AME AME8855 n General Description The AME8855 family of positive, CMOS linear regulators provide low dropout voltage(420mV@600mA), low quiescent current, and low noise CMOS LDO. These rugged devices have both Thermal Shutdown, and Current limit to prevent device failure under the "Worst" of operating conditions. High PSRR, Low Noise, 600mA CMOS Regulator n Typical Application IN IN EN AME8855 OUT OUT GND COUT 1µF CIN 1µF n Features l l l l l l l l l l l Low Dropout Voltage: 420mV@600mA Guaranteed Current: 600mA Quiescent Current: 60µA (typ.) Over-Temperature Shutdown Current Limiting protection PSRR:60dB@10KHz Ultra-Low-Noise: 100µVRMS at 1Hz to 100KHz Low Temperature Coefficient Input Voltage Range 2.8V~5.5V Output Voltage Range: 0.8V ~ 4.3V Green Products Meet RoHS Standards n Functional Block Diagram IN OUT Overcurrent Shutdown Thermal Shutdown EN n Applications l l l l l l Rev. C.03 Instrumentation Portable Electronics Wireless Devices Cordless Phones PC Peripherals Battery Powered Widgets R1 AMP + R2 Vref GND 1 AME High PSRR, Low Noise, 600mA CMOS Regulator AME8855 n Pin Configuration 3 Pin SOT-223 Top View AME8855-AGTxxx 1. IN 2. GND (TAB) 3. OUT AME8855 1 2 SOT-223 Top View 3 * Die Attach: Conductive Epoxy SOT-89 Top View 2 AME8855 1 2 3 * Die Attach: Non-Conductive Epoxy SOT-89 Top View AME8855-AFTxxx 1. IN 2. GND (TAB) 3. OUT AME8855 1 AME8855-BGTxxx 1. GND 2. OUT (TAB) 3. IN 3 * Die Attach: Conductive Epoxy AME8855-BFTxxx 1. GND 2. OUT (TAB) 3. IN AME8855 1 2 3 * Die Attach: Non-Conductive Epoxy SOT-89 Top View AME8855-CFTxxx 1. GND 2. IN (TAB) 3. OUT AME8855 1 2 2 3 * Die Attach: Non-Conductive Epoxy Rev. C.03 AME High PSRR, Low Noise, 600mA CMOS Regulator AME8855 n Pin Configuration (Contd.) 3 Pin SOT-23 Top View SOT-23 Top View AME8855 AME8855-AETxxx 1. IN 2. GND 3. OUT 1 * Die Attach: Non-Conductive Epoxy 3 2 5 Pin AME8855 AME8855-BETxxx 1. GND 2. OUT 3. IN 1 * Die Attach: Non-Conductive Epoxy 3 2 8 Pin SOP-8 Top View SOT-25 Top View 5 4 AME8855 1 2 3 AME8855-AEVxxx 1. IN 2. GND 3. EN 4. NC 5. OUT * Die Attach: Conductive Epoxy 8 7 6 5 AME 8855 1 2 3 4 AME8855-AHAxxx 1. IN 2. GND 3. GND 4. OUT 5. 6. 7. 8. NC GND GND EN * Die Attach: Conductive Epoxy Rev. C.03 3 AME High PSRR, Low Noise, 600mA CMOS Regulator AME8855 n Pin Description SOT-223 Pin Number Pin Name Pin Description A B 1 3 IN 2 1 GND Ground connection pin. 3 2 OUT LDO voltage regulator output pin; should be decoupled with a 1.0 F or greater value low ESR ceramic capacitor. Input voltage pin; should be decoupled with 1 F or greater capacitor. SOT-89 Pin Number Pin Name Pin Description A B C 1 3 2 IN 2 1 1 GND Ground connection pin. 3 2 3 OUT LDO voltage regulator output pin; should be decoupled with a 1.0 F or greater value low ESR ceramic capacitor. Input voltage pin; should be decoupled with 1 F or greater capacitor. SOT-23 Pin Number 4 Pin Name Pin Description A B 1 3 IN 2 1 GND Ground connection pin. 3 2 OUT LDO voltage regulator output