AME AME8855AAGA110

AME
High PSRR, Low Noise, 600mA
CMOS Regulator
AME8855A
n General Description
The AME8855A family of positive, CMOS linear regulators provide low dropout voltage(420mV@600mA), low
quiescent current, and low noise CMOS LDO. These
rugged devices have both Thermal Shutdown, and Current limit to prevent device failure under the "Worst" of
operating conditions.
n Typical Application
IN
OUT
IN
OUT
AME8855 A
EN
GND
CIN
1µF
COUT
1µF
n Features
l Low Dropout Voltage: 420mV@600mA
l Guaranteed Current: 600mA
l Quiescent Current: 60µA (typ.)
l Over-Temperature Shutdown
n Functional Block Diagram
l Current Limiting protection
l PSRR:60dB@10KHz
l Ultra-Low-Noise: 100µVRMS at 1Hz to 100KHz
IN
OUT
l Low Temperature Coefficient
l Input Voltage Range 2.8V~5.5V
Overcurrent
Shutdown
l Output Voltage Range: 0.8V ~ 4.3V
l Green Products Meet RoHS Standards
Thermal
Shutdown
EN
n Applications
l Instrumentation
R1
AMP
+
l Portable Electronics
l Wireless Devices
l Cordless Phones
l PC Peripherals
l Battery Powered Widgets
Rev. B.02
R2
Vref
GND
1
AME
High PSRR, Low Noise, 600mA
CMOS Regulator
AME8855A
n Pin Configuration
3 Pin
SOT-223
Top View
SOT-223
Top View
AME8855 A
AME8855A-AGTxxx
AME8855A-BGTxxx
1. IN
1. GND
2. GND (TAB)
AME8855 A
3. OUT
1
2
3
* Die Attach:
Conductive Epoxy
SOT-89
Top View
3. IN
1
2
3
AME8855A-BFTxxx
1. IN
AME8855A
2. GND (TAB)
1. GND
AME8855A
2. OUT (TAB)
3. OUT
2
* Die Attach:
Non-Conductive Epoxy
SOT-89
Top View
AME8855A-AFTxxx
1
2. OUT (TAB)
3
* Die Attach:
Conductive Epoxy
3. IN
1
2
3
* Die Attach:
Non-Conductive Epoxy
SOT-89
Top View
AME8855A-CFTxxx
1. GND
AME8855A
2. IN (TAB)
3. OUT
1
2
2
3
* Die Attach:
Non-Conductive Epoxy
Rev. B.02
AME
High PSRR, Low Noise, 600mA
CMOS Regulator
AME8855A
„ Pin Configuration (Contd.)
3 Pin
SOT-23
Top View
SOT-23
Top View
AME8855 A
AME8855A-AETxxx
1. IN
2. GND
3. OUT
AME8855 A
AME8855A-BETxxx
1. GND
2. OUT
3. IN
1
* Die Attach:
Non-Conductive Epoxy
1
* Die Attach:
Non-Conductive Epoxy
3
2
3
2
8 Pin
5 Pin
SOT-25
Top View
5
SOP-8
Top View
4
AME8855A
1
2
AME8855A-AEVxxx
1. IN
2. GND
3. EN
4. NC
5. OUT
8
7
6
5
AME8855A
3
1
* Die Attach:
Conductive Epoxy
2
3
4
AME8855A-AHAxxx
1. IN
2. GND
3.
4.
5.
6.
7.
8.
GND
OUT
NC
GND
GND
EN
* Die Attach:
Conductive Epoxy
Rev. B.02
3
AME
High PSRR, Low Noise, 600mA
CMOS Regulator
AME8855A
n Pin Description
SOT-223
Pin Number
Pin Name
Pin Description
A
B
1
3
IN
2
1
GND
Ground connection pin.
3
2
OUT
LDO voltage regulator output pin; should be decoupled with a 1.0µF
or greater value low ESR ceramic capacitor.
Input voltage pin; should be decoupled with 1µF or greater
capacitor.
SOT-89
Pin Number
4
Pin Name
Pin Description
A
B
C
1
3
2
IN
2
1
1
GND
Ground connection pin.
3
2
3
OUT
LDO voltage regulator output pin; should be decoupled with a 1.0µF
or greater value low ESR ceramic capacitor.
Input voltage pin; should be decoupled with 1µF or greater
capacitor.
