IRF UFB120FA20

Bulletin PD-20487 12/01
UFB120FA20
Insulated Ultrafast Rectifier Module
Features
•
•
•
•
•
•
•
•
•
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trr = 28ns
Two Fully Independent Diodes
Ceramic Fully Insulated Package (VISOL = 2500V AC)
Ultrafast Reverse Recovery
Ultrasoft Reverse Recovery Current Shape
Low Forward Voltage
Optimized for Power Conversion: Welding and Industrial SMPS Applications
Industry Standard Outline
Plug-in Compatible with other SOT-227 Packages
Easy to Assemble
Direct Mounting to Heatsink
IF(AV) = 120A
@ TC = 90°C
VR = 200V
Description
The UFB120FA20 insulated modules integrate two state-of-the-art International Rectifier's Ultrafast recovery rectifiers
in the compact, industry standard SOT-227 package. The planar structure of the diodes, and the platinum doping lifetime control, provide a Ultrasoft recovery current shape, together with the best overall performance, ruggedness and
reliability characteristics.
These devices are thus intended for high frequency applications in which the switching energy is designed not to be
predominant portion of the total energy, such as in the output rectification stage of Welding machines, SMPS, DCDC converters. Their extremely optimized stored charge and low recovery current reduce both over dissipation in the
switching elements (and snubbers) and EMI/ RFI.
Absolute Maximum Ratings
Parameters
Max
Units
200
V
60
A
VR
Cathode-to-Anode Voltage
IF
Continuous Forward Current, TC = 90°C
Per Diode
IFSM
Single Pulse Forward Current, TC = 25°C
Per Diode
850
PD
Max. Power Dissipation, TC = 90°C
Per Module
110
V ISOL
RMS Isolation Voltage, Any Terminal to Case, t = 1 min
TJ, TSTG
Operating Junction and Storage Temperatures
W
2500
V
- 55 to 150
°C
Case Styles
UFB120FA20
SOT-227
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1
4
2
3
1
UFB120FA20
Bulletin PD-20487 12/01
Electrical Characteristics @ TJ = 25°C (unless otherwise specified) per diode
Parameters
Min Typ Max Units Test Conditions
VBR
Cathode Anode
Breakdown Voltage
200
VFM
Forward Voltage
-
-
V
IR = 100µA
-
0.96 1.13
V
IF = 60A
-
0.79 0.90
V
IF = 60A, TJ = 150°C
VR = VR Rated
IRM
Reverse Leakage Current
-
-
100
µA
CT
Junction Capacitance
-
-
1.0
mA
TJ = 150°C, VR = VR Rated
-
105
-
pF
VR = 200V
Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified) per diode
Parameters
trr
IRRM
Qrr
Min Typ Max Units Test Conditions
Reverse Recovery Time
Peak Recovery Current
Reverse Recovery Charge
-
-
28
ns
-
32
-
TJ = 25°C
-
64
-
TJ = 125°C
-
4.0
-
-
8.2
-
-
64
-
-
263
-
A
IF = 1.0A, diF/dt = 200A/µs, VR = 30V
IF = 50A
TJ = 25°C
VR = 100V
diF /dt = 200A/µs
TJ = 125°C
nC
TJ = 25°C
TJ = 125°C
Thermal - Mechanical Characteristics
Parameters
RthJC
2
Junction to Case
Min
Typ
Max
Units
K/W
Single Diode Conducting
-
0.8
1.1
Both Diodes Conducting
-
0.4
0.55
RthCS
Case to Heat Sink, Flat, Greased Surface
-
0.05
-
Wt
Weight
-
30
-
g
T
Mounting Torque
-
1.3
-
(N*m)
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UFB120FA20
Bulletin PD-20487 12/01
1000
100
Reverse Current - I R (µA)
100
125˚C
1
0.1
25˚C
0.01
0.001
0
Tj = 150˚C
50
100
150
Reverse Voltage - VR (V)
200
Fig. 2 - Typical Values Of Reverse Current
Vs. Reverse Voltage
