ADVANCED
LINEAR
DEVICES, INC.
TM
e
®
EPAD
D
LE
AB
EN
ALD1121E/ALD1123E
QUAD/DUAL EPAD® PRECISION N-CHANNEL MATCHED PAIR MOSFET ARRAY
GENERAL DESCRIPTION
BENEFITS
ALD1121E/ALD1123E are monolithic quad/dual EPAD® (Electrically
Programmable Analog Device) N-channel MOSFETs with electrically
adjustable threshold (turn-on) voltage. The ALD1121E/ALD1123E are
precision matched and adjusted (e-trimmed) at the factory resulting in
quad/dual MOSFETs that are highly matched in electrical characteristics.
The ALD1123E has four (4) separate source pins. SN1, SN2 share a
common substrate pin, V-1, which has to be connected to the most
negative voltage potential. Likewise, SN3, SN4 share a common substrate
pin, V-2, which has to be connected to the negative voltage potential for
SN3, SN4. The ALD1121E has two (2) separate source pins (SN1, SN2).
Both SN1, SN2 share a common substrate, pin 4, which has to be
connected to the most negative voltage potential. For a given input voltage,
the threshold voltage of a MOSFET device determines its drain on-current,
resulting in an on-resistance characteristic that can be precisely preset and
then controlled by the input voltage very accurately.
• Precision matched electrically after
Using an ALD1121E/ALD1123E is simple and straight forward. The
MOSFETs function as n-channel MOSFETs, except that all the devices
have exceptional matching to each other in electrical characteristics. For
a given input voltage, the threshold voltage of a MOSFET device determines
its drain on-current, resulting in an on-resistance characteristic that can be
precisely preset and then controlled by the input voltage very accurately.
Since these devices are on the same monolithic chip, they also exhibit
excellent tempco matching characteristics.
ORDERING INFORMATION (“L” suffix denotes lead-free (RoHS))
Operating Temperature Range*
0°C to +70°C
-55°C to +125°C
0°C to +70°C
packaging
• Simple, elegant single-chip user option
to trim voltage/current values
• Excellent device matching characteristics
with or without additional electrical trim
• Remotely and electrically trim parameters
on circuits that are physically inaccessible
PIN CONFIGURATION
ALD1121E
PN1
1
8
SN2
7
DN2
6
GN2
5
PN2
M1
GN1
2
DN1
3
SN1,V-
M2
4
TOP VIEW
SAL, PAL, DA PACKAGES
ALD1123E
PN1
1
GN1
2
DN1
M2
M1
16
SN2
15
DN2
3
14
GN2
4
13
PN2
8-Pin SOIC
Package
8-Pin Plastic Dip
Package
8-Pin CERDIP
Package
V-1, SN1
PN4
5
12
SN3
ALD1121ESAL
ALD1121EPAL
ALD1121EDA
GN4
6
11
DN3
DN4
7
10
GN3
V-2, SN4
8
9
PN3
16-Pin SOIC
Package
16-Pin Plastic Dip
Package
16-Pin CERDIP
Package
ALD1123ESCL
ALD1123EPCL
ALD1123EDC
M4
TOP VIEW
SCL, PCL, DC PACKAGES
* Contact factory for leaded (non-RoHS) or high temperature versions.
BLOCK DIAGRAM
BLOCK DIAGRAM
ALD1121E
ALD1123E
PN1 (1)
DN1 (3)
M3
DN2 (15)
GN1(2)
PN2 (13)
DN3 (11)
PN3 (9)
DN4 (7)
PN4 (5)
PN1 (1)
DN2 (7)
DN1 (3)
GN4 (6)
GN2 (14) GN3(10)
GN2 (6)
GN1(2)
M1
~
M2
M3
~
~
M4
M1
SN1 (4)
V-1 (4)
SN2 (16)
SN3 (12)
PN2 (5)
V-2 (8)
SN4 (8)
SN1(4)
M2
V- (4)
SN2 (8)
Rev 2.0 ©2012 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, CA 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286
www.aldinc.com
These MOSFET devices have very low input currents and,
as a result, a very high input impedance (>1012 Ohm). The
gate voltage from a control source can drive many MOSFET
inputs with practically no loading effects. Used in precision
current mirror or current multiplier applications, they can
be used to provide a current source over a 100nA to 3mA
range, and with either a positive, negative, or zero tempco.
