MASW-007075-000100 GaAs SPDT Absorptive Switch with ASIC Driver, DC-3.0 GHz Rev. V4 Features • • • • • • • • • • • • Typical Isolation: 36 dB (2,000 MHz) Typical Insertion Loss: 1.8 dB (2,000 MHz) Integral ASIC TTL/CMOS Driver Low DC Power Consumption 50 Ohm Nominal Impedance Tape and Reel Packaging Available Test Boards Available Lead-Free SOW-24 Package 100% Matte Tin Plating over Copper Halogen-Free “Green” Mold Compound 260°C Reflow Compatible RoHS* Compliant Version of SW65-0114 Description M/A-COM's MASW-007075-000100 is a GaAs MMIC absorptive SPDT switch with an integral silicon ASIC driver. This device is in a 24-lead plastic package. This switch offers excellent broadband performance and repeatability from DC to 3 GHz, while maintaining low DC power dissipation. The MASW007075-000100 is ideally suited for wireless infrastructure applications. Also available in ceramic package with improved performance. Functional Block Diagram PIN 1 RFC GND PIN 24 GND GND GND GND GND GND GND GND RF1 RF2 GND GND VEE GND GND GND VCC GND GND GND C1 PIN 13 PIN 12 C2 Pin Configuration Pin No. Function Pin No. Function 1 RFC 13 C1 2 GND 14 GND 3 GND 15 GND 4 GND 16 GND Ordering Information Part Number Package MASW-007075-000100 Bulk Packaging 5 GND 17 GND MASW-007075-0001TR 1000 piece reel 6 RF2 18 GND MASW-007075-0001TB Sample Test Board 7 GND 19 RF1 8 VEE 20 GND 9 GND 21 GND 10 VCC 22 GND 11 GND 23 GND 12 C2 24 GND Note: Reference Application Note M513 for reel size information. * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. 1 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 is considering for development. Performance is based on target specifications, simulated results, • India Tel: +91.80.4155721 • China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment to develop is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MASW-007075-000100 GaAs SPDT Absorptive Switch with ASIC Driver, DC-3.0 GHz Rev. V4 Electrical Specifications: TA = 25°C, Z0 = 50Ω Parameter Test Conditions Units Min Typ Max Insertion Loss DC - 3.0 GHz dB — 1.8 2.2 Isolation (All arms off) DC - 3.0 GHz dB 33 36 — VSWR DC - 3.0 GHz On Off — — — — 1.7:1 2.1:1 2.2:1 2.2:1 Trise Tfall Toff Ton Transients 10%/90%, 90%/10% 1 50% TTL to 90%/10% RF In-band (peak to peak) ns ns mV —— — 15 50 50 50 150 150 1 dB Compression .05 GHz .5 - 3.0 GHz dBm dBm — — +20 +27 — — Input IP3 Two tone inputs 0.05 GHz up to +5 dBm 0.5 - 3.0 GHz dBm dBm — — +35 +46 — — VCC — V +4.5 +5.0 +5.5 VEE — V -8.0 -5.0 -4.75 VIL VIH LOW-level input voltage HIGH-level input voltage V V 0.0 2.0 — — 0.8 5.0 lin (Input Leakage Current) Vin = VCC or GND uA -1.0 — 1.0 Icc (Quiescent Supply Current) Vcntrl = VCC or GND uA — 250 400 ΔIcc (Additional Supply Current Per TTL Input Pin) VCC = Max, Vcntrl = VCC - 2.1 V mA — — 1.0 IEE VEE min to max, Vin = VIL or VIH mA -1.0 -0.2 — 1. Decoupling capacitors (.01 µF) are required on the power supply lines. Absolute Maximum Ratings 2,3 Parameter Max. Input Power 0.05 GHz 0.5 - 3.0 GHz4 +27 dBm +34 dBm VCC -0.5V ≤ VCC ≤ +7.0V VEE -8.5V ≤ VEE ≤ +0.5V VCC - VEE -0.5V ≤ VCC - VEE ≤ 14.5V Vin 2 Absolute Maximum 5 -0.5V ≤ Vin ≤ VCC + 0.5V Operating Temperature -40ºC to +85ºC Storage Temperature -65ºC to +125ºC 2. Exceeding any one or combination of these limits may cause permanent damage to this device. 3. M/A-COM does not recommend sustained operation near these survivability limits. 4. When the RF input is applied to the terminated port, the absolute maximum power is +30 dBm. 5. Standard CMOS TTL interface, latch-up will occur if logic signal is applied prior to power supply. Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these devices. Truth Table TTL Control Input RF Common To: C1 C2 RF1 RF2 1 0 On Off 0 1 Off On ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 is considering for development. Performance is based on target specifications, simulated results, • India Tel: +91.80.4155721 • China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment to develop is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MASW-007075-000100 GaAs SPDT Absorptive Switch with ASIC Driver, DC-3.0 GHz Rev. V4 Typical Performance Curves Insertion Loss vs. Frequency Isolation Loss vs. Frequency 2.0 90 70 Isolation (dB) Insertion Loss (dB) 80 1.5 1.0 0.5 60 50 40 30 20 10 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.0 Frequency (GHz) -55C 25C 1.0 1.5 2.0 2.5 3.0 2.0 2.5 3.0 Frequency (GHz) RFC VSWR vs. Frequency RF1-RF2 VSWR vs. Frequency 2.2 2.2 2.0 RF1 - RF2 VSWR 2.0 1.8 RFC VSWR 0.5 85C 1.6 1.4 1.8 1.6 1.4 1.2 1.2 1.0 1.0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.5 1.0 1.5 Frequency (GHz) Frequency (GHz) ON OFF 3 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 is considering for development. Performance is based on target specifications, simulated results, • India Tel: +91.80.4155721 • China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment to develop is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MASW-007075-000100 GaAs SPDT Absorptive Switch with ASIC Driver, DC-3.0 GHz Rev. V4 Lead-Free, SOW-24† † Reference Application Note M538 for lead-free solder reflow recommendations. 4 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 is considering for development. Performance is based on target specifications, simulated results, • India Tel: +91.80.4155721 • China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment to develop is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice.