MBD54DWT1G Preferred Device Dual Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. Features • Extremely Fast Switching Speed • Low Forward Voltage − 0.35 V @ IF = 10 mAdc • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com 30 VOLTS DUAL HOT−CARRIER DETECTOR AND SWITCHING DIODES Anode 1 N/C 2 MAXIMUM RATINGS (TJ = 125°C unless otherwise noted) Rating Symbol Value Unit Reverse Voltage VR 30 V Forward Power Dissipation @ TA = 25°C Derate above 25°C PF 150 1.2 mW mW/°C Forward Current (DC) IF 200 Max mA Junction Temperature TJ 125 Max °C Tstg −55 to +150 Storage Temperature Range 6 Cathode Cathode 3 4 Anode MARKING DIAGRAM 6 SOT−363 CASE 419B STYLE 6 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 5 N/C 1 BL MG G 1 M G = Date Code = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† MBD54DWT1G SOT−363 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2009 October, 2009 − Rev. 7 1 Publication Order Number: MBD54DWT1/D MBD54DWT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE) Symbol Min Typ Max Unit V(BR)R 30 − − V Total Capacitance (VR = 1.0 V, f = 1.0 MHz) CT − 7.6 10 pF Reverse Leakage (VR = 25 V) IR − 0.5 2.0 mAdc Forward Voltage (IF = 0.1 mAdc) VF − 0.22 0.24 Vdc Forward Voltage (IF = 30 mAdc) VF − 0.41 0.5 Vdc Forward Voltage (IF = 100 mAdc) VF − 0.52 1.0 Vdc Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) (Figure 1) trr − − 5.0 ns Forward Voltage (IF = 1.0 mAdc) VF − 0.29 0.32 Vdc Forward Voltage (IF = 10 mAdc) VF − 0.35 0.40 Vdc Forward Current (DC) IF − − 200 mAdc Repetitive Peak Forward Current IFRM − − 300 mAdc Non−Repetitive Peak Forward Current (t < 1.0 s) IFSM − − 600 mAdc Characteristic Reverse Breakdown Voltage (IR = 10 mA) 820 W +10 V 2k 100 mH 0.1 mF IF tr 0.1 mF tp t IF trr 10% t DUT 50 W OUTPUT PULSE GENERATOR 50 W INPUT SAMPLING OSCILLOSCOPE 90% IR VR INPUT SIGNAL Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit http://onsemi.com 2 iR(REC) = 1 mA OUTPUT PULSE (IF = IR = 10 mA; measured at iR(REC) = 1 mA) MBD54DWT1G 100 1000 IR , REVERSE CURRENT (μA) 150°C 10 125°C 1.0 85°C 25°C 0.1 0.0 -40°C TA = 125°C 10 1.0 TA = 85°C 0.1 0.01 -55°C TA = 25°C 0.001 0.1 0.2 0.3 0.4 0.5 0 0.6 5 VF, FORWARD VOLTAGE (VOLTS) Figure 2. Forward Voltage 10 15 20 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Leakage Current 14 C T , TOTAL CAPACITANCE (pF) IF, FORWARD CURRENT (mA) TA = 150°C 100 12 10 8 6 4 2 0 0 5 10 15 20 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Total Capacitance http://onsemi.com 3 25 30 25 30 MBD54DWT1G PACKAGE DIMENSIONS SC−88 (SOT−363) CASE 419B−02 ISSUE W D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B−01 OBSOLETE, NEW STANDARD 419B−02. e 6 5 4 HE DIM A A1 A3 b C D E e L HE −E− 1 2 3 b 6 PL 0.2 (0.008) M E M A3 INCHES NOM MAX 0.037 0.043 0.002 0.004 0.008 REF 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 0.045 0.049 0.053 0.026 BSC 0.004 0.008 0.012 0.078 0.082 0.086 MIN 0.031 0.000 STYLE 6: PIN 1. ANODE 2 2. N/C 3. CATHODE 1 4. ANODE 1 5. N/C 6. CATHODE 2 C A A1 MILLIMETERS MIN NOM MAX 0.80 0.95 1.10 0.00 0.05 0.10 0.20 REF 0.10 0.21 0.30 0.10 0.14 0.25 1.80 2.00 2.20 1.15 1.25 1.35 0.65 BSC 0.10 0.20 0.30 2.00 2.10 2.20 L SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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