ONSEMI NSVBAT54HT1G

BAT54HT1G,
NSVBAT54HT1G
Schottky Barrier Diodes
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
Features






Extremely Fast Switching Speed
Low Forward Voltage − 0.35 V (Typ) @ IF = 10 mAdc
Device Marking: JV
AEC Qualified and PPAP Capable
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS (TJ = 125C unless otherwise noted)
Rating
Reverse Voltage
Symbol
Value
Unit
VR
30
V
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30 VOLT SILICON
HOT−CARRIER DETECTOR
AND SWITCHING DIODES
SOD−323
CASE 477
STYLE 1
1
CATHODE
2
ANODE
MARKING DIAGRAM
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1
JVM G
G
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Total Device Dissipation FR−5 Board,
(Note 1)
TA = 25C
Derate above 25C
PD
Forward Current (DC)
IF
Non−Repetitive Peak Forward Current,
tp < 10 msec
IFSM
Repetitive Peak Forward Current
Pulse Wave = 1 sec, Duty Cycle = 66%
IFRM
Thermal Resistance
Junction−to−Ambient
RqJA
Junction and Storage Temperature Range
TJ, Tstg
Max
Unit
200
1.57
mW
mW/C
200
Max
mA
JV
M
G
(Note: Microdot may be in either location)
ORDERING INFORMATION
Package
Shipping†
BAT54HT1G
SOD−323
(Pb−Free)
3,000 /
Tape & Reel
NSVBAT54HT1G
SOD−323
(Pb−Free)
3,000 /
Tape & Reel
Device
600
300
mA
mA
C/W
635
−55
to150
C
= Device Code
= Date Code
= Pb−Free Package
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1. FR−4 Minimum Pad
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
 Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 6
1
Publication Order Number:
BAT54HT1/D
BAT54HT1G, NSVBAT54HT1G
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic
Symbol
Reverse Breakdown Voltage
(IR = 10 A)
V(BR)R
Total Capacitance
(VR = 1.0 V, f = 1.0 MHz)
CT
Reverse Leakage
(VR = 25 V)
IR
Forward Voltage
(IF = 0.1 mAdc)
VF
Forward Voltage
(IF = 30 mAdc)
VF
Forward Voltage
(IF = 100 mAdc)
VF
Reverse Recovery Time
(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) Figure 1
trr
Forward Voltage
(IF = 1.0 mAdc)
VF
Forward Voltage
(IF = 10 mAdc)
VF
Min
Typ
Max
30
−
−
−
7.6
10
−
0.5
2.0
−
0.22
0.24
−
0.41
0.5
−
0.52
0.8
−
−
5.0
−
0.29
0.32
−
0.35
0.40
Unit
V
pF
Adc
Vdc
Vdc
Vdc
ns
Vdc
Vdc
820
+10 V
2k
100 H
0.1 F
IF
tr
tp
IF
trr
10%
0.1 F
DUT
50  Output
Pulse
Generator
t
50  Input
Sampling
Oscilloscope
90%
VR
IR
INPUT SIGNAL
iR(REC) = 1 mA
OUTPUT PULSE
(IF = IR = 10 mA; measured
at iR(REC) = 1 mA)
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
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2
t
BAT54HT1G, NSVBAT54HT1G
IF, FORWARD CURRENT (mA)
100
1 50C
10
1 25C
1.0
85C
0.1
0.0
25C
0.2
0.1
−40C
0.3
−55C
0.4
0.5
0.6
VF, FORWARD VOLTAGE (VOLTS)
Figure 2. Forward Voltage
IR, REVERSE CURRENT (A)
1000
TA = 150C
100
TA = 125C
10
1.0
TA = 85C
0.1
0.01
TA = 25C
0.001
0
5
10
15
20
25
30
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Leakage Current
CT, TOATAL CAPACITANCE (pF)
14
12
10
8
6
4
2
0
0
5
10
15
20
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Total Capacitance
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3
25
30
BAT54HT1G, NSVBAT54HT1G
PACKAGE DIMENSIONS
SOD−323
CASE 477−02
ISSUE H
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. LEAD THICKNESS SPECIFIED PER L/F DRAWING
WITH SOLDER PLATING.
4. DIMENSIONS A AND B DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
5. DIMENSION L IS MEASURED FROM END OF RADIUS.
HE
D
b
1
2
E
MILLIMETERS
DIM MIN
NOM MAX
A
0.80
0.90
1.00
A1 0.00
0.05
0.10
A3
0.15 REF
b
0.25
0.32
0.4
C 0.089
0.12 0.177
D
1.60
1.70
1.80
E
1.15
1.25
1.35
L
0.08
HE
2.30
2.50
2.70
A3
A
C
NOTE 3
L
NOTE 5
INCHES
NOM MAX
0.035 0.040
0.002 0.004
0.006 REF
0.010 0.012 0.016
0.003 0.005 0.007
0.062 0.066 0.070
0.045 0.049 0.053
0.003
0.090 0.098 0.105
MIN
0.031
0.000
STYLE 1:
PIN 1. CATHODE (POLARITY BAND)
2. ANODE
A1
SOLDERING FOOTPRINT*
0.63
0.025
0.83
0.033
1.60
0.063
2.85
0.112
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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BAT54HT1/D