ONSEMI BCX19LT1G

BCX18LT1G, PNP
BCX19LT1G, NPN
General Purpose
Transistors
Voltage and Current are Negative for
PNP Transistors
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PNP
Features
NPN
COLLECTOR
3
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
COLLECTOR
3
Compliant
1
BASE
2
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
VCEO
Collector − Base Voltage
BCX19LT1
BCX18LT1
VCBO
Emitter − Base Voltage
VEBO
5.0
Vdc
IC
500
mAdc
1
50
30
Symbol
Max
Unit
PD
225
mW
1.8
mW/°C
556
°C/W
300
2.4
mW
mW/°C
RqJA
417
°C/W
TJ, Tstg
−55 to +150
°C
Junction and Storage Temperature
RqJA
PD
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in 99.5% alumina.
© Semiconductor Components Industries, LLC, 2009
August, 2009 − Rev. 0
SOT−23
CASE 318
STYLE 6
MARKING DIAGRAM
Characteristic
Thermal Resistance,
Junction−to−Ambient
2
Vdc
Total Device Dissipation FR− 5 Board
(Note 1), TA = 25°C
Derate above 25°C
Total Device Dissipation Alumina
Substrate, (Note 2) TA = 25°C
Derate above 25°C
3
Vdc
45
25
THERMAL CHARACTERISTICS
Thermal Resistance,
Junction−to−Ambient
2
EMITTER
Unit
Collector − Emitter Voltage
BCX19LT1
BCX18LT1
Collector Current − Continuous
1
BASE
1
xx M G
G
1
xx
= T2 or U1
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Publication Order Number:
BCX18LT1/D
BCX18LT1G, PNP BCX19LT1G, NPN
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
45
25
−
−
−
−
50
30
−
−
−
−
−
−
−
−
100
5.0
nAdc
mAdc
−
−
10
mAdc
100
70
40
−
−
−
600
−
−
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)
V(BR)CEO
BCX19
BCX18
Collector−Emitter Breakdown Voltage
(IC = 10 mAdc, IC = 0)
V(BR)CES
BCX19
BCX18
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0)
(VCB = 20 Vdc, IE = 0, TA = 150°C)
ICBO
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
IEBO
Vdc
Vdc
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mAdc, VCE = 1.0 Vdc)
(IC = 300 mAdc, VCE = 1.0 Vdc)
(IC = 500 mAdc, VCE = 1.0 Vdc)
hFE
−
Collector−Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc)
VCE(sat)
−
−
0.62
Vdc
Base−Emitter On Voltage
(IC = 500 mAdc, VCE = 1.0 Vdc)
VBE(on)
−
−
1.2
Vdc
ORDERING INFORMATION
Device
BCX18LT1G
BCX19LT1G
Specific Marking
Package
Shipping†
T2
SOT−23
(Pb−Free)
3000 / Tape & Reel
U1
SOT−23
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
BCX18LT1G, PNP BCX19LT1G, NPN
hFE, DC CURRENT GAIN
1000
VCE = 1 V
TJ = 25°C
100
10
0.1
1.0
10
100
IC, COLLECTOR CURRENT (mA)
1000
1.0
1.0
TJ = 25°C
TA = 25°C
0.8
0.6
IC = 10 mA
0.4
100 mA
300 mA
500 mA
VBE(on) @ VCE = 1 V
0.6
0.4
0.2
0.2
VCE(sat) @ IC/IB = 10
0
0.01
0
0.1
1
IB, BASE CURRENT (mA)
10
100
1
Figure 2. Saturation Region
10
100
IC, COLLECTOR CURRENT (mA)
1000
Figure 3. “On” Voltages
100
+1
qVC for VCE(sat)
0
C, CAPACITANCE (pF)
θV, TEMPERATURE COEFFICIENTS (mV/ °C)
VBE(sat) @ IC/IB = 10
0.8
V, VOLTAGE (VOLTS)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 1. DC Current Gain
-1
qVB for VBE
-2
1
10
100
IC, COLLECTOR CURRENT (mA)
Cib
10
Cob
1
0.1
1000
Figure 4. Temperature Coefficients
1
10
VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Capacitances
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3
100
BCX18LT1G, PNP BCX19LT1G, NPN
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
D
SEE VIEW C
3
HE
E
c
1
2
e
b
DIM
A
A1
b
c
D
E
e
L
L1
HE
0.25
q
A
L
A1
L1
VIEW C
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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PUBLICATION ORDERING INFORMATION
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For additional information, please contact your local
Sales Representative
BCX18LT1/D