pin; should be decoupled with a 1.0 F or greater value low ESR ceramic capacitor. Input voltage pin; should be decoupled with 1 F or greater capacitor. Rev. C.03 AME High PSRR, Low Noise, 600mA CMOS Regulator AME8855 n Pin Configuration SOP-25 Pin Number Pin Name 1 IN 2 GND Pin Description Input voltage pin; should be decoupled with 1 F or greater capacitor. Ground connection pin. 3 EN Enable pin, Active “high". When pulled “low”, the PMOS pass transistor turns off, current consuming less than 1 A. When EN pin floating outside, it’s weakly pulled high from internal MOS . 4 NC No connection. 5 OUT Pin Number Pin Name 1 IN 2 GND Ground connection pin. 3 GND Ground connection pin. 4 OUT LDO voltage regulator output pin; should be decoupled with a 1.0 F or greater value low ESR ceramic capacitor. 5 NC No connection. 6 GND Ground connection pin. 7 GND Ground connection pin. 8 EN LDO voltage regulator output pin; should be decoupled with a 1.0 F or greater value low ESR ceramic capacitor. SOP-8 Rev. C.03 Pin Description Input voltage pin; should be decoupled with 1 F or greater capacitor. Enable pin, Active “high". When pulled “low”, the PMOS pass transistor turns off, current consuming less than 1 A. When EN pin floating outside, it’s weakly pulled high from internal MOS . 5 AME High PSRR, Low Noise, 600mA CMOS Regulator AME8855 n Ordering Information AME8855 - x x x xxx Output Voltage Number of Pins Package Type Pin Configuration Pin Configuration A (SOT-223) (SOT-23) 1. IN 2. GND 3. OUT (SOT-89) B (SOT-223) (SOT-23) 1. GND 2. OUT 3. IN (SOT-89) C (SOT-89) A (SOT-25) A (SOP-8) 6 1. GND 2. IN 3. OUT Package Type E: F: G: H: SOT-2X SOT-89 SOT-223 SOP Number of Pins A: 8 T: 3 V: 5 Output Voltage 080: 090: 100: 110: 0.8V 0.9V 1.0V 1.1V 120: 130: 140: 150: : : 420: 430: 1.2V 1.3V 1.4V 1.5V : : 4.2V 4.3V 1. IN 2. GND 3. EN 4. BYP 5. OUT 1. IN 2. GND 3. GND 4. OUT 5. NC 6. GND 7. GND 8. EN Rev. C.03 AME High PSRR, Low Noise, 600mA CMOS Regulator AME8855 n Absolute Maximum Ratings Parameter Maximum Unit Input Voltage -0.3 to 6 V EN Voltage -0.3 to 6 V Output Current PD/(VIN-VOUT) mA Output Voltage GND-0.3 to VIN+0.3 V HBM 2 kV MM 200 V ESD Classification Caution: Stress above the listed in absolute maximum ratings may cause permanent damage to the device. n Recommended Operating Conditions Parameter Symbol Rating Ambient Temperature Range TA - 40 to +85 o C Junction Temperaturen Range TJ - 40 to +125 o C Storage Temperaturen Range TSTG - 65 to +150 o C Rev. C.03 Unit 7 AME High PSRR, Low Noise, 600mA CMOS Regulator AME8855 n Thermal Information Parameter Package SOT-89 Thermal Resistance* (Junction to Case) SOT-223 Maximum Conductive Epoxy 40 Non-Conductive Epoxy 46 Conductive Epoxy 25 Non-Conductive Epoxy θ JC 31 Non-Conductive Epoxy 140 SOT-25 Conductive Epoxy 81 SOP-8 Conductive Epoxy 60 Conductive Epoxy 180 Non-Conductive Epoxy 180 Conductive Epoxy 120 SOT-223 Non-Conductive Epoxy θJA 135 SOT-23 Non-Conductive Epoxy 280 SOT-25 Conductive Epoxy 260 SOP-8 Conductive Epoxy 150 Conductive Epoxy 550 Non-Conductive Epoxy 550 Conductive Epoxy 900 SOT-89 Internal Power Dissipation Symbol SOT-23 SOT-89 Thermal Resistance (Junction to Ambient) Die Attach SOT-223 Non-Conductive Epoxy PD 800 SOT-23 Non-Conductive Epoxy 400 SOT-25 Conductive Epoxy 400 SOP-8 Conductive Epoxy 810 Unit o C/W o C/W mW Maximum Junction Temperature 150 o C Lead Temperature (Soldering, 10Sec.)