GaAs SP2T 2.5V High Power Switch DC - 3 GHz Preliminary MASWSS0006 Jan 17 2002 Features • • • • • • Functional Schematic Low Voltage Operation 2.5V Low Harmonics > 65 dBc at +34 dBm & 1 GHz Low Insertion Loss 0.45 dB at 1 GHz High Isolation 18.5 dB at 2 GHz Miniature SOT-26 Package 0.5 micron GaAs pHEMT Process PIN 6 PIN 1 RF1 V1 GND RFC RF2 V2 39 pF Description 39 pF M/A-COM’s MASWSS0006 is a GaAs PHEMT MMIC single pole two throw (SP2T) high power switch in a low cost miniature SOT-26 package. The MASWSS0006 is ideally suited for applications where high power, low control voltage, low insertion loss, high isolation, small size and low cost are required. Typical applications are for GSM and DCS handset systems that connect separate transmit and receive functions to a common antenna, as well as other related handset and general purpose applications. This part can be used in all systems operating up to 3 GHz requiring high power at low control voltage. The MASWSS0006 is fabricated using a 0.5 micron gate length GaAs PHEMT process. The process features full passivation for performance and reliability. Absolute Maximum Ratings 1 Parameter Absolute Maximum Max Input Power (0.5 - 3 GHz, 2.5V Control) +38 dBm Operating Voltage +8.5 volts Operating Temperature -40 oC to +85 oC Storage Temperature -65 oC to +150 oC 1. Exceeding any one or combination of these limits may cause permanent damage. 39 pF Pin Configuration PIN No. PIN Name Description 1 RF1 RF Port 1 2 GND RF Ground 3 RF2 RF Port 2 4 V1 Control 1 5 RFC RF Common Port 6 V2 Control 2 GaAs SP2T 2.5V High Power Switch MASWSS0006 V 1.00 Electrical Specifications: TA = 25°C, Z0 = 50Ω 2 Parameter Test Conditions Units Insertion Loss DC – 1 GHz 1 – 2 GHz 2 - 3 GHz dB dB dB Isolation DC – 1 GHz 1 – 2 GHz 2 - 3 GHz dB dB dB Return Loss DC – 2 GHz 2 - 3 GHz dB dB 20 16 Two Tone +21 dBm, 1 MHz Spacing, > 50 MHz Vc = 0V/3V dBm 64 Vc = 0V/2.5V dBm 38 2nd Harmonic 1 GHz, PIN = +34 dBm, Vc = 0V/2.5V dBc 65 3rd Harmonic 1 GHz, PIN = +34 dBm, Vc = 0V/2.5V dBc 65 10% to 90% RF, 90% to 10% RF uS 1 50% control to 90% RF, and 50% control to 10% RF uS 1 In Band mV 10 |Vc| = 2.5V uA IP3 P1dB Trise, Tfall Ton, Toff Transients Gate Leakage Min. 23 17.5 Typ. Max. 0.45 0.55 0.65 0.65 0.75 24.5 18.5 14 100 2. Insertion Loss can be optimized by varying the DC Blocking Capacitor value, ie. 1000 pF for 100 MHz - 500 MHz, 39 pF for 0.5 GHz - 3 GHz. Truth Table 3 V1 V2 ANT– RF1 ANT - RF2 +2.5 to +5V 0 + 0.2V On Off 0 + 0.2V +2.5 to +5V Off On 3. External DC blocking capacitors are required on all RF ports 2 Specifications subject to change without notice. North America: Tel. (800) 366-2266, Fax (800) 618-8883 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. GaAs SP2T 2.5V High Power Switch MASWSS0006 V 1.00 Typical Performance Curves Insertion Loss vs. Frequency, 25 oC, 39 pF Isolation vs. Frequency, 25 oC, 39 pF 0 0 -0.1 -5 -0.2 -10 -0.3 -0.4 -15 -0.5 -20 -0.6 -0.7 -25 -0.8 -30 -0.9 -1 -35 0.5 1 1.5 2 2.5 3 Frequency (GHz) 0.5 1 1.5 2 2.5 3 Frequency (GHz) Harmonic Rejection vs. Control Voltage, 25 oC, 39 pF -60 Pin = +34 dBm @ 1 GHz -65 -70 3rd Harmonic -75 -80 -85 2nd Harmonic -90 2.2 2.4 2.6 2.8 3 Frequency (GHz) 3 Specifications subject to change without notice. North America: Tel. (800) 366-2266, Fax (800) 618-8883 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. GaAs SP2T 2.5V High Power Switch MASWSS0006 V 1.00 SOT-26 Plastic Package 4 Specifications subject to change without notice. North America: Tel. (800) 366-2266, Fax (800) 618-8883 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. GaAs SP2T 2.5V High Power Switch MASWSS0006 V 1.00 Handling Procedures The following precautions should be observed to avoid damage: Static Sensitivity Gallium Arsenide Integrated Circuits are ESD sensitive and can be damaged by static electricity. Proper ESD techniques should be used when handling these devices. Ordering Information Part Number Package MASWSS0006 SOT-26 6-lead Plastic Package MASWSS0006TR 1000 piece reel MASWSS0006SMB Sample Test Board 5 Specifications subject to change without notice. North America: Tel. (800) 366-2266, Fax (800) 618-8883 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information.