Bulletin PD-20740 rev. A 01/01 80EBU02 Ultrafast Soft Recovery Diode Features • Ultrafast Recovery • 175°C Operating Junction Temperature trr = 35ns IF(AV) = 80Amp VR = 200V Benefits • Reduced RFI and EMI • Higher Frequency Operation • Reduced Snubbing • Reduced Parts Count Description/ Applications These diodes are optimized to reduce losses and EMI/ RFI in high frequency power conditioning systems. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for HF welding, power converters and other applications where switching losses are not significant portion of the total losses. Absolute Maximum Ratings Max Units VR Parameters Cathode to Anode Voltage 200 V IF(AV) Continuous Forward Current, TC = 112°C 80 A IFSM Single Pulse Forward Current, TC = 25°C 800 IFRM ! Maximum Repetitive Forward Current TJ, TSTG Operating Junction and Storage Temperatures 160 - 55 to 175 °C !"Square Wave, 20kHz Case Styles PowIRtab 1 80EBU02 Bulletin PD-20740 rev. A 01/01 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameters Min Typ Max Units Test Conditions VBR, Vr Breakdown Voltage, Blocking Voltage 200 VF Forward Voltage IR Reverse Leakage Current - - V IR = 50µA - 0.98 1.13 V IF = 80A - 0.79 0.92 V IF = 80A, TJ = 175°C - - 50 µA VR = VR Rated - - 2 mA TJ = 150°C, VR = VR Rated VR = 200V CT Junction Capacitance - 89 - pF LS Series Inductance - 3.5 - nH Measured lead to lead 5mm from package body Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified) Parameters trr IRRM Qrr Reverse Recovery Time Peak Recovery Current Reverse Recovery Charge Min Typ Max Units Test Conditions - - 35 - 32 - - 52 - - 4.4 - - 8.8 - - 70 - - 240 - ns A IF = 1.0A, diF/dt = 200A/µs, VR = 30V TJ = 25°C IF = 80A TJ = 125°C VR = 160V diF /dt = 200A/µs TJ = 25°C TJ = 125°C nC TJ = 25°C TJ = 125°C Thermal - Mechanical Characteristics Parameters RthJC Thermal Resistance, Junction to Case RthCS # Thermal Resistance, Case to Heatsink Wt Weight Min Typ Max Units 0.70 K/W 5.02 g 0.2 0.18 T Mounting Torque #"Mounting Surface, Flat, Smooth and Greased 2 (oz) 1.2 2.4 N*m 10 20 lbf.in 80EBU02 Bulletin PD-20740 rev. A 01/01 1000 100 T = 175˚C T J = 175˚C 100 Reverse Current - I R (µA) Instantaneous Forward Current - I F (A) 1000 125˚C 10 1 25˚C 0.1 0.01 0.001 J 0 50 T = 125˚C 100 150 200 Reverse Voltage - VR (V) J Fig. 2 - Typical Values Of Reverse Current Vs. Reverse Voltage T = 25˚C J Junction Capacitance - C T (pF) 10000 10 T J = 25˚C 1000 1 100 10 0 0.5 1 1.5 2 2.5 1 Forward Voltage Drop - VFM (V) 10 100 1000 Reverse Voltage - VR (V) Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage Fig. 1 - Typical Forward Voltage Drop Characteristics Thermal Impedance Z thJC (°C/W) 1 0.1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 PDM t1 Single Pulse (Thermal Resistance) t2 Notes: 1. Duty factor D = t1/ t2 2. Peak Tj = Pdm x ZthJC + Tc 0.01 0.00001 0.0001 0.001 0.01 0.1 t1, Rectangular Pulse Duration (Seconds) 1 10 Fig. 4 - Max. Thermal Impedance Z thJC Characteristics 3 80EBU02 Bulletin PD-20740 rev. A 01/01 120 RMS Limit Average Power Loss ( Watts ) Allowable Case Temperature (°C) 180 160 140 DC 120 100 Square wave (D = 0.50) 80% Rated Vr applied 80 100 80 40 20 see note (3) 0 60 0 20 40 60 80 100 0 120 Average Forward Current - IF(AV) (A) 80 100 120 Vr = 160V Tj = 125˚C Tj = 25˚C 1000 800 Qrr ( nC ) 50 trr ( ns ) 60 1200 IF = 160A IF = 80A IF = 40A 60 40 IF = 160A IF = 80A IF = 40A 600 400 30 10 100 40 Fig. 6 - Forward Power Loss Characteristics 70 20 20 Average Forward Current - IF(AV) (A) Fig. 5 - Max. Allowable Case Temperature Vs. Average Forward Current 200 Vr = 160V Tj = 125˚C Tj = 25˚C di F /dt (A/µs ) 1000 Fig. 7 - Typical Reverse Recovery time vs. di F /dt (3) Formula used: TC = TJ - (Pd + PdREV) x RthJC ; Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6); PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = 80% rated VR 4 D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50 DC 60 0 100 di F /dt (A/µs ) 1000 Fig. 8 - Typical Stored Charge vs. di F /dt 80EBU02 Bulletin PD-20740 rev. A 01/01 Reverse Recovery Circuit VR = 200V 0.01 Ω L = 70µH D.U.T. di F /dt dif/dt ADJUST D IRFP250 G S Fig. 9- Reverse Recovery Parameter Test Circuit 3 trr IF tb ta 0 2 Q rr I RRM 4 0.5 I RRM di(rec)M/dt 5 0.75 I RRM 1 di fF/dt /dt 1. diF/dt - Rate of change of current through zero crossing 2. IRRM - Peak reverse recovery current 3. trr - Reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current 4. Qrr - Area under curve defined by t rr and IRRM t rr x I RRM Q rr = 2 5. di (rec) M / dt - Peak rate of change of current during t b portion of t rr Fig. 10 - Reverse Recovery Waveform and Definitions 5 80EBU02 Bulletin PD-20740 rev. A 01/01 Outline Table Dimensions in millimeters and (inches) Ordering Information Table Device Code 80 E B U 02 1 2 3 4 5 1 - Current Rating 2 - Single Diode 3 - PowIRtab 4 - Ultrafast Recovery 5 - Voltage Rating (80 = 80A) (Ultrafast/Hyperfast only) (02 = 200V) IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 01/01 6