GaAs SP3T 2.5V High Power Switch DC - 2.5 GHz Preliminary Features GND 100 pF ANT Low Harmonic Knee Voltage < 2.5V Low Harmonics > 65 dBc at +34 dBm & 1 GHz Low Insertion Loss 0.45 dB at 1 GHz High Isolation 18.5 dB at 2 GHz FQFP 12-lead 3x3mm Low Profile Package 0.5 micron GaAs pHEMT Process GND • • • • • • Functional Schematic PIN 1 V3 V1 Description RF3 RF1 M/A-COM’s MASWSS0033 is a GaAs PHEMT MMIC SP3T high power switch in a low cost miniature FQFP 12-lead 3x3mm thin profile package. This package represents a lower profile than standard FQFP style, featuring a 0.8mm maximum thickness. 100 pF 100 pF V2 RF2 100 pF The MASWSS0033 is ideally suited for applications where high power, low control voltage, low insertion loss, high isolation, small size and low cost are required. Typical applications are for GSM and DCS handset systems that connect separate transmit and receive functions to a common antenna, as well othe handset and related applications. This part can be used in all systems operating up to 2.5 GHz requiring high power at low control voltage. GND GND GND MASWSS0033 Feb 12 2002 Pin Configuration PIN No. PIN Name Description 1 V3 Control 3 2 RF3 RF Port 3 3 GND RF Ground 4 GND RF Ground 5 RF2 RF Port 2 6 V2 Control 2 Absolute Maximum 7 GND RF Ground 8 RF1 RF Port 1 Max Input Power (0.5 - 2.5 GHz, 2.5V Control) +38 dBm 9 V1 Control 1 Operating Voltage +8.5 volts 10 GND RF Ground Operating Temperature -40 oC to +85 oC 11 ANT Antenna Port Storage Temperature -65 oC to +150 oC 12 GND RF Ground 13 GND (paddle) RF Ground The MASWSS0033 is fabricated using a 0.5 micron gate length GaAs PHEMT process. The process features full passivation for performance and reliability. Absolute Maximum Ratings 1 Parameter 1. Exceeding any one or combination of these limits may cause permanent damage. GaAs SP3T 2.5V High Power Switch MASWSS0033 V 1.04 Parameter Test Conditions Units Insertion Loss DC – 1 GHz 1 – 2 GHz 2 - 2.5 GHz dB dB dB Isolation DC – 1 GHz 1 – 2 GHz 2 - 2.5 GHz dB dB dB Return Loss DC – 2.5 GHz dB 20 P1dB Vc = 0V/2.5V dBm 38 Harmonic 1 GHz, PIN = +34 dBm, Vc = 0V/2.5V dBc 65 3rd Harmonic 1 GHz, PIN = +34 dBm, Vc = 0V/2.5V dBc 65 10% to 90% RF, 90% to 10% RF µS 1 Two Tone +22 dBm, 1 MHz Spacing, 820 MHz, dBm 59 Two Tone +19 dBm, 1 MHz Spacing, 1950 MHz, dBm 57 Two Tones +22 dBm @ 820 & 821 MHz, One Tone –27 dBm @ 865 MHz dBm -108 Two Tones +17 dBm @ 1950 & 1951 MHz, One Tone –27 dBm @ 1870 MHz dBm TBD 50% control to 90% RF, and 50% control to 10% RF µS 1 In Band mV 10 |Vc| = 2.5V uA nd 2 Trise, Tfall Cross Modulation ANT - CELL3 ANT - PCS3 Cross Modulation ANT - CELL ANT - PCS Ton, Toff Transients Gate Leakage Min. 23 18 15 Typ. Max. 0.5 0.6 0.8 0.65 0.8 1.0 25 18.5 16 100 2. Insertion Loss can be optimized by varying the DC Blocking Capacitor value, ie. 1000 pF for 100 MHz - 500 MHz, 100 pF for 0.5 GHz - 2.5 GHz. 3. IP3 slope versus input power is approximately 1.5:1. Truth Table 4 V1 V2 V3 ANT– RF1 ANT - RF2 ANT - RF3 +2.5 to +5V 0 + 0.2V 0 + 0.2V On Off Off 0 + 0.2V +2.5 to +5V 0 + 0.2V Off On Off 0 + 0.2V 0 + 0.2V +2.5 to +5V Off Off On 4. External DC blocking capacitors are required on all RF ports 2 Specifications subject to change without notice. North America: Tel. (800) 366-2266, Fax (800) 618-8883 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. GaAs SP3T 2.5V High Power Switch MASWSS0033 V 1.04 Typical Performance Curves Insertion Loss vs. Frequency, 25 oC, 100 pF Isolation vs. Frequency, 25 oC, 100 pF 0 0 -0.1 -5 -0.2 -10 -0.3 -0.4 -15 -0.5 -20 -0.6 -0.7 -25 -0.8 -30 -0.9 -35 -1 0.5 1 1.5 2 2.5 Frequency (GHz) 0.5 1 1.5 Frequency (GHz) 2 2.5 Harmonic Rejection vs. Frequency, 25 oC, 100 pF -60 Pin = +34 dBm @ 1 GHz -65 -70 3rd Harmonic -75 2nd Harmonic -80 -85 2 3 4 5 Vctrl (V) 3 Specifications subject to change without notice. North America: Tel. (800) 366-2266, Fax (800) 618-8883 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. GaAs SP3T 2.5V High Power Switch MASWSS0033 V 1.04 FQFP 12-lead 3x3 mm Low Profile 4 Specifications subject to change without notice. North America: Tel. (800) 366-2266, Fax (800) 618-8883 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. GaAs SP3T 2.5V High Power Switch MASWSS0033 V 1.04 Handling Procedures The following precautions should be observed to avoid damage: Static Sensitivity Gallium Arsenide Integrated Circuits are ESD sensitive and can be damaged by static electricity. Proper ESD techniques should be used when handling these devices. Ordering Information Part Number Package MASWSS0033 FQFP-N 12-lead Thin Plastic Package MASWSS0033TR 1000 piece reel MASWSS0033SMB Sample Test Board 5 Specifications subject to change without notice. North America: Tel. (800) 366-2266, Fax (800) 618-8883 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information.