Rev. B.02
AME
AME8855A
High PSRR, Low Noise, 600mA
CMOS Regulator
n Pin Description
SOP-8
Pin Name
IN
Pin Description
Input voltage pin; should be decoupled with 1µF or greater capacitor.
GND
Ground connection pin.
GND
Ground connection pin.
OUT
LDO voltage regulator output pin; should be decoupled with a 1.0µF or greater value low ESR
ceramic capacitor.
NC
No connection.
GND
Ground connection pin.
GND
Ground connection pin.
EN
Rev. B.02
Enable pin, Active “high". When pulled “low”, the PMOS pass transistor turns off, current
consuming less than 1µA. When EN pin floating outside, it’s weakly pulled low by internal small
current source .
5
AME
High PSRR, Low Noise, 600mA
CMOS Regulator
AME8855A
n Pin Configuration
SOT-23
Pin Number
Pin Name
Pin Description
A
B
1
3
IN
2
1
GND
Ground connection pin.
3
2
OUT
LDO voltage regulator output pin; should be decoupled with a 1.0µF
or greater value low ESR ceramic capacitor.
Pin Number
Pin Name
Pin Description
1
IN
2
GND
Input voltage pin; should be decoupled with 1µF or greater
capacitor.
SOT-25
6
Input voltage pin; should be decoupled with 1µF or greater
capacitor.
Ground connection pin.
3
EN
Enable pin, Active “high". When pulled “low”, the PMOS pass
transistor turns off, current consuming less than 1µA. When EN
pin floating outside, it’s weakly pulled low by internal small current
source .
4
NC
No connection.
5
OUT
LDO voltage regulator output pin; should be decoupled with a 1.0µF
or greater value low ESR ceramic capacitor.
Rev. B.02
AME
High PSRR, Low Noise, 600mA
CMOS Regulator
AME8855A
n Ordering Information
AME8855A - x x x xxx
Output Voltage
Number of Pins
Package Type
Pin Configuration
Pin Configuration
A
(SOT-223)
(SOT-23)
1. IN
2. GND
3. OUT
(SOT-89)
B
(SOT-223)
(SOT-23)
1. GND
2. OUT
3. IN
(SOT-89)
C
(SOT-89)
A
(SOT-25)
A
(SOP-8)
Rev. B.02
1. GND
2. IN
3. OUT
Package
Type
E:
F:
G:
H:
SOT-2X
SOT-89
SOT-223
SOP
Number of
Pins
A: 8
T: 3
V: 5
Output Voltage
080:
090:
100:
110:
120:
130:
140:
150:
:
:
420:
430:
0.8V
0.9V
1.0V
1.1V
1.2V
1.3V
1.4V
1.5V
:
:
4.2V
4.3V
1. IN
2. GND
3. EN
4. BYP
5. OUT
1. IN
2. GND
3. GND
4. OUT
5. NC
6. GND
7. GND
8. EN
7
AME
High PSRR, Low Noise, 600mA
CMOS Regulator
AME8855A
n Absolute Maximum Ratings
Parameter
Maximum
Unit
Input Voltage
-0.3 to 6
V
EN Voltage
-0.3 to 6
V
Output Current
PD/(V IN -V OUT)
mA
Output Voltage
GND-0.3 to VIN +0.3
V
HBM
2
kV
MM
200
V
ESD Classification
Caution: Stress above the listed in absolute maximum ratings may cause permanent damage to the device.
n Recommended Operating Conditions
Parameter
8
Symbol
Rating
Unit
Ambient Temperature Range
TA
- 40 to +85
o
Junction Temperaturen Range
TJ
- 40 to +125
o
Storage Temperaturen Range
TSTG
- 65 to +150
o
C
C
C
Rev. B.02
AME
High PSRR, Low Noise, 600mA
CMOS Regulator
AME8855A
n Thermal Information
Parameter
Package
Die Attach
Symbol
Maximum
Conductive Epoxy
40
Non-Conductive Epoxy
46
Conductive Epoxy
25
Unit
SOT-89
Thermal Resistance*
(Junction to Case)
SOT-223
Non-Conductive Epoxy
θ JC
31
SOT-23
Non-Conductive Epoxy
140
SOT-25
Conductive Epoxy
81
SOP-8
Conductive Epoxy
60
Conductive Epoxy
180
Non-Conductive Epoxy
180
Conductive Epoxy
120
o
C/W
o
C/W
SOT-89
Thermal Resistance
(Junction to Ambient)
SOT-223
Non-Conductive Epoxy
θJA
135
SOT-23
Non-Conductive Epoxy
280
SOT-25
Conductive Epoxy
260
SOP-8
Conductive Epoxy
150
Conductive Epoxy
550
Non-Conductive Epoxy
550
Conductive Epoxy
900
SOT-89
SOT-223
Internal Power Dissipation
Non-Conductive Epoxy
PD
800
SOT-23
Non-Conductive Epoxy
400
SOT-25
Conductive Epoxy
400
SOP-8
Conductive Epoxy
810
mW
Maximum Juction Temperature
150
o
C
Lead Temperature (Soldering, 10Sec. )**
260
o
C
* Measure θJC on backside center of molding compound if IC has no tab.
