GB01SLT12-220

GB01SLT12-220
Silicon Carbide Power
Schottky Diode
VRRM
IF
QC
Features
Package
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 RoHS Compliant
1200 V Schottky rectifier
175 °C maximum operating temperature
Temperature independent switching behavior
Superior surge current capability
Positive temperature coefficient of VF
Extremely fast switching speeds
Superior figure of merit QC/IF
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1200 V
1A
13 nC
Case
PIN 1
CASE
PIN 2
1
2
TO – 220AC
Advantages
Applications
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Improved circuit efficiency (Lower overall cost)
Low switching losses
Ease of paralleling devices without thermal runaway
Smaller heat sink requirements
Low reverse recovery current
Low device capacitance
Low reverse leakage current at operating temperature
Power Factor Correction (PFC)
Switched-Mode Power Supply (SMPS)
Solar Inverters
Wind Turbine Inverters
Motor Drives
Induction Heating
Uninterruptible Power Supply (UPS)
High Voltage Multipliers
Maximum Ratings at Tj = 175 °C, unless otherwise specified
Parameter
Repetitive peak reverse voltage
Continuous forward current
RMS forward current
Surge non-repetitive forward current, Half Sine
Wave
Non-repetitive peak forward current
2
Symbol
VRRM
IF
IF(RMS)
IF,SM
IF,max
2
I t value
∫i dt
Power dissipation
Operating and storage temperature
Ptot
Tj , Tstg
Conditions
Values
1200
1
2
10
8
65
0.5
0.3
42
-55 to 175
TC ≤ 160 °C
TC ≤ 160 °C
TC = 25 °C, tP = 10 ms
TC = 160 °C, tP = 10 ms
TC = 25 °C, tP = 10 µs
TC = 25 °C, tP = 10 ms
TC = 160 °C, tP = 10 ms
TC = 25 °C
Unit
V
A
A
A
A
2
AS
W
°C
Electrical Characteristics at Tj = 175 °C, unless otherwise specified
Parameter
Symbol
Diode forward voltage
VF
Reverse current
IR
Total capacitive charge
QC
Switching time
ts
Total capacitance
C
Conditions
min.
IF = 1 A, Tj = 25 °C
IF = 1 A, Tj = 175 °C
VR = 1200 V, Tj = 25 °C
VR = 1200 V, Tj = 175 °C
VR = 400 V
IF ≤ IF,MAX
VR = 960 V
dIF/dt = 200 A/μs
VR = 400 V
Tj = 175 °C
VR = 960 V
VR = 1 V, f = 1 MHz, Tj = 25 °C
VR = 400 V, f = 1 MHz, Tj = 25 °C
VR = 1000 V, f = 1 MHz, Tj = 25 °C
Values
typ.
1.67
2.6
0.29
2.43
7
13
max.
2
3
2
20
Unit
V
µA
nC
< 17
ns
69
10
8
pF
3.55
°C/W
0.6
Nm
Thermal Characteristics
Thermal resistance, junction - case
RthJC
Mechanical Properties
Mounting torque
May 2012
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GB01SLT12-220
Figure 1: Typical Forward Characteristics
Figure 2: Typical Reverse Characteristics
Figure 3: Power Derating Curve
Figure 4: Current Derating Curves (D = tP/T, tP= 400 µs)
(Considering worst case Zth conditions )
Figure 5: Typical Junction Capacitance vs Reverse Voltage
Characteristics
Figure 6: Typical Switching Energy vs Reverse Voltage
Characteristics
May 2012
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Figure 7: Current vs Pulse Duration Curves at TC = 160 °C
Figure 8: Transient Thermal Impedance
Package Dimensions:
TO-220AC
PACKAGE OUTLINE
NOTE
1. CONTROLLED DIMENSION IS INCH. DIMENSION IN BRACKET IS MILLIMETER.
2. DIMENSIONS DO NOT INCLUDE END FLASH, MOLD FLASH, MATERIAL PROTRUSIONS
May 2012
http://www.genesicsemi.com/index.php/sic-products/schottky
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GB01SLT12-220
Revision History
Date
Revision
Comments
2012/05/22
1
Second generation release
2010/12/13
0
Initial release
Supersedes
Published by
GeneSiC Semiconductor, Inc.
43670 Trade Center Place Suite 155
Dulles, VA 20166
GeneSiC Semiconductor, Inc. reserves right to make changes to the product specifications and data in this document without notice.
GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or implied to any
intellectual property rights is granted by this document.
Unless otherwise expressly indicated, GeneSiC products are not designed, tested or authorized for use in life-saving, medical, aircraft
navigation, communication, air traffic control and weapons systems, nor in applications where their failure may result in death, personal
injury and/or property damage.
May 2012
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