** 260 o C * Measure θJC on backside center of molding compound if IC has no tab. ** MIL-STD-202G 210F 8 Rev. C.03 AME High PSRR, Low Noise, 600mA CMOS Regulator AME8855 n Electrical Specifications VIN=VOUT(NOM) +1V, (for VOUT<2V, VIN=2.8V), IOUT=1mA, and COUT=1µF, CIN=1µF unless otherwise noted. Typical values are at TA=25oC. Parameter Input Voltage Output Accuracy Output Voltage Range Dropout Voltage (Note 1) Output Current Quiescent Current Symbol VIN VOUT,ACC VDROP Rev. C.03 Min Max Units 2.8 5.5 V -2.0 2.0 % 0.8 4.3 V Note2 IOUT=600mA, 2.0V<VOUT(NOM)2.8V 850 IOUT IQ REGLINE REGLOAD Typ IOUT=600mA, 0.8VVOUT(NOM)2.0V IOUT=600mA, 2.8V<VOUT(NOM) Load Regulation ∆VOUT × 100% VOUT ∆I OUT IOUT=1mA VOUT Line Regulation ∆VOUT × 100% ∆V IN VOUT Test Condition 420 mV 650 600 mA IOUT=0mA 60 90 IOUT=1mA, 0.8VVOUT1.2V, 2.8VVIN3.5V 0.125 0.25 IOUT=1mA, 1.2V<VOUT2.0V, 2.8VVIN3.5V 0.1 0.2 IOUT=1mA, 2.0V<VOUT4.2V, VIN(MIN)VINVIN(MIN)+1V 0.05 0.1 IOUT=1mA, 4.2V<VOUT4.5V, VIN(MIN)VIN5.5V (Note2) 0.05 0.1 1mAIOUT600mA 0.8VVOUT(NOM)1.2V 1.5 3 1mAIOUT600mA 1.2VVOUT(NOM)2.0V 1.25 2.5 1mAIOUT600mA 2.0V<VOUT(NOM) 1.0 2.0 µA %/V %/A 9 AME High PSRR, Low Noise, 600mA CMOS Regulator AME8855 n Electrical Specifications (Contd.) Parameter Power Supply Rejection Ration Symbol PSRR Test Condition COUT=1uF, VOUT=0.8V IOUT=10mA VIN=2.8V Min Typ F=100Hz 60 F=1KHz 60 F=10KHz 60 Max dB Output Voltage Noise eN IOUT=10mA, VOUT=0.8V, f=1Hz to 100KHz Enable High (Enabled) VEN,HI VIN(MIN)VIN5.5V 1.4 VIN Enable Low (Shutdown) VEN,LO VIN(MIN)VIN5.5V 0 0.4 IEN,HI VEN=VIN 1 IEN,LO VEN=0V 2 ISHDN VIN=5.0V, VEN=0V VOUT,SD IOUT=0.4mA, VEN=0V Output Current Limit ILIM VOUT=0.9 x VOUT(NOM) Short-Circuit Current ISC VOUT0.6V 300 Thermal Shutdown Temperature TSHDN Shutdown, temperature increasing 150 Thermal Shutdown Hysteresis TSHDN(HYS) Enable Input Bias Current Shutdown Current Shutdown Output Voltage µVRMS 100 0.1 Units V µA 1 µA 0.4 V Protection 750 mA o C 20 Note1: Dropout Voltage is measured at VOUT=VOUT(NOM)x98% Note2:For VOUT below 2.0V, Dropout Voltage is the Input(MIN) Voltage to Output Voltage differential. 