Optional EPAD Threshold Voltage Trimming by User
BENEFITS (cont.)
• Usable in environmentally sealed circuits
• No mechanical moving parts -- high G-shock
tolerance
• Improved reliability, dependability, dust and
moisture resistance
• Cost and labor savings
• Small footprint for high board density
applications
The basic EPAD MOSFET device is a monotonically
adjustable device, which means the device can normally
be e-trimmed to increase in threshold voltage and to
decrease in drain-on current as a function of a given input
bias voltage. Used as an in-circuit element for trimming or
setting a combination of voltage current and/or onresistance characteristics, it can be set up to be e-trimmed
remotely and automatically. Once e-trimmed, the set
voltage and current levels are stored indefinitely inside the
device as a nonvolatile stored charge, which is not affected
during normal operation of the device, even when power is
turned off. A given EPAD device can be adjusted many
times to continually increase its threshold voltage. A pair
of EPAD devices can also be connected differentially such
that one device is used to adjust a parameter in one
direction and the other device is used to adjust the same
parameter in the other direction.
The ALD1121E/ALD1123E can be e-trimmed with an ALD
EPAD programmer to obtain the desired voltage and
current levels. They can also be e-trimmed as an active insystem element in a user system, via user designed
interface circuitry. PN1, PN2, etc., are pins required for
optional e-trim of respective MOSFET devices. If unused,
these pins are to be connected to V- or ground. For more
information, see Application Note AN1108.
APPLICATIONS
• Precision PC-based electronic calibration
• Automated voltage trimming or setting
• Remote voltage or current adjustment of
inaccessible nodes
• PCMCIA based instrumentation trimming
• Electrically adjusted resistive load
• Temperature compensated current sources and
current mirrors
• Electrically trimmed/calibrated current sources
• Permanent precision preset voltage level shifter
• Low temperature coefficient voltage and/or current
bias circuits
• Multiple preset voltage bias circuits
• Multiple channel resistor pull-up or pull-down circuits
• Microprocessor based process control systems
• Portable data acquisition systems
• Battery operated terminals and instruments
• Remote telemetry systems
• E-trimmable gain amplifiers
• Low level signal conditioning
• Sensor and transducer bias currents
• Neural networks
ALD1121E/ALD1123E
FEATURES
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
Electrically Programmable Analog Device
Proven, non-volatile CMOS technology
Operates from 2V, 3V, 5V to 10V
Flexible basic circuit building block and design
element
Very high resolution -- average e-trim voltage
resolution of 0.1mV
Wide dynamic range -- current levels from 0.1µA
to 3000µA
Voltage adjustment range from 1.000V to 3.000V
in 0.1mV steps
Typical 10-year drift of less than 2mV
Usable in voltage mode or current mode
High input impedance -- 1012Ω
Very high DC current gain -- greater than 109
Device operating current has positive temperature
coefficient range and negative temperature
coefficient range with cross-over zero temperature
coefficient current level at 68µA
Tight matching and tracking of on-resistance
between different devices with e-trim
Very low input currents and leakage currents
Low cost, monolithic technology
Application-specific or in-system programming modes
Optional user software-controlled automation
Optional e-trim of any standard/custom configuration
Micropower operation
Available in standard PDIP, SOIC and hermetic CDIP
packages
Suitable for matched-pair balanced circuit configuration
Suitable for both coarse and fine trimming, as well as
matched MOSFET array applications
RoHS compliant
Advanced Linear Devices
2 of 14
ABSOLUTE MAXIMUM RATINGS
Supply voltage, V+ referenced to VSupply voltage, VS referenced to VDifferential input voltage range
Power dissipation
Operating temperature range SAL, PAL, SCL, PCL packages
DA, DC packages
Storage temperature range
Lead temperature, 10 seconds
CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.
