Rev. 1.1, 2011-01-25
IGW25N120H3
High speed switching series third generation
Revision History
IGW25N120H3
Revision: 2011-01-25, Rev. 1.1
Previous Revision
Revision
Date
Subjects (major changes since last revision)
1.1
-
Preliminary data sheet
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81726 München, Germany
© 2011 Infineon Technologies AG
All Rights Reserved.
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Due to technical requirements, components may contain dangerous substances. For information on the types in question,
please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support
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15
Rev. 1.1, 2011-01-25