** MIL-STD-202G 210F
Rev. B.02
9
AME
High PSRR, Low Noise, 600mA
CMOS Regulator
AME8855A
n Electrical Specifications
VIN=VOUT(NOM) +1V, (for VOUT<2V, VIN=2.8V), IOUT=1mA, and COUT=1µF, CIN=1µF unless otherwise noted.
Typical values are at TA=25oC.
Parameter
Input Voltage
Output Accuracy
Output Voltage Range
Dropout Voltage
(Note 1)
Symbol
Test Condition
VIN
VOUT,ACC
IOUT=1mA
VOUT
VDROP
Min
Max
Units
2.8
5.5
V
-2.0
2.0
%
0.8
4.3
V
IOUT =600mA, 0.8V≦VOUT(NOM)≦2.0V
Note2
IOUT =600mA, 2.0V<VOUT(NOM)≦2.8V
850
IOUT=600mA, 2.8V<V OUT(NOM)
Output Current
Quiescent Current
IOUT
IQ
Line Regulation
∆VOUT
×100%
∆VIN
VOUT
REGLINE
Load Regulation
∆VOUT
× 100%
VOUT
∆I OUT
10
REGLOAD
Typ
420
mV
650
600
mA
IOUT=0mA
60
90
IOUT =1mA, 0.8V≦VOUT≦1.2V,
2.8V≦VIN ≦3.5V
0.125
0.25
IOUT=1mA, 1.2V<VOUT≦2.0V,
2.8V≦VIN ≦3.5V
0.1
0.2
IOUT=1mA, 2.0V<VOUT≦ 4.2V,
VIN(MIN)≦VIN ≦VIN(MIN)+1V
0.05
0.1
IOUT=1mA, 4.2V<VOUT≦ 4.5V,
VIN(MIN)≦VIN ≦5.5V
0.05
0.25
1mA≦IOUT ≦600mA
0.8V≦VOUT(NOM)≦1.2V
1.5
3
1mA≦IOUT ≦600mA
1.2V≦VOUT(NOM)≦2.0V
1.25
2.5
1mA≦IOUT ≦600mA
2.0V<VOUT(NOM)
1.0
2.0
µA
%/V
%/A
Rev. B.02
AME
High PSRR, Low Noise, 600mA
CMOS Regulator
AME8855A
n Electrical Specifications (Contd.)
Parameter
Power Supply
Rejection Ration
Symbol
PSRR
Test Condition
COUT =1uF, VOUT=0.8V
IOUT =10mA
VIN=2.8V
Min
Typ
F=100Hz
60
F=1KHz
60
F=10KHz
60
Max
dB
Output Voltage Noise
eN
IOUT=10mA, VOUT=0.8V,
f=1Hz to 100KHz
Enable High (Enabled)
VEN,HI
VIN(MIN)≦VIN ≦5.5V
1.4
VIN
Enable Low (Shutdown)
VEN,LO
VIN(MIN)≦VIN ≦5.5V
0
0.4
IEN,HI
VEN=VIN
8
IEN,LO
VEN=0V
1
ISHDN
VIN=5.0V, V EN=0V
VOUT,SD
IOUT=0.4mA, VEN =0
Output Current Limit
ILIM
VOUT =0.9 x VOUT(NOM)
Short-Circuit Current
ISC
VOUT≦0.6V
300
Thermal Shutdown
Temperature
TSHDN
Shutdown, temperature increasing
150
Thermal Shutdown
Hysteresis
TSHDN(HYS)
Enable Input Bias Current
Shutdown Current
Shutdown Output Voltage
µVRMS
100
0.1
Units
V
µA
1
µA
0.4
V
Protection
750
mA
o
C
20
Note1: Dropout Voltage is measured at VOUT=VOUT(NOM)x98%
Note2:For VOUT below 2.0V, Dropout Voltage is the Input(MIN) Voltage to Output Voltage differential.