-0.3V to +10.6V
±5.3V
-0.3V to +0.3V
600mW
0°C to +70°C
-55°C to +125°C
-65°C to +150°C
+260°C
OPERATING ELECTRICAL CHARACTERISTICS
TA = 25°C V+ = +5.0V unless otherwise specified
ALD1121E
Min
Typ
Parameter
Symbol
Drain to Source Voltage 1
V+
Initial Threshold Voltage 2
Vt i
0.990
E-trim V t Range
Vt
1.000
Drain - Gate Connected
Voltage Tempco
TCVDS
Initial Offset Voltage 3
VOS i
1
Tempco of VOS
TCVOS
5
Differential Threshold Voltage 4
DV t
Tempco of Differential
Threshold Voltage 4
TCDV t
0.033
Long Term Drift
∆V t /∆t
-0.02
Long Term Drift Match
∆V t /∆t
-5
Drain Source On Current
IDS(ON)
Drain Source On Current 4
IDS(ON)
Initial Zero Tempco Voltage 3
VZTC i
Zero Tempco Current
Max
Min
ALD1123E
Typ
10.0
1.000
1.010
0.990
3.000
1.000
-1.6
-0.3
0.0
+2.7
1.000
Max
10.0
V
1.010
V
3.000
V
-1.6
-0.3
0.0
+2.7
5
1
mV/°C
mV/°C
mV/°C
mV/°C
5
2.000
0.033
-0.05
-0.02
Test
Conditions
IDS = 1µA TA = 21°C
ID = 5µA
ID = 50µA
ID = 68µA
ID = 500µA
mV
µV/°C
5
2.000
Unit
VDS1 = VDS2
V
mV/°C
-0.05
mV
1000 Hours
-5
µV
1000 Hours
3.0
3.0
mA
VG =VD = 5V VS = 0V
Vt = 1.0
0.8
0.8
mA
VG =VD = 5V VS = 0V
Vt = 3.0
1.52
1.52
V
Vt = 1.000V
IZTC
68
68
µA
Initial On-Resistance 3
RON i
500
500
Ω
On-Resistance Match
∆RON
0.5
0.5
%
VGS ¡= 5V VDS = 0.1V
NOTES:
1. V+ must be the most positive supply rail and V- must be at the most negative supply rail. Source terminals other than those labeled as V- can be at
any voltage between V- and V+.
2. Initial Threshold Voltage is set at the factory. If no EPAD Vt trimming is intended by user, then this is also the final or permanent threshold voltage
value.
