TO -22 0 AC BYC8-600 Hyperfast power diode 23 May 2013 Product data sheet 1. General description Hyperfast power diode in a SOD59 (2-lead TO-220AC) plastic package. 2. Features and benefits • • Low reverse recovery current and low thermal resistance Reduces switching losses in associated MOSFET 3. Applications • • • Continuous Current Mode (CCM) Power Factor Correction (PFC) Half-bridge/full-bridge switched-mode power supplies Half-bridge lighting ballasts 4. Quick reference data Table 1. Quick reference data Symbol Parameter VRRM repetitive peak reverse voltage IF(AV) average forward current Conditions Min Typ Max Unit - - 600 V - - 8 A IF = 8 A; Tj = 150 °C; Fig. 4 - 1.4 1.85 V IF = 8 A; VR = 400 V; dIF/dt = 500 A/µs; - 19 - ns δ = 0.5 ; Tmb ≤ 109 °C; square-wave pulse; Fig. 1; Fig. 2 Static characteristics VF forward voltage Dynamic characteristics trr reverse recovery time Tj = 25 °C; Fig. 5 Scan or click this QR code to view the latest information for this product BYC8-600 NXP Semiconductors Hyperfast power diode 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 K Simplified outline cathode Graphic symbol mb K A 001aaa020 2 A anode mb mb mounting base; cathode 1 2 TO-220AC (SOD59) 6. Ordering information Table 3. Ordering information Type number Package BYC8-600 Name Description Version TO-220AC plastic single-ended package; heatsink mounted; 1 mounting hole; 2-lead TO-220AC SOD59 7. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VRRM Conditions Min Max Unit repetitive peak reverse voltage - 600 V VRWM crest working reverse voltage - 600 V IF(AV) average forward current - 8 A - 16 A - 60 A - 55 A δ = 0.5 ; Tmb ≤ 109 °C; square-wave pulse; Fig. 1; Fig. 2 IFRM repetitive peak forward current δ = 0.5 ; tp = 25 µs; Tmb ≤ 109 °C; square-wave pulse IFSM non-repetitive peak forward current tp = 8.3 ms; Tj(init) = 150 °C; sine-wave pulse tp = 10 ms; Tj(init) = 150 °C; sine-wave pulse Tstg storage temperature -40 150 °C Tj junction temperature - 150 °C BYC8-600 Product data sheet All information provided in this document is subject to legal disclaimers. 23 May 2013 © NXP B.V. 2013. All rights reserved 2/9 BYC8-600 NXP Semiconductors Hyperfast power diode 003aab472 30 Ptot (W) 25 003aab471 20 Ptot (W) δ =1 a = 1.57 1.9 16 2.2 0.5 20 2.8 12 4.0 0.2 15 0.1 8 10 4 5 0 Fig. 1. 0 4 8 IF(AV) (A) 0 12 Fig. 2. Forward power dissipation as a function of average forward current; square waveform; maximum values 0 2 4 6 IF(AV) (A) 8 Forward power dissipation as a function of average forward current; sinusoidal waveform; maximum values 8. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base Fig. 3 - - 2.2 K/W Rth(j-a) thermal resistance from junction to ambient free air - 60 - K/W 003aac977 10 Zth(j-mb) (K/W) 1 10- 1 P δ= tp T 10- 2 tp 10- 3 10- 6 Fig. 3. 10- 5 10- 4 10- 3 10- 2 t T 10- 1 1 10 tp (s) Transient thermal impedance from junction to mounting base as a function of pulse width BYC8-600 Product data sheet All information provided in this document is subject to legal disclaimers. 23 May 2013 © NXP B.V. 2013. All rights reserved 3/9 BYC8-600 NXP Semiconductors Hyperfast power diode 9. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit IF = 8 A; Tj = 25 °C - 2 2.9 V IF = 8 A; Tj = 150 °C; Fig. 4 - 1.4 1.85 V IF = 16 A; Tj = 150 °C - 1.7 2.3 V VR = 600 V; Tj = 25 °C - 9 150 µA VR = 500 V; Tj = 100 °C - 1.1 3 mA IF = 1 A; VR = 100 V; dIF/dt = 100 A/µs; - 12 - nC - 30 52 ns - 19 - ns - 32 40 ns - 1.5 5.5 A - 9.5 12 A - 8 10 V Static characteristics VF IR forward voltage reverse current Dynamic characteristics Qr recovered charge Tj = 25 °C trr reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 50 A/µs; Tj = 25 °C IF = 8 A; VR = 400 V; dIF/dt = 500 A/µs; Tj = 25 °C; Fig. 5 IF = 8 A; VR = 400 V; dIF/dt = 500 A/µs; Tj = 100 °C IRM peak reverse recovery current IF = 8 A; VR = 400 V; dIF/dt = 50 A/µs; Tj = 125 °C IF = 8 A; VR = 400 V; dIF/dt = 500 A/µs; Tj = 100 °C VFR forward recovery voltage BYC8-600 Product data sheet IF = 10 A; dIF/dt = 100 A/µs; Tj = 25 °C; Fig. 6 All information provided in this document is subject to legal disclaimers. 23 May 2013 © NXP B.V. 2013. All rights reserved 4/9 BYC8-600 NXP Semiconductors Hyperfast power diode 003aac976 20 IF IF (A) dlF dt 16 trr 12 time 25 % 8 (1) (2) (3) 100 % Qr 4 IR 0 Fig. 4. IRM 003aac562 0 1 2 3 VF (V) 4 Fig. 5. Reverse recovery definitions; ramp recovery Forward current as a function of forward voltage IF time VF VFRM VF time 001aab912 Fig. 6. Forward recovery definitions BYC8-600 Product data sheet All information provided in this document is subject to legal disclaimers. 23 May 2013 © NXP B.V. 2013. All rights reserved 5/9 BYC8-600 NXP Semiconductors Hyperfast power diode 10. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 2-lead TO-220AC SOD59 E A A1 P q D1 D H Q b1 L 1 2 c b e 0 5 Dimensions Unit mm max nom min 10 mm scale A A1 b b1(1) c D D1 E 4.7 1.40 0.95 1.7 0.65 15.8 6.8 10.30 4.3 1.15 0.70 1.3 0.45 15.6 6.4 9.65 e H 5.08 (REF) L P Q q 16.25 15.0 3.80 2.6 2.9 15.70 12.5 3.65 2.2 2.7 Note 1. Protruded dambar are included in the dimension. Outline version SOD59 Fig. 7. sod059_po References IEC JEDEC JEITA European projection Issue date 09-08-25 12-11-27 2-lead TO-220AC Package outline TO-220AC (SOD59) BYC8-600 Product data sheet All information provided in this document is subject to legal disclaimers. 23 May 2013 © NXP B.V. 2013. All rights reserved 6/9 BYC8-600 NXP Semiconductors Hyperfast power diode In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 11. 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Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the All information provided in this document is subject to legal disclaimers. 23 May 2013 © NXP B.V. 2013. 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Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Limiting values .......................................................2 8 Thermal characteristics .........................................3 9 Characteristics ....................................................... 4 10 Package outline ..................................................... 6 11 11.1 11.2 11.3 11.4 Legal information ...................................................7 Data sheet status ................................................. 7 Definitions .............................................................7 Disclaimers ...........................................................7 Trademarks .......................................................... 8 © NXP B.V. 2013. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 23 May 2013 BYC8-600 Product data sheet All information provided in this document is subject to legal disclaimers. 23 May 2013 © NXP B.V. 2013. All rights reserved 9/9