LRC LMBTA55LT1G

LESHAN RADIO COMPANY, LTD.
Driver Transistors
PNP Silicon
LMBTA55LT1G
LMBTA56LT1G
We declare that the material of product
compliance with RoHS requirements.
3
1
2
MAXIMUM RATINGS
Rating
Symbol
Value
LMBTA55 LMBTA56
Collector–Emitter Voltage
V
CEO
–60
–80
Vdc
Collector–Base Voltage
V CBO
–60
–80
Vdc
Emitter–Base Voltage
V
Collector Current — Continuous
EBO
IC
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
Unit
–4.0
Vdc
–500
mAdc
3
COLLECTOR
1
BASE
2
EMITTER
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
PD
225
mW
R θJA
PD
1.8
556
300
mW/°C
°C/W
mW
R θJA
T J , T stg
2.4
417
–55 to +150
mW/°C
°C/W
°C
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
LMBTA55LT1G = 2H; LMBTA56 LT1G = 2GM
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (3)
(I C = –1.0 mAdc, I B= 0 )
V
LMBTA55
LMBTA56
Emitter–Base Breakdown Voltage
V
Vdc
(BR)CEO
(BR)EBO
–60
–80
—
—
–4.0
—
Vdc
—
–0.1
µAdc
(I E = –100 µAdc, I C = 0 )
Collector Cutoff Current
( V CE = –60Vdc, I B = 0)
Collector Cutoff Current
( V CB = –60Vdc, I E= 0)
LMBTA55
—
–0.1
( V CB = –80Vdc, I E= 0)
LMBTA56
—
–0.1
I CES
µAdc
I CBO
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width <300 µs, Duty Cycle <2.0%.
Rev.O 1/3
LESHAN RADIO COMPANY, LTD.
LMBTA55LT1G LMBTA56LT1G
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
VCE(sat)
100
100
—
—
—
–0.25
Vdc
V BE(on)
—
–1.2
Vdc
fT
50
—
MHz
ON CHARACTERISTICS
DC Current Gain
(I C = –10 mAdc, V CE = –1.0 Vdc)
(I C = –100mAdc, V CE = –1.0 Vdc)
Collector–Emitter Saturation Voltage
(I C = –100mAdc, I B = –10mAdc)
Base–Emitter On Voltage
(I C = –100mAdc, V CE = –1.0Vdc)
hFE
—
SMALL–SIGNAL CHARACTERISTICS
Current –Gain–Bandwidth Product(4)
(V CE = –1.0 Vdc, I C = –100mAdc, f = 100 MHz)
4. f T is defined as the frequency at which |h f e | extrapolates to unity.
ORDERING INFORMATION
Device
Marking
LMBTA55LT1G
2H
LMBTA56LT1G
LMBTA55LT3G
2GM
2H
LMBTA56LT3G
2GM
TURN−ON TIME
TURN−OFF TIME
+40 V
100
VCC
+VBB
+40 V
RL
100
RL
OUTPUT
+10 V
tr = 3.0 ns
OUTPUT
RB
Vin
0
3000/Tape & Reel
10000/Tape & Reel
10000/Tape & Reel
VCC
−1.0 V
5.0 ms
Shipping
3000/Tape & Reel
Vin
* CS t 6.0 pF
5.0 mF
RB
* CS t 6.0 pF
5.0 mF
100
100
5.0 ms
tr = 3.0 ns
*Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities
Figure 1. Switching Time Test Circuits
Rev.O 2/3
LESHAN RADIO COMPANY, LTD.
LMBTA55LT1G LMBTA56LT1G
SOT-23
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982
2. CONTROLLING DIMENSION: INCH.
A
L
3
1
V
2
A
B
C
D
G
H
J
G
C
D
MIN
0.1102
0.0472
0.0350
0.0150
0.0701
0.0005
INCHES
MAX
0.1197
0.0551
0.0440
0.0200
0.0807
0.0040
0.0034
0.0140
0.0350
0.0830
0.0177
0.0070
0.0285
0.0401
0.1039
0.0236
DIM
B S
H
K
J
K
L
S
V
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.35
0.89
2.10
0.45
0.177
0.69
1.02
2.64
0.60
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
Rev.O 3/3