3. Initial and Final values are the same unless deliberately changed by user.
4. These parameters apply only when V t of one or more of the devices are to be changed by user.
ALD1121E/ALD1123E
Advanced Linear Devices
3 of 14
OPERATING ELECTRICAL CHARACTERISTICS (cont'd)
TA = 25°C V+ = +5.0V unless otherwise specified
ALD1121E
Min
Typ
Transconductance
gm
1.4
1.4
mA/V
VD = 10V,VG =Vt + 4.0
Transconductance Match
∆gm
25
25
µA/V
VD = 10V,VG =Vt + 4.0
Low Level Output
Conductance
gOL
6
6
µA/V
VG = Vt +0.5V
High Level Output
Conductance
gOH
68
68
µA/V
VG = Vt +4.0V
Drain Off Leakage Current
ID(OFF)
400
4
pA
nA
TA = 125°C
100
1
pA
nA
TA = 125°C
Input Capacitance
5
10
IGSS
CISS
Cross Talk
Relaxation Time Constant 4
tRLX
Relaxation Voltage 4
VRLX
Min
400
4
5
100
1
10
Max
Unit
Test
Conditions
Symbol
Gate Leakage Current
Max
ALD1123E
Typ
Parameter
25
25
pF
60
60
dB
2
2
-0.3
-0.3
f = 100KHz
Hours
%
1.0V ≤ Vt ≤ 3.0V
E-TRIM CHARACTERISTICS
TA = 25°C V+ = +5.0V unless otherwise specified
Parameter
Symbol
E-trim Vt Range 4
Vt
ALD1121E
Min
Typ
1.000
ALD1123E
Typ
Max
Min
3.000
1.000
Max
3.000
Unit
Test
Conditions
V
Resolution of V t
E-trim Pulse Step 4
RV t
Change in Vt Per
∆V t / N
0.1
Vp
E-trim Pulse Current 4
Ip
Pulse Frequency 4
ƒ pulse
ALD1121E/ALD1123E
0.1
0.5
0.05
E-trim Pulse 4
E-trim Pulse Voltage 4
1
11.75
12.00
1
0.5
0.05
12.25
11.75
12.00
mV
mV/ pulse
12.25
V
2
2
mA
50
50
KHZ
Advanced Linear Devices
Vt = 1.0V
Vt = 2.5V
4 of 14
TYPICAL PERFORMANCE CHARACTERISITCS
OUTPUT CHARACTERISTICS
OUTPUT CHARACTERISTICS
+1.0
TA = +25°C
DRAIN SOURCE ON CURRENT
(mA)
DRAIN SOURCE ON CURRENT
(mA)
20
VGS = +12V
15
VGS = +10V
VGS = + 8V
10
VGS = + 6V
5
VGS = + 4V
VGS = + 2V
0
TA = +25°C
VGS = +10V
0
VGS = +6V
VGS = +8V
-1.0
0
2
4
6
8
10
12
-200 -160 -120 -80 -40
DRAIN SOURCE ON VOLTAGE (V)
40
80 120 160 +200
DRAIN SOURCE ON CURRENT vs.
THRESHOLD VOLTAGE
3.0
DRAIN SOURCE ON CURRENT
(mA)
6
DRAIN SOURCE ON CURRENT
(mA)
0
DRAIN SOURCE VOLTAGE (mV)
DRAIN SOURCE ON CURRENT vs.
AMBIENT TEMPERATURE
VG = 5V
5
4
Vt = 1.0V
3
Vt = 1.5V
Vt = 2.0V
2
Vt = 2.5V
1
Vt = 3.0V
-50
-25
0
25
50
75
100
TA = +25°C
VDS = +5.0V
VGS = +5V
VGS = +4V
2.0
VGS = +3V
1.0
VGS = +2V
VGS = +1V
0
0
0
125
0.5
1.0
1.5
2.0
2.5
3.0
3.5
AMBIENT TEMPERATURE (°C)
THRESHOLD VOLTAGE (V)
TRANSCONDUCTANCE vs.
THRESHOLD VOLTAGE
HIGH LEVEL OUTPUT CONDUCTANCE
vs.THRESHOLD VOLTAGE
2.0
75
HIGH LEVEL OUTPUT
CONDUCTANCE (µA/V)
TA = +25°C
TRANSCONDUCTANCE
( mA/V)
VGS = +12V
1.5
1.0
5.0
VGS = Vt + 4.0V
VDS = 10V
TA = +25°C
70
60
VGS = Vt + 4.0V
VDS = 5.0V
50
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
THRESHOLD VOLTAGE (V)
ALD1121E/ALD1123E
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
THRESHOLD VOLTAGE (V)
Advanced Linear Devices
5 of 14
TYPICAL PERFORMANCE CHARACTERISTICS (cont.)
LOW LEVEL OUTPUT CONDUCTANCE
vs. AMBIENT TEMPERATURE
THRESHOLD VOLTAGE vs.
