RN4990AFS TOSHIBA Transistor Silicon NPN/PNP Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor) RN4990AFS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Q2 C B 2 5 3 4 0.15±0.05 6 0.48 Q1 1 +0.02 -0.04 Equivalent Circuit and Bias Resistor Values 0.1±0.05 0.1±0.05 Incorporating a bias resistor into the transistor reduces the number of parts, so enabling the manufacture of ever more compact equipment and lowering assembly cost. 0.35 0.35 • 0.8±0.05 0.1±0.05 1.0±0.05 Two devices are incorporated into a fine-pitch, small-mold (6-pin) package. 0.7±0.05 • C R1 1. EMIITTER1 2. BASE1 3. COLLECTOR2 4. EMITTER2 5. BASE2 6. COLLECTOR1 R1 B fS6 E E JEDEC ― JEITA ― TOSHIBA R1: 4.7 kΩ (E1) (B1) (C2) (E2) (B2) (C1) 2-1F1D Weight: 0.001 g (typ.) (Q1, Q2 common) Equivalent Circuit (top view) 6 5 4 Type name V9 Q2 Q1 1 Marking 2 3 1 2007-11-01 RN4990AFS Absolute Maximum Ratings (Ta = 25°C) (Q1) Characteristic Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V IC 80 mA Collector current Absolute Maximum Ratings (Ta = 25°C) (Q2) Characteristic Symbol Rating Unit Collector-base voltage VCBO −50 V Collector-emitter voltage VCEO −50 V Emitter-base voltage VEBO −5 V IC −80 mA Collector current Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 common) Characteristic Collector power dissipation Junction temperature Storage temperature range Note: Symbol PC (Note 1) Rating Unit 50 mW Tj 150 °C Tstg −55~150 °C Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating 2 2007-11-01 RN4990AFS Electrical Characteristics (Ta = 25°C) (Q1) Characteristic Symbol Test Condition Min Typ. Max Unit Collector cutoff current ICBO VCB = 50 V, IE = 0 ⎯ ⎯ 100 nA Emitter cutoff current IEBO VEB = 5 V, IC = 0 ⎯ ⎯ 100 nA DC current gain hFE VCE = 5 V, IC = 1 mA 120 ⎯ 700 Collector-emitter saturation voltage Collector output capacitance VCE (sat) Cob IC = 5 mA, IB = 0.25 mA ⎯ ⎯ 0.15 V VCB = 10 V, IE = 0, f = 1 MHz ⎯ 0.7 ⎯ pF Min Typ. Max Unit Electrical Characteristics (Ta = 25°C) (Q2) Characteristics Symbol Test Condition Collector cutoff current ICBO VCB = −50 V, IE = 0 ⎯ ⎯ −100 nA Emitter cutoff current IEBO VEB = −5 V, IC = 0 ⎯ ⎯ −100 nA DC current gain hFE VCE = −5 V, IC = −1 mA 120 ⎯ 400 IC = −5 mA, IB = −0.25 mA ⎯ ⎯ −0.15 V VCB = −10 V, IE = 0, f = 1 MHz ⎯ 0.9 ⎯ pF Collector-emitter saturation voltage Collector output capacitance VCE (sat) Cob Electrical Characteristics (Ta = 25°C) (Q1, Q2 common) Characteristic Input resistor Symbol Test Condition Min Typ. Max Unit R1 ⎯ 3.76 4.7 5.64 kΩ 3 2007-11-01 RN4990AFS Q1 IC - VI (ON) IC - VI (OFF) 100 10000 COLLECTOR CURRENT IC (uA) COLLECTOR CURRENT IC (mA) COMMON EMITTER VCE= 0.2V 10 Ta = 100°C 25 1 -25 COMMON EMITTER VCE = 5V 1000 -25 100 10 0.1 0.1 1 10 INPUT VOLTAGE VI (ON) (V) 0.2 100 hFE - IC 0.4 0.6 0.8 1 INPUT VOLTAGE VI (OFF) (V) 1.2 VCE (sat) - IC 1000 1 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) ( V) DC CURRENT GAIN hFE 25 Ta = 100°C Ta = 100°C 100 -25 25 COMMON EMITTER VCE = 5V 10 COMMON EMITTER IC / IB = 20 Ta = 100°C 0.1 -25 25 0.01 0.1 1 10 COLLECTOR CURRENT IC (mA) 100 0.1 4 1 10 COLLECTOR CURRENT IC (mA) 100 2007-11-01 RN4990AFS Q2 IC - VI (ON) IC - VI (OFF) -10000 COMMON EMITTER VCE = -0.2 V -10 COLLECTOR CURRENT IC (uA) COLLECTOR CURRENT IC (mA) -100 Ta = 100°C 25 -1 -25 -0.1 -0.1 -1 -10 COMMON EMITTER VCE = -5 V -1000 Ta = 100°C -10 -0.2 -100 -0.4 -0.6 -0.8 -1 -1.2 INPUT VOLTAGE VI (OFF) (V) hFE - IC VCE (sat) - IC -1 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) ( V) 1000 Ta = 100°C DC CURRENT GAIN hFE -25 -100 INPUT VOLTAGE VI (ON) (V) 25 100 -25 COMMON EMITTER VCE = -5 V 10 -0.1 25 -1 -10 COMMON EMITTER IC / IB = 20 -0.1 -25 -0.01 -0.1 -100 COLLECTOR CURRENT IC (mA) Ta = 100°C -1 25 -10 -100 COLLECTOR CURRENT IC (mA) 5 2007-11-01 RN4990AFS RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. 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