10 Rev. C.03 AME AME8855 n Detailed Description The AME8855 family of CMOS regulators contain a PMOS pass transistor, voltage reference, error amplifier, over-current protection thermal shutdown, and Power Good detection circuitry. The P-channel pass transistor receives data from the error amplifier, over-current shutdown, and thermal protection circuits. During normal operation, the error amplifier compares the output voltage to a precision reference. Over-current and Thermal shutdown circuits become active when the junction temperature exceeds 150oC, or the current exceeds 600mA. During thermal shutdown, the output voltage remains low. Normal operation is restored when the junction temperature drops more 20oC. High PSRR, Low Noise, 600mA CMOS Regulator Capacitor Selection and Regulator Stability The maximum output power of the AME8855 is limited by the maximum power dissipation of the package. By calculation the power dissipation of the package as a function of the input voltage, output voltage and output current, the maximum input voltage can be obtained. The maximum power dissipation should not exceed the package’ s maximum power rating. PMAX = (VIN(MAX)-VOUT) x IOUT Where: VIN(MAX) = maximum input voltage PMAX = maximum power dissipation of the package Capacitor Selection and Regulator Stability The AME8855 is stable with an output capacitor to ground of 1µF or greater. Ceramic capacitors have the lowest ESR, and will offer the best AC performance. Conversely, Aluminum Electrolytic capacitors exhibit the highest ESR, resulting in the poorest AC response. Unfortunately, large value ceramic capacitors are comparatively expensive. One option is to parallel a 0.1µF ceramic capacitor with a 10µF Aluminum Electrolytic. The benefit is low ESR, high capacitance, and low overall cost. A second capacitor is recommended between the input and ground to stabilize VIN. The input capacitor should be at least 0.1µF to have a beneficial effect. Enable Pin The Enable Pin is Active High. When activated pulled low, the MOS pass transistor shuts off, and all internal circuits are powered down. In this state, the stand by current is than 1µA. When EN pin float outside, It's pulled high. Rev. C.03 11 AME High PSRR, Low Noise, 600mA CMOS Regulator AME8855 n Characterization Curve Output Voltage Output Voltage 1.05 1.05 1.04 V IN = 2.8V, VOUT = 1V, IOUT = 1mA 1.03 Output Voltage (V) Output Voltage (V) 1.03 1.02 1.01 1.00 0.99 0.98 1.02 1.01 1.00 0.99 0.98 0.97 0.97 0.96 0.96 0.95 -40 VIN = 2.8V, VOUT = 1V, I OUT = 600mA 1.04 -25 -10 5 20 35 50 65 80 95 110 0.95 -40 125 -25 -10 50 Output Voltage Output Voltage (V) Output Voltage (V) 80 95 110 125 95 110 125 95 110 125 4.40 4.35 4.30 4.25 4.35 4.30 4.25 4.20 4.20 -25 -10 5 20 35 50 65 80 95 110 4.15 -40 125 -25 -10 5 20 35 50 65 80 Temperature ( C) Temperature (oC) Quiescent Current Quiescent Current o 100 100 VOUT = 1V 90 Quiescent Current (µA) 90 Quiescent Current (µA) 65 VIN = 5.5V, V OUT = 4.3V, IOUT = 600mA VIN = 5.5V, VOUT = 4. 3V, IOUT = 1mA 80 70 60 50 40 30 20 10 VOUT = 4.3V 80 70 60 50 40 30 20 10 -20 -10 5 20 35 50 65 Temperature (oC) 12 50 Output Voltage 4.40 0 -40 35 4.45 4.45 4.15 -40 20 Temperature (oC) Temperature (oC) 80 95 110 125 0 -40 -25 -10 5 20 35 50 65 80 Temperature (oC) Rev. C.03 AME High PSRR, Low Noise, 600mA CMOS Regulator AME8855 n Characterization Curve (Contd.) Current Limit vs Input Voltage Current Limit vs Input Voltage 1600 1600 VOUT =4.3V V OUT = 1V 1400 Current Limit (mA) Current Limit (mA) 1400 1200 1000 1200 1000 800 800 600 2.8 3. 