RN4985 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) RN4985 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm z Including two devices in US6 (ultra super mini type with 6 leads) z With built-in bias resistors z Simplify circuit design z Reduce a quantity of parts and manufacturing process Equivalent Circuit and Bias Resister Values R1: 2.2kΩ R2: 47kΩ (Q1, Q2 Common) Q1 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V IC 100 mA Collector current JEDEC ― JEITA ― TOSHIBA 2-2J1A Weight: 6.8 mg (typ.) Q2 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO −50 V Collector-emitter voltage VCEO −50 V Emitter-base voltage VEBO −5 V IC −100 mA Collector current 1 2007-11-01 RN4985 Q1, Q2 Common Absolute Maximum Ratings (Ta = 25°C) Characteristic Collector power dissipation Junction temperature Storage temperature range Symbol Rating Unit PC * 200 mW Tj 150 °C Tstg −55~150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). * Total rating Marking Equivalent Circuit (Top View) 2 2007-11-01 RN4985 Q1 Electrical Characteristics (Ta = 25°C) Characteristic Collector cut-off current Emitter cut-off current DC current gain Symbol Test Circuit ICBO ― ICEO Test Condition Min Typ. Max Unit VCB = 50V, IE = 0 ― ― 100 ― VCE = 50V, IB = 0 ― ― 500 IEBO ― VEB = 5V, IC = 0 0.078 ― 0.145 mA nA hFE ― VCE = 5V, IC = 10mA 80 ― ― ― VCE (sat) ― IC = 5mA, IB = 0.25mA ― 0.1 0.3 V Input voltage (ON) VI (ON) ― VCE = 0.2V, IC = 5mA 0.6 ― 1.1 V Input voltage (OFF) VI (OFF) ― VCE = 5V, IC = 0.1mA 0.5 ― 0.8 V Transition frequency fT ― VCE = 10V, IC = 5mA ― 250 ― MHz Cob ― VCB = 10V, IE = 0, f = 1 MHz ― 3 6 pF Min Typ. Max Unit Collector-emitter saturation voltage Collector output capacitance Q2 Electrical Characteristics (Ta = 25°C) Symbol Test Circuit ICBO ― VCB = −50V, IE = 0 ― ― −100 ICEO ― VCE = −50V, IB = 0 ― ― −500 Emitter cut-off current IEBO ― VEB = −5V, IC = 0 −0.078 ― −0.145 mA DC current gain hFE ― VCE = −5V, IC = −10mA 80 ― ― ― VCE (sat) ― IC = −5mA, IB = −0.25mA ― −0.1 −0.3 V Input voltage (ON) VI (ON) ― VCE = −0.2V, IC = −5mA −0.6 ― −1.1 V Input voltage (OFF) VI (OFF) ― VCE = −5V, IC = −0.1mA −0.5 ― −0.8 V Transition frequency fT ― VCE = −10V, IC = −5mA ― 200 ― MHz Cob ― VCB = −10V, IE = 0 ― 3 6 pF Characteristic Collector cut-off current Collector-emitter saturation voltage Collector output capacitance Test Condition nA Q1, Q2 Common Electrical Characteristics (Ta = 25°C) Symbol Test Circui t Test Condition Min Typ. Max Unit Input resistor R1 ― ― 1.54 2.2 2.86 kΩ Resistor ratio R1/R2 ― ― Characteristic 3 0.0421 0.0468 0.0515 ― 2007-11-01 RN4985 Q1 4 2007-11-01 RN4985 Q2 5 2007-11-01 RN4985 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. 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