SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution • • • • PG-TO-220-3-1 PG-TO-247-3 High ruggedness, temperature stable behaviour Pb-free lead plating; RoHS compliant Qualified according to JEDEC1 for target applications Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type Tj VCE IC Eoff) SGP30N60HS 600V 30 480µJ 150°C G30N60HS PG-TO-220-3-1 SGW30N60HS 600V 30 480µJ 150°C G30N60HS PG-TO-247-3 Marking Package Maximum Ratings Parameter Symbol Collector-emitter voltage VCE DC collector current IC Value 600 Unit V A TC = 25°C 41 TC = 100°C 30 Pulsed collector current, tp limited by Tjmax ICpuls 112 Turn off safe operating area - 112 Avalanche energy single pulse IC = 20A, VCC=50V, RGE=25Ω start TJ=25°C EAS 165 mJ Gate-emitter voltage static transient (tp<1µs, D<0.05) VGE ±20 ±30 V Short circuit withstand time2) tSC 10 µs Ptot 250 W Operating junction and storage temperature Tj , Tstg -55...+150 °C Time limited operating junction temperature for t < 150h Tj(tl) 175 Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260 VCE ≤ 600V, Tj ≤ 150°C VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C Power dissipation TC = 25°C 1 2) J-STD-020 and JESD-022 Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors 1 Rev. 2.4 Nov 09 SGP30N60HS SGW30N60HS Thermal Resistance Parameter Symbol Conditions Max. Value Unit 0.5 K/W Characteristic IGBT thermal resistance, RthJC junction – case Thermal resistance, junction – ambient RthJA PG-TO-220-3-1 62 PG-TO-247-3-21 40 Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Value min. Typ. max. 600 - - T j = 25° C 2.8 3.15 T j = 15 0° C 3.5 4.00 4 5 Unit Static Characteristic Collector-emitter breakdown voltage V ( B R ) C E S V G E = 0V, I C = 50 0µA Collector-emitter saturation voltage VCE(sat) V V G E = 15V, I C = 30A Gate-emitter threshold voltage VGE(th) I C = 70 0µA, V C E =V G E Zero gate voltage collector current ICES V C E = 600V ,V G E = 0V 3 µA T j = 25° C - - 40 T j = 15 0° C - - 3000 Gate-emitter leakage current IGES V C E = 0V ,V G E = 2 0V - - 100 nA Transconductance gfs V C E = 20V, I C = 30A - 20 - S Input capacitance Ciss V C E = 25V, - 1500 Output capacitance Coss V G E = 0V, - 150 Reverse transfer capacitance Crss f= 1 M Hz - 92 Gate charge QGate V C C = 4 80V, I C = 30A - 141 nC - 7 nH Dynamic Characteristic pF V G E = 1 5V Internal emitter inductance LE measured 5mm (0.197 in.) from case Short circuit collector current 1) 1) PG -TO -220-3-1 PG -TO -247-3-21 IC(SC) V G E = 1 5V,t S C ≤10µs V C C ≤ 600V, T j ≤ 150° C 13 - 220 A Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors 2 Rev. 2.4 Nov 09 SGP30N60HS SGW30N60HS Switching Characteristic, Inductive Load, at Tj=25 °C Parameter Symbol Conditions Value min. typ. - 20 - 21 - 250 max. Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets T j = 25° C, V C C = 4 00V, I C = 30A, V G E = 0/ 1 5V , R G = 1 1Ω L σ 1 ) = 60nH, 1) C σ = 40 pF Energy losses include “tail” and diode reverse recovery. - 25 - 0.60 - 0.55 - 1.15 ns mJ Switching Characteristic, Inductive Load, at Tj=150 °C Parameter Symbol Conditions Value min. typ. max. Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets 1) T j = 15 0° C V C C = 4 00V, I C = 30A, V G E = 0/ 1 5V , R G = 1. 8Ω L σ 1 ) = 60nH, C σ 1 ) = 40pF Energy losses include “tail” and diode reverse recovery. T j = 15 0° C V C C = 4 00V, I C = 30A, V G E = 0/ 1 5V , R G = 11Ω L σ 1 ) = 60nH, 1) C σ = 40pF Energy losses include “tail” and diode reverse recovery. - 16 - 13 - 122 - 29 - 0.78 - 0.48 - 1.26 - 20 - 19 - 274 - 27 - 0.91 - 0.70 - 1.61 ns mJ ns mJ Leakage inductance L σ and Stray capacity C σ due to test circuit in Figure E. Power Semiconductors 3 Rev. 2.4 Nov 09 SGP30N60HS SGW30N60HS 100A tP=4µs 15µs T C=80°C IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 100A 80A T C=110°C 60A 40A Ic 20A 0A 50µs 10A 200µs 1ms 1A Ic 10Hz 100Hz 1kHz DC 10kHz 0.1A 1V 100kHz f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj ≤ 150°C, D = 0.5, VCE = 400V, VGE = 0/+15V, RG = 11Ω) 10V 100V 1000V VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25°C, Tj ≤ 150°C; VGE=15V) Limited by Bond wire 40A IC, COLLECTOR CURRENT Ptot, POWER DISSIPATION 200W 150W 100W 50W 0W 2 5 °C 5 0 °C 7 5 °C 1 0 0 °C 20A 10A 0A 