MMBTH10LT1G, MMBTH10-4LT1G VHF/UHF Transistor NPN Silicon Features http://onsemi.com • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR 3 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 25 Vdc Collector-Base Voltage VCBO 30 Vdc Emitter-Base Voltage VEBO 3.0 Vdc Symbol Max Unit 2 EMITTER 3 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient (Note 1) Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient (Note 2) Junction and Storage Temperature Range 1 2 PD RθJA 225 1.8 mW mW/°C 556 °C/W SOT−23 (TO−236AB) CASE 318 STYLE 6 MARKING DIAGRAMS PD 300 2.4 mW mW/°C RθJA 417 °C/W TJ, Tstg −55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina 3EM MG G 3E4 MG G MMBTH10LT1G MMBTH10−04LT1G 3EM, 3E4 = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping† MMBTH10LT1G SOT−23 (Pb−Free) 3000/Tape & Reel MMBTH10LT3G SOT−23 (Pb−Free) 10000/Tape & Reel MMBTH10−4LT1G SOT−23 (Pb−Free) 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2009 August, 2009 − Rev. 3 1 Publication Order Number: MMBTH10LT1/D MMBTH10LT1G, MMBTH10−4LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit Collector−Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) V(BR)CEO 25 − − Vdc Collector−Base Breakdown Voltage (IC = 100 μAdc, IE = 0) V(BR)CBO 30 − − Vdc Emitter−Base Breakdown Voltage (IE = 10 μAdc, IC = 0) V(BR)EBO 3.0 − − Vdc Collector Cutoff Current (VCB = 25 Vdc, IE = 0) ICBO − − 100 nAdc Emitter Cutoff Current (VEB = 2.0 Vdc, IC = 0) IEBO − − 100 nAdc 60 120 − − − 240 VCE(sat) − − 0.5 Vdc VBE − − 0.95 Vdc 650 800 − − − − Characteristic OFF CHARACTERISTICS ON CHARACTERISTICS DC Current Gain (IC = 4.0 mAdc, VCE = 10 Vdc) MMBTH10LT1 MMBTH10−4LT1 Collector−Emitter Saturation Voltage (IC = 4.0 mAdc, IB = 0.4 mAdc) Base−Emitter On Voltage (IC = 4.0 mAdc, VCE = 10 Vdc) hFE − SMALL−SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product (IC = 4.0 mAdc, VCE = 10 Vdc, f = 100 MHz) MMBTH10LT1 MMBTH10−4LT1 fT MHz Collector−Base Capacitance (VCB= 10 Vdc, IE = 0, f = 1.0 MHz) Ccb − − 0.7 pF Common−Base Feedback Capacitance (VCB= 10 Vdc, IE = 0, f = 1.0 MHz) Crb − − 0.65 pF rb′Cc − − 9.0 ps Collector Base Time Constant (IC= 4.0 mAdc, VCB = 10 Vdc, f = 31.8 MHz) http://onsemi.com 2 MMBTH10LT1G, MMBTH10−4LT1G TYPICAL CHARACTERISTICS COMMON−BASE y PARAMETERS versus FREQUENCY (VCB = 10 Vdc, IC = 4.0 mAdc, TA = 25°C) yib, INPUT ADMITTANCE 0 70 gib -10 60 -20 50 jb ib (mmhos) y ib , INPUT ADMITTANCE (mmhos) 80 -bib 40 30 1000 MHz -30 700 -40 20 400 10 0 200 -50 100 200 300 400 500 f, FREQUENCY (MHz) 700 -60 1000 0 10 20 Figure 1. Rectangular Form 30 40 50 gib (mmhos) 60 100 70 80 Figure 2. Polar Form 70 60 bfb 60 400 200 50 50 600 100 40 700 -gfb 30 jb fb (mmhos) y ib , FORWARD TRANSFER ADMITTANCE (mmhos) yfb, FORWARD TRANSFER ADMITTANCE 20 10 40 30 1000 MHz 0 -10 20 -20 -30 10 100 200 300 400 500 f, FREQUENCY (MHz) 700 1000 70 Figure 3. Rectangular Form 60 50 40 10 30 20 gfb (mmhos) 0 Figure 4. Polar Form http://onsemi.com 3 -10 -20 -30 MMBTH10LT1G, MMBTH10−4LT1G TYPICAL CHARACTERISTICS COMMON−BASE y PARAMETERS versus FREQUENCY (VCB = 10 Vdc, IC = 4.0 mAdc, TA = 25°C) 0 5.0 100 4.0 200 -1.0 MPS H11 jb rb (mmhos) y rb , REVERSE TRANSFER ADMITTANCE (mmhos) yrb, REVERSE TRANSFER ADMITTANCE 3.0 400 -2.0 -brb -brb 2.0 -3.0 700 MPS H10 1.0 -4.0 -grb 0 100 200 300 400 500 f, FREQUENCY (MHz) 1000 MHz 700 -5.0 -2.0 -1.8 -1.2 -0.8 1000 Figure 5. Rectangular Form -0.4 0.4 0 grb (mmhos) 0.8 1.2 1.6 2.0 Figure 6. Polar Form yob, OUTPUT ADMITTANCE 10 1000 MHz 8.0 8.0 7.0 700 jb ob(mmhos) yob, OUTPUT ADMITTANCE (mmhos) 10 9.0 6.0 5.0 bob 4.0 6.0 4.0 400 3.0 200 2.0 2.0 gob 1.0 100 0 0 100 200 300 400 500 f, FREQUENCY (MHz) 700 0 1000 Figure 7. Rectangular Form 2.0 4.0 6.0 gob (mmhos) Figure 8. Polar Form http://onsemi.com 4 8.0 10 MMBTH10LT1G, MMBTH10−4LT1G PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. D SEE VIEW C 3 HE E c 1 DIM A A1 b c D E e L L1 HE 2 e b 0.25 q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR L1 VIEW C SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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