Rev. B.02
11
AME
AME8855A
n Detailed Description
The AME8855 family of CMOS regulators contain a
PMOS pass transistor, voltage reference, error amplifier,
over-current protection thermal shutdown, and Power Good
detection circuitry.
The P-channel pass transistor receives data from the
error amplifier, over-current shutdown, and thermal protection circuits. During normal operation, the error amplifier compares the output voltage to a precision reference.
Over-current and Thermal shutdown circuits become active when the junction temperature exceeds 150oC, or
the current exceeds 600mA. During thermal shutdown,
the output voltage remains low. Normal operation is restored when the junction temperature drops more 20oC.
High PSRR, Low Noise, 600mA
CMOS Regulator
Capacitor Selection and Regulator Stability
The maximum output power of the AME8855 is limited
by the maximum power dissipation of the package. By
calculation the power dissipation of the package as a
function of the input voltage, output voltage and output
current, the maximum input voltage can be obtained. The
maximum power dissipation should not exceed the
package’ s maximum power rating.
PMAX = (V IN(MAX) -V OUT) x IOUT
Where:
VIN(MAX) = maximum input voltage
PMAX = maximum power dissipation of the package
Capacitor Selection and Regulator Stability
The AME8855 is stable with an output capacitor to
ground of 1µF or greater. Ceramic capacitors have the
lowest ESR, and will offer the best AC performance. Conversely, Aluminum Electrolytic capacitors exhibit the highest ESR, resulting in the poorest AC response. Unfortunately, large value ceramic capacitors are comparatively
expensive. One option is to parallel a 0.1µF ceramic
capacitor with a 10µF Aluminum Electrolytic. The benefit
is low ESR, high capacitance, and low overall cost.
A second capacitor is recommended between the input and ground to stabilize V IN. The input capacitor should
be at least 0.1µF to have a beneficial effect.
Enable Pin
The Enable Pin is pull-low. When activated pulled low,
the MOS pass transistor shuts off, and all internal circuits are powered down. In this state, the stand by current is less than 1µA.
12
Rev. B.02
AME
High PSRR, Low Noise, 600mA
CMOS Regulator
AME8855A
n Characterization Curve
Output Voltage
1.05
1.04
1.04
1.03
1.03
Output Voltage (V)
Output Voltage (V)
Output Voltage
1.05
1.02
1.01
1.00
0.99
0.98
V IN = 2.8V
VOUT = 1V
IOUT = 1mA
0.97
0.96
0.95
-40
-25
-10
+5
+20 +35
1.02
1.01
1.00
0.99
0.98
VIN = 2.8V
VOUT = 1V
IOUT = 600mA
0.97
0.96
0.95
-40
+50 +65 +80 +95 +110 +125
-25
-10
+50 +20
Temperature ( OC)
4.40
4.40
4.35
4.30
4.25
4.15
-40
VIN = 5.5V
VOUT = 4.3V
IOUT = 1mA
-25
-10
+5
+20 +35 +50 +65 +80
+95 +110 +125
4.35
4.30
4.25
VIN = 5.5V
VOUT = 4.3V
IOUT = 600mA
4.20
4.15
-40
-25
-10
+5
Quiescent Current
90
70
60
50
40
30
VOUT = 1V
10
Quiescent Current (µA)
90
Quiescent Cu rren t (µA)
100
80
80
70
60
50
40
30
20
VOUT = 4.3V
10
-20
-10
+5
+20 +35
+50 +65
Temperature (OC)
Rev. B.02
+65 +80 +95 +110 +125
Quiescent Current
100
0
-40
+20 +35 +50
Temperature ( OC)
O
Temperature ( C)
20
+65 +80 +95 +110 +125
Output Voltage
4.45
Outpu t Voltage (V)
Output Voltage (V)
Output Voltage
4.45
4.20
+35 +50
Temperature (O C)
+80
95
+110 +125
0
-40
-25
-10
+5
+20
+35
+50
+65
+80 +95 +110 +125
Temperature ( OC)
13
AME
High PSRR, Low Noise, 600mA
CMOS Regulator
AME8855A
n Characterization Curve (Contd.)
