ONSEMI MBD54DWT1G_09

MBD54DWT1G
Preferred Device
Dual Schottky Barrier
Diodes
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
Features
• Extremely Fast Switching Speed
• Low Forward Voltage − 0.35 V @ IF = 10 mAdc
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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30 VOLTS
DUAL HOT−CARRIER
DETECTOR AND SWITCHING
DIODES
Anode 1
N/C 2
MAXIMUM RATINGS (TJ = 125°C unless otherwise noted)
Rating
Symbol
Value
Unit
Reverse Voltage
VR
30
V
Forward Power Dissipation
@ TA = 25°C
Derate above 25°C
PF
150
1.2
mW
mW/°C
Forward Current (DC)
IF
200 Max
mA
Junction Temperature
TJ
125 Max
°C
Tstg
−55 to +150
Storage Temperature Range
6 Cathode
Cathode 3
4 Anode
MARKING
DIAGRAM
6
SOT−363
CASE 419B
STYLE 6
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
5 N/C
1
BL MG
G
1
M
G
= Date Code
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
MBD54DWT1G
SOT−363
(Pb−Free)
3000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2009
October, 2009 − Rev. 7
1
Publication Order Number:
MBD54DWT1/D
MBD54DWT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)
Symbol
Min
Typ
Max
Unit
V(BR)R
30
−
−
V
Total Capacitance (VR = 1.0 V, f = 1.0 MHz)
CT
−
7.6
10
pF
Reverse Leakage (VR = 25 V)
IR
−
0.5
2.0
mAdc
Forward Voltage (IF = 0.1 mAdc)
VF
−
0.22
0.24
Vdc
Forward Voltage (IF = 30 mAdc)
VF
−
0.41
0.5
Vdc
Forward Voltage (IF = 100 mAdc)
VF
−
0.52
1.0
Vdc
Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc)
(Figure 1)
trr
−
−
5.0
ns
Forward Voltage (IF = 1.0 mAdc)
VF
−
0.29
0.32
Vdc
Forward Voltage (IF = 10 mAdc)
VF
−
0.35
0.40
Vdc
Forward Current (DC)
IF
−
−
200
mAdc
Repetitive Peak Forward Current
IFRM
−
−
300
mAdc
Non−Repetitive Peak Forward Current (t < 1.0 s)
IFSM
−
−
600
mAdc
Characteristic
Reverse Breakdown Voltage (IR = 10 mA)
820 W
+10 V
2k
100 mH
0.1 mF
IF
tr
0.1 mF
tp
t
IF
trr
10%
t
DUT
50 W OUTPUT
PULSE
GENERATOR
50 W INPUT
SAMPLING
OSCILLOSCOPE
90%
IR
VR
INPUT SIGNAL
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
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2
iR(REC) = 1 mA
OUTPUT PULSE
(IF = IR = 10 mA; measured
at iR(REC) = 1 mA)
MBD54DWT1G
100
1000
IR , REVERSE CURRENT (μA)
150°C
10
125°C
1.0
85°C
25°C
0.1
0.0
-40°C
TA = 125°C
10
1.0
TA = 85°C
0.1
0.01
-55°C
TA = 25°C
0.001
0.1
0.2
0.3
0.4
0.5
0
0.6
5
VF, FORWARD VOLTAGE (VOLTS)
Figure 2. Forward Voltage
10
15
20
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Leakage Current
14
C T , TOTAL CAPACITANCE (pF)
IF, FORWARD CURRENT (mA)
TA = 150°C
100
12
10
8
6
4
2
0
0
5
10
15
20
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Total Capacitance
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3
25
30
25
30
MBD54DWT1G
PACKAGE DIMENSIONS
SC−88 (SOT−363)
CASE 419B−02
ISSUE W
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419B−01 OBSOLETE, NEW STANDARD 419B−02.
e
6
5
4
HE
DIM
A
A1
A3
b
C
D
E
e
L
HE
−E−
1
2
3
b 6 PL
0.2 (0.008)
M
E
M
A3
INCHES
NOM MAX
0.037 0.043
0.002 0.004
0.008 REF
0.004 0.008 0.012
0.004 0.005 0.010
0.070 0.078 0.086
0.045 0.049 0.053
0.026 BSC
0.004 0.008 0.012
0.078 0.082 0.086
MIN
0.031
0.000
STYLE 6:
PIN 1. ANODE 2
2. N/C
3. CATHODE 1
4. ANODE 1
5. N/C
6. CATHODE 2
C
A
A1
MILLIMETERS
MIN
NOM MAX
0.80
0.95
1.10
0.00
0.05
0.10
0.20 REF
0.10
0.21
0.30
0.10
0.14
0.25
1.80
2.00
2.20
1.15
1.25
1.35
0.65 BSC
0.10
0.20
0.30
2.00
2.10
2.20
L
SOLDERING FOOTPRINT*
0.50
0.0197
0.65
0.025
0.65
0.025
0.40
0.0157
1.9
0.0748
SCALE 20:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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PUBLICATION ORDERING INFORMATION
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4
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For additional information, please contact your local
Sales Representative
MBD54DWT1/D