Bulletin PD-20487 12/01 UFB120FA20 Insulated Ultrafast Rectifier Module Features • • • • • • • • • • trr = 28ns Two Fully Independent Diodes Ceramic Fully Insulated Package (VISOL = 2500V AC) Ultrafast Reverse Recovery Ultrasoft Reverse Recovery Current Shape Low Forward Voltage Optimized for Power Conversion: Welding and Industrial SMPS Applications Industry Standard Outline Plug-in Compatible with other SOT-227 Packages Easy to Assemble Direct Mounting to Heatsink IF(AV) = 120A @ TC = 90°C VR = 200V Description The UFB120FA20 insulated modules integrate two state-of-the-art International Rectifier's Ultrafast recovery rectifiers in the compact, industry standard SOT-227 package. The planar structure of the diodes, and the platinum doping lifetime control, provide a Ultrasoft recovery current shape, together with the best overall performance, ruggedness and reliability characteristics. These devices are thus intended for high frequency applications in which the switching energy is designed not to be predominant portion of the total energy, such as in the output rectification stage of Welding machines, SMPS, DCDC converters. Their extremely optimized stored charge and low recovery current reduce both over dissipation in the switching elements (and snubbers) and EMI/ RFI. Absolute Maximum Ratings Parameters Max Units 200 V 60 A VR Cathode-to-Anode Voltage IF Continuous Forward Current, TC = 90°C Per Diode IFSM Single Pulse Forward Current, TC = 25°C Per Diode 850 PD Max. Power Dissipation, TC = 90°C Per Module 110 V ISOL RMS Isolation Voltage, Any Terminal to Case, t = 1 min TJ, TSTG Operating Junction and Storage Temperatures W 2500 V - 55 to 150 °C Case Styles UFB120FA20 SOT-227 www.irf.com 1 4 2 3 1 UFB120FA20 Bulletin PD-20487 12/01 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) per diode Parameters Min Typ Max Units Test Conditions VBR Cathode Anode Breakdown Voltage 200 VFM Forward Voltage - - V IR = 100µA - 0.96 1.13 V IF = 60A - 0.79 0.90 V IF = 60A, TJ = 150°C VR = VR Rated IRM Reverse Leakage Current - - 100 µA CT Junction Capacitance - - 1.0 mA TJ = 150°C, VR = VR Rated - 105 - pF VR = 200V Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified) per diode Parameters trr IRRM Qrr Min Typ Max Units Test Conditions Reverse Recovery Time Peak Recovery Current Reverse Recovery Charge - - 28 ns - 32 - TJ = 25°C - 64 - TJ = 125°C - 4.0 - - 8.2 - - 64 - - 263 - A IF = 1.0A, diF/dt = 200A/µs, VR = 30V IF = 50A TJ = 25°C VR = 100V diF /dt = 200A/µs TJ = 125°C nC TJ = 25°C TJ = 125°C Thermal - Mechanical Characteristics Parameters RthJC 2 Junction to Case Min Typ Max Units K/W Single Diode Conducting - 0.8 1.1 Both Diodes Conducting - 0.4 0.55 RthCS Case to Heat Sink, Flat, Greased Surface - 0.05 - Wt Weight - 30 - g T Mounting Torque - 1.3 - (N*m) www.irf.com UFB120FA20 Bulletin PD-20487 12/01 1000 100 Reverse Current - I R (µA) 100 125˚C 1 0.1 25˚C 0.01 0.001 0 Tj = 150˚C 50 100 150 Reverse Voltage - VR (V) 200 Fig. 2 - Typical Values Of Reverse Current Vs. Reverse Voltage Tj = 125˚C 1000 Tj = 25˚C Tj = 25˚C Junction Capacitance - C T (pF) Instantaneous Forward Current - I F (A) Tj = 150˚C 10 10 100 1 0.2 0.6 1 1.4 1 1.8 Forward Voltage Drop - VFM (V) 10 100 1000 Reverse Voltage - VR (V) Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage Thermal Impedance Z thJC (°C/W) Fig. 1 - Typical Forward Voltage Drop Characteristics (per diode) 10 1 Single Pulse (Thermal Impedance) PDM t1 0.1 t2 Notes: 1. Duty factor D = t1/ t2 2. Peak Tj = Pdm x ZthJC + Tc 0.01 0.001 0.01 0.1 t 1, Rectangular Pulse Duration (Seconds) 1 10 Fig. 4 - Max. Thermal Impedance Z thJC (per diode) www.irf.com 3 UFB120FA20 Bulletin PD-20487 12/01 60 140 Average Power Loss ( Watts ) Allowable Case Temperature (°C) 150 130 DC 120 110 100 Square wave (D = 0.50) 80% Rated Vr applied 90 see note (3) 80 0 10 20 30 40 50 60 40 DC 30 D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50 20 10 0 70 0 10 20 30 40 50 60 70 Average Forward Current - IF(AV) (A) Average Forward Current - I F(AV) (A) Fig. 5 - Max. Allowable Case Temperature Vs. Average Forward Current (per diode) Fig. 6 - Forward Power Loss (per diode) 80 70 60 800 If = 50A Vrr = 200V 700 500 Qrr ( nC ) 40 Tj = 25˚C 300 20 200 10 100 diF /dt (A/µs ) 1000 Fig. 7 - Typical Reverse Recovery time vs. di F /dt Tj = 125˚C 400 30 0 100 If = 50A Vrr = 200V 600 Tj = 125˚C 50 trr ( ns ) RMS Limit 50 0 100 Tj = 25˚C diF /dt (A/µs ) 1000 Fig. 8 - Typical Stored Charge vs. di F /dt (3) Formula used: TC = TJ - (Pd + PdREV) x RthJC ; Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6); PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = 80% rated VR 4 www.irf.com UFB120FA20 Bulletin PD-20487 12/01 3 t rr IF VR = 200V tb ta 0 2 0.01 Ω 4 0.5 I RRM di(rec)M/dt L = 70µH 5 0.75 I RRM D.U.T. dif/dt ADJUST Q rr I RRM 1 di f /dt D G IRFP250 S Fig. 9 - Reverse Recovery Parameter Test Circuit 1. diF/dt - Rate of change of current through zero crossing 2. IRRM - Peak reverse recovery current 3. trr - Reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current 4. Qrr - Area under curve defined by t rr and IRRM Q rr = t rr x I RRM 2 5. di (rec) M / dt - Peak rate of change of current during t b portion of t rr Fig. 10 - Reverse Recovery Waveform and Definitions SOT-227 Package Details LEAD ASSIGNMENTS FRED Notes: 1. Dimensioning & tolerancing per ANSI Y14.5M-1982. 2. Controlling dimension: millimeter. 3. Dimensions are shown in millimeters (inches). www.irf.com 5 UFB120FA20 Bulletin PD-20487 12/01 SOT-227 Package Details Tube QUANTITIES PER TUBE IS 10 M4 SCREW AND WASHER INCLUDED Ordering Information Table Device Code UF B 120 F A 20 1 2 3 4 5 6 1 - ULTRAFAST RECTIFIER 2 - Ultrafast Pt diffused 3 - Current Rating (120 = 120A) 4 - Circuit Configuration (2 separate Diodes, parallel pin-out) 5 - Package Indicator (SOT-227 Standard Isolated Base) 6 - Voltage Rating (20 = 200V) Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 12/01 6 www.irf.com