25°C 1 2 5 °C TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj ≤ 150°C) Power Semiconductors 30A 75°C 125°C TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE ≤ 15V, Tj ≤ 150°C) 4 Rev. 2.4 Nov 09 SGP30N60HS SGW30N60HS 70A 60A 50A V GE=20V 15V 13V 11V 9V 7V 5V 70A 40A 30A 50A 40A 30A 20A 10A 10A 2V 4V 0A 6V T J = -5 5 °C 80A 2 5 °C 1 5 0 °C 60A 40A 20A 0A 0V 2V 4V 6V 8V VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VCE=10V) Power Semiconductors 0V 2V 4V 6V VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristic (Tj = 150°C) VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25°C) IC, COLLECTOR CURRENT 60A 20A 0A 0V VGE=20V 15V 13V 11V 9V 7V 5V 80A IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 80A 5,5V 5,0V I C =60A 4,5V 4,0V 3,5V I C =30A 3,0V 2,5V I C =15A 2,0V 1,5V 1,0V -50°C 0°C 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V) 5 Rev. 2.4 Nov 09 SGP30N60HS SGW30N60HS t, SWITCHING TIMES t, SWITCHING TIMES td(off) 100ns tf 100 ns td(off) tf td(on) td(on) tr 10ns 0A 10A 20A 30A 40A 10 ns 50A t, SWITCHING TIMES td(off) 100ns tf tr td(on) 10ns 0°C 50°C 100°C 5Ω 10Ω 15Ω 20Ω 25Ω 5,5V 5,0V 4,5V 4,0V 3,5V max. 3,0V 2,5V typ. 2,0V 1,5V 1,0V -50°C 150°C TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE=400V, VGE=0/15V, IC=30A, RG=11Ω, Dynamic test circuit in Figure E) Power Semiconductors 0Ω RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ=150°C, VCE=400V, VGE=0/15V, IC=30A, Dynamic test circuit in Figure E) VGE(th), GATE-EMITT TRSHOLD VOLTAGE IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, TJ=150°C, VCE=400V, VGE=0/15V, RG=11Ω, Dynamic test circuit in Figure E) tr min. 0°C 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.7mA) 6 Rev. 2.4 Nov 09 SGP30N60HS SGW30N60HS 5,0mJ *) Eon and Ets include losses due to diode recovery 3,0 mJ 4,0mJ 3,0mJ E on* 2,0mJ Eoff 1,0mJ E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES *) E on and E ts include losses due to diode recovery 2,5 mJ 2,0 mJ 1,5 mJ Ets* 1,0 mJ Eon* 0,5 mJ Eoff 0,0mJ 0A 10A 20A 30A 40A 50A 0,0 mJ 60A E, SWITCHING ENERGY LOSSES *) Eon and Ets include losses due to diode recovery Ets* 1,5mJ Eon* 1,0mJ Eoff 0,5mJ 0Ω 5Ω 10Ω 15Ω 0,0mJ 50°C 100°C -1 10 K/W 30Ω 0.2 0.1 0.05 -2 10 K/W 0.02 R,(K/W) 0.3681 0.0938 0.038 0.01 150°C τ, (s) 0.0555 1.26E-03 1.49E-04 -3 10 K/W R1 R2 single pulse 10 K/W 1µs TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE=400V, VGE=0/15V, IC=30A, RG=11Ω, Dynamic test circuit in Figure E) Power Semiconductors 25Ω D=0.5 C 1 = τ 1 /R 1 C 2 = τ 2 /R 2 -4 0°C 20Ω RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ=150°C, VCE=400V, VGE=0/15V, IC=30A, Dynamic test circuit in Figure E) ZthJC, TRANSIENT THERMAL RESISTANCE IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ=150°C, VCE=400V, VGE=0/15V, RG=11Ω, Dynamic test circuit in Figure E) 10µs 100µs 1ms 10ms 100ms tP, PULSE WIDTH Figure 16. IGBT transient thermal resistance (D = tp / T) 7 Rev. 2.4 Nov 09 15V 120V 480V 10V Coss Crss 100pF 5V 0V 0nC 50nC 100nC 10pF 150nC 15µs 10µs tSC, 5µs 0µs 10V 11V 12V 13V 10V 20V 300A 250A 200A 150A 100A 50A 0A 10V 14V VGE, GATE-EMITETR VOLTAGE Figure 19. Short circuit withstand time as a function of gate-emitter voltage (VCE=600V, start at TJ=25°C) Power Semiconductors 0V VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz) IC(sc), short circuit COLLECTOR CURRENT QGE, GATE CHARGE Figure 17. Typical gate charge (IC=30 A) SHORT CIRCUIT WITHSTAND TIME Ciss 1nF c, CAPACITANCE VGE, GATE-EMITTER VOLTAGE SGP30N60HS SGW30N60HS 12V 14V 16V 18V VGE, GATE-EMITETR VOLTAGE Figure 20. Typical short circuit collector current as a function of gateemitter voltage (VCE ≤ 600V, Tj ≤ 150°C) 8 Rev. 2.4 Nov 09 SGP30N60HS SGW30N60HS PG-TO220-3-1 Power Semiconductors 9 Rev. 2.4 Nov 09 SGP30N60HS SGW30N60HS Power Semiconductors 10 Rev. 2.4 Nov 09 SGP30N60HS SGW30N60HS τ1 τ2 r1 r2 τn rn Tj (t) p(t) r1 r2 rn TC Figure D. Thermal equivalent circuit Figure A. Definition of switching times Figure B. Definition of switching losses Power Semiconductors Figure E. Dynamic test circuit Leakage inductance Lσ =60nH and Stray capacity C σ =40pF. 11 Rev. 2.4 Nov 09 SGP30N60HS SGW30N60HS Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors 12 Rev. 2.4 Nov 09