Current Limit vs Input Voltage
1600
1400
1400
Current Limit (mA)
Current Limit (mA)
Current Limit vs Input Voltage
1600
1200
1200
1000
1000
800
800
VOUT = 1V
600
2.8
3.8
4.8
V OUT = 4.3V
600
5.5
5.3
5.4
Input Voltage (V)
Dropout Voltage
Stability vs. ESR vs. Load Current
700
Region of Stab le COUT ESR(Ω)
10.00
Dropout Voltage(mV)
600
500
400
300
200
VOUT = 4.3V
100
-40
-25
-10
+5
+20 +35
+50
+65
+80
+95
Unstable Range
1.00
0.10
Stable Range
0.01
0.005
+ 110
VIN = 5V
C IN = C OUT = 1µF / X7R
0.00
Temperature ( OC)
0
50
100
Unstable Range
150
200
800
Short Circuit Current (mA)
700
600
500
400
300
700
600
500
400
300
VOUT = 1V
VOUT = 1V
2.8
3.8
Input Voltage (V)
14
300
Short Circuit Current Protection
800
200
250
Load Current(mA)
Short Circuit Current Protection
Short Circuit Current (mA)
5.5
Input Voltage (V)
4.8
5.5
200
5.5
5.3
Input Voltage (V)
Rev. B.02
AME
High PSRR, Low Noise, 600mA
CMOS Regulator
AME8855A
n Characterization Curve (Contd.)
Line Transient Response
Line Transient Response
O
TA = -40 OC, VOUT = 4.3V, I OUT = 10mA
TA = -40 C,VOUT = 1V, IOUT = 10mA
5.5V
V IN
(1V/DIV)
5.5V
VIN
(1V/DIV)
4.8V
2.5V
20mV
20mV
VOUT
(20mV /DIV)
VOUT
(20mV/DIV)
0
0
-20mV
-20mV
20µS / div
20µS / div
Line Transient Response
Line Transient Response
TA = 25 OC,VOUT = 1V, I OUT = 10mA
TA = 25 OC,VOUT = 4.3V, I OUT = 10mA
5.5V
5.5V
VIN
(1V/DIV)
VIN
(1V/DIV)
4.8V
2.5V
VOUT
20mV
0 (20mV/DIV)
VOUT
(20mV/DIV)
20mV
0
20mV
-20mV
20µS / div
20µS / div
Line Transient Response
Line Transient Response
O
O
TA = 125 C, V OUT = 4.3V, IOUT = 10mA
TA = 125 C, VOUT = 1V, I OUT = 10mA
5.5V
5.5V
VIN
(1V/DIV)
VIN
(1V/DIV)
4.8V
2.5V
20mV
20mV
VOUT
(20mV/DIV)
0
VOUT
(20mV/DIV)
0
-20mV
20µS / div
Rev. B.02
-20mV
20µS / div
15
AME
High PSRR, Low Noise, 600mA
CMOS Regulator
AME8855A
n Characterization Curve (Contd.)
Line Transient Response
Line Transient Response
TA = -40 OC, V OUT = 4.3V, IOUT = 600 mA
O
TA = -40 C, V OUT = 1V, IOUT = 600 mA
5.5V
5.5V
VIN
(1V/DIV)
V IN
(1V/DIV)
4.8V
2.5V
20mV
20mV
VOUT
(20mV/DIV)
0
VOUT
(20mV/DIV)
0
-20mV
-20mV
20µS / div
20µS / div
Line Transient Response
Line Transient Response
O
TA = 25OC, V OUT = 1V, IOUT = 600mA
TA = 25 C, V OUT = 4.3V, IOUT = 600 mA
5.5V
5.5V
4.8V
VIN
(1V/DIV)
4.8V
VIN
(1V/DIV)
20mV
20mV
VOUT
(20mV/DIV)
0
VOUT
(20mV/DIV)
0
-20mV
-20mV
20µS / div
20µS / div
Line Transient Response
Line Transient Response
O
O
TA = 125 C, VOUT = 4.3V, IOUT = 600mA
TA = 125 C, VOUT = 1V, IOUT = 600 mA
5.5V
5.5V
VIN
(1V/DIV)
VIN
(1V/DIV)
4.8V
2.5V
40mV
20mV
VOUT
(20mV/DIV)
0
20mV
VOUT
(20mV/DIV)
0
-20mV
-20mV
20µS / div
16
20µS / div
-40mV
Rev. B.02
AME
High PSRR, Low Noise, 600mA
CMOS Regulator
AME8855A
n Characterization Curve (Contd.)