Tj = 125˚C
1000
Tj = 25˚C
Tj = 25˚C
Junction Capacitance - C T (pF)
Instantaneous Forward Current - I F (A)
Tj = 150˚C
10
10
100
1
0.2
0.6
1
1.4
1
1.8
Forward Voltage Drop - VFM (V)
10
100
1000
Reverse Voltage - VR (V)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
Thermal Impedance Z
thJC
(°C/W)
Fig. 1 - Typical Forward Voltage Drop Characteristics
(per diode)
10
1
Single Pulse
(Thermal Impedance)
PDM
t1
0.1
t2
Notes:
1. Duty factor D = t1/ t2
2. Peak Tj = Pdm x ZthJC + Tc
0.01
0.001
0.01
0.1
t 1, Rectangular Pulse Duration (Seconds)
1
10
Fig. 4 - Max. Thermal Impedance Z thJC (per diode)
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UFB120FA20
Bulletin PD-20487 12/01
60
140
Average Power Loss ( Watts )
Allowable Case Temperature (°C)
150
130
DC
120
110
100 Square wave (D = 0.50)
80% Rated Vr applied
90 see note (3)
80
0
10
20
30
40
50
60
40
DC
30
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
20
10
0
70
0
10
20
30
40
50
60
70
Average Forward Current - IF(AV) (A)
Average Forward Current - I F(AV) (A)
Fig. 5 - Max. Allowable Case Temperature
Vs. Average Forward Current (per diode)
Fig. 6 - Forward Power Loss (per diode)
80
70
60
800
If = 50A
Vrr = 200V
700
500
Qrr ( nC )
40
Tj = 25˚C
300
20
200
10
100
diF /dt (A/µs )
1000
Fig. 7 - Typical Reverse Recovery time vs. di F /dt
Tj = 125˚C
400
30
0
100
If = 50A
Vrr = 200V
600
Tj = 125˚C
50
trr ( ns )
RMS Limit
50
0
100
Tj = 25˚C
diF /dt (A/µs )
1000
Fig. 8 - Typical Stored Charge vs. di F /dt
(3) Formula used: TC = TJ - (Pd + PdREV) x RthJC ;
Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6);
PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = 80% rated VR
4
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UFB120FA20
Bulletin PD-20487 12/01
3
t rr
IF
VR = 200V
tb
ta
0
2
0.01 Ω
4
0.5 I RRM
di(rec)M/dt
L = 70µH
5
0.75 I RRM
D.U.T.
dif/dt
ADJUST
Q rr
I RRM
1
di f /dt
D
G
IRFP250
S
Fig. 9 - Reverse Recovery Parameter Test
Circuit
1. diF/dt - Rate of change of current through
zero crossing
2. IRRM - Peak reverse recovery current
3. trr - Reverse recovery time measured from
zero crossing point of negative going IF to
point where a line passing through 0.75 IRRM
and 0.50 IRRM extrapolated to zero current
4. Qrr - Area under curve defined by
t rr and IRRM
Q rr =
t rr x I
RRM
2
5. di (rec) M / dt - Peak rate of change
of current during t b portion of t rr
Fig. 10 - Reverse Recovery Waveform and Definitions
SOT-227 Package Details
LEAD ASSIGNMENTS
FRED
Notes:
1. Dimensioning & tolerancing per ANSI Y14.5M-1982.
2. Controlling dimension: millimeter.
3. Dimensions are shown in millimeters (inches).
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UFB120FA20
Bulletin PD-20487 12/01
SOT-227 Package Details
Tube
QUANTITIES PER TUBE IS 10
M4 SCREW AND WASHER INCLUDED
Ordering Information Table
Device Code
UF
B
120
F
A
20
1
2
3
4
5
6
1
-
ULTRAFAST RECTIFIER
2
-
Ultrafast Pt diffused
3
-
Current Rating
(120 = 120A)
4
-
Circuit Configuration
(2 separate Diodes, parallel pin-out)
5
-
Package Indicator
(SOT-227 Standard Isolated Base)
6
-
Voltage Rating
(20 = 200V)
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 12/01
6
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