8 4.8 600 5.5 5.3 5.4 5.5 Input Voltage (V) Input Voltage (V) Dropout Voltage Stability vs. ESR vs. Load Current 700 10.00 VOUT = 4.3V Stability of Stable ESR (Ω) Dropout Voltage (mV) 600 500 400 300 200 -40 Stable Range 0. 01 -25 -10 5 20 35 50 65 80 95 110 125 100 150 200 250 Load Current Short Circuit Current Protection Short Circuit Current Protection VOU T = 1V 700 600 500 400 300 2.8 50 Unstable Range Temperature (oC) 800 200 VIN = 5V C IN = COUT= 1µF / X7R 0.00 0 Short Circuit Current Protection (mA) Short Circuit Current Protection (mA) 0.10 0.005 100 3.8 Input Voltage (V) Rev. C.03 Unstable Range 1.00 4. 8 5.5 300 800 VOUT = 1V 700 600 500 400 300 200 5.5 5.3 Input Voltage (V) 13 AME High PSRR, Low Noise, 600mA CMOS Regulator AME8855 n Characterization Curve (Contd.) Line Transient Response TA = -40 OC , VOU T = 1V , IOUT = 10mA VIN (1V/DIV) Line Transient Response TA = -40 OC , VOUT = 4.3V , IOUT = 10mA 5.5V 5.5V V IN (1V/DIV) 4.8V 2.5V 20m V VOUT (20mV/DIV) 0 20mV V OUT (20mV/DIV) 0 -20mV -20mV 20µS / DIV 20µS / DIV Line Transient Response Line Transient Response O TA = -40 OC , VOUT = 4.3V , I OUT = 600mA TA = 25 C , VOUT = 4.3V , I OUT = 10mA 5.5V VIN (1V/DIV) 4.8V V IN (1V/DIV) 5.5V 4.8V 20m V VOUT (20mV/DIV) 0 -20mV 20mV 0 V OUT (20mV/DIV) -20mV 20µS / DIV 20µS / DIV Line Transient Response Line Transient Response TA = 125 OC , V OUT =1V , IOUT = 10mA TA = 125 OC , V OUT =4.3V , IOUT = 10mA 5.5V VIN (1V/DIV) 5.5V V IN (1V/DIV) 4.8V 2.5V 20mV VOUT (20mV/DIV) 0 20m V V OUT (20mV/DIV) 0 -20m V 20µS / DIV 14 -20mV 20µS / DIV Rev. C.03 AME High PSRR, Low Noise, 600mA CMOS Regulator AME8855 n Characterization Curve (Contd.) Line Transient Response Line Transient Response TA = -40 OC , VOUT = 1V , IOUT = 600 mA TA = -40 OC , VOUT = 4.3V , I OUT = 600mA 5.5V V IN (1V/DIV) 5.5V V IN (1V/DIV) 4.8V 2.5V 20mV V OUT (20mV/DIV) 0 20m V VOUT (20mV/DIV) 0 -20mV -20mV 20µS / DIV 20µS / DIV Line Transient Response Line Transient Response O TA = 25 OC , V OUT = 1V , IOUT = 600 mA TA = 25 C , V OUT =4.3V , IOUT = 600mA 5.5V 4.8V 5.5V V IN (1V/DIV) 4.8V VIN (1V/DIV) 20mV 20mV VOUT (20mV/DIV) 0 VOUT (20mV/DIV) 0 -20mV -20mV 20µS / DIV 20µS / DIV Line Transient Response Line Transient Response O TA = 125 C , VOU T =1V , I OUT = 600mA O 5.5V VIN (1V/DIV) T A = 125 C , V OUT =4.3V , IOUT = 600mA 5.5V V IN (1V/DIV) 4.8V 2.5V 40mV 20mV VOUT (20mV/DIV) 0 20m V VOUT (20mV/DIV) 0 -20m V -20mV 20µS / DIV Rev. C.03 20µS / DIV -40mV 15 AME High PSRR, Low Noise, 600mA CMOS Regulator AME8855 n Characterization Curve (Contd.) Load Transient Response Load Transient Response O TA = -40 C , VOUT =1V , IOUT = 10~600mA TA = -40 OC , V OUT =4.3V , IOUT = 10~600 mA 20mV VOUT (20mV/DIV) 0 -20mV 20mV V OUT (20mV/DIV) 0 -20mV 600mA IOUT (200mA/DIV) 10mA 600mA IOUT (200mA/DIV) 10mA Time (20µSec/DIV) Time (20µSec/DIV) Load Transient Response Load Transient Response TA = 25 OC , VOUT =1V , I OUT = 10~600 mA VOUT (20mV/DIV) O TA = 25 C , VOUT =4.3V , IOUT = 10~600mA 20mV 0 VOUT (20mV/DIV) 0 -20mV -20mV 600mA 600mA IOUT (200mA/DIV) 10mA IOUT (200mA/DIV) 10mA Time (20µSec/DIV) Time (20µSec/DIV) Load Transient Response Load Transient Response TA = 125 OC , VOUT =4.3V , IOUT = 10~600mA TA = 125 OC , VOUT =1V , I OUT = 10~600 mA 20mV VOUT (20mV/DIV) 0 IOUT (200mA/DIV) 16 20mV VOUT (20mV/DIV) 0 -20mV -20mV 600mA 600mA 10mA Time (20µSec/DIV) 20mV IOUT (200mA/DIV) 10mA Time (20µSec/DIV) Rev. C.03 AME High PSRR, Low Noise, 600mA CMOS Regulator AME8855 n Characterization Curve (Contd.) Chip Enable Transient Response 1 Chip Enable Transient Response 1 V OUT = 1V IOUT = 0mA 2 40µS/DIV 10µS/DIV 1) EN= 2V/Div 2) VOUT= 2V/Div 1) EN= 2V/Div 2) VOUT= 500mV/Div Chip Enable Transient Response 1 Chip Enable Transient Response 1 V OUT = 1V I OUT = 600mA 2 10µS/DIV 1) EN= 1V/Div 2) VOUT= 500mV/Div Rev. C.03 VOUT = 4.3V IOUT = 0mA 2 V OUT = 4.3V I OU T = 600mA 2 40µS/DIV 1) EN= 2V/Div 2) VOUT= 2V/Div 17 AME High PSRR, Low Noise, 600mA CMOS Regulator AME8855 n Characterization Curve (Contd.) Shut Down Curve Output Voltage 1 Shut Down Curve Output Voltage 1 2 2 VOUT = 1V I OUT = 0mA 40µS/DIV 1) EN= 1V/Div 2) VOUT= 500mV/Div V OUT = 1V IOUT = 600mA 4µS/DIV 1) EN= 1V/Div 2) VOUT= 500mV/Div Shut Down Curve Output Voltage Shut Down Curve Output Voltage 1 1 2 2 VOUT = 4.3V IOUT = 0mA 40µS/DIV VOUT = 4.3V IOUT = 600 mA 20µS/DIV 1) EN= 2V/Div 2) VOUT= 2V/Div 1) EN= 2V/Div 2) VOUT= 2V/Div PSRR vs Frequency 100 90 80 PSRR (dB) 70 60 50 40 30 20 10 0 100 18 VOUT = 4.3V IOUT = 10mA 1K 10K Frequency (Hz) 100K 1M Rev. C.03 AME High PSRR, Low Noise, 600mA CMOS Regulator AME8855 n Tape and Reel Dimension SOT-223 P0 W AME AME PIN 1 P Carrier Tape, Number of Components Per Reel and Reel Size Package Carrier Width (W) Pitch (P) Pitch (P0) Part Per Full Reel Reel Size SOT-223 12.0±0.1 mm 8.0±0.1 mm 4.0±0.1 mm 2500pcs 330±1 mm SOP-8 P0 PIN 1 W AME AME P Carrier Tape, Number of Components Per Reel and Reel Size Package Carrier Width (W) Pitch (P) Pitch (P0) Part Per Full Reel Reel Size SOP-8 12.0±0.1 mm 8.0±0.1 mm 4.0±0.1 mm 2500pcs 330±1 mm Rev. C.03 19 AME High PSRR, Low Noise, 600mA CMOS Regulator AME8855 n Tape and Reel Dimension (Contd.) SOT-89 P0 W AME AME PIN1 P Carrier Tape, Number of Components Per Reel and Reel Size 20 Package Carrier Width (W) Pitch (P) Pitch (P0) Part Per Full Reel Reel Size SOT-89 12.0±0.1 mm 8.0±0.1 mm 4.0±0.1 mm 1000pcs 180±1 mm Rev. C.03 AME High PSRR, Low Noise, 600mA CMOS Regulator AME8855 n Tape and Reel Dimension (Contd.) SOT-23 P0 W AME AME PIN 1 P Carrier Tape, Number of Components Per Reel and Reel Size Package Carrier Width (W) Pitch (P) Pitch (P0) Part Per Full Reel Reel Size SOT-23 8.0±0.1 mm 4.0±0.1 mm 4.0±0.1 mm 3000pcs 180±1 mm SOT-25 P0 W AME AME PIN 1 P Carrier Tape, Number of Components Per Reel and Reel Size