Load Transient Response
O
TA = -40 C, V OUT = 1V, I
OUT
Load Transient Response
O
= 10~600 mA
TA = -40 C, V OUT = 1V, I
OUT
= 10~600 mA
20mV
V OUT
(20mV/DIV)
0
IOUT
(200mA/DIV)
20mV
V OUT
(20mV/DIV)
0
-20mV
-20mV
600m A
600m A
10mA
IOUT
(200mA/DIV)
10mA
Time (20µSec/DIV)
Time (20µSec/DIV)
Load Transient Response
Load Transient Response
O
O
TA =25 C, VOUT = 4.3V, IOUT = 10~600mA
TA =25 C, VOUT = 1V, I OUT = 10~600 mA
20mV
20mV
VOUT
(20mV/DIV)
0
IOUT
(200mA/DIV)
V OUT
(20mV/DIV)
0
-20mV
-20mV
600m A
600m A
10m A
IOUT
(200mA/DIV)
10m A
Time (20µSec/DIV)
Time (20µSec/DIV)
Load Transient Response
Load Transient Response
O
O
TA =125 C, VOUT = 1V, IOUT = 10~600mA
TA =125 C, V OUT = 4.3V, IOUT = 10~600mA
20mV
VOUT
(20mV/DIV)
0
20mV
V OUT
(20mV/DIV)
0
-20mV
-20mV
600m A
IOUT
(200mA/DIV)
10m A
Time (20µSec/DIV)
Rev. B.02
600m A
IOUT
(200mA/DIV)
10m A
Time (20µSec/DIV)
17
AME
High PSRR, Low Noise, 600mA
CMOS Regulator
AME8855A
n Characterization Curve (Contd.)
Chip Enable Transient Response
1
Chip Enable Transient Response
1
V OUT = 1V
I OUT = 0mA
2
2
VOUT = 4.3V
IOUT = 0mA
10µS / DIV
40µS / DIV
1) EN= 2V/div
2) VOUT= 500mV/div
1) EN= 2V/div
2) VOUT= 2V/div
Chip Enable Transient Response
1
Chip Enable Transient Response
1
VOUT = 4.3V
IOUT = 600mA
2
VOUT = 1V
IOUT = 600mA
2
40µS / DIV
10µS / DIV
1) EN= 1V/div
2) VOUT= 500mV/div
18
1) EN= 2V/div
2) VOUT= 2V/div
Rev. B.02
AME
High PSRR, Low Noise, 600mA
CMOS Regulator
AME8855A
n Characterization Curve (Contd.)
Shut down curve Output Voltage
1
Shut down curve Output Voltage
1
2
VOUT = 1V
IOUT = 0mA
2
V OUT = 1V
I OUT = 600mA
40µS / DIV
40µS / DIV
1) EN= 1V/div
2) VOUT= 500mV/div
1) EN= 1V/div
2) VOUT= 500mV/div
Shut down curve Output Voltage
1
Shut down curve Output Voltage
1
2
2
VOUT = 4.3V
IOUT = 600 mA
V OUT = 4.3V
I OUT = 0mA
40µS / DIV
1) EN= 2V/div
2) VOUT= 2V/div
Rev. B.02
20µS / DIV
1) EN= 2V/div
2) VOUT= 2V/div
19
AME
High PSRR, Low Noise, 600mA
CMOS Regulator
AME8855A
n Characterization Curve (Contd.)
PSRR vs Frequency
100
90
80
PSRR (dB)
70
60
50
40
30
20
VOUT = 1V
IOUT = 10mA
10
0
100
1K
10K
100K
1M
Frequency (Hz)
20
Rev. B.02
AME
High PSRR, Low Noise, 600mA
CMOS Regulator
AME8855A
n Tape and Reel Dimension
SOT-223
Carrier Tape, Number of Components Per Reel and Reel Size
Package
Carrier Width (W)
Pitch (P)
Part Per Full Reel
Reel Size
SOT-223
12.0±0.1 mm
4.0±0.1 mm
2500pcs
330±1 mm
SOP-8
Carrier Tape, Number of Components Per Reel and Reel Size
Rev. B.02
Package
Carrier Width (W)
Pitch (P)
Part Per Full Reel
Reel Size
SOP-8
12.0±0.1 mm
4.0±0.1 mm
2500pcs
330±1 mm
21
AME
High PSRR, Low Noise, 600mA
CMOS Regulator
AME8855A
n Tape and Reel Dimension (Contd.)