AMBIENT TEMPERATURE
12
4.0
ID = 1.0µA
LOW LEVEL OUTPUT
CONDUCTANCE(µA/V)
THRESHOLD VOTAGE
(V)
VDS = VGS
Vt = 3.0V
3.0
Vt = 2.5V
Vt = 2.0V
2.0
Vt = 1.5V
1.0
Vt = 1.0V
8
6
4
2
0
-25
0
25
50
75
100
-25
50
75
125
100
TRANSCONDUCTANCE vs.
AMBIENT TEMPERATURE
DRAIN OFF LEAKAGE CURRENT IDS
vs. AMBIENT TEMPERATURE
1.5
1.0
0.5
0
-25
0
25
50
75
100
600
500
400
300
IDS
200
100
0
-50
125
-25
HIGH LEVEL OUTPUT CONDUCTANCE
vs. AMBIENT TEMPERATURE
VGS = Vt + 4.0V
VDS = 5.0V
80
70
60
50
40
-25
0
25
50
75
50
75
100
125
100
10
TA = +25°C
5
VGS = Vt + 0.5V
VDS = 5.0V
0
125
AMBIENT TEMPERATURE (°C)
ALD1121E/ALD1123E
25
LOW LEVEL OUTPUT CONDUCTANCE
vs. THRESHOLD VOLTAGE
LOW LEVEL CURRENT OUTPUT
CONDUCTANCE (µA/V)
100
90
0
AMBIENT TEMPERATURE (°C)
AMBIENT TEMPERATURE (°C)
HIGH LEVEL OUTPUT
CONDUCTANCE (mA/V)
25
AMBIENT TEMPERATURE (°C)
2.0
-50
0
AMBIENT TEMPERATURE (°C)
2.5
-50
-50
125
DRAIN OFF LEAKAGE CURRENT (pA)
-50
TRANSCONDUCTANCE
(mA/V)
VGS = Vt + 0.5V
VDS = 5.0V
10
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
THRESHOLD VOTAGE (V)
Advanced Linear Devices
6 of 14
TYPICAL PERFORMANCE CHARACTERISTICS (cont.)
DRAIN SOURCE ON CURRENT, BIAS
CURRENT vs. AMBIENT TEMPERATURE
100
5
DRAIN SOURCE ON CURRENT
( µA)
DRAIN SOURCE ON CURRENT
(mA)
DRAIN SOURCE ON CURRENT, BIAS
CURRENT vs. AMBIENT TEMPERATURE
-55°C
4
-25°C
3
0°C
2
1
70°C
0
0
1
2
3
125°C
4
Zero Temperature
Coefficient (ZTC)
{
{
Vt
= 1.0V
{
Vt
= 1.2V
- 25°C
Vt
= 1.4V
- 25°C
- 25°C
0
1.0
5
1.4
1.2
1.8
1.6
2.0
GATE AND DRAIN SOURCE VOLTAGE
(VGS = VDS) (V)
DRAIN SOURCE ON CURRENT, BIAS
CURRENT vs. ON - RESISTANCE
10000
DRAIN SOURCE ON CURRENT,
BIAS CURRENT (µA)
CHANGE IN DIFFERENTIAL
THRESHOLDVOLTAGE (mV)
125°C
50
CHANGE IN DIFFERENTIAL THRESHOLD
VOLTAGE vs. AMBIENT TEMPERATURE
REPRESENTATIVE UNITS
+6
+4
+2
0
-2
-4
-6
-8
VDS = RON • IDS(ON)
VGS = +0.9V to +5.0V
1000
VDS = 5.0V
100
D
VDS
10
IDS(ON)
VGS
1.0
S
VDS = 0.5V
0.1
-10
-50
-25
0
50
75
100
10
100
1000
DRAIN SOURCE ON CURRENT vs.