Package Carrier Width (W) Pitch (P) Pitch (P0) Part Per Full Reel Reel Size SOT-25 8.0±0.1 mm 4.0±0.1 mm 4.0±0.1 mm 3000pcs 180±1 mm Rev. C.03 21 AME High PSRR, Low Noise, 600mA CMOS Regulator AME8855 n Package Dimension SOT-223 Top View Side View D B1 C 13 o(4X) H E PIN 1 K e Front View 13 o(4X) F A1 B n Lead Pattern n Lead Pattern 6.00 BSC 2.20 BSC 4.00 BSC 1.20 BSC Note: 1. Lead pattern unit description: BSC: Basic. Represents theoretical exact dimension 2.20 BSC or dimension target. 2. Dimensions in Millimeters. 3. General tolerance +0.05mm unless otherwise specified. 2.30 BSC 22 2.30 BSC Rev. C.03 AME High PSRR, Low Noise, 600mA CMOS Regulator AME8855 n Package Dimension (Contd.) SOP-8 Top View Side View C E H L PIN 1 D Front View o e A A1 A2 7 (4X) B Rev. C.03 23 AME High PSRR, Low Noise, 600mA CMOS Regulator AME8855 n Package Dimension (Contd.) SOT-89 TOP VIEW SIDE VIEW D H D1 SYMBOLS E A 3' 10' C S1 e INCHES MIN MAX MIN MAX 1.39 1.60 0.0547 0.0630 A1 A1 PIN 1 MILLIMETERS 0.8 REF 0.0315 REF C 0.35 0.44 0.0138 0.0173 D 4.39 4.60 0.1728 0.1811 D1 1.35 1.85 0.0531 0.0728 E 2.28 2.60 0.0898 0.1024 I 0.32 0.56 0.0126 0.0220 e 3.00 REF 0.1181 REF A H 0.70 REF 0.0276 REF S1 1.50 REF 0.0591 REF I FRONT VIEW n Lead Pattern 2.600 BSC 4.400 BSC 3.200 BSC 1.400 BSC 1.900 BSC 45oC Note: 2.800 BSC 1. Lead pattern unit description: BSC: Basic. Represents theoretical exact dimension or dimension target. 2. Dimensions in Millimeters. 1.800 BSC 1.600 BSC 3. General tolerance +0.05mm unless otherwise specified. 3.000 BSC 24 Rev. C.03 AME High PSRR, Low Noise, 600mA CMOS Regulator AME8855 n Package Dimension (Contd.) SOT-25 Top View Side View D E H L PIN 1 S1 e A1 A Front View b n Lead Pattern 2.40 BSC 1.00 BSC 0.70 BSC Note: 1. Lead pattern unit description: BSC: Basic. Represents theoretical exact dimension or dimension target. 0.95 BSC 0.95 BSC 2. Dimensions in Millimeters. 3. General tolerance +0.05mm unless otherwise specified. 1.90 BSC Rev. C.03 25 AME High PSRR, Low Noise, 600mA CMOS Regulator AME8855 n Package Dimension (Contd.) SOT-23 Top View Side View D E H L e PIN 1 A Front View A1 b n Lead Pattern 2.40 BSC 1.00 BSC 0.80 BSC Note: 1. Lead pattern unit description: BSC: Basic. Represents theoretical exact dimension or dimension target. 2. Dimensions in Millimeters. 1.90 BSC 26 3. General tolerance +0.05mm unless otherwise specified. Rev. C.03 www.ame.com.tw E-Mail: [email protected] Life Support Policy: These products of AME, Inc. are not authorized for use as critical components in life-support devices or systems, without the express written approval of the president of AME, Inc. AME, Inc. reserves the right to make changes in the circuitry and specifications of its devices and advises its customers to obtain the latest version of relevant information. AME, Inc. , August 2014 Document: TM001-DS8855-C.03 Corporate Headquarter AME, Inc. 8F, 12, WenHu St., Nei Hu Taipei, Taiwan. 114 Tel: 886 2 2627-8687 Fax: 886 2 2659-2989