SOT-89
Carrier Tape, Number of Components Per Reel and Reel Size
22
Package
Carrier Width (W)
Pitch (P)
Part Per Full Reel
Reel Size
SOT-89
12.0±0.1 mm
4.0±0.1 mm
1000pcs
180±1 mm
Rev. B.02
AME
High PSRR, Low Noise, 600mA
CMOS Regulator
AME8855A
n Tape and Reel Dimension (Contd.)
SOT-23
P
W
AME
AME
PIN 1
Carrier Tape, Number of Components Per Reel and Reel Size
Package
Carrier Width (W)
Pitch (P)
Part Per Full Reel
Reel Size
SOT-23
8.0±0.1 mm
4.0±0.1 mm
3000pcs
180±1 mm
SOT-25
P
W
AME
AME
PIN 1
Carrier Tape, Number of Components Per Reel and Reel Size
Rev. B.02
Package
Carrier Width (W)
Pitch (P)
Part Per Full Reel
Reel Size
SOT-25
8.0±0.1 mm
4.0±0.1 mm
3000pcs
180±1 mm
23
AME
High PSRR, Low Noise, 600mA
CMOS Regulator
AME8855A
n Package Dimension
SOT-223
Top View
Side View
D
B1
θ
C
13 o(4X)
H
E
PIN 1
K
e
Front View
o
13 (4X)
F
A1
B
SYMBOLS
MILLIMETERS
MIN
MAX
MIN
MAX
A1
0.01
0.10
0.0004
0.0039
B
0.60
0.84
0.0236
0.0330
B1
2.90
3.15
0.1140
0.1240
C
0.23
0.38
0.0091
0.0150
D
6.20
6.71
0.2441
0.2640
E
3.30
3.71
0.1299
0.1460
2.30 BSC
e
F
1.40
0.0906 BSC
1.80
0.0551
0.0709
H
6.70
7.30
0.2638
0.2874
K
1.665
1.669
0.0656
0.0657
θ
24
INCHES
0
o
10
o
o
0
o
10
Rev. B.02
AME
High PSRR, Low Noise, 600mA
CMOS Regulator
AME8855A
n Package Dimension (Contd.)
SOP-8
Top View
Side View
C
E
H
L
PIN 1
θ
D
Front View
7 o (4X)
e
B
A1
A
A2
SYMBOLS
INCHES
MIN
MAX
MIN
MAX
A
1.35
1.75
0.0531
0.0689
A1
0.10
0.30
0.0039
0.0118
A2
1.473 REF
0.0580 REF
B
0.33
0.51
0.0130
0.0201
C
0.17
0.25
0.0067
0.0098
D
4.70
5.33
0.1850
0.2098
E
3.80
4.00
0.1496
0.1575
e
1.27 BSC
0.0500 BSC
L
0.40
1.27
0.0157
0.0500
H
5.80
6.30
0.2283
0.2480
y
-
0.10
-
0.0039
θ
Rev. B.02
MILLIMETERS
o
0
8
o
0
o
8
o
25
AME
High PSRR, Low Noise, 600mA
CMOS Regulator
AME8855A
n Package Dimension (Contd.)
SOT-89
TOP VIEW
SIDE VIEW
BOTTOM VIEW
D
D1
H
D2
E2
E
3'
10'
A1
PIN 1
C
S1
e
SYMBOLS
MILLIMETERS
INCHES
MAX
MIN
MAX
1.39
1.60
0.0547
0.0630
A
MIN
I
A
A1
FRONT VIEW
26
0.8 REF
0.0315 REF
C
0.35
0.44
0.0138
0.0173
D
4.39
4.60
0.1728
0.1811
D1
1.35
1.83
0.0531
0.0720
E
2.28
2.60
0.0898
0.1024
I
0.32
0.56
0.0126
0.0220
e
3.00 REF
0.1181 REF
H
0.70 REF
0.0276 REF
S1
1.50 REF
0.0591 REF
E2
2.05
2.60
0.0807
0.1024
D2
1.50
1.85
0.0591
0.0728
Rev. B.02
AME
High PSRR, Low Noise, 600mA
CMOS Regulator
AME8855A
n Package Dimension (Contd.)