OUTPUT VOLTAGE
VDS = 0.5V
TA = +125°C
3
VDS = 0.5V
TA = +25°C
VDS = 5V
TA = +25°C
1
VDS = 5V
VDS = RON • IDS(ON)
TA = +125°C
1
10
100
1000
DRAIN SOURCE ON CURRENT
(mA)
IDS(ON)
0
Vt = 1.000V
VDS = VGS
4
TA = -55°C
3
TA = 0°C
2
TA = +50°C
1
TA = +125°C
0
10000
0
1
2
3
4
5
OUTPUT VOLTAGE (V)
DRAIN SOURCE ON CURRENT (µA)
ALD1121E/ALD1123E
10000
5
VDS
S
0.1
1.0
GATE SOURCE VOLTAGE vs. DRAIN
SOURCE ON CURRENT
VGS
2
0.1
125
ON - RESISTANCE (KΩ)
D
4
25
AMBIENT TEMPERATURE (°C)
5
GATE SOURCE VOLTAGE (V)
ZTC
125°C
125°C
GATE AND DRAIN SOURCE VOLTAGE
(VGS = VDS) (V)
+10
+8
ZTC
Advanced Linear Devices
7 of 14
TYPICAL PERFORMANCE CHARACTERISTICS (cont.)
OFFSET VOLTAGE vs.
AMBIENT TEMPERATURE
GATE LEAKAGE CURRENT
vs. AMBIENT TEMPERATURE
OFFSET VOLTAGE (mV)
3
GATE LEAKAGE CURRENT (pA)
4
REPRESENTATIVE UNITS
2
1
0
-1
-2
-3
600
500
400
300
200
IGSS
100
-4
0
-50
-25
0
25
50
75
100
125
-50
AMBIENT TEMPERATURE (°C)
VGS
DRAIN- GATE DIODE CONNECTED
VOLTAGE TEMPCO (mV/ °C )
GATE SOURCE VOLTAGE (V)
+125°C
VDS
IDS(ON)
S
0.0V ≤ VDS ≤ 5.0V
3.0
+25°C
2.0
1.0
0.1
1
10
100
50
75
100
125
1000
5
-55°C ≤ TA ≤ +125°C
2.5
0
-2.5
-5
10000
1
10
100
1000
DRAIN SOURCE ON CURRENT (µA)
ON - RESISTANCE (KΩ)
ALD1121E/ALD1123E
25
DRAIN - GATE DIODE CONNECTED VOLTAGE
TEMPCO vs. DRAIN SOURCE ON CURRENT
5.0
4.0
0
AMBIENT TEMPERATURE (°C)
GATE SOURCE VOLTAGE
vs. ON - RESISTANCE
D
-25
Advanced Linear Devices
8 of 14
SOIC-8 PACKAGE DRAWING
8 Pin Plastic SOIC Package
E
Millimeters
Dim
S (45°)
D
A
Min
1.35
Max
1.75
Min
0.053
Max
0.069
A1
0.10
0.25
0.004
0.010
b
0.35
0.45
0.014
0.018
C
0.18
0.25
0.007
0.010
D-8
4.69
5.00
0.185
0.196
E
3.50
4.05
0.140
0.160
1.27 BSC
e
A
A1
e
Inches
0.050 BSC
H
5.70
6.30
0.224
0.248
L
0.60
0.937
0.024
0.037
ø
0°
8°
0°
8°
S
0.25
0.50
0.010
0.020
b
S (45°)
H
L
ALD1121E/ALD1123E
C
ø
Advanced Linear Devices
9 of 14
PDIP-8 PACKAGE DRAWING
8 Pin Plastic DIP Package
Millimeters
E
E1
D
S
A2
A1
e
b
A
L
Dim
Min
Max
Min
Max
A
3.81
5.08
0.105
0.200
A1
0.38
1.27
0.015
0.050
A2
1.27
2.03
0.050
0.080
b
0.89
1.65
0.035
0.065
b1
0.38
0.51
0.015
0.020
c
0.20
0.30
0.008
0.012
D-8
9.40
11.68
0.370
0.460
E
5.59
7.11
0.220
0.280
E1
7.62
8.26
0.300
0.325
e
2.29
