VTP Process Photodiodes VTP3410LA PACKAGE DIMENSIONS inch (mm) CASE 50A LONG T-1 CHIP ACTIVE AREA: .0011 in2 (0.684 mm2) PRODUCT DESCRIPTION Small area planar silicon photodiode in a long T1, endlooking package. The package material is infrared transmitting (blocking visible light). These diodes exhibit low dark current under reverse bias and fast speed of response. ABSOLUTE MAXIMUM RATINGS Storage Temperature: Operating Temperature: -40°C to 100°C -40°C to 100°C ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTP curves, page 46) VTP3410LA SYMBOL CHARACTERISTIC TEST CONDITIONS UNITS Min. ISC Max. Short Circuit Current H = 100 fc, 2850 K ISC Temperature Coefficient 2850 K Open Circuit Voltage H = 100 fc, 2850 K 350 mV VOC Temperature Coefficient 2850 K -2.0 mV/°C Dark Current H = 0, VR = 50 V RSH Shunt Resistance H = 0, V = 10 mV TC ISC VOC TC VOC ID CJ Junction Capacitance H = 0, V = 3 V Re Responsivity 940 nm SR Sensitivity @ Peak 15 Typ. 22 µA .26 %/°C 35 10 nA GΩ 25 pF A/(W/cm2) .013 .55 A/W λrange Spectral Application Range λp Spectral Response - Peak VBR Breakdown Voltage θ1/2 Angular Resp. - 50% Resp. Pt. ±20 Degrees NEP Noise Equivalent Power 1.9 x 10 -13 (Typ.) W ⁄ Hz Specific Detectivity 5.3 x 10 11 (Typ.) cm Hz / W D* 700 30 PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA 1150 nm 925 nm 140 V Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto 54