SOT-25
Top View
Side View
D
E
H
θ1
L
PIN 1
S1
e
A
Front View
A1
SYMBOLS
b
MILLIMETERS
MIN
MAX
MIN
MAX
A
0.90
1.30
0.0354
0.0512
A1
0.00
0.15
0.0000
0.0059
b
0.30
0.55
0.0118
0.0217
D
2.70
3.10
0.1063
0.1220
E
1.40
1.80
0.0551
0.0709
1.90 BSC
e
H
2.60
θ1
S1
0.0748 BSC
3.00
0.37 BSC
L
Rev. B.02
INCHES
0
o
10
0.95 BSC
0.1024
0.1181
0.0146 BSC
o
0
o
10
o
0.0374 BSC
27
AME
High PSRR, Low Noise, 600mA
CMOS Regulator
AME8855A
n Package Dimension (Contd.)
SOT-23
Top View
Side View
D
E
H
θ1
L
e
PIN 1
b
A1
A
Front View
SYMBOLS
MILLIMETERS
MIN
MAX
MIN
MAX
A
0.90
1.40
0.0354
0.0551
A1
0.00
0.15
0.0000
0.0059
b
0.30
0.50
0.0118
0.0197
D
2.70
3.10
0.1063
0.1220
E
1.40
1.80
0.0551
0.0709
1.90 BSC
e
H
2.40
θ1
0.0748 BSC
3.00
0.35BSC
L
28
INCHES
0
o
10
0.0945
0.1181
0.0138 BSC
o
0o
10o
Rev. B.02
AME
High PSRR, Low Noise, 600mA
CMOS Regulator
AME8855A
n Lead Pattern
SOT-223
6.00 BSC
2.20 BSC
4.00 BSC
2.20 BSC
1.20 BSC
2.30 BSC
2.30 BSC
Note:
1. Lead pattern unit description:
BSC: Basic. Represents theoretical exact dimension or dimension target.
2. Dimensions in Millimeters.
3. General tolerance +0.05mm unless otherwise specified.
Rev. B.02
29
AME
High PSRR, Low Noise, 600mA
CMOS Regulator
AME8855A
n Lead Pattern (Contd.)
SOP-8
7.400 BSC
3.000 BSC
1.270 BSC
3.810 BSC
0.600 BSC
2.200 BSC
5.200 BSC
Note:
1. Lead pattern unit description:
BSC: Basic. Represents theoretical exact dimension or dimension target.
2. Dimensions in Millimeters.
3. General tolerance +0.05mm unless otherwise specified.
30
Rev. B.02
AME
High PSRR, Low Noise, 600mA
CMOS Regulator
AME8855A
n Lead Pattern (Contd.)
SOT-89
2.600 BSC
4.400 BSC
3.200 BSC
1.400 BSC
2.800 BSC
1.900 BSC
45oC
1.800 BSC
1.600 BSC
3.000 BSC
Note:
1. Lead pattern unit description:
BSC: Basic. Represents theoretical exact dimension or dimension target.
2. Dimensions in Millimeters.
3. General tolerance +0.05mm unless otherwise specified.
Rev. B.02
31
AME
High PSRR, Low Noise, 600mA
CMOS Regulator
AME8855A
n Lead Pattern (Contd.)
SOT-25
2.40 BSC
1.00 BSC
0.70 BSC
0.95 BSC
0.95 BSC
1.90 BSC
Note:
1. Lead pattern unit description:
BSC: Basic. Represents theoretical exact dimension or dimension target.
2. Dimensions in Millimeters.
3. General tolerance +0.05mm unless otherwise specified.
32
Rev. B.02
AME
High PSRR, Low Noise, 600mA
CMOS Regulator
AME8855A
n Lead Pattern (Contd.)
SOT-23
2.4 0 BSC
1.00 BSC
0.80 BSC
1.90 BSC
Note:
1. Lead pattern unit description:
BSC: Basic. Represents theoretical exact dimension or dimension target.
2. Dimensions in Millimeters.
3. General tolerance +0.05mm unless otherwise specified.
Rev. B.02
33
www.ame.com.tw
E-Mail: [email protected]
Life Support Policy:
These products of AME, Inc. are not authorized for use as critical components in life-support
devices or systems, without the express written approval of the president
of AME, Inc.
AME, Inc. reserves the right to make changes in the circuitry and specifications of its devices and
advises its customers to obtain the latest version of relevant information.
 AME, Inc. , January 2013
Document: TM001-DS8855A-B.02
Corporate Headquarter
AME, Inc.
8F, 12, WenHu St., Nei Hu
Taipei, Taiwan. 114
Tel: 886 2 2627-8687
Fax: 886 2 2659-2989