2.79
0.090
0.110
e1
7.37
7.87
0.290
0.310
L
2.79
3.81
0.110
0.150
S-8
1.02
2.03
0.040
0.080
0°
15°
0°
15°
ø
b1
Inches
c
e1
ALD1121E/ALD1123E
ø
Advanced Linear Devices
10 of 14
CERDIP-8 PACKAGE DRAWING
8 Pin CERDIP Package
E E1
Millimeters
D
A1
s
A
L
L2
b
b1
e
L1
Min
Inches
Dim
A
3.55
Max
5.08
Min
0.140
Max
0.200
A1
1.27
2.16
0.050
0.085
b
0.97
1.65
0.038
0.065
b1
0.36
0.58
0.014
0.023
C
0.20
0.38
0.008
0.015
D-8
--
10.29
--
0.405
E
5.59
7.87
0.220
0.310
E1
7.73
8.26
0.290
0.325
e
2.54 BSC
0.100 BSC
e1
7.62 BSC
0.300 BSC
L
3.81
5.08
0.150
0.200
L1
3.18
--
0.125
--
L2
0.38
1.78
0.015
0.070
S
--
2.49
--
0.098
Ø
0°
15°
0°
15°
C
e1
ALD1121E/ALD1123E
ø
Advanced Linear Devices
11 of 14
SOIC-16 PACKAGE DRAWING
16 Pin Plastic SOIC Package
E
Millimeters
S (45°)
D
Dim
Min
A
1.35
Max
1.75
0.053
Max
0.069
A1
0.10
0.25
0.004
0.010
b
0.35
0.45
0.014
0.018
C
0.18
0.25
0.007
0.010
D-16
9.80
10.00
0.385
0.394
E
3.50
4.05
0.140
0.160
A1
e
Min
1.27 BSC
e
A
Inches
0.050 BSC
H
5.70
6.30
0.224
0.248
L
0.60
0.937
0.024
0.037
ø
0°
8°
0°
8°
S
0.25
0.50
0.010
0.020
b
S (45°)
H
L
ALD1121E/ALD1123E
C
ø
Advanced Linear Devices
12 of 14
PDIP-16 PACKAGE DRAWING
16 Pin Plastic DIP Package
E
E1
Millimeters
Dim
D
S
A2
A1
e
b
A
L
Inches
A
Min
3.81
Max
5.08
Min
0.105
Max
0.200
A1
0.38
1.27
0.015
0.050
A2
1.27
2.03
0.050
0.080
b
0.89
1.65
0.035
0.065
b1
0.38
0.51
0.015
0.020
c
0.20
0.30
0.008
0.012
D-16
18.93
21.33
0.745
0.840
E
5.59
7.11
0.220
0.280
E1
7.62
8.26
0.300
0.325
e
2.29
2.79
0.090
0.110
e1
L
7.37
7.87
0.290
0.310
2.79
3.81
0.110
0.150
S-16
0.38
1.52
0.015
0.060
ø
0°
15°
0°
15°
b1
c
e1
ALD1121E/ALD1123E
ø
Advanced Linear Devices
13 of 14
CERDIP-16 PACKAGE DRAWING
16 Pin CERDIP Package
Millimeters
E E1
D
A1
s
A
L
L1
L2
b
b1
e
Inches
Dim
A
Min
3.55
Max
5.08
Min
0.140
Max
0.200
A1
1.27
2.16
0.050
0.085
b
0.97
1.65
0.038
0.065
b1
0.36
0.58
0.014
0.023
C
0.20
0.38
0.008
0.015
D-16
--
21.34
--
0.840
E
5.59
7.87
0.220
0.310
E1
7.73
8.26
0.290
0.325
e
2.54 BSC
0.100 BSC
e1
7.62 BSC
0.300 BSC
L
3.81
5.08
0.150
0.200
L1
3.18
--
0.125
--
L2
0.38
1.78
0.015
0.070
S
--
2.49
--
0.098
Ø
0°
15°
0°
15°
C
e1
ALD1121E/ALD1123E
ø
Advanced Linear Devices
14 of 14