GB01SLT12-220 Silicon Carbide Power Schottky Diode VRRM IF QC Features Package RoHS Compliant 1200 V Schottky rectifier 175 °C maximum operating temperature Temperature independent switching behavior Superior surge current capability Positive temperature coefficient of VF Extremely fast switching speeds Superior figure of merit QC/IF = = = 1200 V 1A 13 nC PIN 1 CASE PIN 2 1 2 TO – 220AC Advantages Applications Improved circuit efficiency (Lower overall cost) Low switching losses Ease of paralleling devices without thermal runaway Smaller heat sink requirements Low reverse recovery current Low device capacitance Low reverse leakage current at operating temperature Power Factor Correction (PFC) Switched-Mode Power Supply (SMPS) Solar Inverters Wind Turbine Inverters Motor Drives Induction Heating Uninterruptible Power Supply (UPS) High Voltage Multipliers Maximum Ratings at Tj = 175 °C, unless otherwise specified Parameter Repetitive peak reverse voltage Continuous forward current RMS forward current Surge non-repetitive forward current, Half Sine Wave Non-repetitive peak forward current 2 Symbol VRRM IF IF(RMS) IF,SM IF,max 2 I t value ∫i dt Power dissipation Operating and storage temperature Ptot Tj , Tstg Conditions Values 1200 1 2 10 8 65 0.5 0.3 42 -55 to 175 TC ≤ 160 °C TC ≤ 160 °C TC = 25 °C, tP = 10 ms TC = 160 °C, tP = 10 ms TC = 25 °C, tP = 10 µs TC = 25 °C, tP = 10 ms TC = 160 °C, tP = 10 ms TC = 25 °C Unit V A A A A 2 As W °C Electrical Characteristics at Tj = 175 °C, unless otherwise specified Parameter Symbol Diode forward voltage VF Reverse current IR Total capacitive charge QC Switching time ts Total capacitance C Conditions min. IF = 1 A, Tj = 25 °C IF = 1 A, Tj = 175 °C VR = 1200 V, Tj = 25 °C VR = 1200 V, Tj = 175 °C VR = 400 V IF ≤ IF,MAX VR = 960 V dIF/dt = 200 A/μs VR = 400 V Tj = 175 °C VR = 960 V VR = 1 V, f = 1 MHz, Tj = 25 °C VR = 400 V, f = 1 MHz, Tj = 25 °C VR = 1000 V, f = 1 MHz, Tj = 25 °C Values typ. 1.7 2.6 <1 2 7 13 max. 2.0 3.0 2 20 Unit V µA nC < 17 ns 69 10 8 pF 3.6 °C/W Thermal Characteristics Thermal resistance, junction - case RthJC Mechanical Properties Mounting torque Dec 2012 M http://www.genesicsemi.com/index.php/sic-products/schottky 0.6 Nm Pg1 of 4 GB01SLT12-220 Figure 1: Typical Forward Characteristics Figure 2: Typical Reverse Characteristics Figure 3: Power Derating Curve Figure 4: Current Derating Curves (D = tP/T, tP= 400 µs) (Considering worst case Zth conditions ) Figure 5: Typical Junction Capacitance vs Reverse Voltage Figure 6: Typical Switching Energy vs Reverse Voltage Dec 2012 http://www.genesicsemi.com/index.php/sic-products/schottky Pg2 of 4 GB01SLT12-220 Characteristics Characteristics Figure 7: Current vs Pulse Duration Curves at TC = 160 °C Figure 8: Transient Thermal Impedance Package Dimensions: TO-220AC PACKAGE OUTLINE NOTE 1. CONTROLLED DIMENSION IS INCH. DIMENSION IN BRACKET IS MILLIMETER. 2. DIMENSIONS DO NOT INCLUDE END FLASH, MOLD FLASH, MATERIAL PROTRUSIONS Dec 2012 http://www.genesicsemi.com/index.php/sic-products/schottky Pg3 of 4 GB01SLT12-220 Revision History Date Revision Comments 2012/12/19 2 Second generation update 2012/05/22 1 Second generation release 2010/12/13 0 Initial release Supersedes Published by GeneSiC Semiconductor, Inc. 43670 Trade Center Place Suite 155 Dulles, VA 20166 GeneSiC Semiconductor, Inc. reserves right to make changes to the product specifications and data in this document without notice. GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or implied to any intellectual property rights is granted by this document. Unless otherwise expressly indicated, GeneSiC products are not designed, tested or authorized for use in life-saving, medical, aircraft navigation, communication, air traffic control and weapons systems, nor in applications where their failure may result in death, personal injury and/or property damage. Dec 2012 http://www.genesicsemi.com/index.php/sic-products/schottky Pg4 of 4