VTP Process Photodiodes VTP7110 PACKAGE DIMENSIONS inch (mm) CASE 7 LATERAL CHIP ACTIVE AREA: .0011 in2 (0.684 mm2) PRODUCT DESCRIPTION Small area planar silicon photodiode in a clear, lensed sidelooking package. These diodes exhibit low dark current under reverse bias and fast speed of response. ABSOLUTE MAXIMUM RATINGS Storage Temperature: Operating Temperature: -40°C to 85°C -40°C to 85°C ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTP curves, page 46) VTP7110 SYMBOL CHARACTERISTIC TEST CONDITIONS UNITS Min. ISC Max. Short Circuit Current H = 100 fc, 2850 K ISC Temperature Coefficient 2850 K Open Circuit Voltage H = 100 fc, 2850 K 350 mV VOC Temperature Coefficient 2850 K -2.0 mV/°C Dark Current H = 0, VR = 10 V RSH Shunt Resistance H = 0, V = 10 mV TC ISC VOC TC VOC ID CJ Junction Capacitance H = 0, V = 3 V Re Responsivity 940 nm SR Sensitivity @ Peak 6 Typ. 9 µA .20 %/°C 35 7 nA GΩ 25 pF A/(W/cm2) .015 .55 A/W λrange Spectral Application Range λp Spectral Response - Peak VBR Breakdown Voltage θ1/2 Angular Resp. - 50% Resp. Pt. ±58 Degrees NEP Noise Equivalent Power 1.9 x 10 -13 (Typ.) W ⁄ Hz Specific Detectivity 5.3 x 10 11 (Typ.) cm Hz / W D* 400 30 PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA 1150 nm 925 nm 140 V Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto 58